JP5759413B2 - 発光ダイオードパッケージ - Google Patents
発光ダイオードパッケージ Download PDFInfo
- Publication number
- JP5759413B2 JP5759413B2 JP2012095306A JP2012095306A JP5759413B2 JP 5759413 B2 JP5759413 B2 JP 5759413B2 JP 2012095306 A JP2012095306 A JP 2012095306A JP 2012095306 A JP2012095306 A JP 2012095306A JP 5759413 B2 JP5759413 B2 JP 5759413B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- diode package
- package according
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011347 resin Substances 0.000 claims description 21
- 229920005989 resin Polymers 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 230000017525 heat dissipation Effects 0.000 claims description 7
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012463 white pigment Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
- F24C7/00—Stoves or ranges heated by electric energy
- F24C7/06—Arrangement or mounting of electric heating elements
- F24C7/062—Arrangement or mounting of electric heating elements on stoves
- F24C7/065—Arrangement or mounting of electric heating elements on stoves with reflectors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
- F24C7/00—Stoves or ranges heated by electric energy
- F24C7/08—Arrangement or mounting of control or safety devices
- F24C7/081—Arrangement or mounting of control or safety devices on stoves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
Claims (14)
- 上面側に放熱のための複数の溝を有する板と、
前記板上の絶縁性の樹脂層と、
前記樹脂層上の第1の反射層と、
前記樹脂層の上の発光ダイオードと、
を備え、
前記板は金属板であり、
前記発光ダイオードは、前記発光ダイオードに最も近い2つの溝に挟まれた部分に配置されることを特徴とする発光ダイオードパッケージ。 - 前記板が、前記発光ダイオードがその上方に設置される第1の部分および前記複数の溝が形成された第2の部分を含む請求項1に記載の発光ダイオードパッケージ。
- 前記第1の反射層は前記板の第2の部分の上面に形成されている請求項2に記載の発光ダイオードパッケージ。
- 前記板の前記第1の部分が平らな上面を含み、
前記第1の部分の平らな表面は、前記第2の部分の上面と実質的に同じ高さに配置される請求項2または3に記載の発光ダイオードパッケージ。 - 前記絶縁性の樹脂層はエポキシ材質を含む請求項1〜4のいずれかに記載の発光ダイオードパッケージ。
- 前記板の上の回路パターンをさらに含む請求項1〜5のいずれかに記載の発光ダイオードパッケージ。
- 前記回路パターンの間に形成された第2の反射層をさらに含む請求項5または6に記載の発光ダイオードパッケージ。
- 前記溝が形成されていない領域に前記回路パターンが形成されている請求項5〜7のいずれかに記載の発光ダイオードパッケージ。
- 前記複数の溝が前記金属板の上面側および下面側の両方に形成され、前記上側面に形成された前記溝と下側面に形成された前記溝は、同一垂直線上に形成されていない請求項1〜8のいずれかに記載の発光ダイオードパッケージ。
- 前記板は、前記発光ダイオードが形成された上側方向に少なくとも一部が露出している請求項1〜9のいずれかに記載の発光ダイオードパッケージ。
- 前記第1の反射層は、酸化チタンと樹脂を主成分とし、炭酸カルシウム、硫酸バリウム、及び酸化亜鉛のうち、少なくとも1つを含むことを特徴とする請求項1〜10のいずれかに記載の発光ダイオードパッケージ。
- 前記発光ダイオードは、前記第1の反射層上に配置されることを特徴とする請求項1〜11のいずれかに記載の発光ダイオードパッケージ。
- 前記発光ダイオードと前記板との間に絶縁物質を含むことを特徴とする請求項1〜11のいずれかに記載の発光ダイオードパッケージ。
- 前記発光ダイオード上にモールディング部を含む請求項1〜13のいずれかに記載の発光ダイオードパッケージ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0020305 | 2006-03-03 | ||
KR1020060020305A KR101210090B1 (ko) | 2006-03-03 | 2006-03-03 | 금속 코어 인쇄회로기판 및 이를 이용한 발광 다이오드패키징 방법 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008557208A Division JP5323501B2 (ja) | 2006-03-03 | 2007-02-28 | 発光ダイオードパッケージ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012178581A JP2012178581A (ja) | 2012-09-13 |
JP5759413B2 true JP5759413B2 (ja) | 2015-08-05 |
Family
ID=38459278
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008557208A Active JP5323501B2 (ja) | 2006-03-03 | 2007-02-28 | 発光ダイオードパッケージ及びその製造方法 |
JP2012095306A Active JP5759413B2 (ja) | 2006-03-03 | 2012-04-19 | 発光ダイオードパッケージ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008557208A Active JP5323501B2 (ja) | 2006-03-03 | 2007-02-28 | 発光ダイオードパッケージ及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7745844B2 (ja) |
JP (2) | JP5323501B2 (ja) |
KR (1) | KR101210090B1 (ja) |
CN (1) | CN101213892B (ja) |
TW (1) | TWI429100B (ja) |
WO (1) | WO2007100209A1 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101210090B1 (ko) * | 2006-03-03 | 2012-12-07 | 엘지이노텍 주식회사 | 금속 코어 인쇄회로기판 및 이를 이용한 발광 다이오드패키징 방법 |
KR20110046440A (ko) * | 2008-08-21 | 2011-05-04 | 파나소닉 주식회사 | 조명용 광원 |
KR101134555B1 (ko) * | 2009-03-23 | 2012-04-16 | 금호전기주식회사 | 발광소자 장착용 인쇄회로기판 |
KR101124102B1 (ko) * | 2009-08-24 | 2012-03-21 | 삼성전기주식회사 | 발광 소자 패키지용 기판 및 이를 포함하는 발광 소자 패키지 |
KR20110068689A (ko) * | 2009-12-16 | 2011-06-22 | 삼성전기주식회사 | 광학소자용 패키지 기판 및 그 제조방법 |
US8616732B2 (en) | 2010-02-12 | 2013-12-31 | Toshiba Lighting & Technology Corporation | Light-emitting device and illumination device |
KR101121151B1 (ko) * | 2010-03-19 | 2012-03-20 | 주식회사 대원이노스트 | Led 모듈 및 그 제조 방법 |
KR101037168B1 (ko) * | 2010-06-04 | 2011-05-26 | 지성수 | 절연 및 방열성능이 향상된 방열피씨비 및 이의 제조방법 |
KR101101709B1 (ko) * | 2010-12-16 | 2012-01-05 | 한국세라믹기술원 | Led 어레이 방열모듈 및 이의 제조방법 |
KR101166066B1 (ko) | 2010-12-21 | 2012-07-19 | 주식회사 루셈 | 발광다이오드 패키지 |
KR101775428B1 (ko) * | 2010-12-28 | 2017-09-06 | 삼성전자 주식회사 | 발광 소자 패키지 및 그 제조 방법 |
CN102104092A (zh) * | 2011-01-13 | 2011-06-22 | 北京易光天元半导体照明科技有限公司 | 一种利于散热的新型led封装方法和装置 |
US9103532B2 (en) * | 2011-01-25 | 2015-08-11 | Koninklijke Philips N.V. | LED-based modular assembly |
TWI419270B (zh) * | 2011-03-24 | 2013-12-11 | Chipmos Technologies Inc | 封裝堆疊結構 |
TW201347244A (zh) * | 2012-05-10 | 2013-11-16 | Gem Weltronics Twn Corp | 一體化高效率多層式照明裝置 |
KR101236715B1 (ko) * | 2012-08-28 | 2013-02-25 | 주식회사 썬엘이디 | 실리콘 성형 방식을 이용한 칩온보드댐을 포함한 led 모듈의 제조방법 및 상기 제조방법에 의해 제조된 led 모듈 |
JP5784658B2 (ja) * | 2013-02-28 | 2015-09-24 | 株式会社東芝 | 半導体装置の製造方法及び製造装置 |
EP2806211A1 (en) * | 2013-05-21 | 2014-11-26 | OSRAM GmbH | Solid-state lighting device and related process |
KR101592649B1 (ko) * | 2013-12-24 | 2016-02-12 | 현대자동차주식회사 | 헤드램프용 레이저 광학계 |
CN104613379B (zh) * | 2015-02-06 | 2017-12-26 | 东莞佰鸿电子有限公司 | 一种蓝宝石印刷电路板led灯具及其制作方法 |
CN105655472A (zh) * | 2016-02-02 | 2016-06-08 | 上海鼎晖科技股份有限公司 | 一种金属导热柱cob led光源 |
CN106449443B (zh) * | 2016-11-29 | 2019-01-01 | 海安浩驰科技有限公司 | 一种具有鳍形结构的晶圆封装方法 |
CN106449563B (zh) * | 2016-11-29 | 2018-11-13 | 卡姆丹克太阳能(江苏)有限公司 | 一种具有鳍形结构的晶圆封装 |
DE102019126021A1 (de) * | 2019-09-26 | 2021-04-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
CN111048651B (zh) * | 2019-12-27 | 2021-12-17 | 广州市鸿利秉一光电科技有限公司 | 一种高反射率uvled基板及生产方法 |
US11894357B2 (en) * | 2020-09-10 | 2024-02-06 | Sj Semiconductor (Jiangyin) Corporation | System-level packaging structure and method for LED chip |
WO2023133720A1 (zh) * | 2022-01-12 | 2023-07-20 | 谢华棣 | 立体散热电路板组的制造方法 |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6028366U (ja) * | 1983-08-03 | 1985-02-26 | 昭和アルミニウム株式会社 | 凝縮器 |
JPH0416468Y2 (ja) * | 1986-07-31 | 1992-04-13 | ||
JPH0677540A (ja) * | 1992-08-24 | 1994-03-18 | Sanyo Electric Co Ltd | 光半導体装置 |
JPH08204294A (ja) * | 1995-01-27 | 1996-08-09 | Fuji Electric Co Ltd | 放熱フィン一体形プリント配線板 |
US5739554A (en) * | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
JPH10144963A (ja) * | 1996-11-05 | 1998-05-29 | Sanyo Electric Co Ltd | Led光源及びその製造方法 |
JPH11284110A (ja) * | 1998-03-30 | 1999-10-15 | Onkyo Corp | ヒートシンクにおけるパワートランジスタの取付構造 |
JP3605547B2 (ja) * | 1999-06-11 | 2004-12-22 | 松下電器産業株式会社 | 放熱基板及びその製造方法 |
JP3640153B2 (ja) * | 1999-11-18 | 2005-04-20 | 松下電工株式会社 | 照明光源 |
TW507482B (en) * | 2000-06-09 | 2002-10-21 | Sanyo Electric Co | Light emitting device, its manufacturing process, and lighting device using such a light-emitting device |
JP3602453B2 (ja) * | 2000-08-31 | 2004-12-15 | Necエレクトロニクス株式会社 | 半導体装置 |
JP3472252B2 (ja) * | 2000-09-07 | 2003-12-02 | 日本リークレス工業株式会社 | 膨張黒鉛製ヒートシンクの製造方法 |
US6906455B2 (en) * | 2001-02-26 | 2005-06-14 | Sony Corporation | Transfer foil, transfer method, transfer apparatus, flat cathode-ray tube, and its manufacturing method |
JP2003249675A (ja) * | 2002-02-26 | 2003-09-05 | Sumitomo Electric Ind Ltd | 受光素子アレイ |
JP2003304000A (ja) | 2002-04-08 | 2003-10-24 | Citizen Electronics Co Ltd | 発光ダイオード用パッケージの製造方法 |
JP3838164B2 (ja) * | 2002-06-18 | 2006-10-25 | 住友電気工業株式会社 | 光通信用素子と光通信用素子の製造方法 |
JP3655267B2 (ja) * | 2002-07-17 | 2005-06-02 | 株式会社東芝 | 半導体発光装置 |
TW578280B (en) * | 2002-11-21 | 2004-03-01 | United Epitaxy Co Ltd | Light emitting diode and package scheme and method thereof |
US7420271B2 (en) * | 2003-02-20 | 2008-09-02 | Tsung Hsin Chen | Heat conductivity and brightness enhancing structure for light-emitting diode |
JP2004319530A (ja) * | 2003-02-28 | 2004-11-11 | Sanyo Electric Co Ltd | 光半導体装置およびその製造方法 |
TW560813U (en) * | 2003-03-06 | 2003-11-01 | Shang-Hua You | Improved LED seat |
TW594950B (en) * | 2003-03-18 | 2004-06-21 | United Epitaxy Co Ltd | Light emitting diode and package scheme and method thereof |
US6864513B2 (en) * | 2003-05-07 | 2005-03-08 | Kaylu Industrial Corporation | Light emitting diode bulb having high heat dissipating efficiency |
EP2365539B1 (en) * | 2003-05-26 | 2018-05-02 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting device |
WO2004107461A1 (en) * | 2003-05-28 | 2004-12-09 | Seoul Semiconductor Co., Ltd. | Light emitting diode package and light emitting diode system having at least two heat sinks |
KR100524656B1 (ko) | 2003-09-30 | 2005-10-31 | 서울반도체 주식회사 | 다색 발광다이오드 패키지 및 다색 발광다이오드 시스템 |
KR100455089B1 (ko) | 2003-05-28 | 2004-11-06 | 서울반도체 주식회사 | 고출력 반도체 발광 소자용 패키지 구조 및 이를 사용하는 반도체 발광 소자 |
US6983086B2 (en) * | 2003-06-19 | 2006-01-03 | Intel Corporation | Thermally isolating optical devices |
JP4254470B2 (ja) * | 2003-10-10 | 2009-04-15 | 豊田合成株式会社 | 発光装置 |
JP2005056653A (ja) * | 2003-08-01 | 2005-03-03 | Fuji Photo Film Co Ltd | 光源装置 |
JP4400327B2 (ja) * | 2003-09-11 | 2010-01-20 | セイコーエプソン株式会社 | タイル状素子用配線形成方法 |
US20050077616A1 (en) * | 2003-10-09 | 2005-04-14 | Ng Kee Yean | High power light emitting diode device |
JP2005217147A (ja) * | 2004-01-29 | 2005-08-11 | Seiko Epson Corp | 受発光素子アレイ、光モジュール、および光伝達装置 |
US20050199899A1 (en) | 2004-03-11 | 2005-09-15 | Ming-Der Lin | Package array and package unit of flip chip LED |
CN1708212A (zh) * | 2004-06-11 | 2005-12-14 | 周明庆 | 导热基板装置 |
US7745832B2 (en) * | 2004-09-24 | 2010-06-29 | Epistar Corporation | Semiconductor light-emitting element assembly with a composite substrate |
US20060097385A1 (en) * | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
US20060124953A1 (en) * | 2004-12-14 | 2006-06-15 | Negley Gerald H | Semiconductor light emitting device mounting substrates and packages including cavities and cover plates, and methods of packaging same |
JP4618682B2 (ja) | 2005-01-28 | 2011-01-26 | 株式会社神戸製鋼所 | 耐水素脆化特性に優れた高強度ばね用鋼 |
US7411225B2 (en) * | 2005-03-21 | 2008-08-12 | Lg Electronics Inc. | Light source apparatus |
KR100592508B1 (ko) * | 2005-07-15 | 2006-06-26 | 한국광기술원 | 비콘 모양의 기판을 구비한 고출력 발광 다이오드 패키지 |
TWI280332B (en) * | 2005-10-31 | 2007-05-01 | Guei-Fang Chen | LED lighting device |
KR101210090B1 (ko) * | 2006-03-03 | 2012-12-07 | 엘지이노텍 주식회사 | 금속 코어 인쇄회로기판 및 이를 이용한 발광 다이오드패키징 방법 |
US20080175003A1 (en) * | 2007-01-22 | 2008-07-24 | Cheng Home Electronics Co., Ltd. | Led sunken lamp |
-
2006
- 2006-03-03 KR KR1020060020305A patent/KR101210090B1/ko active IP Right Grant
-
2007
- 2007-02-28 JP JP2008557208A patent/JP5323501B2/ja active Active
- 2007-02-28 US US11/910,174 patent/US7745844B2/en active Active
- 2007-02-28 WO PCT/KR2007/001020 patent/WO2007100209A1/en active Application Filing
- 2007-02-28 CN CN2007800000705A patent/CN101213892B/zh active Active
- 2007-03-02 TW TW096107087A patent/TWI429100B/zh active
-
2010
- 2010-05-26 US US12/788,090 patent/US8212274B2/en not_active Expired - Fee Related
-
2012
- 2012-04-19 JP JP2012095306A patent/JP5759413B2/ja active Active
- 2012-06-13 US US13/495,664 patent/US8796717B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW200735425A (en) | 2007-09-16 |
CN101213892B (zh) | 2012-09-05 |
US20120248488A1 (en) | 2012-10-04 |
US20100230707A1 (en) | 2010-09-16 |
US7745844B2 (en) | 2010-06-29 |
US8796717B2 (en) | 2014-08-05 |
WO2007100209A1 (en) | 2007-09-07 |
JP5323501B2 (ja) | 2013-10-23 |
KR20070090509A (ko) | 2007-09-06 |
CN101213892A (zh) | 2008-07-02 |
US8212274B2 (en) | 2012-07-03 |
JP2012178581A (ja) | 2012-09-13 |
US20080179612A1 (en) | 2008-07-31 |
JP2009528695A (ja) | 2009-08-06 |
KR101210090B1 (ko) | 2012-12-07 |
TWI429100B (zh) | 2014-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5759413B2 (ja) | 発光ダイオードパッケージ | |
US8610146B2 (en) | Light emitting diode package and method of manufacturing the same | |
KR101283182B1 (ko) | 발광 다이오드 패키지 및 그 제조 방법 | |
JP5746877B2 (ja) | 電力表面取り付けの発光ダイ・パッケージ | |
TWI550897B (zh) | 功率式表面安裝之發光晶粒封裝 | |
US10667345B2 (en) | Method for manufacturing light-emitting device packages, light-emitting device package strip, and light-emitting device package | |
EP2479810B1 (en) | Light-emitting device package and method of manufacturing the same | |
JP5940799B2 (ja) | 電子部品搭載用パッケージ及び電子部品パッケージ並びにそれらの製造方法 | |
JP2007294506A (ja) | 放熱基板とその製造方法及び、これを用いた発光モジュール及び表示装置 | |
TW201133729A (en) | Semiconductor chip assembly with post/base heat spreader and conductive trace | |
WO2004102685A1 (en) | Light emitting device, package structure thereof and manufacturing method thereof | |
JP4923700B2 (ja) | 放熱基板とその製造方法及び、これを用いた発光モジュール及び表示装置 | |
JP2011077090A (ja) | 発光素子用リードフレーム基板の製造方法及び発光素子用リードフレーム基板並びに発光モジュール | |
KR101273045B1 (ko) | 발광 다이오드 패키지 | |
JP2007266386A (ja) | 電子装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130710 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130723 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131022 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131025 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140304 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140703 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140710 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20140822 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150408 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150605 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5759413 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |