JP5544715B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP5544715B2
JP5544715B2 JP2008530957A JP2008530957A JP5544715B2 JP 5544715 B2 JP5544715 B2 JP 5544715B2 JP 2008530957 A JP2008530957 A JP 2008530957A JP 2008530957 A JP2008530957 A JP 2008530957A JP 5544715 B2 JP5544715 B2 JP 5544715B2
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Japan
Prior art keywords
gate electrode
substrate
semiconductor layer
gate electrodes
semiconductor
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Expired - Fee Related
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JP2008530957A
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English (en)
Japanese (ja)
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JPWO2008023776A1 (ja
Inventor
潔 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
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NEC Corp
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Publication date
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Priority to JP2008530957A priority Critical patent/JP5544715B2/ja
Publication of JPWO2008023776A1 publication Critical patent/JPWO2008023776A1/ja
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Publication of JP5544715B2 publication Critical patent/JP5544715B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008530957A 2006-08-23 2007-08-23 半導体装置及びその製造方法 Expired - Fee Related JP5544715B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008530957A JP5544715B2 (ja) 2006-08-23 2007-08-23 半導体装置及びその製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006226821 2006-08-23
JP2006226821 2006-08-23
PCT/JP2007/066397 WO2008023776A1 (fr) 2006-08-23 2007-08-23 Dispositif à semi-conducteur et son procédé de fabrication
JP2008530957A JP5544715B2 (ja) 2006-08-23 2007-08-23 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPWO2008023776A1 JPWO2008023776A1 (ja) 2010-01-14
JP5544715B2 true JP5544715B2 (ja) 2014-07-09

Family

ID=39106859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008530957A Expired - Fee Related JP5544715B2 (ja) 2006-08-23 2007-08-23 半導体装置及びその製造方法

Country Status (2)

Country Link
JP (1) JP5544715B2 (fr)
WO (1) WO2008023776A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11728403B2 (en) 2018-01-30 2023-08-15 Sony Semiconductor Solutions Corporation Semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102196949B1 (ko) * 2013-03-29 2020-12-30 엘지디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터 제조 방법 및 박막 트랜지스터를 포함하는 표시 장치
TWI709791B (zh) * 2016-07-07 2020-11-11 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
US20190273168A1 (en) * 2016-09-20 2019-09-05 Sharp Kabushiki Kaisha Semiconductor device and display device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63102264A (ja) * 1986-10-20 1988-05-07 Nissan Motor Co Ltd 薄膜半導体装置
JPH0465868A (ja) * 1990-07-06 1992-03-02 Kawasaki Steel Corp Ｍｏｓ形トランジスタ
JPH0548108A (ja) * 1991-08-08 1993-02-26 Fujitsu Ltd 半導体装置およびその製造方法
JPH06216257A (ja) * 1993-01-13 1994-08-05 Sony Corp 多層配線構造の半導体装置
JPH06291269A (ja) * 1993-04-06 1994-10-18 Sony Corp 電界効果トランジスタ
JP2003008008A (ja) * 2001-06-22 2003-01-10 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法
JP2003324200A (ja) * 2002-05-02 2003-11-14 Tokyo Inst Of Technol 電界効果トランジスタ及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63102264A (ja) * 1986-10-20 1988-05-07 Nissan Motor Co Ltd 薄膜半導体装置
JPH0465868A (ja) * 1990-07-06 1992-03-02 Kawasaki Steel Corp Ｍｏｓ形トランジスタ
JPH0548108A (ja) * 1991-08-08 1993-02-26 Fujitsu Ltd 半導体装置およびその製造方法
JPH06216257A (ja) * 1993-01-13 1994-08-05 Sony Corp 多層配線構造の半導体装置
JPH06291269A (ja) * 1993-04-06 1994-10-18 Sony Corp 電界効果トランジスタ
JP2003008008A (ja) * 2001-06-22 2003-01-10 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置およびその製造方法
JP2003324200A (ja) * 2002-05-02 2003-11-14 Tokyo Inst Of Technol 電界効果トランジスタ及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11728403B2 (en) 2018-01-30 2023-08-15 Sony Semiconductor Solutions Corporation Semiconductor device
KR102663340B1 (ko) * 2018-01-30 2024-05-07 소니 세미컨덕터 솔루션즈 가부시키가이샤 반도체 장치

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JPWO2008023776A1 (ja) 2010-01-14
WO2008023776A1 (fr) 2008-02-28

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