JP5576943B2 - ナノワイヤ構造の光検出器を備えるアクティブピクセルセンサー - Google Patents
ナノワイヤ構造の光検出器を備えるアクティブピクセルセンサー Download PDFInfo
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- JP5576943B2 JP5576943B2 JP2012543250A JP2012543250A JP5576943B2 JP 5576943 B2 JP5576943 B2 JP 5576943B2 JP 2012543250 A JP2012543250 A JP 2012543250A JP 2012543250 A JP2012543250 A JP 2012543250A JP 5576943 B2 JP5576943 B2 JP 5576943B2
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Description
Gate1からの低い負バイアス電圧によってナノワイヤを空乏化させることができるように、直立したナノワイヤがn−、例えば、軽度にドープされたn型もしくは真性半導体と共に形成される。好ましくは、垂直フォトゲートVPGate1からの負バイアス電圧が、図5bに図示されるようなナノワイヤの表面状態に起因する暗電流を抑制するために、ナノワイヤの表面における正孔の蓄積を生じさせることができる。
Claims (26)
- 基板と、
前記基板上に配置され、表面とコアとを有し軸方向が前記基板に対して傾いているナノワイヤを備えるナノワイヤ光検出器と、
前記基板内のアクティブピクセル読み出し回路と、
を備えるデバイス。 - 前記ナノワイヤ光検出器は、光導電体、フォトダイオード、またはフォトゲートを備える請求項1のデバイス。
- 前記ナノワイヤフォトダイオードを囲う少なくとも一つの垂直フォトゲートを更に備える請求項1のデバイス。
- 前記垂直フォトゲートは、前記ナノワイヤの前記表面を電気的に不動態化するよう構成され、暗電流を抑制する請求項3記載のデバイス。
- フォトキャリアの寿命が、不動態化されていないナノワイヤフォトダイオードと比べて増加している請求項4のデバイス。
- 不動態化されていないナノワイヤフォトダイオードと比べて大きな量子効率を有する請求項4のデバイス。
- 前記ナノワイヤは、n型半導体を備える請求項3のデバイス。
- 前記ナノワイヤに適用される負バイアスが前記ナノワイヤ内の電荷キャリアを空乏化させる請求項7のデバイス。
- 前記ナノワイヤは、p型半導体を備える請求項3のデバイス。
- 前記ナノワイヤに適用される正バイアスが前記ナノワイヤ内の電荷キャリアを空乏化させる請求項9のデバイス。
- 前記アクティブピクセル読み出し回路は、3T構成の3つのトランジスタを備える請求項1のデバイス。
- 前記アクティブピクセル読み出し回路は、4T構成の4つのトランジスタを備える請求項1のデバイス。
- 前記ナノワイヤに作動可能に取り付けられたマイクロレンズ結合器を更に備える請求項3のデバイス。
- 前記マイクロレンズ結合器は、球面ボールレンズまたはバイナリレンズである請求項13のデバイス。
- 閾値を超える前記負バイアスの増加は、前記ナノワイヤの前記表面を反転する請求項8のデバイス。
- 閾値を超える前記負バイアスの増加は、前記ナノワイヤの前記表面および前記コアの移動性電荷を空乏化させる請求項10のデバイス。
- 前記フォトゲートと前記ナノワイヤの間に絶縁クラッド層を更に備える請求項3のデバイス。
- 前記絶縁クラッド層の厚みは、前記ナノワイヤの前記軸方向に沿って変化する請求項17のデバイス。
- 基板フォトダイオードを更に備える請求項3のデバイス。
- 前記ナノワイヤは前記基板の第1の面に配置され、前記基板フォトダイオードは前記基板の第2の面に配置される請求項19のデバイス。
- 前記ナノワイヤと前記基板フォトダイオードの両方が前記基板の同じ面に配置される請求項19のデバイス。
- 前記ナノワイヤの前記軸方向は、前記基板に対して略垂直である請求項1のデバイス。
- 基板を備えたピクセルの配列と、前記基板上に配置され、表面とコアとを有し軸方向が前記基板に対して角度をなすナノワイヤを備えるナノワイヤ光検出器と、前記基板内のアクティブピクセル読み出し回路と、を備えるデバイス。
- モノリシックCMOS回路を備える請求項23のデバイス。
- 前記ナノワイヤの前記軸方向は前記基板に対して略垂直である請求項23のデバイス。
- 二つの光検出器の存在が、異なる波長の電磁放射の収集を可能とする請求項23のデバイス。
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US12/633,305 US8299472B2 (en) | 2009-12-08 | 2009-12-08 | Active pixel sensor with nanowire structured photodetectors |
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PCT/US2010/059501 WO2011072032A1 (en) | 2009-12-08 | 2010-12-08 | Active pixel sensor with nanowire structured photodetectors |
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TW201432894A (zh) | 2014-08-16 |
TW201138084A (en) | 2011-11-01 |
US8766272B2 (en) | 2014-07-01 |
TWI427781B (zh) | 2014-02-21 |
US20130009040A1 (en) | 2013-01-10 |
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