JP5480158B2 - ハイブリッド上部反射器を備える側面放射装置 - Google Patents
ハイブリッド上部反射器を備える側面放射装置 Download PDFInfo
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- JP5480158B2 JP5480158B2 JP2010537570A JP2010537570A JP5480158B2 JP 5480158 B2 JP5480158 B2 JP 5480158B2 JP 2010537570 A JP2010537570 A JP 2010537570A JP 2010537570 A JP2010537570 A JP 2010537570A JP 5480158 B2 JP5480158 B2 JP 5480158B2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004964 aerogel Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Description
Claims (6)
- 基板に配設され、散乱反射器に面する少なくとも1つの発光ダイオードを有し、前記散乱反射器が、前記基板から或る距離をおいて配置され、前記基板の延在部に沿って延在し、前記基板と前記散乱反射器との間に透過性固体材料が配設される側面放射発光装置であって、
前記散乱反射器が、前記基板に面する散乱層と、前記散乱層の上に配設される反射層とを有し、前記散乱層が、前記基板に面する粗面を呈し、前記透過性固体材料の屈折率と異なる屈折率を呈し、前記粗面が、前記透過性固体材料を所望の厚さまで研削する際に形成され、前記散乱層が、研削された前記透過性固体材料に前記反射層を接着する接着剤から成る側面放射発光装置。 - 前記散乱層が、前記透過性固体材料の屈折率より低い屈折率を持つ請求項1に記載の発光装置。
- 前記散乱層が、前記透過性固体材料の屈折率より高い屈折率を持つ請求項1に記載の発光装置。
- 前記透過性固体材料が波長変換材料を有する請求項1乃至3のいずれか一項に記載の発光装置。
- 前記反射層が、前記散乱層に面する鏡面を有する請求項1乃至4のいずれか一項に記載の発光装置。
- 前記散乱反射器が、前記基板に対して平行に配設される請求項1乃至5のいずれか一項に記載の発光装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07122848 | 2007-12-11 | ||
EP07122848.0 | 2007-12-11 | ||
PCT/IB2008/055144 WO2009074944A1 (en) | 2007-12-11 | 2008-12-08 | Side emitting device with hybrid top reflector |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011507256A JP2011507256A (ja) | 2011-03-03 |
JP5480158B2 true JP5480158B2 (ja) | 2014-04-23 |
Family
ID=40428175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010537570A Active JP5480158B2 (ja) | 2007-12-11 | 2008-12-08 | ハイブリッド上部反射器を備える側面放射装置 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2223353B8 (ja) |
JP (1) | JP5480158B2 (ja) |
KR (1) | KR101587573B1 (ja) |
CN (1) | CN101897039B (ja) |
TW (1) | TWI476945B (ja) |
WO (1) | WO2009074944A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2323184A1 (en) * | 2009-11-13 | 2011-05-18 | Koninklijke Philips Electronics N.V. | LED assembly |
JP2011139044A (ja) * | 2009-12-01 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 発光素子、発光装置、電子機器、および照明装置 |
US8884330B2 (en) * | 2011-04-13 | 2014-11-11 | Osram Sylvania Inc. | LED wavelength-converting structure including a thin film structure |
DE102012101663B4 (de) * | 2012-02-29 | 2019-12-24 | Osram Opto Semiconductors Gmbh | Konversionselement, Leuchtmittel und Verfahren zur Herstellung eines Konversionselements |
CN104009165B (zh) * | 2013-02-26 | 2016-06-08 | 国家电网公司 | 一种有机电致发光器件的制备方法 |
WO2015060687A1 (ko) * | 2013-10-25 | 2015-04-30 | 주식회사 세미콘라이트 | 반도체 발광다이오드 |
EP3198659B1 (en) * | 2014-09-23 | 2021-08-18 | Lumileds LLC | Luminance pattern shaping using a back-emitting led and a reflective substrate |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6630691B1 (en) * | 1999-09-27 | 2003-10-07 | Lumileds Lighting U.S., Llc | Light emitting diode device comprising a luminescent substrate that performs phosphor conversion |
JP2005191219A (ja) * | 2003-12-25 | 2005-07-14 | Sanken Electric Co Ltd | 半導体発光素子およびその製造方法 |
JP3881653B2 (ja) * | 2003-12-25 | 2007-02-14 | 京セラ株式会社 | 発光装置 |
KR100638666B1 (ko) * | 2005-01-03 | 2006-10-30 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
JP2006253298A (ja) * | 2005-03-09 | 2006-09-21 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
KR100593933B1 (ko) * | 2005-03-18 | 2006-06-30 | 삼성전기주식회사 | 산란 영역을 갖는 측면 방출형 발광다이오드 패키지 및이를 포함하는 백라이트 장치 |
US7759690B2 (en) * | 2005-07-04 | 2010-07-20 | Showa Denko K.K. | Gallium nitride-based compound semiconductor light-emitting device |
JP4961887B2 (ja) * | 2005-09-07 | 2012-06-27 | 豊田合成株式会社 | 固体素子デバイス |
US7293908B2 (en) * | 2005-10-18 | 2007-11-13 | Goldeneye, Inc. | Side emitting illumination systems incorporating light emitting diodes |
US7375379B2 (en) * | 2005-12-19 | 2008-05-20 | Philips Limileds Lighting Company, Llc | Light-emitting device |
KR100867519B1 (ko) * | 2006-02-02 | 2008-11-07 | 삼성전기주식회사 | 발광 다이오드 모듈 |
DE102007002416A1 (de) * | 2006-04-13 | 2007-10-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers |
WO2007121486A2 (en) * | 2006-04-18 | 2007-10-25 | Lamina Lighting, Inc. | Optical devices for controlled color mixing |
-
2008
- 2008-12-08 KR KR1020107015267A patent/KR101587573B1/ko active IP Right Grant
- 2008-12-08 EP EP08860229.7A patent/EP2223353B8/en active Active
- 2008-12-08 JP JP2010537570A patent/JP5480158B2/ja active Active
- 2008-12-08 CN CN2008801200578A patent/CN101897039B/zh active Active
- 2008-12-08 WO PCT/IB2008/055144 patent/WO2009074944A1/en active Application Filing
- 2008-12-08 TW TW097147704A patent/TWI476945B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN101897039A (zh) | 2010-11-24 |
TWI476945B (zh) | 2015-03-11 |
JP2011507256A (ja) | 2011-03-03 |
KR101587573B1 (ko) | 2016-01-25 |
CN101897039B (zh) | 2012-10-03 |
EP2223353B1 (en) | 2018-02-21 |
KR20100089113A (ko) | 2010-08-11 |
EP2223353B8 (en) | 2018-08-29 |
TW200941770A (en) | 2009-10-01 |
WO2009074944A1 (en) | 2009-06-18 |
EP2223353A1 (en) | 2010-09-01 |
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