JP5690863B2 - 粒子光学装置 - Google Patents
粒子光学装置 Download PDFInfo
- Publication number
- JP5690863B2 JP5690863B2 JP2013093279A JP2013093279A JP5690863B2 JP 5690863 B2 JP5690863 B2 JP 5690863B2 JP 2013093279 A JP2013093279 A JP 2013093279A JP 2013093279 A JP2013093279 A JP 2013093279A JP 5690863 B2 JP5690863 B2 JP 5690863B2
- Authority
- JP
- Japan
- Prior art keywords
- ion beam
- main axis
- processing system
- optical device
- electron microscope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002245 particle Substances 0.000 title claims abstract description 31
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 94
- 230000003287 optical effect Effects 0.000 claims abstract description 30
- 238000010894 electron beam technology Methods 0.000 claims description 42
- 238000007689 inspection Methods 0.000 claims description 11
- 230000001419 dependent effect Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000001493 electron microscopy Methods 0.000 abstract 3
- 230000005684 electric field Effects 0.000 description 34
- 150000002500 ions Chemical class 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/145—Combinations of electrostatic and magnetic lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
Description
Claims (11)
- 粒子光学装置であって、
電子顕微鏡システム(3)の主軸(5)に沿って被検査対象物(13)に向けて一次電子ビーム(19)を照射する電子顕微鏡システム(3)と、
イオンビーム加工システム(7)の主軸(9)に沿って前記被検査対象物(13)に向かってイオンビームを照射するイオンビーム加工システム(7)とを備え、前記電子顕微鏡システム(3)の前記主軸(5)と前記イオンビーム加工システム(7)の前記主軸(9)とは、角度(α)を成すように相互に方向づけられており、
前記電子顕微鏡システム(3)は、前記電子ビーム(19)を集束させるための、磁界レンズ(45)および静電レンズ(47)を備える対物レンズ(43)を備え、かつ、前記電子顕微鏡システム(3)の前記主軸(5)が通る環状電極(59)を備え、該環状電極(59)は、前記被検査対象物(13)の位置(11)近傍に配置された前記電子顕微鏡システム(3)の構成要素であって、
前記環状電極(59)と、前記イオンビーム加工システム(7)の前記主軸(9)との間に配置された、シールド電極(81)を備え、
前記被検査対象物(13)の前記位置(11)に面する、前記シールド電極(81)の前面(85)が、前記イオンビーム加工システム(7)の前記主軸(9)に対して垂直な数学的な面(15)に対して斜め方向に延在し、
前記シールド電極(81)の前記前面(85)は、前記電子顕微鏡システム(3)の前記主軸(5)に対して垂直な数学的な面(15’)に対して略平行に延在することを特徴とする、粒子光学装置。 - 前記シールド電極(81)は、前記イオンビーム加工システム(7)の前記主軸(9)に垂直な、少なくとも1つの数学的な直線が、前記シールド電極(81)および前記環状電極(59)の両方と交差するように配置されたことを特徴とする、請求項1に従う粒子光学装置。
- 前記シールド電極(81)は、前記イオンビーム加工システム(7)のハウジングの1部分に導電的に接続されており、前記1部分は、前記被検査対象物(13)の前記位置(11)の最近傍に位置することを特徴とする、請求項1または2に従う粒子光学装置。
- 前記シールド電極(81)に電圧を供給するための電圧源を更に備える、請求項1または2に記載の粒子光学装置。
- 前記イオンビーム加工システム(7)の前記主軸(9)に面する、前記シールド電極(81)の表面が、凹んで湾曲していることを特徴とする、請求項1〜4のいずれか1項に記載の粒子光学装置。
- 前記シールド電極(81)は、前記イオンビーム加工システム(7)の前記主軸(9)を、少なくとも部分的に包含するスリーブとして構成されていることを特徴とする、請求項5に従う粒子光学装置。
- 前記スリーブは、前記被検査対象物(13)の前記位置(11)に向かって、円錐状に先細ることを特徴とする、請求項6に従う粒子光学装置。
- 前記環状電極(59)は、前記被検査対象物(13)の前記位置(11)に向かって、円錐状に先細ることを特徴とする、請求項1〜7のいずれか1項に記載の粒子光学装置。
- 前記環状電極(59)に電圧を供給するための電圧源(60)を更に備える、請求項1〜8のいずれか1項に記載の粒子光学装置。
- 前記被検査対象物(13)を、前記電子顕微鏡システム(3)の前記主軸(5)に対して、前記対象物の表面(15)の少なくとも2つの異なる方向において保持するように構成された対象物ホルダ(16)を更に含むことを特徴とする、請求項1〜9のいずれか1項に記載の粒子光学装置。
- 前記粒子光学装置の操作中に前記電圧源(60)から前記環状電極(59)に供給される電圧は、前記電子顕微鏡システム(3)の前記主軸(5)に対する角度が異なる前記被検査対象物(13)の前記表面(15)について、異なる値であることを特徴とする、請求項9に従属する請求項10に記載の粒子光学装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006059162A DE102006059162B4 (de) | 2006-12-14 | 2006-12-14 | Teilchenoptische Anordnung |
DE102006059162.3 | 2006-12-14 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009540623A Division JP5601838B2 (ja) | 2006-12-14 | 2007-11-23 | 粒子光学装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013191571A JP2013191571A (ja) | 2013-09-26 |
JP2013191571A5 JP2013191571A5 (ja) | 2014-04-10 |
JP5690863B2 true JP5690863B2 (ja) | 2015-03-25 |
Family
ID=39362543
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009540623A Active JP5601838B2 (ja) | 2006-12-14 | 2007-11-23 | 粒子光学装置 |
JP2013093279A Active JP5690863B2 (ja) | 2006-12-14 | 2013-04-26 | 粒子光学装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009540623A Active JP5601838B2 (ja) | 2006-12-14 | 2007-11-23 | 粒子光学装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8217350B2 (ja) |
EP (1) | EP2095391B1 (ja) |
JP (2) | JP5601838B2 (ja) |
AT (1) | ATE533172T1 (ja) |
DE (1) | DE102006059162B4 (ja) |
WO (1) | WO2008071303A2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006059162B4 (de) | 2006-12-14 | 2009-07-09 | Carl Zeiss Nts Gmbh | Teilchenoptische Anordnung |
DE102008045336B4 (de) | 2008-09-01 | 2022-05-25 | Carl Zeiss Microscopy Gmbh | System zur Bearbeitung einer Probe mit einem Laserstrahl und einem Elektronenstrahl oder einem Ionenstrahl |
DE102008049655A1 (de) | 2008-09-30 | 2010-04-08 | Carl Zeiss Nts Gmbh | Partikelstrahlsystem und Verfahren zum Betreiben desselben |
DE102010001346B4 (de) | 2010-01-28 | 2014-05-08 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät und Verfahren zum Betreiben eines Teilchenstrahlgeräts |
DE102010001347A1 (de) * | 2010-01-28 | 2011-08-18 | Carl Zeiss NTS GmbH, 73447 | Vorrichtung zur Übertragung von Energie und/oder zum Transport eines Ions sowie Teilchenstrahlgerät mit einer solchen Vorrichtung |
DE102010001349B9 (de) | 2010-01-28 | 2014-08-28 | Carl Zeiss Microscopy Gmbh | Vorrichtung zum Fokussieren sowie zum Speichern von Ionen |
DE102010008296A1 (de) | 2010-02-17 | 2011-08-18 | Carl Zeiss NTS GmbH, 73447 | Laserbearbeitungssystem, Objekthalter und Laserbearbeitungsverfahren |
DE102010011898A1 (de) | 2010-03-18 | 2011-09-22 | Carl Zeiss Nts Gmbh | Inspektionssystem |
DE102010024625A1 (de) * | 2010-06-22 | 2011-12-22 | Carl Zeiss Nts Gmbh | Verfahren zum Bearbeiten eines Objekts |
DE102011109449B9 (de) * | 2011-08-04 | 2013-04-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum kalibrieren eines laserscanners, verwendung des verfahrens und bearbeitungssystem mit laserscanner |
EP2811506B1 (en) * | 2013-06-05 | 2016-04-06 | Fei Company | Method for imaging a sample in a dual-beam charged particle apparatus |
JP6404736B2 (ja) * | 2015-02-06 | 2018-10-17 | 株式会社日立ハイテクノロジーズ | 複合荷電粒子線装置 |
JP6812561B2 (ja) | 2017-09-04 | 2021-01-13 | 株式会社日立ハイテク | 荷電粒子線装置 |
US10504684B1 (en) * | 2018-07-12 | 2019-12-10 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | High performance inspection scanning electron microscope device and method of operating the same |
RU186334U1 (ru) * | 2018-10-19 | 2019-01-16 | Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт" | Держатель для облучения образцов заряженными частицами |
DE102018131609B3 (de) * | 2018-12-10 | 2020-02-06 | Carl Zeiss Microscopy Gmbh | Partikelstrahlsystem und Verfahren zum Betreiben eines Partikelstrahlsystems |
DE102018131614B3 (de) | 2018-12-10 | 2020-02-06 | Carl Zeiss Microscopy Gmbh | Partikelstrahlsystem und Verfahren zum Betreiben eines Partikelstrahlsystems |
DE102019133658A1 (de) | 2019-12-10 | 2021-06-10 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Bearbeiten einer mikrostrukturierten Komponente |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4926054A (en) * | 1988-03-17 | 1990-05-15 | Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh | Objective lens for focusing charged particles in an electron microscope |
JP2811073B2 (ja) * | 1988-11-01 | 1998-10-15 | セイコーインスツルメンツ株式会社 | 断面加工観察装置 |
JP3372138B2 (ja) | 1995-06-26 | 2003-01-27 | 株式会社日立製作所 | 走査形電子顕微鏡 |
JP3474082B2 (ja) * | 1997-07-01 | 2003-12-08 | セイコーインスツルメンツ株式会社 | 電子線装置 |
US6509564B1 (en) * | 1998-04-20 | 2003-01-21 | Hitachi, Ltd. | Workpiece holder, semiconductor fabricating apparatus, semiconductor inspecting apparatus, circuit pattern inspecting apparatus, charged particle beam application apparatus, calibrating substrate, workpiece holding method, circuit pattern inspecting method, and charged particle beam application method |
JP3117950B2 (ja) * | 1998-05-21 | 2000-12-18 | セイコーインスツルメンツ株式会社 | 荷電粒子装置 |
JP4162343B2 (ja) * | 1999-12-24 | 2008-10-08 | エスアイアイ・ナノテクノロジー株式会社 | 電子線装置 |
DE10233002B4 (de) * | 2002-07-19 | 2006-05-04 | Leo Elektronenmikroskopie Gmbh | Objektivlinse für ein Elektronenmikroskopiesystem und Elektronenmikroskopiesystem |
JP4128487B2 (ja) * | 2003-06-02 | 2008-07-30 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
DE602004012056T2 (de) * | 2004-01-21 | 2009-03-12 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Fokussierlinse für Strahlen geladener Teilchen |
JP4563049B2 (ja) * | 2004-02-24 | 2010-10-13 | エスアイアイ・ナノテクノロジー株式会社 | Fib−sem複合装置を用いたイオンビーム加工方法 |
JP2006114225A (ja) * | 2004-10-12 | 2006-04-27 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
DE102006059162B4 (de) | 2006-12-14 | 2009-07-09 | Carl Zeiss Nts Gmbh | Teilchenoptische Anordnung |
-
2006
- 2006-12-14 DE DE102006059162A patent/DE102006059162B4/de not_active Expired - Fee Related
-
2007
- 2007-11-23 WO PCT/EP2007/010193 patent/WO2008071303A2/de active Application Filing
- 2007-11-23 AT AT07846793T patent/ATE533172T1/de active
- 2007-11-23 JP JP2009540623A patent/JP5601838B2/ja active Active
- 2007-11-23 EP EP07846793A patent/EP2095391B1/de active Active
- 2007-11-23 US US12/448,229 patent/US8217350B2/en active Active
-
2013
- 2013-04-26 JP JP2013093279A patent/JP5690863B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP2095391A2 (de) | 2009-09-02 |
DE102006059162B4 (de) | 2009-07-09 |
JP2010512628A (ja) | 2010-04-22 |
EP2095391B1 (de) | 2011-11-09 |
WO2008071303A2 (de) | 2008-06-19 |
US20090309025A1 (en) | 2009-12-17 |
DE102006059162A1 (de) | 2008-06-26 |
ATE533172T1 (de) | 2011-11-15 |
JP2013191571A (ja) | 2013-09-26 |
JP5601838B2 (ja) | 2014-10-08 |
WO2008071303A3 (de) | 2008-09-12 |
US8217350B2 (en) | 2012-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5690863B2 (ja) | 粒子光学装置 | |
US11562881B2 (en) | Charged particle beam system | |
KR102214294B1 (ko) | 1차 하전 입자 빔렛들의 어레이를 이용한 시료의 검사를 위한 하전 입자 빔 디바이스 | |
KR102480232B1 (ko) | 복수의 하전 입자 빔들의 장치 | |
US10236156B2 (en) | Apparatus of plural charged-particle beams | |
JP5886663B2 (ja) | 電子線応用装置およびレンズアレイ | |
WO2014188882A1 (ja) | 荷電粒子線応用装置 | |
EP2320217B1 (en) | SACP method and particle optical system for performing the method | |
US20080067376A1 (en) | Charged particle beam apparatus | |
JP6278553B2 (ja) | 2次電子光学系及び検出デバイス | |
TW201833968A (zh) | 用於檢查試樣之方法以及帶電粒子多束裝置 | |
US8618480B2 (en) | Charged particle beam apparatus | |
US20060097184A1 (en) | Focusing lens and charged particle beam device for tilted landing angle operation | |
US7838830B2 (en) | Charged particle beam apparatus and method for operating a charged particle beam apparatus | |
TW201611075A (zh) | 利用雙威恩過濾器單色器之電子束成像 | |
CN111739782A (zh) | 将电子从样本转移到能量分析仪的设备和方法以及电子能谱仪设备 | |
US10504691B2 (en) | Method for generating a composite image of an object and particle beam device for carrying out the method | |
US7170068B2 (en) | Method and system for discharging a sample | |
JP2004513477A (ja) | 静電対物に調整可能な最終電極を設けたsem | |
TWI622077B (zh) | 帶電粒子束裝置、用於帶電粒子束裝置的系統、及用於操作帶電粒子束裝置的方法 | |
JP2007012516A (ja) | 荷電粒子ビーム装置及び荷電粒子ビームを用いた試料情報検出方法 | |
US8101911B2 (en) | Method and device for improved alignment of a high brightness charged particle gun | |
US10665423B2 (en) | Analyzing energy of charged particles | |
JP2003187730A (ja) | ビームセパレータ及び反射電子顕微鏡 | |
JP7188910B2 (ja) | 粒子ビームを生成するための粒子源及び粒子光学装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140109 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140507 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140724 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150202 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5690863 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |