JP5444176B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5444176B2 JP5444176B2 JP2010205599A JP2010205599A JP5444176B2 JP 5444176 B2 JP5444176 B2 JP 5444176B2 JP 2010205599 A JP2010205599 A JP 2010205599A JP 2010205599 A JP2010205599 A JP 2010205599A JP 5444176 B2 JP5444176 B2 JP 5444176B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- insulating film
- dielectric constant
- high dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 126
- 125000006850 spacer group Chemical group 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910052746 lanthanum Inorganic materials 0.000 claims description 11
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 25
- 238000002513 implantation Methods 0.000 description 24
- 238000005468 ion implantation Methods 0.000 description 20
- 229910052760 oxygen Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 7
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
2、2a、2b、2c、2d 界面層
2A、2C 厚い界面層
3、3a、3b、3c、3d high−k膜
3A、3B Al含有high−k膜
3C、3D La含有high−k膜
4、4a、4b pMIS用キャップ膜
4’、4c、4d nMIS用キャップ膜
6、6a、6b、6c、6d 金属含有膜
7、7a、7b、7c、7d シリコン膜
8 絶縁膜
8a、8c オフセットスペーサ
8b、8d 下地スペーサ
9a、9b p型エクステンション領域
9c、9d n型エクステンション領域
11 レジストパターン
13a、13c シリコン酸化膜
16a、16b、16c、16d 内側サイドウォールスペーサ
17a、17b、17c、17d 外側サイドウォールスペーサ
18a、18b、18c、18d サイドウォールスペーサ
19a、19b p型ソースドレイン領域
19c、19d n型ソースドレイン領域
20a、20b、20c、20d 金属シリサイド層
50 半導体基板
50a、50b、50c、50d 活性領域
51N n型ウェル領域
51P p型ウェル領域
52a、52b、52c、52d ゲート絶縁膜
53a、53b、53c、53d ゲート電極
Claims (15)
- 同じ導電型の第1のMISトランジスタ及び第2のMISトランジスタを同じ半導体基板上に有する半導体装置であって、
前記第1のMISトランジスタは、前記半導体基板における第1の活性領域上に形成された第1のゲート絶縁膜と、前記第1のゲート絶縁膜上に形成された第1のゲート電極とを備え、
前記第2のMISトランジスタは、前記半導体基板における第2の活性領域上に形成された第2のゲート絶縁膜と、前記第2のゲート絶縁膜上に形成された第2のゲート電極とを備え、
前記第1のゲート絶縁膜は、前記半導体基板と接する第1の界面層と、前記第1の界面層上に形成された第1の高誘電率絶縁膜とを含み、
前記第2のゲート絶縁膜は、前記半導体基板と接する第2の界面層と、前記第2の界面層上に形成された第2の高誘電率絶縁膜とを含み、
前記第1の界面層の厚さは、前記第2の界面層の厚さよりも厚く、
前記第1のゲート電極の側面上には第1の絶縁性スペーサを介して第1のサイドウォールスペーサが形成されており、
前記第2のゲート電極の側面上には第2の絶縁性スペーサを介して第2のサイドウォールスペーサが形成されており、
前記第1の絶縁性スペーサの厚さは、前記第2の絶縁性スペーサの厚さよりも薄いことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記第1の絶縁性スペーサは、I字状の断面形状を持つオフセットスペーサであり、
前記第2の絶縁性スペーサは、L字状の断面形状を持つ下地スペーサであることを特徴とする半導体装置。 - 請求項1又は2に記載の半導体装置において、
前記第1のゲート電極は、前記第1の高誘電率絶縁膜上に形成された第1の金属含有膜と、前記第1の金属含有膜上に形成された第1のシリコン膜とを含み、
前記第2のゲート電極は、前記第2の高誘電率絶縁膜上に形成された第2の金属含有膜と、前記第2の金属含有膜上に形成された第2のシリコン膜とを含み、
前記第1のシリコン膜と前記第1の絶縁性スペーサとの間にはシリコン酸化膜が介在しており、
前記第2のシリコン膜と前記第2の絶縁性スペーサと接していることを特徴とする半導体装置。 - 請求項3に記載の半導体装置において、
前記第1のシリコン膜上には第1の金属シリサイド層が形成されており、
前記第2のシリコン膜上には第2の金属シリサイド層が形成されていることを特徴とする半導体装置。 - 請求項3又は4に記載の半導体装置において、
前記第1の活性領域と前記第1のサイドウォールスペーサとの間にもシリコン酸化膜が介在していることを特徴とする半導体装置。 - 請求項1〜5のいずれか1項に記載の半導体装置において、
前記第1の絶縁性スペーサ及び前記第2の絶縁性スペーサはシリコン窒化膜からなることを特徴とする半導体装置。 - 請求項1〜6のいずれか1項に記載の半導体装置において、
前記第1のMISトランジスタ及び前記第2のMISトランジスタはpMISトランジスタであり、
前記第1の高誘電率絶縁膜及び前記第2の高誘電率絶縁膜はアルミニウムを含有することを特徴とする半導体装置。 - 請求項7に記載の半導体装置において、
前記第1のゲート絶縁膜は、前記第1の高誘電率絶縁膜上に形成され且つアルミニウムを含有する第1のキャップ膜をさらに含み、
前記第2のゲート絶縁膜は、前記第2の高誘電率絶縁膜上に形成され且つアルミニウムを含有する第2のキャップ膜をさらに含むことを特徴とする半導体装置。 - 請求項1〜6のいずれか1項に記載の半導体装置において、
前記第1のMISトランジスタ及び前記第2のMISトランジスタはnMISトランジスタであり、
前記第1の高誘電率絶縁膜及び前記第2の高誘電率絶縁膜はランタンを含有することを特徴とする半導体装置。 - 請求項9に記載の半導体装置において、
前記第1のゲート絶縁膜は、前記第1の高誘電率絶縁膜上に形成され且つランタンを含有する第1のキャップ膜をさらに含み、
前記第2のゲート絶縁膜は、前記第2の高誘電率絶縁膜上に形成され且つランタンを含有する第2のキャップ膜をさらに含むことを特徴とする半導体装置。 - 請求項1〜10のいずれか1項に記載の半導体装置において、
前記第1の高誘電率絶縁膜及び前記第2の高誘電率絶縁膜はハフニウム又はジルコニウムを含むことを特徴とする半導体装置。 - 請求項1〜11のいずれか1項に記載の半導体装置において、
前記第1の界面層及び前記第2の界面層はシリコン酸化膜からなることを特徴とする半導体装置。 - 請求項1〜12のいずれか1項に記載の半導体装置において、
前記第1の高誘電率絶縁膜の厚さと、前記第2の高誘電率絶縁膜の厚さとは同じであることを特徴とする半導体装置。 - 請求項1〜13のいずれか1項に記載の半導体装置において、
前記第1のゲート電極の材料と、前記第2のゲート電極の材料とは同じであることを特徴とする半導体装置。 - 請求項1〜14のいずれか1項に記載の半導体装置において、
前記第1のMISトランジスタの実効仕事関数は、前記第2のMISトランジスタの実効仕事関数よりも高いことを特徴とする半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010205599A JP5444176B2 (ja) | 2010-09-14 | 2010-09-14 | 半導体装置 |
PCT/JP2011/002868 WO2012035684A1 (ja) | 2010-09-14 | 2011-05-24 | 半導体装置及びその製造方法 |
US13/665,305 US8796779B2 (en) | 2010-09-14 | 2012-10-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010205599A JP5444176B2 (ja) | 2010-09-14 | 2010-09-14 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012064648A JP2012064648A (ja) | 2012-03-29 |
JP5444176B2 true JP5444176B2 (ja) | 2014-03-19 |
Family
ID=45831180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010205599A Expired - Fee Related JP5444176B2 (ja) | 2010-09-14 | 2010-09-14 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8796779B2 (ja) |
JP (1) | JP5444176B2 (ja) |
WO (1) | WO2012035684A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5605182B2 (ja) * | 2010-11-17 | 2014-10-15 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び半導体装置 |
JP5927017B2 (ja) * | 2012-04-20 | 2016-05-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
KR20140034347A (ko) * | 2012-08-31 | 2014-03-20 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US20200135873A1 (en) * | 2018-10-30 | 2020-04-30 | International Business Machines Corporation | Device variation control of vertical transport fin field effect transistor devices by selective oxide deposition for shallow trench isolation formation |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5595922A (en) | 1994-10-28 | 1997-01-21 | Texas Instruments | Process for thickening selective gate oxide regions |
JPH08306797A (ja) * | 1995-05-11 | 1996-11-22 | Ricoh Co Ltd | 半導体装置の製造方法 |
WO2003005439A2 (en) * | 2001-07-03 | 2003-01-16 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device comprising mos-transistors having gate oxides of different thicknesses |
JP3943881B2 (ja) * | 2001-09-25 | 2007-07-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2004079606A (ja) * | 2002-08-12 | 2004-03-11 | Fujitsu Ltd | 高誘電率膜を有する半導体装置及びその製造方法 |
US6787421B2 (en) | 2002-08-15 | 2004-09-07 | Freescale Semiconductor, Inc. | Method for forming a dual gate oxide device using a metal oxide and resulting device |
JP4040425B2 (ja) | 2002-10-17 | 2008-01-30 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7563730B2 (en) * | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
JP2009123944A (ja) | 2007-11-15 | 2009-06-04 | Panasonic Corp | 半導体装置及びその製造方法 |
JP5464853B2 (ja) | 2008-12-29 | 2014-04-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2010161308A (ja) | 2009-01-09 | 2010-07-22 | Toshiba Corp | 半導体装置およびその製造方法 |
JP5465958B2 (ja) * | 2009-09-01 | 2014-04-09 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
-
2010
- 2010-09-14 JP JP2010205599A patent/JP5444176B2/ja not_active Expired - Fee Related
-
2011
- 2011-05-24 WO PCT/JP2011/002868 patent/WO2012035684A1/ja active Application Filing
-
2012
- 2012-10-31 US US13/665,305 patent/US8796779B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130056831A1 (en) | 2013-03-07 |
JP2012064648A (ja) | 2012-03-29 |
US8796779B2 (en) | 2014-08-05 |
WO2012035684A1 (ja) | 2012-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6921691B1 (en) | Transistor with dopant-bearing metal in source and drain | |
JP5235784B2 (ja) | 半導体装置 | |
JP5427148B2 (ja) | 半導体装置 | |
TWI469262B (zh) | 半導體裝置之製造方法及半導體裝置 | |
KR100502426B1 (ko) | 듀얼 게이트를 갖는 반도체 소자 및 그 형성 방법 | |
JP2009044051A (ja) | 半導体装置及びその製造方法 | |
WO2011036841A1 (ja) | 半導体装置及びその製造方法 | |
JP5627165B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
WO2010146641A1 (ja) | 半導体装置及びその製造方法 | |
JP5444176B2 (ja) | 半導体装置 | |
JP2009522796A (ja) | 同じ基板上に同じ導電型の低性能及び高性能デバイスを有する半導体デバイス構造体 | |
US8729641B2 (en) | Semiconductor device | |
US20080283974A1 (en) | Semiconductor device and method of manufacturing semiconductor device | |
US7495295B2 (en) | Semiconductor device and method for fabricating the same | |
JP2006013270A (ja) | 半導体装置およびその製造方法 | |
JP2008117842A (ja) | 半導体装置、およびその製造方法 | |
JP4902888B2 (ja) | 半導体装置およびその製造方法 | |
JP5676111B2 (ja) | 半導体装置及びその製造方法 | |
JP2009170494A (ja) | 半導体装置 | |
JP4828982B2 (ja) | 半導体装置の製造方法 | |
JP2012109378A (ja) | 半導体装置およびその製造方法 | |
JP2008258354A (ja) | 半導体装置及びその製造方法 | |
JP2012023119A (ja) | 半導体装置及びその製造方法 | |
JP2004288886A (ja) | 半導体装置及びその製造方法 | |
JP2006324528A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120509 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120511 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130820 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130913 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131220 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |