JP5680330B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5680330B2 JP5680330B2 JP2010100321A JP2010100321A JP5680330B2 JP 5680330 B2 JP5680330 B2 JP 5680330B2 JP 2010100321 A JP2010100321 A JP 2010100321A JP 2010100321 A JP2010100321 A JP 2010100321A JP 5680330 B2 JP5680330 B2 JP 5680330B2
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- bonding
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Classifications
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Description
ここで、半導体装置の製造工程には、いわゆる前工程における成膜・レジスト塗布・露光・現像・エッチング・レジスト除去などによりウェーハの表面に回路パターンを形成する工程、検査工程、洗浄工程、熱処理工程、不純物導入工程、拡散工程、平坦化工程などがある。また、いわゆる後工程においては、ダイシング工程、ダイボンディング工程、ボンディング工程、封止工程などの組立工程、機能や信頼性の検査を行う検査工程などがある。
なお、図1は、後述する接合層を形成する接合剤の粘度、ダイボンディング工程における接合層の粘度、ボンディング工程における接合層の粘度、封止工程における接合層の粘度を概念的に表したものである。また、図中の矢印は、各工程における粘度範囲を概念的に表したものである。
樹脂としては、絶縁性樹脂を例示することができる。また、絶縁性樹脂としては、熱硬化性樹脂や熱可塑性樹脂などを例示することができる。この場合、接合性や耐熱性の観点からはエポキシ樹脂、アクリル樹脂、ウレタン樹脂、シリコン樹脂などの熱硬化性樹脂とすることが好ましく、エポキシ樹脂とすることがより好ましい。エポキシ樹脂としては、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ノボラック型エポキシ樹脂などを例示することができる。なお、これらの樹脂を単独で用いてもよいし、2種類以上を混合して用いてもよい。
膜状に付着させた接合剤の加熱には、ヒータなどの加熱手段を用いることができる。例えば、ヒータなどが内蔵された載置部にウェーハを載置し、ウェーハを介して接合剤を加熱するようにすることができる。
この場合、加熱温度(載置部の温度)は、例えば、40℃以上、120℃以下とすることができる。
例えば、接合剤の溶質をエポキシ樹脂、溶媒をγ−ブチロラクトン(GBL)とし、接合剤におけるエポキシ樹脂の割合を25重量%、接合剤を膜状に付着させた際の厚みを10μm(マイクロメートル)程度とした場合、加熱温度(載置部の温度)を70℃程度とすることができる。
接合層の厚みを厚くする場合には、前述した手順を繰り返すことで積層するようにして接合層を形成するようにすればよい。
ダイボンディング工程においては、裏面に接合層が形成された半導体素子を粘着シートから一個ずつニードルで突き上げ、その突き上げられた半導体素子をボンディングコレットで真空吸着してピックアップする。その後、ボンディングコレットでピックアップされた半導体素子を加熱された基材の所定位置に接合層を介して加圧接合する。すなわち、ダイボンディング工程においては、半導体素子の一方の面に設けられた接合層を介して半導体素子を基材の所定位置に接合する。
一方、接合層の粘度が低すぎると、図2(b)に示すように、接合部分に微小ボイド101が発生することがある。この様な微小ボイド101が発生すると接合強度が低下するおそれがある。また、半導体素子を基材と接合する際に位置ずれを起こす要因ともなる。
このような不具合は、非接触型の塗布装置をもちいて半導体素子の裏面に接合層を形成する場合に特有なものである。一方、完成された接合層であるDAFを半導体素子の裏面に貼り付ける場合にはこのような不具合は生じない。
また、前述した接合層の形成とダイボンディング工程との間において、加熱炉などを用いて加熱処理を行うようにすることができる。加熱炉としては、例えば、プリキュア(Precure)を行うキュア炉などとすることができる。その様なキュア炉としては、ベルトコンベアの上下にヒータなどの加熱手段を搭載したものや、温風を用いて加熱を行うものなどを例示することができる。
この場合、例えば、接合剤の溶質がエポキシ樹脂、溶媒がγ−ブチロラクトン(GBL)、接合剤におけるエポキシ樹脂の割合が25重量%、接合層の厚みが10μm(マイクロメートル)程度、加熱処理前の接合層の25℃における粘度が0.015Pa・s程度の場合、加熱温度を90℃程度、加熱時間を1時間程度とすることができる。この様にすれば、150℃における粘度が100Pa・s程度の接合層とすることができる。
なお、0.015Pa・sの場合はB型粘度計(JIS K 7117−2)を用い、150℃における粘度が100Pa・sの場合は動的粘弾性測定装置(平行平板振動レオメータ)を用いて測定した。
ボンディング工程においては、半導体素子に形成された端子と、基板やリードフレームなどの基材に形成された端子と、をボンディングワイヤによって接続するワイヤボンディングが行なわれる。
この場合、接合層の粘度を高くすればボンディングワイヤの接合不良、接合強度不足などを抑制することができる。しかしながら、接合層の粘度を高くしすぎると、後述する封止工程において接合層の粘度制御ができず接合層にボイドが発生するおそれがある。そのため、ボンディング工程における接合層の粘度制御においては、すくなくとも封止工程における接合層の粘度の適正範囲の上限値を超えないように制御される。
すなわち、接合層の粘度を高くするために接合層の溶媒を揮発させて接合層の粘度を一旦高くしてしまうと、接合層の粘度を下げることは出来ないからである。
この場合、封止工程における接合層の粘度が適正範囲の上限値以下に制御される場合には、その値を超えないようにすることが好ましい。すなわち、ボンディング工程における接合層の粘度は、封止工程における接合層の粘度を越えないように制御されるようにすることが好ましい。
また、ボンディング工程において接合層を加熱して粘度の制御を行うこともできる。
封止工程においては、半導体素子や端子間を接続するボンディングワイヤなどを樹脂で封止する。
この様な樹脂封止を行う樹脂モールド装置は、型開きをすることができる固定型と可動型とを有しており、固定型と可動型とを加熱する加熱手段を備えている。また、固定型と可動型とを型締めすることによりキャビティが形成されるようになっている。
接合層の中央部に凸部(例えば、異物が接合層中に残り、半導体素子と基材との間に隙間が生じた部分)が形成される場合がある。この様な凸部が形成されている場合、接合層の粘度(接合層の硬化の程度)が高すぎると、溶融化された樹脂が凸部の内部にまで充填されにくく、図3に示すようなボイド102が発生することがある。
一方、封止工程における接合層の粘度の下限は、前の工程の接合層の粘度の下限に依存する。本実施例の場合、封止工程における接合層の粘度の下限はボンディング工程の下限値である15000Pa・s以上となる。
また、封止工程において接合層を加熱して粘度の制御を行うこともできる。
(接合剤の組成比)
本実施の形態に係る接合剤は以下の組成比で作成可能である。例えば、エポキシ樹脂としてjER1001(ジャパンエポキシレジン株式会社製)100質量部、エポキシ用硬化剤としてフェノール樹脂のBRG−556(昭和高分子株式会社製)10質量部、シランカップリング剤としてKBM403(信越化学工業株式会社製)2質量部、硬化促進剤として2E4MZ(四国化成工業株式会社製)0.2質量部およびU−CAT SA 102(サンアプロ株式会社製)1.5質量部、界面活性剤としてBYK−302(ビックケミージャパン社製)0.2質量部、有機溶剤としてガンマーブチロラクトン(GBL、三菱化学株式会社製)400質量部を混合し、60℃で加熱溶解して作成した接合剤組成物(組成A)。
表1は、組成Aの接合剤を用い各組立工程における接合層の粘度を制御した場合の効果を一例として例示するものである。
表2は、組成Bの接合剤を用い各組立工程における接合層の粘度を制御した場合の効果を一例として例示するものである。
表3は、組成Cの接合剤を用い各組立工程における接合層の粘度を制御した場合の効果を一例として例示するものである。
*1)チップ位置ずれ:半導体素子のX、Y方向(水平面内)の位置ずれが100μm(マイクロメートル)以内の場合、「無」としている。
*2)ボイド:超音波映像装置(株式会社日立エンジニアリング・アンド・サービス)で接合状態を撮像し、ボイド(空隙)が全面積中の5%以下の場合を「無」としている。
*3)異物起因の剥離:超音波映像装置(株式会社日立エンジニアリング・アンド・サービス)で接合状態を撮像し、ボイド(空隙)が全面積中の5%以下の場合を「無」としている。
また、表3に例示をした場合においては、ボンディング工程において接合不良が発生したため、封止工程の評価を行わなかった。
前述の実施の形態に関して、当業者が適宜、構成要素の追加、削除若しくは設計変更を行ったもの、または、工程の追加、省略若しくは条件変更を行ったものも、本発明の特徴を備えている限り、本発明の範囲に包含される。
Claims (3)
- 非接触型の塗布装置をもちいて半導体素子の一方の面に設けられた接合層をBステージ状態とした後、前記半導体素子を基材の所定位置に接合するダイボンディング工程と、
前記半導体素子に形成された端子と、前記基材に形成された端子と、をボンディングワイヤによって接続するボンディング工程と、
前記半導体素子と前記ボンディングワイヤとを封止する封止工程と、
を備え、
前記ダイボンディング工程のダイボンディング温度における前記接合層の粘度が、10Pa・s以上、3000Pa・s以下であり、
前記ボンディング工程のボンディング温度における前記接合層の粘度が、15000Pa・s以上、10 7 Pa・s以下に制御され、
前記封止工程の温度における前記接合層の粘度は、15000Pa・s以上、10 7 Pa・s以下となるように制御されること、
を特徴とする半導体装置の製造方法。 - 前記接合層を形成する接合剤の25℃における粘度は、0.015Pa・s以下となるように制御されることを特徴とする請求項1記載の半導体装置の製造方法。
- 非接触型の塗布装置は、インクジェット法またはスプレー法を実施することを特徴とする請求項1または2に記載の半導体装置の製造方法。
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