JP5548143B2 - Ledチップの製造方法 - Google Patents

Ledチップの製造方法 Download PDF

Info

Publication number
JP5548143B2
JP5548143B2 JP2011012547A JP2011012547A JP5548143B2 JP 5548143 B2 JP5548143 B2 JP 5548143B2 JP 2011012547 A JP2011012547 A JP 2011012547A JP 2011012547 A JP2011012547 A JP 2011012547A JP 5548143 B2 JP5548143 B2 JP 5548143B2
Authority
JP
Japan
Prior art keywords
laser
substrate
led chip
film
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011012547A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012156217A (ja
Inventor
直哉 木山
郁祥 中谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsuboshi Diamond Industrial Co Ltd
Original Assignee
Mitsuboshi Diamond Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuboshi Diamond Industrial Co Ltd filed Critical Mitsuboshi Diamond Industrial Co Ltd
Priority to JP2011012547A priority Critical patent/JP5548143B2/ja
Priority to TW100132143A priority patent/TWI447964B/zh
Priority to CN201110329555.7A priority patent/CN102610711B/zh
Priority to KR1020110139660A priority patent/KR101390115B1/ko
Publication of JP2012156217A publication Critical patent/JP2012156217A/ja
Application granted granted Critical
Publication of JP5548143B2 publication Critical patent/JP5548143B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Led Devices (AREA)
JP2011012547A 2011-01-25 2011-01-25 Ledチップの製造方法 Expired - Fee Related JP5548143B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011012547A JP5548143B2 (ja) 2011-01-25 2011-01-25 Ledチップの製造方法
TW100132143A TWI447964B (zh) 2011-01-25 2011-09-06 LED wafer manufacturing method
CN201110329555.7A CN102610711B (zh) 2011-01-25 2011-10-24 Led芯片的制造方法
KR1020110139660A KR101390115B1 (ko) 2011-01-25 2011-12-22 Led 칩의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011012547A JP5548143B2 (ja) 2011-01-25 2011-01-25 Ledチップの製造方法

Publications (2)

Publication Number Publication Date
JP2012156217A JP2012156217A (ja) 2012-08-16
JP5548143B2 true JP5548143B2 (ja) 2014-07-16

Family

ID=46527963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011012547A Expired - Fee Related JP5548143B2 (ja) 2011-01-25 2011-01-25 Ledチップの製造方法

Country Status (4)

Country Link
JP (1) JP5548143B2 (zh)
KR (1) KR101390115B1 (zh)
CN (1) CN102610711B (zh)
TW (1) TWI447964B (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5658043B2 (ja) * 2011-01-07 2015-01-21 株式会社ディスコ 分割方法
JP2012238746A (ja) * 2011-05-12 2012-12-06 Disco Abrasive Syst Ltd 光デバイスウエーハの分割方法
JP6423135B2 (ja) * 2012-11-29 2018-11-14 三星ダイヤモンド工業株式会社 パターン付き基板の分割方法
TWI483802B (zh) * 2012-12-14 2015-05-11 Ind Tech Res Inst 雷射加工裝置及其方法
CN103934567A (zh) * 2013-01-21 2014-07-23 均豪精密工业股份有限公司 激光加工***及其方法
JP6405556B2 (ja) * 2013-07-31 2018-10-17 リンテック株式会社 保護膜形成フィルム、保護膜形成用シートおよび検査方法
JP6241174B2 (ja) * 2013-09-25 2017-12-06 三星ダイヤモンド工業株式会社 レーザー加工装置、および、パターン付き基板の加工条件設定方法
US9953856B2 (en) 2014-01-22 2018-04-24 Lintec Corporation Protective film-forming film, sheet for forming protective film, complex sheet for forming protective film, and method of producing manufactured product
WO2015111632A1 (ja) * 2014-01-22 2015-07-30 リンテック株式会社 保護膜形成フィルム、保護膜形成用シート、保護膜形成用複合シートおよび検査方法
JP6562014B2 (ja) * 2017-02-20 2019-08-21 日亜化学工業株式会社 発光素子の製造方法
JP6228343B1 (ja) * 2017-06-20 2017-11-08 リンテック株式会社 保護膜形成フィルム、保護膜形成用シートおよび検査方法
JP6401364B2 (ja) * 2017-10-12 2018-10-10 リンテック株式会社 保護膜形成用複合シートおよびレーザー印字方法
JP2018026597A (ja) * 2017-11-16 2018-02-15 ローム株式会社 発光素子および発光素子パッケージ
KR102152007B1 (ko) * 2020-03-18 2020-09-04 주식회사 탑 엔지니어링 기판 절단 방법 및 기판 절단 장치
CN113695748B (zh) * 2021-08-23 2022-10-25 西安交通大学 一种基于空间光调制器的鲨鱼皮表面结构快速制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9511841D0 (en) * 1995-06-10 1995-08-09 Pilkington Glass Ltd Mirrors and their production
JP3439063B2 (ja) * 1997-03-24 2003-08-25 三洋電機株式会社 半導体発光素子および発光ランプ
JP3769872B2 (ja) * 1997-05-06 2006-04-26 ソニー株式会社 半導体発光素子
JP3604550B2 (ja) * 1997-12-16 2004-12-22 日亜化学工業株式会社 窒化物半導体素子の製造方法
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP3895287B2 (ja) * 2003-03-06 2007-03-22 弘明 三澤 サファイア基板の分割方法及び分割装置
JP4279631B2 (ja) * 2003-08-20 2009-06-17 三菱化学株式会社 窒化物系半導体素子の製造方法
JP2005271563A (ja) * 2004-03-26 2005-10-06 Daitron Technology Co Ltd 硬脆材料板体の分割加工方法及び装置

Also Published As

Publication number Publication date
TW201232836A (en) 2012-08-01
KR20120086241A (ko) 2012-08-02
CN102610711B (zh) 2015-04-08
JP2012156217A (ja) 2012-08-16
TWI447964B (zh) 2014-08-01
CN102610711A (zh) 2012-07-25
KR101390115B1 (ko) 2014-04-28

Similar Documents

Publication Publication Date Title
JP5548143B2 (ja) Ledチップの製造方法
US8609512B2 (en) Method for laser singulation of chip scale packages on glass substrates
TWI380867B (zh) Laser processing methods and semiconductor wafers
JP6260601B2 (ja) 半導体素子の製造方法
JP4829781B2 (ja) レーザ加工方法及び半導体チップ
JP4907984B2 (ja) レーザ加工方法及び半導体チップ
JP4781661B2 (ja) レーザ加工方法
TWI415180B (zh) 使用短脈衝之紅外線雷射晶圓刻劃方法
US20070298529A1 (en) Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
KR101887448B1 (ko) 세라믹 기판을 채용한 발광소자 패키지의 절단 방법 및 다층구조의 가공 대상물의 절단방법
JP2006245062A (ja) Iii族窒化物系化合物半導体素子の製造方法及び発光素子
JPWO2005098916A1 (ja) レーザ加工方法及び半導体チップ
JP2006263754A (ja) レーザ加工方法
JP2005286218A (ja) レーザ加工方法及び加工対象物
JP2004031526A (ja) 3族窒化物系化合物半導体素子の製造方法
JP2005109432A (ja) Iii族窒化物系化合物半導体素子の製造方法
WO2003002289A1 (en) Multistep laser processing of wafers supporting surface device layers
JP2018120986A (ja) 発光素子の製造方法
JP2005012203A (ja) レーザ加工方法
JP2003151921A (ja) 化合物半導体とその製造方法
KR102069724B1 (ko) 레이저 다이오드 및 레이저 다이오드 유닛용 서브마운트를 제조하기 위한 레이저 삭마 방법
JP2004055816A (ja) 窒化物化合物半導体発光素子及びその製造方法
US10211367B2 (en) Light emitting diode and fabrication method thereof
JP7277782B2 (ja) 半導体素子の製造方法
JP6562014B2 (ja) 発光素子の製造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110826

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130402

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130404

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20131203

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140110

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20140203

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140430

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140516

R150 Certificate of patent or registration of utility model

Ref document number: 5548143

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees