JP5422497B2 - 基板乾燥方法 - Google Patents
基板乾燥方法 Download PDFInfo
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- JP5422497B2 JP5422497B2 JP2010142301A JP2010142301A JP5422497B2 JP 5422497 B2 JP5422497 B2 JP 5422497B2 JP 2010142301 A JP2010142301 A JP 2010142301A JP 2010142301 A JP2010142301 A JP 2010142301A JP 5422497 B2 JP5422497 B2 JP 5422497B2
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- ipa
- substrate
- drying
- semiconductor substrate
- temperature
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- 239000000758 substrate Substances 0.000 title claims description 84
- 238000001035 drying Methods 0.000 title claims description 70
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 180
- 239000004065 semiconductor Substances 0.000 claims description 42
- 239000000126 substance Substances 0.000 claims description 41
- 239000007788 liquid Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 31
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims 1
- 230000001172 regenerating effect Effects 0.000 claims 1
- 238000004140 cleaning Methods 0.000 description 24
- 239000007789 gas Substances 0.000 description 21
- 239000002904 solvent Substances 0.000 description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 239000012071 phase Substances 0.000 description 13
- 239000012530 fluid Substances 0.000 description 9
- 239000007791 liquid phase Substances 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 238000000352 supercritical drying Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
Description
10 基板洗浄部
20 基板搬送部
30 基板乾燥部
Claims (4)
- 表面が薬液で濡れ、アスペクト比10以上のパターンが形成された半導体基板をチャンバ内に導入する工程と、
前記薬液を前記半導体基板上に残留させつつ、前記薬液の臨界温度未満の所定温度まで昇温する工程と、
前記所定温度において前記半導体基板上に残留している前記薬液を全て気化させ、前記半導体基板を乾燥させる工程と、
気化した前記薬液を前記チャンバから排出する工程と、
を備え、
前記薬液がイソプロピルアルコールである場合、前記所定温度は160℃以上であり、
前記薬液がメタノール又はエタノールである場合、前記所定温度は100℃以上であることを特徴とする基板乾燥方法。 - 昇温前に、前記所定温度、前記所定温度における前記薬液の蒸気圧、及び前記チャンバの容量に基づく液量の前記薬液を前記チャンバ内に供給する工程をさらに備えることを特徴とする請求項1に記載の基板乾燥方法。
- 前記薬液はイソプロピルアルコールであり、前記薬液を前記所定温度に昇温して、前記チャンバ内の圧力を1MPa以上にすることを特徴とする請求項1又は2に記載の基板乾燥方法。
- 前記チャンバから排出された気体状態の前記薬液を回収して再生する工程をさらに備えることを特徴とする請求項1乃至3のいずれかに記載の基板乾燥方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010142301A JP5422497B2 (ja) | 2010-06-23 | 2010-06-23 | 基板乾燥方法 |
US12/980,079 US20110314689A1 (en) | 2010-06-23 | 2010-12-28 | Substrate drying method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010142301A JP5422497B2 (ja) | 2010-06-23 | 2010-06-23 | 基板乾燥方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012009524A JP2012009524A (ja) | 2012-01-12 |
JP5422497B2 true JP5422497B2 (ja) | 2014-02-19 |
Family
ID=45351151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010142301A Active JP5422497B2 (ja) | 2010-06-23 | 2010-06-23 | 基板乾燥方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20110314689A1 (ja) |
JP (1) | JP5422497B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5985156B2 (ja) | 2011-04-04 | 2016-09-06 | 東京エレクトロン株式会社 | 半導体基板の超臨界乾燥方法及び装置 |
JP5458314B2 (ja) * | 2011-06-30 | 2014-04-02 | セメス株式会社 | 基板処理装置及び超臨界流体排出方法 |
JP5544666B2 (ja) * | 2011-06-30 | 2014-07-09 | セメス株式会社 | 基板処理装置 |
JP2013055230A (ja) | 2011-09-05 | 2013-03-21 | Toshiba Corp | 半導体基板の超臨界乾燥方法 |
JP6585243B2 (ja) * | 2013-09-30 | 2019-10-02 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
JP6426927B2 (ja) * | 2013-09-30 | 2018-11-21 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
US10971354B2 (en) | 2016-07-15 | 2021-04-06 | Applied Materials, Inc. | Drying high aspect ratio features |
TWI767920B (zh) * | 2016-07-15 | 2022-06-21 | 美商應用材料股份有限公司 | 乾燥高深寬比特徵 |
JP6878075B2 (ja) * | 2017-03-23 | 2021-05-26 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6949559B2 (ja) * | 2017-05-30 | 2021-10-13 | 東京エレクトロン株式会社 | 基板処理方法 |
US20210198602A1 (en) * | 2018-05-25 | 2021-07-01 | Basf Se | Use of compositions comprising a solvent mixture for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000153244A (ja) * | 1998-11-17 | 2000-06-06 | S R Kaihatsu:Kk | 超臨界または亜臨界流体を洗浄媒質または抽出媒質として使用する場合に於ける媒質循環システム |
US6486078B1 (en) * | 2000-08-22 | 2002-11-26 | Advanced Micro Devices, Inc. | Super critical drying of low k materials |
JP3939178B2 (ja) * | 2002-03-25 | 2007-07-04 | 大日本スクリーン製造株式会社 | 高圧乾燥装置、高圧乾燥方法および基板処理装置 |
US7267727B2 (en) * | 2002-09-24 | 2007-09-11 | Air Products And Chemicals, Inc. | Processing of semiconductor components with dense processing fluids and ultrasonic energy |
JP2004335988A (ja) * | 2003-03-12 | 2004-11-25 | Nippon Telegr & Teleph Corp <Ntt> | 超臨界処理方法及び装置 |
JP2009010256A (ja) * | 2007-06-29 | 2009-01-15 | Toho Kasei Kk | 基板乾燥装置および方法 |
US7838425B2 (en) * | 2008-06-16 | 2010-11-23 | Kabushiki Kaisha Toshiba | Method of treating surface of semiconductor substrate |
JP2010074140A (ja) * | 2008-08-22 | 2010-04-02 | Toshiba Corp | 基板処理装置および基板処理方法 |
-
2010
- 2010-06-23 JP JP2010142301A patent/JP5422497B2/ja active Active
- 2010-12-28 US US12/980,079 patent/US20110314689A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2012009524A (ja) | 2012-01-12 |
US20110314689A1 (en) | 2011-12-29 |
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