JP2009522796A - 同じ基板上に同じ導電型の低性能及び高性能デバイスを有する半導体デバイス構造体 - Google Patents
同じ基板上に同じ導電型の低性能及び高性能デバイスを有する半導体デバイス構造体 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
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- 125000006850 spacer group Chemical group 0.000 claims abstract description 66
- 238000002955 isolation Methods 0.000 claims abstract description 17
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- 229910021332 silicide Inorganic materials 0.000 claims abstract description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 36
- 230000005669 field effect Effects 0.000 claims description 25
- 238000001020 plasma etching Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000002019 doping agent Substances 0.000 description 7
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
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- 239000007789 gas Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- 125000004429 atom Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
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- ZRNSSRODJSSVEJ-UHFFFAOYSA-N 2-methylpentacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCC(C)C ZRNSSRODJSSVEJ-UHFFFAOYSA-N 0.000 description 1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- 238000000137 annealing Methods 0.000 description 1
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- 238000007654 immersion Methods 0.000 description 1
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N monofluoromethane Natural products FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決方法】 半導体デバイス構造体を製造する方法は、基板(10)を準備するステップと、第1スペーサ(SP)を備える第1ゲート(G1)、第2スペーサ(SP)を備える第2ゲート(G2)、第1ゲート及び第2ゲートに隣接する、同じ導電型のそれぞれのソース(S)/ドレイン(D)領域、第1ゲートと第2ゲートとの中間に配置された分離領域(STI)、及び第1ゲート、第2ゲート、並びにそれぞれのソース及びドレイン領域の上にあるシリサイドを基板上に形成するステップと、中間構造体を製造するために第1スペーサ上に付加的なスペーサ(RSPS)を形成し、次いで、中間構造体全体の上に応力層を配置するステップと、を含む。
【選択図】 図7
Description
ここで、2つのnFETを含む半導体デバイス構造体を製造するための本発明の好ましい実施形態及び最良の形態を、図1から図7を参照して説明する。しかし、当業者であれば、本開示を考慮すると、本出願者の方法は、2つのpFETを含む半導体デバイス構造体を製造するのにも適用可能であることが理解される。
Claims (20)
- 半導体デバイス構造体を製造するための方法であって、
基板を提供するステップと、
第1スペーサを備える第1ゲート、第2スペーサを備える第2ゲート、前記第1ゲート及び前記第2ゲートに隣接する同じ導電型のそれぞれのソース/ドレイン領域、前記第1ゲートと前記第2ゲートとの中間に配置された分離領域、並びに、前記第1ゲート、前記第2ゲート、及びそれぞれの前記ソース/ドレイン領域の上のシリサイドを、前記基板上に形成するステップと、
中間構造体を製造するために前記第1スペーサ上にのみ付加的なスペーサを形成し、次いで、前記中間構造体全体の上に応力層を配置するステップと
を含む方法。 - 前記付加的なスペーサを形成するステップは、
前記第1スペーサを備えるシリサイド化された前記第1ゲート、前記第2スペーサを備えるシリサイド化された前記第2ゲート、シリサイド化されたそれぞれの前記ソース/ドレイン領域、及び前記分離領域の上に第1誘電体層を配置するステップと、
前記第1スペーサを備えるシリサイド化された前記第1ゲート、前記第1ゲートに隣接するシリサイド化されたそれぞれの前記ソース/ドレイン領域、及び前記分離領域の一部の上に配置された前記第1誘電体層を覆い、次に前記第1誘電体層を前記覆うステップによって覆われなかった前記構造体の部分から除去するステップと
をさらに含む、請求項1に記載の方法。 - 前記除去するステップは、前記第1誘電体層を前記構造体の前記部分から異方性エッチングするステップを含む、請求項2に記載の方法。
- 前記スペーサを備えるシリサイド化された前記第1ゲート、前記第1ゲートに隣接するシリサイド化されたそれぞれの前記ソース/ドレイン領域、及び前記分離領域の前記一部の上に配置された前記第1誘電体層の覆いを取るステップと、
前記第2スペーサを備えるシリサイド化された前記第2ゲート、前記第2ゲートに隣接するシリサイド化されたそれぞれの前記ソース/ドレイン領域、及び前記分離領域の別の一部の上に配置された前記第1誘電体層を覆うステップと、
前記付加的なスペーサを形成するために、前記第1スペーサ上に配置された特定の部分を除いて前記第1誘電体層を除去するステップと
をさらに含む、請求項2に記載の方法。 - 前記異方性エッチングするステップは、前記第1誘電体層を反応性イオン・エッチングするステップを含む、請求項3に記載の方法。
- 前記第1スペーサは60ナノメートル以下の最大幅を有する、請求項1に記載の方法。
- 前記付加的なスペーサの各々は、15nm、30nm、及び50nmから成る群から選択される最大幅を有する、請求項1に記載の方法。
- 前記配置するステップは、本質的に、窒化ケイ素及び炭化ケイ素から成る群から選択される応力層を堆積させるステップをさらに含む、請求項1に記載の方法。
- 前記第1誘電体層を配置するステップは、本質的に、窒化シリコン、炭化シリコン、及び二酸化シリコンから成る群から選択される前記第1誘電体層を堆積させるステップをさらに含む、請求項2に記載の方法。
- 前記第1スペーサ及び前記第1誘電体層は共に70nm以下の最大厚さを有する、請求項2に記載の方法。
- 同じ導電型はn型である、請求項1に記載の方法。
- 同じ導電型はp型である、請求項1に記載の方法。
- 同じ基板上に配置され、同じ導電型であり、それぞれの側壁スペーサを含む、第1電界効果トランジスタ及び第2電界効果トランジスタと、
前記第1電界効果トランジスタの前記側壁スペーサ上にのみ配置された付加的なスペーサであって、応力フィルムが前記第1電界効果トランジスタ、前記付加的なスペーサ、及び前記第2電界効果トランジスタの上に配置されて、前記第1電界効果トランジスタのチャネル内に生じる最大応力が前記第2電界効果トランジスタのチャネル内に生じる最大応力とは異なるものになる、付加的なスペーサと
を含む半導体デバイス構造体。 - 前記第1電界効果トランジスタのチャネル内にもたらされる最大応力は、前記第2電界効果トランジスタのチャネル内にもたらされる最大応力より小さい、請求項13に記載の半導体デバイス構造体。
- 前記第1電界効果トランジスタは第1nFETであり、前記第2電界効果トランジスタは第2nFETである、請求項13に記載の半導体デバイス構造体。
- 前記第1電界効果トランジスタは第1pFETであり、前記第2電界効果トランジスタは第2pFETである、請求項13に記載の半導体デバイス構造。
- 前記付加的なスペーサ及び前記応力フィルムは本質的に窒化シリコンから成る、請求項13に記載の半導体デバイス構造体。
- 前記付加的なスペーサは前記応力フィルムの化学組成とは異なる化学組成を有する、請求項13に記載の半導体デバイス構造体。
- 前記付加的なスペーサの各々は複数の一体部品を含む、請求項13に記載の半導体デバイス構造体。
- 前記複数は2つである、請求項19に記載の半導体デバイス構造。
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PCT/EP2006/069984 WO2007080048A1 (en) | 2006-01-09 | 2006-12-20 | Semiconductor device structure having low and high performance devices of same conductive type on same substrate |
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JP4939548B2 (ja) | 2012-05-30 |
EP1972006A1 (en) | 2008-09-24 |
CN101322239A (zh) | 2008-12-10 |
US20070158753A1 (en) | 2007-07-12 |
US7776695B2 (en) | 2010-08-17 |
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KR20080082998A (ko) | 2008-09-12 |
KR101033700B1 (ko) | 2011-05-09 |
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