CN103199104B - 一种晶圆结构以及应用其的功率器件 - Google Patents

一种晶圆结构以及应用其的功率器件 Download PDF

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CN103199104B
CN103199104B CN201310069766.0A CN201310069766A CN103199104B CN 103199104 B CN103199104 B CN 103199104B CN 201310069766 A CN201310069766 A CN 201310069766A CN 103199104 B CN103199104 B CN 103199104B
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CN103199104A (zh
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廖忠平
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Hangzhou Xinmai Semiconductor Technology Co ltd
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Hangzhou Silergy Semiconductor Technology Ltd
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Abstract

本发明提供了一种晶圆结构以及应用其的功率器件，其中所述晶圆结构包括高浓度掺杂的第一掺杂层；依次位于所述第一掺杂层上的第二掺杂层和第三掺杂层；其中，所述第三掺杂层的掺杂浓度小于所述第二掺杂层或为本征掺杂。依据本发明的实施例不仅可以提高功率器件的耐压，同时击穿电压的稳定性也得到了较大的改善，并具有更强的工艺容差能力和更高的终端可靠性。

Description

一种晶圆结构以及应用其的功率器件
技术领域
本发明涉及半导体功率器件技术领域，更具体的说，是关于一种晶圆结构以及应用其的功率器件。
背景技术
在功率器件制造工艺中，一般采用的晶圆结构为：在原始的低阻半导体衬底上向外延伸一层高阻层，即外延层，用来耐受高压，低阻衬底作为支撑而不增加更多的电阻。图1（a）所示为现有技术中通常采用的晶圆结构的示意图，其中1'为半导体衬底，2'为单一层次、均匀掺杂的外延层，而图1（b）所示为对应的外延层2'掺杂浓度示意图，其中横坐标C表示掺杂浓度的大小，纵坐标Y表示纵向深度。但是这种外延结构难以提高器件的终端耐压参数（BV）。
参考图2，所示为图1所示的晶圆结构应用在采用沟槽填充工艺制造的纵向超结金属氧化物场效应晶体管（SuperJunctionMOSFET）的结构示意图。由于外延结构在工艺过程中形成的表面场氧化层的作用，易于使外延层2中N型杂质积聚在表面，因此在刻蚀的沟槽中填充P型硅形成的P柱4在制造的过程中，其表面部分的P型杂质被中和，从而形成了向内聚拢的结构6，这种聚拢的结构使得SJMOS的终端在表面处不易耗尽，导致了其击穿电压偏低。
参考图3，所示为图1所示的晶圆结构应用在普通的垂直双扩散金属氧化物半导体场效应晶体管（VDMOS）终端中的结构示意图，其中7为VDMOS的P型体区，8为耗尽层边界，其构成的终端结构难以承受高压，即耐压系数较低，并且终端设计较为困难。
发明内容
有鉴于现有技术的上述缺陷，本发明的目的在于提供一种晶圆结构以及应用其的功率器件，以克服现有技术中的功率器件耐压不高的问题。
为实现上述目的，本发明提供如下技术方案：
依据本发明一实施例的一种晶圆结构，包括：
高浓度掺杂的第一掺杂层；
依次位于所述第一掺杂层上的第二掺杂层和第三掺杂层；其中，所述第三掺杂层的掺杂浓度小于所述第二掺杂层或为本征掺杂。
优选的，所述第二掺杂层的掺杂浓度为均匀分布或梯度分布。
优选的，所述第二掺杂层的杂质类型与所述第一掺杂层的杂质类型相同或相反。
优选的，所述第二掺杂层和第三掺杂层在所述第一掺杂层上依次外延生长形成。
依据本发明一实施例的一种功率器件，包括依据本发明的任一晶圆结构。
优选的，所述功率器件为金属氧化层半导体场效晶体管（MOSFET）、绝缘栅双极型晶体管（IGBT）或二极管。
优选的，所述金属氧化层半导体场效晶体管（MOSFET）为纵向超结金属氧化物场效应晶体管或垂直双扩散金属氧化物半导体场效应晶体管。
优选的，所述纵向超结金属氧化物场效应晶体管由沟槽填充工艺制造。
经由上述的技术方案可知，与现有技术相比，本发明提供了一种新的晶圆结构，其中掺杂浓度较高的第一掺杂层作为衬底结构，位于第一掺杂层上的第二掺杂层具有一定的掺杂浓度，而最上方的第三掺杂层为本征材质，这样由第二掺杂层和第三掺杂层作为双层的外延结构应用在功率器件中。依据本发明的实施例不仅可以提高功率器件的耐压，同时击穿电压的稳定性也得到了较大的改善，并具有更强的工艺容差能力和更高的终端可靠性。通过下文优选实施例的具体描述，本发明的上述和其他优点更显而易见。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。
图1所示为现有晶圆结构中的外延结构和掺杂浓度分布的示意图；
图2所示为现有的晶圆结构应用在纵向超结金属氧化物场效应晶体管的结构示意图。
图3所示为现有的晶圆结构应用在垂直双扩散金属氧化物半导体场效应晶体管中的结构示意图。
图4所示为依据本发明的晶圆结构及其掺杂浓度分布的示意图；
图5所示为依据本发明的晶圆结构应用在纵向超结金属氧化物场效应晶体管的结构示意图；
图6所示为依据本发明的晶圆结构应用在垂直双扩散金属氧化物半导体场效应晶体管的结构示意图；
图7所示为图6中VDMOS结构沿AA'方向的剖面图。
图中标号说明：1——第一掺杂层；2——第二掺杂层；3——第三掺杂层；4——P柱；5——碗状结构；6——聚拢结构；7——P型体区；8——耗尽层边界。
具体实施方式
以下结合附图对本发明的几个优选实施例进行详细描述，但本发明并不仅仅限于这些实施例。本发明涵盖任何在本发明的精髓和范围上做的替代、修改、等效方法以及方案。为了使公众对本发明有彻底的了解，在以下本发明优选实施例中详细说明了具体的细节，而对本领域技术人员来说没有这些细节的描述也可以完全理解本发明。
图4中所示的依据本发明的晶圆结构，其包括第一掺杂层1以及依次位于其上的第二掺杂层2和第三掺杂层3；其中所述第一掺杂层1为高浓度掺杂，所述第二掺杂层2具有一定的掺杂杂质，但一般为低浓度掺杂，而所述第三掺杂层的掺杂浓度低于所述第二掺杂层或为没有掺杂杂质的本征材质。其中所述第二掺杂层2中掺杂浓度可以如图4（a）中所示的均匀分布，也可以采用图4（b）中的掺杂浓度连续梯度变化。通常，所述第二掺杂层2的厚度一般要大于所述第三掺杂层3。
所述第二掺杂层2的杂质类型可以与所述第一掺杂层1的杂质类型相同或相反，例如图4中所示的，当所述第二掺杂层2的掺杂类型为N-掺杂时，对应的所述第一掺杂层1可以为N+掺杂或P+掺杂，由功率器件制造过程中的具体要求而定。
在实际应用中，一般可将第一掺杂层1作为半导体衬底，所述第二掺杂层2和第三掺杂层3作为外延层在其上方依次外延生长形成，他们的基础材质保持一致，如比较常用的半导体衬底材料为重掺杂砷或磷的硅材料，而第二掺杂层为轻掺杂磷的硅外延，第三掺杂层为本征掺杂硅外延。
本发明提供一种功率器件，其包括依据本发明实现的任一晶圆结构，并在所述晶圆结构中形成其有源区域。这样的功率器件优选为金属氧化层半导体场效晶体管（MOSFET）、绝缘栅双极型晶体管（IGBT），也可以是二极管。
下面以纵向超结金属氧化物场效应晶体管（SuperJunctionMOSFET）和垂直双扩散金属氧化物半导体场效应晶体管（VDMOS）为例对依据本发明的功率器件的结构和优点进行具体说明，其中所述第三掺杂层为本征掺杂。
参考图5，所示为依据本发明的晶圆结构应用在纵向超结MOS管的结构示意图；其中第一掺杂层1为N型重掺杂的硅衬底，第二掺杂层2为N型轻掺杂，其掺杂浓度为均匀分布，所述超结MOS管由沟槽填充工艺制造，在蚀刻形成的沟槽中填充P型硅形成的P柱结构4，继而形成氧化层（FieldOxide）和金属层（Metal），由于第三掺杂层3的区域没有掺杂杂质，因此P型硅在第三掺杂层3部分由于制造过程中的高温扩散会形成碗状结构5，从而使得超结MOS管的终端结构表面容易耗尽，提高了击穿电压，而且采用这种晶圆结构的功率器件具有更强的工艺容差能力和更高的终端可靠性。
参考图6，所示为依据本发明的晶圆结构应用在VDMOS的结构示意图，其中71为P型体区形成的等位环，72为浮空环结构。第三掺杂层3在承受高压时，其耗尽层将在表层拓展，因此耗尽层边界8的曲率将发生变化，在第三掺杂层3中耗尽层曲率降低也将降低PN结的临界电场，从而提高了功率器件的击穿电压。
另一方面可以从器件的纵向耐压上分析：参考图7所示的图6结构中沿AA'方向的剖面图，可以看出图6中终端的浮空环和晶圆结构形成了PIN-N+结构，由于本征掺杂的存在，因此浮空环71部分的击穿电压得到了提升，因此终端的纵向耐压进一步得到提高。
同样的，依据本发明的外延结构同样也适用于二极管器件，其结构与原理与图6所示的VDMOS结构相似，在此不再赘述。
另外，还需要说明的是，在本文中，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
依照本发明的实施例如上文所述，这些实施例并没有详尽叙述所有的细节，也不限制该发明仅为所述的具体实施例。显然，根据以上描述，可作很多的修改和变化。本说明书选取并具体描述这些实施例，是为了更好地解释本发明的原理和实际应用，从而使所属技术领域技术人员能很好地利用本发明以及在本发明基础上的修改使用。本发明仅受权利要求书及其全部范围和等效物的限制。

Claims (7)

1.一种功率器件，其特征在于，包括：
高浓度掺杂的第一掺杂层；
位于所述第一掺杂层上的第二掺杂层、位于所述第二掺杂层之上的第三掺杂层,其中，所述第三掺杂层为掺杂浓度小于所述第二掺杂层的掺杂层或者为没有掺杂杂质的本征层；
所述第三掺杂层中的耗尽层在表层拓展，且所述第二掺杂层的厚度大于所述第三掺杂层的厚度；
所述功率器件的有源区形成于由所述第一掺杂层、第二掺杂层和第三掺杂层构成的晶圆结构中，
所述第二掺杂层和第三掺杂层作为所述晶圆结构的外延层。
2.根据权利要求1所述的功率器件，其特征在于，所述第二掺杂层的掺杂浓度为均匀分布或梯度分布。
3.根据权利要求1所述的功率器件，其特征在于，所述第二掺杂层的杂质类型与所述第一掺杂层的杂质类型相同或相反。
4.根据权利要求1所述的功率器件，其特征在于，所述第二掺杂层和第三掺杂层在所述第一掺杂层上依次外延生长形成。
5.根据权利要求1-4中任意一所述的功率器件，其特征在于，所述功率器件为金属氧化层半导体场效晶体管(MOSFET)、绝缘栅双极型晶体管(IGBT)或二极管。
6.根据权利要求5所述的功率器件，其特征在于，所述金属氧化层半导体场效晶体管(MOSFET)为纵向超结金属氧化物场效应晶体管或垂直双扩散金属氧化物半导体场效应晶体管。
7.根据权利要求6所述的功率器件，其特征在于，所述纵向超结金属氧化物场效应晶体管由沟槽填充工艺制造。
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