JP4902888B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP4902888B2 JP4902888B2 JP2009168592A JP2009168592A JP4902888B2 JP 4902888 B2 JP4902888 B2 JP 4902888B2 JP 2009168592 A JP2009168592 A JP 2009168592A JP 2009168592 A JP2009168592 A JP 2009168592A JP 4902888 B2 JP4902888 B2 JP 4902888B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- gate insulating
- gate electrode
- gate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 125000006850 spacer group Chemical group 0.000 claims description 31
- 208000011380 COVID-19–associated multisystem inflammatory syndrome in children Diseases 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 18
- 239000007769 metal material Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 11
- 238000004380 ashing Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000012535 impurity Substances 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 9
- 238000002513 implantation Methods 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 HfSiON Chemical compound 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
以下、本発明の第1の実施形態に係る半導体装置の製造方法について、図面を参照しながら説明する。図1(a)〜(e)、図2(a)〜(d)は、第1の実施形態に係る半導体装置の製造方法を示す断面図である。
以下、本発明の第2の実施形態に係る半導体装置の製造方法について、図面を参照しながら説明する。図4(a)〜(d)、図5(a)〜(c)は、第2の実施形態に係る半導体装置の製造方法を示す断面図である。
10a 第1の活性領域
10b 第2の活性領域
11 素子分離領域
12a P型領域
12b N型領域
13 第1の誘電体膜
13a 第1の下部ゲート絶縁膜
13b 第2の下部ゲート絶縁膜
14 第2の誘電体膜
14a 第1の上部ゲート絶縁膜
14b 第2の上部ゲート絶縁膜
15 第1のゲート電極膜
15a 第1の下部ゲート電極
15b 第2の下部ゲート電極
16 第2のゲート電極膜
16a 第1の上部ゲート電極
16b 第2の上部ゲート電極
17a 第1のゲート絶縁膜
17b 第2のゲート絶縁膜
18a 第1のゲート電極
18b 第2のゲート電極
20a 第1のオフセットスペーサ
20b 第2のオフセットスペーサ
21a 第1のエクステンション領域
21b 第2のエクステンション領域
22a 第1のサイドウォール
22b 第2のサイドウォール
23a 第1のソース・ドレイン領域
23b 第2のソース・ドレイン領域
24 コンタクト
25 層間絶縁膜
26 配線
27 シリサイド層
34a 第3の誘電体膜
34b 第4の誘電体膜
35a 第1の上部ゲート絶縁膜
35b 第2の上部ゲート絶縁膜
50a NMIS形成領域
50b PMIS形成領域
101 NMISトランジスタ
102 PMISトランジスタ
Claims (12)
- 第1の活性領域と第2の活性領域を有する基板と、前記第1の活性領域上に形成されたNMISトランジスタと、前記第2の活性領域上に形成されたPMISトランジスタとを備え、
前記NMISトランジスタは、前記第1の活性領域上に形成され、高誘電体を含む第1のゲート絶縁膜と、前記第1のゲート絶縁膜上に形成され、金属材料を含む第1のゲート電極とを有し、
前記PMISトランジスタは、前記第2の活性領域上に形成され、高誘電体を含む第2のゲート絶縁膜と、前記第2のゲート絶縁膜上に形成され、金属材料を含む第2のゲート電極とを有し、
前記第1のゲート絶縁膜の側面は、前記第1のゲート電極の側面よりも内側に位置しており、
前記第2のゲート絶縁膜の端部には、前記第1のゲート絶縁膜の端部よりも多くの負の固定電荷が導入されており、
前記第1のゲート電極のゲート長方向の長さに対する前記第1のゲート絶縁膜のゲート長方向の長さの割合は、前記第2のゲート電極のゲート長方向の長さに対する前記第2のゲート絶縁膜のゲート長方向の長さの割合より小さい半導体装置。 - 請求項1に記載の半導体装置において、
前記NMISトランジスタは、前記第1の活性領域のうち前記第1のゲート電極の両側方に位置する領域に形成されたn型の第1のエクステンション領域をさらに有しており、
前記PMISトランジスタは、前記第2の活性領域のうち前記第2のゲート電極の両側方に位置する領域に形成されたp型の第2のエクステンション領域をさらに有しており、
前記第1のエクステンション領域の端部は、前記第1のゲート絶縁膜の端部と同一位置または前記第1のゲート絶縁膜の端部から前記第1のゲート電極の中心寄りに入った位置にあることを特徴とする半導体装置。 - 請求項2に記載の半導体装置において、
前記NMISトランジスタは、前記第1のゲート電極の側面上及び前記第1のゲート絶縁膜の側面上に形成された窒化シリコンからなる第1のオフセットスペーサをさらに有し、
前記PMISトランジスタは、前記第2のゲート電極の側面上及び前記第2のゲート絶縁膜の側面上に形成された窒化シリコンからなる第2のオフセットスペーサをさらに有していることを特徴とする半導体装置。 - 請求項1又は2記載の半導体装置において、
前記第1のゲート絶縁膜にはランタンが含まれており、
前記第2のゲート絶縁膜にはアルミニウムが含まれていることを特徴とする半導体装置。 - 請求項1〜4のうちいずれか1つに記載の半導体装置において、
前記第1のゲート電極は、前記第1のゲート絶縁膜上に形成され、金属または金属化合物で構成された第1の下部ゲート電極と、前記第1の下部ゲート電極上に形成され、ポリシリコンで構成された第1の上部ゲート電極とを有しており、
前記第2のゲート電極は、前記第2のゲート絶縁膜上に形成され、金属または金属化合物で構成された第2の下部ゲート電極と、前記第2の下部ゲート電極上に形成され、ポリシリコンで構成された第2の上部ゲート電極とを有していることを特徴とする半導体装置。 - 請求項1〜5のうちいずれか1つに記載の半導体装置において、
前記第2のゲート絶縁膜の側面は、前記第2のゲート電極の側面と同一面を構成していることを特徴とする半導体装置。 - 請求項1〜5のうちいずれか1つに記載の半導体装置において、
前記第2のゲート絶縁膜の側面は、前記第2のゲート電極の側面よりも内側に位置していることを特徴とする半導体装置。 - 請求項1〜5のうちいずれか1つに記載の半導体装置において、
前記第2のゲート絶縁膜の端部は、前記第2のゲート電極の側面から突き出ていることを特徴とする半導体装置。 - 基板に形成された第1の活性領域上に設けられたNMISトランジスタと、前記基板に形成された第2の活性領域上に設けられたPMISトランジスタとを備える半導体装置の製造方法であって、
前記第1の活性領域上に高誘電体を含む第1のゲート絶縁膜と、金属材料を含む第1のゲート電極とを形成し、前記第2の活性領域上に高誘電体を含む第2のゲート絶縁膜と、金属材料を含む第2のゲート電極とを形成する工程(a)と、
前記第1のゲート絶縁膜の端部と前記第2のゲート絶縁膜の端部とに負の固定電荷を導入する工程(b)と、
前記工程(b)の後に、前記第1のゲート絶縁膜の端部を除去する工程(c)とを備え、
前記工程(c)において、前記第1のゲート電極のゲート長方向の長さに対する前記第1のゲート絶縁膜のゲート長方向の長さの割合は、前記第2のゲート電極のゲート長方向の長さに対する前記第2のゲート絶縁膜のゲート長方向の長さの割合より小さくなる半導体装置の製造方法。 - 請求項9に記載の半導体装置の製造方法において、
前記工程(b)では、酸素を含むガスを用いてアッシングまたはドライエッチングを行うことを特徴とする半導体装置の製造方法。 - 請求項9または10に記載の半導体装置の製造方法において、
前記工程(c)の後に、前記第1のゲート電極の側面上にシリコン窒化膜で構成された第1のオフセットスペーサを形成し、前記第2のゲート電極の側面上にシリコン窒化膜で構成された第2のオフセットスペーサを形成することを特徴とする半導体装置の製造方法。 - 請求項9〜11のうちいずれか1つに記載の半導体装置の製造方法において、
前記第1のゲート絶縁膜と前記第2のゲート絶縁膜とは組成が異なっており、前記工程(c)では、前記第1のゲート絶縁膜と前記第2のゲート絶縁膜のエッチングレートの差を利用したエッチングにより前記第1のゲート絶縁膜の端部を選択的に除去することを特徴とする半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009168592A JP4902888B2 (ja) | 2009-07-17 | 2009-07-17 | 半導体装置およびその製造方法 |
CN2010800307448A CN102473679A (zh) | 2009-07-17 | 2010-02-22 | 半导体装置及其制造方法 |
PCT/JP2010/001143 WO2011007470A1 (ja) | 2009-07-17 | 2010-02-22 | 半導体装置およびその製造方法 |
US13/294,727 US20120056270A1 (en) | 2009-07-17 | 2011-11-11 | Semiconductor device and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009168592A JP4902888B2 (ja) | 2009-07-17 | 2009-07-17 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011023625A JP2011023625A (ja) | 2011-02-03 |
JP4902888B2 true JP4902888B2 (ja) | 2012-03-21 |
Family
ID=43449082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009168592A Expired - Fee Related JP4902888B2 (ja) | 2009-07-17 | 2009-07-17 | 半導体装置およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20120056270A1 (ja) |
JP (1) | JP4902888B2 (ja) |
CN (1) | CN102473679A (ja) |
WO (1) | WO2011007470A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10050147B2 (en) | 2015-07-24 | 2018-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6950096B2 (ja) * | 2019-09-13 | 2021-10-13 | 株式会社日立ハイテク | 半導体装置の製造方法及びプラズマ処理装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0371665A (ja) * | 1989-08-10 | 1991-03-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2000174135A (ja) * | 1998-12-07 | 2000-06-23 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP4122193B2 (ja) * | 2002-08-26 | 2008-07-23 | 富士通株式会社 | 半導体装置の製造方法 |
JP4002219B2 (ja) * | 2003-07-16 | 2007-10-31 | 株式会社ルネサステクノロジ | 半導体装置及び半導体装置の製造方法 |
JPWO2005013374A1 (ja) * | 2003-08-05 | 2006-09-28 | 富士通株式会社 | 半導体装置および半導体装置の製造方法 |
JP4168995B2 (ja) * | 2004-09-30 | 2008-10-22 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
KR100889362B1 (ko) * | 2004-10-19 | 2009-03-18 | 삼성전자주식회사 | 다층 유전체막으로 이루어진 트랜지스터 및 그 제조 방법 |
JP2007019177A (ja) * | 2005-07-06 | 2007-01-25 | Toshiba Corp | 半導体装置 |
JP4791101B2 (ja) * | 2005-08-15 | 2011-10-12 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US20070063277A1 (en) * | 2005-09-22 | 2007-03-22 | International Business Machines Corporation | Multiple low and high k gate oxides on single gate for lower miller capacitance and improved drive current |
CN101123252B (zh) * | 2006-08-10 | 2011-03-16 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
US9070759B2 (en) * | 2006-09-25 | 2015-06-30 | Infineon Technologies Ag | Semiconductor device and method of making same |
EP1944801A1 (en) * | 2007-01-10 | 2008-07-16 | Interuniversitair Microelektronica Centrum | Methods for manufacturing a CMOS device with dual work function |
JP2008211180A (ja) * | 2007-01-31 | 2008-09-11 | Sanyo Electric Co Ltd | ホットエレクトロントランジスタおよびそれを含む半導体装置 |
JP2008305950A (ja) * | 2007-06-07 | 2008-12-18 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP5130834B2 (ja) * | 2007-09-05 | 2013-01-30 | ソニー株式会社 | 半導体装置およびその製造方法 |
JP2009283770A (ja) * | 2008-05-23 | 2009-12-03 | Renesas Technology Corp | 半導体装置の製造方法 |
-
2009
- 2009-07-17 JP JP2009168592A patent/JP4902888B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-22 WO PCT/JP2010/001143 patent/WO2011007470A1/ja active Application Filing
- 2010-02-22 CN CN2010800307448A patent/CN102473679A/zh active Pending
-
2011
- 2011-11-11 US US13/294,727 patent/US20120056270A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN102473679A (zh) | 2012-05-23 |
JP2011023625A (ja) | 2011-02-03 |
WO2011007470A1 (ja) | 2011-01-20 |
US20120056270A1 (en) | 2012-03-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5235784B2 (ja) | 半導体装置 | |
JP4719161B2 (ja) | トランジスタの製造方法 | |
US9978853B2 (en) | Method of forming gate structure of a semiconductor device | |
US6921691B1 (en) | Transistor with dopant-bearing metal in source and drain | |
US8129794B2 (en) | Semiconductor device including MISFETs having different threshold voltages | |
JP5126930B2 (ja) | 半導体装置の製造方法 | |
JP2007243003A (ja) | 半導体装置の製造方法 | |
JP2009044051A (ja) | 半導体装置及びその製造方法 | |
JP2005026586A (ja) | 半導体装置及びその製造方法 | |
TWI714583B (zh) | 半導體裝置及其形成方法 | |
US8035174B2 (en) | Semiconductor device and method for fabricating the same | |
TW202018777A (zh) | 一種製作半導體元件的方法 | |
JP5444176B2 (ja) | 半導体装置 | |
JP4902888B2 (ja) | 半導体装置およびその製造方法 | |
JP2004247341A (ja) | 半導体装置 | |
US8741726B2 (en) | Reacted layer for improving thickness uniformity of strained structures | |
JP2010040710A (ja) | 半導体装置及びその製造方法 | |
JP5676111B2 (ja) | 半導体装置及びその製造方法 | |
JP2010161299A (ja) | 半導体装置及びその製造方法 | |
JP2005093530A (ja) | 半導体装置の製造方法 | |
US7812378B2 (en) | Semiconductor device with high capacitance and low leakage current | |
JP2008027955A (ja) | 半導体装置 | |
JP2005101449A (ja) | 半導体装置及びその製造方法 | |
JP5073158B2 (ja) | 半導体装置及びその製造方法 | |
JP2012023119A (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20110729 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20110809 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110823 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111005 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111206 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111229 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150113 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |