JP5709739B2 - パワー半導体装置 - Google Patents
パワー半導体装置 Download PDFInfo
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- JP5709739B2 JP5709739B2 JP2011290365A JP2011290365A JP5709739B2 JP 5709739 B2 JP5709739 B2 JP 5709739B2 JP 2011290365 A JP2011290365 A JP 2011290365A JP 2011290365 A JP2011290365 A JP 2011290365A JP 5709739 B2 JP5709739 B2 JP 5709739B2
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- 239000004065 semiconductor Substances 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 claims description 38
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- 230000005489 elastic deformation Effects 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 8
- 230000003014 reinforcing effect Effects 0.000 claims description 5
- 239000012777 electrically insulating material Substances 0.000 claims description 2
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 4
- 235000014676 Phragmites communis Nutrition 0.000 description 3
- 239000011093 chipboard Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- 229920000647 polyepoxide Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Description
以下、本発明の実施の形態1について説明する。まず、図1を参照して実施の形態1に係るパワー半導体装置100の構成を説明する。パワー半導体装置100は、パワーチップ1と、パワーチップ基板2と、制御基板3と、パワーチップ1と制御基板3とを電気的に接続するリード4と、を備える。
図2を参照して、本発明の実施の形態2について説明する。本実施の形態2によるパワー半導体装置100は、基本的には図1に示したパワー半導体装置100と同様の構成を備えるが、パワーチップ1およびパワーチップ基板2の表面と、パワーチップ1およびパワーチップ基板2に接着したリード4の根元部4bとを覆う、保護部材13をさらに備える。
Claims (4)
- パワーチップを搭載したパワーチップ基板と、
前記パワーチップに関連する電子部品を搭載した制御基板と、
前記パワーチップと前記制御基板とを電気的に接続するリードと、
前記リードの一端と前記パワーチップとを接続する接続部材と、を備え、
前記リードは、弾性部と、前記弾性部より剛性の高い根元部と、を含み、
前記リードは、前記接続部材側に前記根元部を含み、
前記根元部と前記パワーチップの表面とを覆う保護部材をさらに備え、
前記弾性部は前記保護部材から露出されており、
前記リードの他端と前記制御基板とは、前記リードの前記弾性部が弾性変形することにより互いに当接し、
前記パワーチップと前記制御基板とを電気的に接続する他のリードと、
前記リードと前記他のリードとの間に位置し、電気絶縁性の材料からなる仕切り部材と、をさらに備える、パワー半導体装置。 - パワーチップを搭載したパワーチップ基板と、
前記パワーチップに関連する電子部品を搭載した制御基板と、
前記パワーチップと前記制御基板とを電気的に接続するリードと、
前記リードの一端と前記パワーチップとを接続する接続部材と、を備え、
前記リードは、弾性部と、前記弾性部より剛性の高い根元部と、を含み、
前記リードの他端と前記制御基板とは、前記リードの前記弾性部が弾性変形することにより互いに当接し、
前記リードは、前記接続部材側に前記根元部を含み、
前記根元部と前記パワーチップの表面とを覆う保護部材と、さらに、
前記保護部材上に位置して前記リードの前記弾性部を覆い、前記弾性部の弾性変形に伴って変形可能な硬度を有する上層保護部材とを備える、パワー半導体装置。 - 前記リードの前記根元部に、貫通孔もしくは切欠きが形成されている、請求項1または請求項2に記載のパワー半導体装置。
- 前記リードの前記根元部は、補強部材を含む、請求項1または請求項2に記載のパワー半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011290365A JP5709739B2 (ja) | 2011-12-29 | 2011-12-29 | パワー半導体装置 |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011290365A JP5709739B2 (ja) | 2011-12-29 | 2011-12-29 | パワー半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2013140862A JP2013140862A (ja) | 2013-07-18 |
JP5709739B2 true JP5709739B2 (ja) | 2015-04-30 |
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JP2011290365A Active JP5709739B2 (ja) | 2011-12-29 | 2011-12-29 | パワー半導体装置 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6255771B2 (ja) * | 2013-07-26 | 2018-01-10 | 住友電気工業株式会社 | 半導体モジュール |
JP2015142018A (ja) * | 2014-01-29 | 2015-08-03 | 三菱電機株式会社 | 電力用半導体装置 |
DE102015208348B3 (de) | 2015-05-06 | 2016-09-01 | Siemens Aktiengesellschaft | Leistungsmodul sowie Verfahren zum Herstellen eines Leistungsmoduls |
JP2017017206A (ja) * | 2015-07-02 | 2017-01-19 | 三菱電機株式会社 | 車載用電子制御装置 |
CN105679747A (zh) * | 2016-03-09 | 2016-06-15 | 嘉兴斯达半导体股份有限公司 | 一种带弹片双层灌胶的功率模块及制造方法 |
US10937731B2 (en) | 2016-07-27 | 2021-03-02 | Hitachi, Ltd. | Semiconductor module and method for manufacturing semiconductor module |
JP7244339B2 (ja) * | 2019-04-19 | 2023-03-22 | 株式会社三社電機製作所 | 半導体モジュール用外部端子 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3923258B2 (ja) * | 2001-01-17 | 2007-05-30 | 松下電器産業株式会社 | 電力制御系電子回路装置及びその製造方法 |
JP4764979B2 (ja) * | 2004-06-08 | 2011-09-07 | 富士電機株式会社 | 半導体装置 |
JP5369798B2 (ja) * | 2009-03-18 | 2013-12-18 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5100694B2 (ja) * | 2009-04-01 | 2012-12-19 | 三菱電機株式会社 | 半導体装置 |
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