JP5457762B2 - 回路装置及びその製造方法 - Google Patents
回路装置及びその製造方法 Download PDFInfo
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- JP5457762B2 JP5457762B2 JP2009199925A JP2009199925A JP5457762B2 JP 5457762 B2 JP5457762 B2 JP 5457762B2 JP 2009199925 A JP2009199925 A JP 2009199925A JP 2009199925 A JP2009199925 A JP 2009199925A JP 5457762 B2 JP5457762 B2 JP 5457762B2
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- Prior art keywords
- resin
- circuit board
- circuit
- package
- cavity
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229920005989 resin Polymers 0.000 claims description 137
- 239000011347 resin Substances 0.000 claims description 137
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 238000000465 moulding Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 8
- 229910001111 Fine metal Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 235000014443 Pyrus communis Nutrition 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
2 樹脂パッケージ
10 溝
15 回路基板
31 リードフレーム
37 ゲート部
38 エアベント部
39 突出部
Claims (4)
- 導電パターン及び前記導電パターンに固着された回路素子を有する混成集積回路が上面に組み込まれた矩形形状の回路基板と、
前記導電パターン上に固着され、一対の前記回路基板の長手方向に沿ってそれぞれ配置された複数のリードと、
前記回路基板を被覆する樹脂パッケージとを有し、
少なくとも前記リードが導出する前記樹脂パッケージの一方の側面には、前記リード間に樹脂注入ゲート部が配置される隙間を有し、前記隙間は前記一方の側面の中央領域に配置され、
前記樹脂パッケージは、前記回路基板を完全に被覆するパッケージであり、前記樹脂パッケージの表面側には、前記樹脂注入ゲート部側に前記一方の側面に沿って溝が形成されることを特徴とする回路装置。 - 前記回路素子は、前記溝から前記リードが導出する他方の側面の間の前記回路基板上に配置されることを特徴とする請求項1に記載の回路装置。
- 導電パターン及び前記導電パターンに固着された回路素子を有する混成集積回路が上面に組み込まれた矩形形状の回路基板を樹脂封止金型のキャビティ内に収納し、前記回路基板を樹脂モールドすることで樹脂パッケージを形成する回路装置の製造方法において、
一対の前記回路基板の長手方向に沿ってそれぞれ前記導電パターン上にリードを固着し、前記リードを挟持し、前記樹脂封止金型のキャビティ内に前記回路基板を収納した後、前記回路基板の長手方向の側面側の中央領域であり、且つ前記リード間の隙間に配置された前記樹脂封止金型のゲート部から、前記回路基板の短手方向に沿って前記キャビティ内に樹脂を注入し、
前記ゲート部の前記キャビティへの入り口は、前記回路基板の裏面と前記樹脂封止金型との隙間と同じ高さに配置されることを特徴とする回路装置の製造方法。 - 前記回路基板の表面側の前記樹脂封止金型には、前記回路基板の長手方向に沿って突出部が配置され、前記回路基板表面側へと流れた樹脂は、前記突出部によりその流速が遅くなることを特徴とする請求項3に記載の回路装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009199925A JP5457762B2 (ja) | 2009-08-31 | 2009-08-31 | 回路装置及びその製造方法 |
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JP2009199925A JP5457762B2 (ja) | 2009-08-31 | 2009-08-31 | 回路装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011054623A JP2011054623A (ja) | 2011-03-17 |
JP5457762B2 true JP5457762B2 (ja) | 2014-04-02 |
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JP2009199925A Active JP5457762B2 (ja) | 2009-08-31 | 2009-08-31 | 回路装置及びその製造方法 |
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JP (1) | JP5457762B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013073542A1 (ja) * | 2011-11-18 | 2013-05-23 | 日本電気株式会社 | 電子モジュールおよび電子モジュールの製造方法 |
JP2013120914A (ja) * | 2011-12-09 | 2013-06-17 | Semiconductor Components Industries Llc | 回路装置の製造方法 |
JP2014072347A (ja) * | 2012-09-28 | 2014-04-21 | Sanken Electric Co Ltd | 半導体装置の製造方法、および、半導体装置 |
JP5971270B2 (ja) | 2014-02-27 | 2016-08-17 | トヨタ自動車株式会社 | 半導体装置の製造方法および製造装置 |
JP2019165064A (ja) * | 2018-03-19 | 2019-09-26 | トヨタ自動車株式会社 | 半導体モジュール |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6191937A (ja) * | 1984-10-12 | 1986-05-10 | Sanken Electric Co Ltd | 樹脂封止型半導体装置の製造方法 |
JP2751896B2 (ja) * | 1995-11-30 | 1998-05-18 | 日本電気株式会社 | 樹脂封止型半導体装置 |
JP4073559B2 (ja) * | 1998-10-30 | 2008-04-09 | 三菱電機株式会社 | 半導体装置 |
JP2000150553A (ja) * | 1998-11-09 | 2000-05-30 | Toshiba Corp | 半導体モジュール及び半導体モジュール製造方法 |
JP5095957B2 (ja) * | 2006-05-31 | 2012-12-12 | オンセミコンダクター・トレーディング・リミテッド | 回路装置の製造方法 |
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2009
- 2009-08-31 JP JP2009199925A patent/JP5457762B2/ja active Active
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JP2011054623A (ja) | 2011-03-17 |
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