JP5473962B2 - パターン形成方法及び半導体装置の製造方法 - Google Patents
パターン形成方法及び半導体装置の製造方法 Download PDFInfo
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- JP5473962B2 JP5473962B2 JP2011035594A JP2011035594A JP5473962B2 JP 5473962 B2 JP5473962 B2 JP 5473962B2 JP 2011035594 A JP2011035594 A JP 2011035594A JP 2011035594 A JP2011035594 A JP 2011035594A JP 5473962 B2 JP5473962 B2 JP 5473962B2
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- 238000000034 method Methods 0.000 title claims description 74
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000007789 gas Substances 0.000 claims description 177
- 238000012545 processing Methods 0.000 claims description 146
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 109
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 108
- 239000000758 substrate Substances 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 41
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 31
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 21
- 229910000077 silane Inorganic materials 0.000 claims description 21
- 238000005259 measurement Methods 0.000 claims description 9
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 7
- 230000007261 regionalization Effects 0.000 claims description 5
- 238000009966 trimming Methods 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 188
- 238000012546 transfer Methods 0.000 description 102
- 230000005284 excitation Effects 0.000 description 46
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 34
- 229910052814 silicon oxide Inorganic materials 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 229910052786 argon Inorganic materials 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 229910001873 dinitrogen Inorganic materials 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 12
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
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- 150000002431 hydrogen Chemical class 0.000 description 1
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- 238000007689 inspection Methods 0.000 description 1
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/3105—After-treatment
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- Plasma & Fusion (AREA)
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- Formation Of Insulating Films (AREA)
Description
11 第1の処理部
12 第2の処理部
20 塗布現像処理装置
21 露光装置
202 エッチング装置
203 プラズマ成膜装置
204 エッチング装置
205 アッシング装置
242 ラジアルラインスロットアンテナ
260 原料ガス供給構造体
263 原料ガス供給口
270 第1のプラズマ励起用ガス供給口
280 プラズマ励起用ガス供給構造体
282 第2のプラズマ励起用ガス供給口
290 排気口
300 制御装置
400 被処理膜
401 反射防止膜
402 レジストパターン
403 反射防止膜パターン
404 シリコン窒化膜
405 シリコン窒化膜パターン
500 寸法測定装置
510 エッチング装置
520 被処理膜のパターン
R1 プラズマ生成領域
R2 原料ガス解離領域
W ウェハ
Claims (10)
- 基板上の被処理膜をエッチングする際のマスクとなる所定のパターンを形成するパターン形成方法であって、
基板の被処理膜上に有機膜のパターンを形成する有機膜パターン形成工程と、
その後、CVDにより前記有機膜のパターン上にシリコン窒化膜を成膜する成膜工程と、
その後、前記シリコン窒化膜が前記有機膜のパターンの側壁部にのみ残るように当該シリコン窒化膜をエッチングした後、前記有機膜のパターンを除去し、基板の被処理膜上に前記シリコン窒化膜の前記所定のパターンを形成するシリコン窒化膜パターン形成工程と、を有し、
前記成膜工程は、
基板の温度を100℃以下に維持した状態で、処理ガスを励起させてプラズマを生成し、当該プラズマによるプラズマ処理を行って、100MPa以下の膜ストレスを有するシリコン窒化膜を形成することを特徴とする、パターン形成方法。 - 前記処理ガスは、シランガス、窒素原子を有するガス及び水素ガスを含み、
前記成膜工程では、前記水素ガスの供給流量を制御して、前記シリコン窒化膜の膜ストレスを制御することを特徴とする、請求項1に記載のパターン形成方法。 - 前記処理ガスは、シランガス、及び窒素原子を有するガスを含み、
前記成膜工程では、前記シランガスの供給流量と前記窒素原子を有するガスの供給流量との比率を制御して、前記シリコン窒化膜の膜ストレスを制御することを特徴とする、請求項1に記載のパターン形成方法。 - 前記成膜工程において、処理雰囲気は20Pa〜40Paに維持されていることを特徴とする、請求項1〜3のいずれかに記載のパターン形成方法。
- 前記成膜工程において、前記プラズマは、マイクロ波によって前記処理ガスが励起されて生成されることを特徴とする、請求項1〜4のいずれかに記載のパターン形成方法。
- 前記シリコン窒化膜パターン形成工程後、前記シリコン窒化膜のパターンの寸法を測定し、当該測定結果に基づいて、前記成膜工程の処理条件を補正することを特徴とする、請求項1〜5のいずれかに記載のパターン形成方法。
- 前記有機膜パターン形成工程後、前記有機膜のパターンの寸法を測定し、当該測定結果に基づいて、前記有機膜パターン形成工程の処理条件を補正することを特徴とする、請求項1〜5のいずれかに記載のパターン形成方法。
- 前記有機膜パターン形成工程において、
基板にフォトリソグラフィー処理を行い、当該基板の被処理膜上にレジストパターンを形成し、
その後、前記レジストパターンをトリミングすると共に、当該レジストパターンの下層の反射防止膜をエッチングし、前記有機膜のパターンとして前記レジストパターン及び前記反射防止膜のパターンを形成することを特徴とする、請求項1〜7のいずれかに記載のパターン形成方法。 - 前記有機パターン形成工程において、
基板にフォトリソグラフィー処理を行い、当該基板の被処理膜上にレジストパターンを形成し、
その後、前記レジストパターンをトリミングすると共に、当該レジストパターンの下層の反射防止膜をエッチングし、
その後、前記レジストパターンを除去し、前記有機膜のパターンとして前記反射防止膜のパターンを形成することを特徴とする、請求項1〜7のいずれかに記載のパターン形成方法。 - 請求項1〜9のいずれかに記載のパターン形成方法を行って基板の被処理膜上に前記シリコン窒化膜のパターンを形成した後、
前記シリコン窒化膜のパターンをマスクとして基板上の被処理膜をエッチングして、半導体装置を製造することを特徴とする、半導体装置の製造方法。
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