JP5667206B2 - 半導体材料ドーピング - Google Patents
半導体材料ドーピング Download PDFInfo
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- JP5667206B2 JP5667206B2 JP2012542233A JP2012542233A JP5667206B2 JP 5667206 B2 JP5667206 B2 JP 5667206B2 JP 2012542233 A JP2012542233 A JP 2012542233A JP 2012542233 A JP2012542233 A JP 2012542233A JP 5667206 B2 JP5667206 B2 JP 5667206B2
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- 239000004065 semiconductor Substances 0.000 title description 14
- 239000000463 material Substances 0.000 title description 12
- 230000004888 barrier function Effects 0.000 claims description 89
- 239000010410 layer Substances 0.000 claims description 49
- 239000002019 doping agent Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 46
- 238000004519 manufacturing process Methods 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 15
- 230000005283 ground state Effects 0.000 claims description 10
- 239000000969 carrier Substances 0.000 claims description 8
- 230000005428 wave function Effects 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 18
- 238000013461 design Methods 0.000 description 14
- 230000004913 activation Effects 0.000 description 13
- 238000001994 activation Methods 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 230000010287 polarization Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 239000004047 hole gas Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 238000004590 computer program Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910016455 AlBN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
Description
Claims (19)
- 構造を製造する方法であって、
前記構造中の量子井戸と隣接するバリアとの間の目標バレンスバンド不連続性を選択するステップであって、動作温度において、前記隣接するバリア中のドーパントのドーパントエネルギーレベルが、前記量子井戸に関するバレンスエネルギーバンド端又は前記量子井戸に関するバレンスエネルギーバンド中の自由キャリアについての基底状態エネルギーのうちの少なくとも一方の3熱エネルギー内である、ステップと、
前記ドーパントの波動関数の推定した特性サイズに対応する前記量子井戸及び前記隣接するバリアの各々の目標厚さを選択するステップと、
前記目標バレンスバンド不連続性に対応する実際のバレンスバンド不連続性及び前記目標厚さと等しい実際の厚さを有する前記構造中の前記量子井戸及び前記隣接するバリアを形成するステップであって、前記形成するステップが前記ドーパントを用いて前記量子井戸及び前記隣接するバリアをドーピングするステップを含む、ステップと、
を備える方法。 - 前記形成するステップが、前記目標バレンスバンド不連続性にしたがって前記量子井戸及び前記隣接するバリアの各々の中の少なくとも1つの元素のモル分率を調節するステップをさらに含む、請求項1に記載の方法。
- 前記量子井戸及び前記隣接するバリアの各々が、III族窒化物層を備え、前記III族窒化物層中の少なくとも1つのIII族元素の前記モル分率が前記目標バレンスバンド不連続性にしたがって調節される、請求項2に記載の方法。
- 前記ドーパントが浅い不純物を含み、ボーア半径定数を使用して前記ドーパントの前記波動関数の前記特性サイズを推定するステップをさらに含む、請求項1に記載の方法。
- 前記ドーパントが深い不純物を含み、前記量子井戸の厚さが単一のモノレイヤとボーア半径定数との間の範囲内であり、前記隣接するバリアの厚さが、単一のモノレイヤとボーア半径定数との間の範囲内である、請求項1に記載の方法。
- 前記量子井戸に関する前記バレンスエネルギーバンド端及び前記ドーパントエネルギーレベルが、3熱エネルギー内である、請求項1に記載の方法。
- 前記選択するステップ及び形成するステップが、前記構造の超格子層を製造するステップの一部として実行される、請求項1に記載の方法。
- 前記構造の前記超格子層を前記製造するステップが、前記構造のオーミックコンタクトを製造するステップの一部として実行される、請求項7に記載の方法。
- デバイスを製造する方法であって、
前記デバイス用の構造を製造するステップであって、前記構造が、量子井戸及び隣接するバリアを備えたヘテロ構造又は超格子層のうちの少なくとも1つを含むステップを備え、
前記構造を製造するステップが、
前記量子井戸と前記隣接するバリアとの間の目標バレンスバンド不連続性を選択するステップであって、動作温度において、前記隣接するバリア中のドーパントのドーパントエネルギーレベルが、前記量子井戸に関するバレンスエネルギーバンド端又は前記量子井戸に関するバレンスエネルギーバンド中の自由キャリアについての基底状態エネルギーのうちの少なくとも一方の3熱エネルギー内である、ステップと、
前記ドーパントの波動関数の推定した特性サイズに対応する前記量子井戸及び前記隣接するバリアの各々の目標厚さを選択するステップと、
前記目標バレンスバンド不連続性に対応する実際のバレンスバンド不連続性及び前記目標厚さと等しい実際の厚さを有する前記構造中の前記量子井戸及び前記隣接するバリアを形成するステップであって、前記ドーパントを用いて前記量子井戸及び前記隣接するバリアをドーピングすることを含む、ステップと、
を含む方法。 - 前記デバイスが、発光ダイオード、スーパールミネッセントダイオード、レーザ、光検出器、又はショットキーダイオードのうちの1つである、請求項9に記載の方法。
- 前記デバイスが、ヘテロ構造電界効果型トランジスタ、バイポーラ接合トランジスタ、スイッチ、又は無線周波数スイッチのうちの1つである、請求項9に記載の方法。
- 前記構造が、前記デバイス用の中間層又はコンタクト層のうちの1つを含む、請求項9に記載の方法。
- 前記量子井戸及び前記隣接するバリアの各々が、III族窒化物層を備え、前記形成するステップが、前記目標バレンスバンド不連続性にしたがって前記量子井戸及び前記隣接するバリアの各々の中の少なくとも1つのIII族元素のモル分率を調節することをさらに含む、請求項9に記載の方法。
- 前記少なくとも1つのIII族元素がアルミニウムである、請求項13に記載の方法。
- 量子井戸及び隣接するバリアを備えたデバイス用のヘテロ構造又は超格子層のうちの少なくとも1つを設計するステップを備え、
前記設計するステップが、前記量子井戸と前記隣接するバリアとの間の目標バレンスバンド不連続性を選択するステップであって、動作温度において、前記隣接するバリア中のドーパントのドーパントエネルギーレベルが、前記量子井戸に関するバレンスエネルギーバンド端又は前記量子井戸に関するバレンスエネルギーバンド中の自由キャリアについての基底状態エネルギーのうちの少なくとも一方の3熱エネルギー内である、ステップと、
前記ドーパントの波動関数の推定した特性サイズに対応する前記量子井戸及び前記隣接するバリアの各々の目標厚さを選択するステップと、
を含む方法。 - 前記デバイスを製造するステップをさらに備え、
前記製造するステップが、前記目標バレンスバンド不連続性に対応する実際のバレンスバンド不連続性及び前記目標厚さと等しい実際の厚さを有する前記構造中の前記量子井戸及び前記隣接するバリアを形成することによって前記構造を製造するステップであって、前記形成することが、前記ドーパントを用いて前記量子井戸及び前記隣接するバリアをドーピングすることを含む、ステップを含む、請求項15に記載の方法。 - 回路を製造するステップをさらに備え、前記回路を前記製造するステップが、前記デバイスに少なくとも1つの入力部及び少なくとも1つの出力部を接続するステップを含む、請求項16に記載の方法。
- 前記回路を動作させるステップをさらに含む、請求項17に記載の方法。
- 回路設計図を作り出すステップをさらに含み、前記作り出すステップが、前記デバイスに少なくとも1つの入力部及び少なくとも1つの出力部を接続するステップを含む、請求項15に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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US26652309P | 2009-12-04 | 2009-12-04 | |
US61/266,523 | 2009-12-04 | ||
PCT/US2010/059003 WO2011069140A2 (en) | 2009-12-04 | 2010-12-04 | Semiconductor material doping |
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JP2013513244A JP2013513244A (ja) | 2013-04-18 |
JP5667206B2 true JP5667206B2 (ja) | 2015-02-12 |
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US (1) | US8426225B2 (ja) |
EP (1) | EP2507820B1 (ja) |
JP (1) | JP5667206B2 (ja) |
WO (1) | WO2011069140A2 (ja) |
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US9634183B2 (en) | 2009-12-04 | 2017-04-25 | Sensor Electronic Technology, Inc. | Semiconductor material doping |
US9287442B2 (en) | 2009-12-04 | 2016-03-15 | Sensor Electronic Technology, Inc. | Semiconductor material doping |
US9368580B2 (en) | 2009-12-04 | 2016-06-14 | Sensor Electronic Technology, Inc. | Semiconductor material doping |
TW201230389A (en) * | 2010-10-27 | 2012-07-16 | Univ California | Method for reduction of efficiency droop using an (Al,In,Ga)N/Al(x)In(1-x)N superlattice electron blocking layer in nitride based light emitting diodes |
JP5361925B2 (ja) * | 2011-03-08 | 2013-12-04 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
US10411156B2 (en) | 2011-08-11 | 2019-09-10 | Sensor Electronic Technology, Inc. | Device with transparent and higher conductive regions in lateral cross section of semiconductor layer |
US8787418B2 (en) * | 2011-08-11 | 2014-07-22 | Sensor Electronic Technology, Inc. | Emitting device with compositional and doping inhomogeneities in semiconductor layers |
US9385271B2 (en) | 2011-08-11 | 2016-07-05 | Sensor Electronic Technology, Inc. | Device with transparent and higher conductive regions in lateral cross section of semiconductor layer |
US9595634B2 (en) | 2011-08-11 | 2017-03-14 | Sensor Electronic Technology, Inc. | Device with transparent and higher conductive regions in lateral cross section of semiconductor layer |
US8879598B2 (en) | 2011-08-11 | 2014-11-04 | Sensor Electronic Technology, Inc. | Emitting device with compositional and doping inhomogeneities in semiconductor layers |
WO2013138573A1 (en) * | 2012-03-14 | 2013-09-19 | Sensor Electronic Technology, Inc. | Semiconductor material doping |
US20160005919A1 (en) * | 2013-02-05 | 2016-01-07 | Tokuyama Corporation | Nitride semiconductor light emitting device |
KR102019858B1 (ko) * | 2013-07-18 | 2019-09-09 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
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US9401455B1 (en) | 2015-12-17 | 2016-07-26 | Bolb Inc. | Ultraviolet light-emitting device with lateral tunnel junctions for hole injection |
US10276746B1 (en) | 2017-10-18 | 2019-04-30 | Bolb Inc. | Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same |
EP3699964B1 (en) | 2019-02-22 | 2023-08-23 | Bolb Inc. | Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same |
US10950750B2 (en) | 2019-03-06 | 2021-03-16 | Bolb Inc. | Heterostructure and light-emitting device employing the same |
US11107951B2 (en) * | 2019-03-06 | 2021-08-31 | Bolb Inc. | Heterostructure for light emitting device or photodetector and light-emitting device employing the same |
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CN111668351B (zh) * | 2019-03-06 | 2023-05-12 | 博尔博公司 | 异质结构以及采用异质结构的发光器件 |
US10916680B2 (en) | 2019-03-06 | 2021-02-09 | Bolb Inc. | Heterostructure and light-emitting device employing the same |
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JP2007250991A (ja) * | 2006-03-17 | 2007-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 超格子構造を含む半導体構造および該半導体構造を備える半導体デバイス |
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WO2011069140A3 (en) | 2011-09-29 |
EP2507820B1 (en) | 2016-06-01 |
JP2013513244A (ja) | 2013-04-18 |
US20110138341A1 (en) | 2011-06-09 |
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US8426225B2 (en) | 2013-04-23 |
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