JP5728007B2 - 電流集中に基づく色調整を伴うエレクトロルミネセント素子 - Google Patents
電流集中に基づく色調整を伴うエレクトロルミネセント素子 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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Description
以下の継続中の、及び/又は同時出願された米国特許出願、即ち、2009年5月5日に出願された、米国出願第61/175,640号「Re−Emitting Semiconductor Construction With Enhanced Extraction Efficiency」(代理人整理番号第64759US002号)、2009年5月5日に出願された、米国出願第61/175,632号「Semiconductor Devices Grown on Indium−Containing Substrates Utilizing Indium Depletion Mechanisms」(代理人整理番号第65434US002号)、2009年5月5日に出願された、米国出願第61/175,636号「Re−Emitting Semiconductor Carrier Devices For Use With LEDs and Methods of Manufacture」(代理人整理番号第65435US002号)、及び本出願と同日付けで出願された、米国出願第61/221,660号「White Light Electroluminescent Devices With Adjustable Color Temperature」(代理人整理番号第65330US002号)について言及し、これらの特徴は、本出願で開示される実施形態に組み込むことができる。
本発明は、一般的には固体半導体光源に関する。
Claims (3)
- 照明システムであって、
印加される電気信号に応じて発光するように適合されるエレクトロルミネセント素子と、
前記発光光の第1の部分を修正して第1の光成分を提供するように適合される第1の光修正材料と、
を備え、前記照明システムが、前記第1の光成分を、少なくとも、前記発光光の第2の部分と関連付けられる第2の光成分と組み合わせて、システム光学出力を生じ、
前記システム光学出力が、前記印加される電気信号の振幅に基づいて変化する色温度を有し、
色温度の前記変化が、電流集中の結果であり、
前記発光光が前記エレクトロルミネセント素子の出力表面から発光され、前記エレクトロルミネセント素子が、前記出力表面にわたる前記発光光の空間分布が前記印加される電気信号の振幅を変化させることにより当該電気信号の振幅の関数として変化することによって特徴付けられ、前記空間分布の前記変化が、前記エレクトロルミネセント素子に対して印加される電気信号の振幅を変化させることにより生じる電流集中の結果としてである、照明システム。 - 前記発光光が発光光スペクトルを有し、前記第1の光成分が、前記発光光スペクトルとは異なる第1のスペクトルを有する、請求項1に記載のシステム。
- 照明システムであって、
印加される電流に応じて出力表面から発光するように適合されるエレクトロルミネセント素子であって、該エレクトロルミネセント素子が、前記出力表面にわたる前記発光光の空間分布が該エレクトロルミネセント素子に対して印加される電気信号の振幅を変化させることにより生じる電流集中の結果として前記電気信号の振幅の関数として変化することによって特徴付けられる、エレクトロルミネセント素子と、
前記出力表面の第1の部分を被覆し、前記発光光の第1の部分を第1の光成分に変換するように適合される、第1の光変換材料と、
を備え、前記第1の光成分が、少なくとも第2の光成分と組み合わさってシステム光学出力を提供し、前記第2の光成分が、前記発光光の第2の部分と関連付けられ、
前記第1の光変換材料が、前記出力表面にわたる前記発光光の前記空間分布の前記変化が前記システム光学出力の色の変化を生じるように、空間的に分布される、照明システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22166409P | 2009-06-30 | 2009-06-30 | |
US61/221,664 | 2009-06-30 | ||
PCT/US2010/040009 WO2011008474A1 (en) | 2009-06-30 | 2010-06-25 | Electroluminescent devices with color adjustment based on current crowding |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012532452A JP2012532452A (ja) | 2012-12-13 |
JP2012532452A5 JP2012532452A5 (ja) | 2013-08-15 |
JP5728007B2 true JP5728007B2 (ja) | 2015-06-03 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012517773A Expired - Fee Related JP5728007B2 (ja) | 2009-06-30 | 2010-06-25 | 電流集中に基づく色調整を伴うエレクトロルミネセント素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8304976B2 (ja) |
EP (1) | EP2449608A1 (ja) |
JP (1) | JP5728007B2 (ja) |
KR (1) | KR20120055540A (ja) |
CN (1) | CN102473816B (ja) |
TW (1) | TW201110803A (ja) |
WO (1) | WO2011008474A1 (ja) |
Families Citing this family (7)
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EP2427924A1 (en) | 2009-05-05 | 2012-03-14 | 3M Innovative Properties Company | Re-emitting semiconductor carrier devices for use with leds and methods of manufacture |
CN102460741A (zh) | 2009-05-05 | 2012-05-16 | 3M创新有限公司 | 具有增大的提取效率的再发光半导体构造 |
KR20120016261A (ko) | 2009-05-05 | 2012-02-23 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 인듐 공핍 메커니즘을 이용하여 인듐-함유 기판 상에 성장된 반도체 디바이스 |
CN102473817A (zh) | 2009-06-30 | 2012-05-23 | 3M创新有限公司 | 无镉再发光半导体构造 |
WO2011002686A1 (en) | 2009-06-30 | 2011-01-06 | 3M Innovative Properties Company | White light electroluminescent devices with adjustable color temperature |
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KR20120016261A (ko) | 2009-05-05 | 2012-02-23 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 인듐 공핍 메커니즘을 이용하여 인듐-함유 기판 상에 성장된 반도체 디바이스 |
WO2011002686A1 (en) | 2009-06-30 | 2011-01-06 | 3M Innovative Properties Company | White light electroluminescent devices with adjustable color temperature |
CN102473817A (zh) | 2009-06-30 | 2012-05-23 | 3M创新有限公司 | 无镉再发光半导体构造 |
-
2010
- 2010-06-25 JP JP2012517773A patent/JP5728007B2/ja not_active Expired - Fee Related
- 2010-06-25 EP EP10729750A patent/EP2449608A1/en not_active Withdrawn
- 2010-06-25 CN CN201080029540.2A patent/CN102473816B/zh not_active Expired - Fee Related
- 2010-06-25 WO PCT/US2010/040009 patent/WO2011008474A1/en active Application Filing
- 2010-06-25 KR KR1020127002064A patent/KR20120055540A/ko not_active Application Discontinuation
- 2010-06-25 US US13/379,933 patent/US8304976B2/en not_active Expired - Fee Related
- 2010-06-29 TW TW099121300A patent/TW201110803A/zh unknown
Also Published As
Publication number | Publication date |
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WO2011008474A1 (en) | 2011-01-20 |
CN102473816A (zh) | 2012-05-23 |
JP2012532452A (ja) | 2012-12-13 |
US8304976B2 (en) | 2012-11-06 |
KR20120055540A (ko) | 2012-05-31 |
CN102473816B (zh) | 2015-03-11 |
US20120091882A1 (en) | 2012-04-19 |
TW201110803A (en) | 2011-03-16 |
EP2449608A1 (en) | 2012-05-09 |
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