JP5536340B2 - ゲートの頂部が拡張された半導体トランジスタ - Google Patents
ゲートの頂部が拡張された半導体トランジスタ Download PDFInfo
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- JP5536340B2 JP5536340B2 JP2008550519A JP2008550519A JP5536340B2 JP 5536340 B2 JP5536340 B2 JP 5536340B2 JP 2008550519 A JP2008550519 A JP 2008550519A JP 2008550519 A JP2008550519 A JP 2008550519A JP 5536340 B2 JP5536340 B2 JP 5536340B2
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- 239000004065 semiconductor Substances 0.000 title claims description 52
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 44
- 238000004519 manufacturing process Methods 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 37
- 229910052759 nickel Inorganic materials 0.000 claims description 22
- 229910021332 silicide Inorganic materials 0.000 claims description 19
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 19
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 36
- 235000012239 silicon dioxide Nutrition 0.000 description 24
- 239000000377 silicon dioxide Substances 0.000 description 24
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 22
- 239000000758 substrate Substances 0.000 description 15
- 238000002513 implantation Methods 0.000 description 13
- 125000006850 spacer group Chemical group 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 238000001459 lithography Methods 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- TWRSDLOICOIGRH-UHFFFAOYSA-N [Si].[Si].[Hf] Chemical compound [Si].[Si].[Hf] TWRSDLOICOIGRH-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- -1 germanium ions Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
Claims (4)
- 半導体構造体の製造方法であって、
(a)チャネル領域、第1のソース/ドレイン領域、および第2のソース/ドレイン領域を含み、前記チャネル領域が前記第1のソース/ドレイン領域と前記第2のソース/ドレイン領域との間に配置された半導体領域と、
(b)前記チャネル領域と直接物理的に接触しているゲート誘電体領域と、
(c)頂部および底部を含むゲート電極領域と、
(d)前記ゲート電極領域の側壁上に前記頂部の少なくとも一部の側面を露出させるように設けられた誘電体キャップ領域と、
を含む半導体構造体であって、
前記底部が前記頂部と前記ゲート誘電体領域との間に配置されており、
前記底部が前記ゲート誘電体領域と直接物理的に接触しており、
前記ゲート電極領域の前記頂部ならびに前記第1および第2のソース/ドレイン領域がシリコンを含み、
前記ゲート電極領域が前記ゲート誘電体領域によって前記チャネル領域から電気的に絶縁されている半導体構造体を提供するステップと、
前記ゲート電極領域の前記頂部を横方向に拡張して前記頂部の第1の幅が前記底部の第2の幅より大きくなるように前記ゲート電極領域の前記露出した側面を有する頂部に室温下でGe原子またはAs原子を注入するステップと、
を含む、方法。 - 前記Ge原子またはAs原子を注入する前記ステップが、25KeVのエネルギーで実行される、請求項1に記載の方法。
- 前記Ge原子またはAs原子を注入する前記ステップが実行された後、前記ゲート電極領域の前記頂部中ならびに前記第1のソース/ドレイン領域および前記第2のソース/ドレイン領域上にシリサイド領域を形成するステップをさらに含む、請求項1に記載の方法。
- 前記シリサイド領域を形成する前記ステップが、
前記構造体の上にニッケルを被着させるステップと、
前記ニッケルが、前記ゲート電極領域の前記頂部ならびに前記第1および第2のソース/ドレイン領域のシリコンと化学的に反応して前記シリサイド領域を形成するように前記構造体をアニールするステップと、
を含む、請求項3記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/275,514 | 2006-01-11 | ||
US11/275,514 US7473593B2 (en) | 2006-01-11 | 2006-01-11 | Semiconductor transistors with expanded top portions of gates |
PCT/US2007/060390 WO2007082266A2 (en) | 2006-01-11 | 2007-01-11 | Semiconductor transistors with expanded top portions of gates |
Publications (2)
Publication Number | Publication Date |
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JP2009523326A JP2009523326A (ja) | 2009-06-18 |
JP5536340B2 true JP5536340B2 (ja) | 2014-07-02 |
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EP (1) | EP1977446A4 (ja) |
JP (1) | JP5536340B2 (ja) |
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JP6604596B2 (ja) * | 2014-09-26 | 2019-11-13 | インテル・コーポレーション | 半導体デバイス用の選択的ゲートスペーサ |
US10262870B2 (en) * | 2015-07-02 | 2019-04-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor (FinFET) device structure and method for forming the same |
US10269651B2 (en) | 2015-07-02 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor (FinFET) device structure and method for forming the same |
US9425313B1 (en) * | 2015-07-07 | 2016-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9748358B2 (en) | 2015-12-18 | 2017-08-29 | International Business Machines Corporation | Gap fill of metal stack in replacement gate process |
US9929250B1 (en) | 2016-09-27 | 2018-03-27 | International Business Machines Corporation | Semiconductor device including optimized gate stack profile |
CN108573869B (zh) * | 2017-03-07 | 2021-08-06 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管及其形成方法 |
JP2018157206A (ja) * | 2017-03-17 | 2018-10-04 | 株式会社リコー | 電界効果型トランジスタ及びその製造方法、表示素子、表示装置、システム |
US10276680B2 (en) * | 2017-07-18 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate feature in FinFET device |
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EP1977446A2 (en) | 2008-10-08 |
JP2009523326A (ja) | 2009-06-18 |
CN101361178B (zh) | 2013-11-13 |
TWI404210B (zh) | 2013-08-01 |
US7473593B2 (en) | 2009-01-06 |
TW200746425A (en) | 2007-12-16 |
US8466503B2 (en) | 2013-06-18 |
US20070158763A1 (en) | 2007-07-12 |
CN101361178A (zh) | 2009-02-04 |
US20130230960A1 (en) | 2013-09-05 |
WO2007082266A2 (en) | 2007-07-19 |
WO2007082266A3 (en) | 2007-12-06 |
US20080296707A1 (en) | 2008-12-04 |
EP1977446A4 (en) | 2009-09-23 |
US8753929B2 (en) | 2014-06-17 |
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