JP5758824B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 117
- 238000004519 manufacturing process Methods 0.000 title description 9
- 238000009792 diffusion process Methods 0.000 claims description 86
- 238000007667 floating Methods 0.000 claims description 69
- 230000002093 peripheral effect Effects 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 37
- 210000000746 body region Anatomy 0.000 claims description 35
- 239000012535 impurity Substances 0.000 claims description 31
- 238000009826 distribution Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 17
- 230000015556 catabolic process Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum ions Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- H—ELECTRICITY
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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Description
Claims (6)
- セルエリア{105}と、そのセルエリアを取囲んでいる終端エリア{107}を有するSiCの半導体基板を備えており、
終端エリアは、1又は複数の終端トレンチ{161−163}と、1又は複数の拡散領域とを備えており、
1又は複数の終端トレンチ{161−163}はセルエリアを取囲んでおり、
1又は複数の終端トレンチは、その最外周側に第1の終端トレンチ{163}を有しており、
第1の終端トレンチより内周側の領域の半導体基板では、第2導電型{n型}のドリフト領域{112}の表面に第1導電型{p型}のボディ領域{141}が積層されており、
1又は複数の終端トレンチは、半導体基板の表面からボディ領域を貫通してドリフト領域に達すると共に、その内部に絶縁層{171}が形成されており、
1又は複数の終端トレンチのそれぞれの底部には、ドリフト領域に囲まれるとともに第1導電型{p型}であるフローティング領域{151}が形成されており、
第1の終端トレンチより外周側の領域の半導体基板では、ボディ領域が形成されておらず、
1又は複数の拡散領域は、第1導電型{p型}であり、第1の終端トレンチより外周側の領域に形成されており、
1又は複数の拡散領域は、半導体装置を平面視したときに1又は複数の終端トレンチを取り囲んでいるとともに、半導体基板の表面から下方側へ伸びている形状を有しており、
1又は複数の拡散領域の下端部の位置は、フローティング領域の位置よりも上方であって、ボディ領域の下端部よりも下方であることを特徴とする半導体装置。 - 終端エリアは、複数の終端トレンチ{161−163}を有しており、
複数の終端トレンチは、第1の終端トレンチ{163}の内周側に隣接して配置されている第2の終端トレンチ{162}を有しており、
第1の終端トレンチの外周側に隣接して配置されている拡散領域と第1の終端トレンチとの間の第1距離{W1}は、第1の終端トレンチと第2の終端トレンチとの間の第2距離{W2}よりも小さいことを特徴とする請求項1に記載の半導体装置。 - 拡散領域の数は、終端トレンチの数よりも多いことを特徴とする請求項1または2に記載の半導体装置。
- 拡散領域の不純物濃度は、フローティング領域の不純物濃度よりも低いことを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
- 終端エリアが形成されている領域の表面が絶縁層で被覆されており、
1又は複数の拡散領域が形成されている部分の絶縁層の表面が導電層{190}で被覆されており、
導電層がソース電極と接続されていることを特徴とする請求項1または2に記載の半導体装置。 - 複数の終端トレンチは、第2の終端トレンチ{162}の内周側に隣接して配置されている第3の終端トレンチ{161}を有しており、
前記第2距離は、第2の終端トレンチと第3の終端トレンチとの間の第3距離{W3}よりも小さいことを特徴とする請求項2に記載の半導体装置。
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JP6231396B2 (ja) | 2014-02-10 | 2017-11-15 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
JP6193163B2 (ja) * | 2014-03-25 | 2017-09-06 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置 |
JP6231422B2 (ja) | 2014-04-09 | 2017-11-15 | トヨタ自動車株式会社 | 半導体装置 |
JP6513932B2 (ja) * | 2014-11-17 | 2019-05-15 | トヨタ自動車株式会社 | 半導体装置 |
JP6367760B2 (ja) | 2015-06-11 | 2018-08-01 | トヨタ自動車株式会社 | 絶縁ゲート型スイッチング装置とその製造方法 |
CN110931548A (zh) * | 2019-12-16 | 2020-03-27 | 安建科技(深圳)有限公司 | 一种半导体器件结构及其制造方法 |
CN113948577A (zh) * | 2021-10-15 | 2022-01-18 | 捷捷微电(无锡)科技有限公司 | 一种高可靠性mosfet集成电路芯片及其制备方法 |
CN117711938B (zh) * | 2024-02-05 | 2024-06-14 | 深圳腾睿微电子科技有限公司 | 隔离槽型终端igbt器件及其制造方法 |
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JP5206541B2 (ja) * | 2008-04-01 | 2013-06-12 | 株式会社デンソー | 半導体装置およびその製造方法 |
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