JP5429819B2 - モジュールユニット - Google Patents
モジュールユニット Download PDFInfo
- Publication number
- JP5429819B2 JP5429819B2 JP2010500059A JP2010500059A JP5429819B2 JP 5429819 B2 JP5429819 B2 JP 5429819B2 JP 2010500059 A JP2010500059 A JP 2010500059A JP 2010500059 A JP2010500059 A JP 2010500059A JP 5429819 B2 JP5429819 B2 JP 5429819B2
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- Prior art keywords
- layer
- metal
- module unit
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- ceramic
- Prior art date
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- 239000010410 layer Substances 0.000 claims description 139
- 238000001816 cooling Methods 0.000 claims description 85
- 229910052751 metal Inorganic materials 0.000 claims description 68
- 239000002184 metal Substances 0.000 claims description 68
- 239000000919 ceramic Substances 0.000 claims description 49
- 229910000679 solder Inorganic materials 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 9
- 238000005476 soldering Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 6
- 239000002134 carbon nanofiber Substances 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 4
- 239000011224 oxide ceramic Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000004917 carbon fiber Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000003750 conditioning effect Effects 0.000 claims description 3
- 239000002826 coolant Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 229910017315 Mo—Cu Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 238000007751 thermal spraying Methods 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000011889 copper foil Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000011888 foil Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20436—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing
- H05K7/20445—Inner thermal coupling elements in heat dissipating housings, e.g. protrusions or depressions integrally formed in the housing the coupling element being an additional piece, e.g. thermal standoff
- H05K7/20472—Sheet interfaces
- H05K7/20481—Sheet interfaces characterised by the material composition exhibiting specific thermal properties
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- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/732—Location after the connecting process
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Thermal Sciences (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
・1つの銅フォイルを、均等な酸化銅層が生み出されるように酸化する。
・該銅フォイルを、前記セラミック層の上へ張り付ける。
・該複合材料を、おおよそ1025℃から1083℃までの、たとえば約1071℃の加工温度まで加熱する。
・室内温度まで冷却する。
2 セラミック金属基板、特にセラミック銅基板
3 セラミック層
4、5 金属合金、特に銅層
6、7 電子デバイス
8 モジュールハウジング
9 ハウジングの内部空間
10 コネクタ
11 冷却部またはヒートシンク
11.1 上側
11.2 下側
11.3 側面
11.4、11.5 エンドフェース
12 はんだ層
13 調整層
13a 追加的な層
14 配置
15 中間層
16 レーザー棒
17 サブキャリアまたはサブマウント
18、19 はんだ層
Claims (24)
- 金属冷却部(11)と、セラミック金属基板(2)を含むモジュールユニットであって、前記セラミック金属基板(2)はセラミック層(3)と前記セラミック層(3)の表面における金属合金(4、5)から成り、前記金属合金(4、5)はセラミック層(3)にDCB法や活性はんだ法によって被着され、前記セラミック金属基板(2)は前記金属冷却部(11)の冷却面(11.1)とはんだ層(12)を介して接続されている、モジュールユニットにおいて、
少なくとも1つの調整層(13)が前記金属冷却部(11)に直接的に被着され、
前記調整層は少なくとも1つの膜から成り、100W/m°Kよりも大きな熱伝導率ならびに10・10−6/°Kよりも小さな熱膨張係数を有し、
前記セラミック金属基板(2)が金属合金(5)と共に、はんだ付けによって前記調整層に接続され、
前記調整層は、前記金属冷却部(11)と前記セラミック金属基板(2)の熱膨張係数の違いを補正し、熱膨張係数の違いに起因する前記はんだ層(12)における機械的負荷を解除することで、はんだ付け接続の早期劣化を防止することを特徴とするモジュールユニット。 - 前記調整層(13)、または前記調整層の少なくとも1つの膜が、Mo、W、Mo‐Cu、W‐Cu,Cu‐CNFおよび/またはCuダイヤモンド、炭素および/または炭素ナノ繊維から成っていることを特徴とする、請求項1に記載のモジュールユニット。
- 少なくとも1つの前記調整層(13)が二重膜状であり、前記冷却面(11.1)を成す中間層(15)を含むことを特徴とする、請求項1または2に記載のモジュールユニット。
- 前記中間層(15)が少なくとも1つの金属を含む1つの金属層であり、前記金属がはんだ層(12、18)の構成部分でもあることを特徴とする、請求項3に記載のモジュールユニット。
- 少なくとも1つの前記調整層の厚さが、0.05mmから2mmまでの範囲にあることを特徴とする、請求項1〜4のいずれか1項に記載のモジュールユニット。
- 前記はんだ層の厚さが最大限300μmになることを特徴とする、請求項1〜5のいずれか1項に記載のモジュールユニット。
- 前記はんだ層(12)の厚さが、少なくとも単膜の前記調整層(13)の厚さよりも小さくなることを特徴とする、請求項1〜6のいずれか1項に記載のモジュールユニット。
- 前記セラミック層が酸化アルミニウム・セラミックまたは窒化アルミニウム・セラミックから成ることを特徴とする、請求項1〜7のいずれか1項に記載のモジュールユニット。
- 前記金属冷却部(11)が、前記セラミック金属基板(2)と反対側の表面上に、前記調整層(13)の物質から成る、少なくとも単膜の反対側の層(13a)を備えられていることを特徴とする、請求項1〜8のいずれか1項に記載のモジュールユニット。
- 前記反対側の層(13a)が前記調整層(13)の厚さよりも大きな厚さを有することを特徴とする、請求項9に記載のモジュールユニット。
- 少なくとも1つの電子デバイス(6、7)が前記セラミック金属基板上に取り付けられていることを特徴とする、請求項1〜10のいずれか1項に記載のモジュールユニット。
- 前記調整層(13)が、少なくとも部分的にはコールドガススプレーによって被着された複数の層から成る複合層として製造されていることを特徴とする、請求項1〜8,11のいずれか1項に記載のモジュールユニット。
- 前記調整層(13)および/または前記反対側の層(13a)が、少なくとも部分的にはコールドガススプレーによって被着された複数の層から成る複合層として製造されていることを特徴とする、請求項9または10に記載のモジュールユニット。
- 前記調整層(13)、または前記反対側の層(13a)、または前記調整層(13)または前記反対側の層の少なくとも1つの膜が、前記金属冷却部(11)または前記調整層(13)に、圧着法、コールドスプレー、金属粉末・コールドガスコーティング、熱溶射、スパッタ、または、CVDによって、被着されていることを特徴とする、請求項9、10または13のいずれか1項に記載のモジュールユニット。
- 前記金属冷却部(11)が、少なくとも1つの冷却面(11.1)に対して平行に通る1つの面に関し、前記金属冷却部の層、および前記金属冷却部の層の材料について、対称であることを特徴とする、請求項1〜14のいずれか1項に記載のモジュールユニット。
- 前記金属冷却部(11)が銅またはアルミニウムから成ることを特徴とする、請求項1〜15のいずれか1項に記載のモジュールユニット。
- 前記金属冷却部(11)がDCB法を用いて互いに接続された、複数の層から成ることを特徴とする、請求項1〜16のいずれか1項に記載のモジュールユニット。
- 冷却媒体を流すために、前記金属冷却部(11)に少なくとも1つの冷却ダクトが形成されることを特徴とする、請求項1〜17のいずれか1項に記載のモジュールユニット。
- 少なくとも1つの冷却ダクトにより形成された内側の冷却面が、少なくとも1つの外側の前記冷却面(11.1)に比べて少なくとも2倍大きいことを特徴とする、請求項18に記載のモジュールユニット。
- 少なくとも1つの冷却ダクトにより形成された内側の冷却面が、少なくとも1つの外側の前記冷却面(11.1)に比べて少なくとも4倍大きいことを特徴とする、請求項18に記載のモジュールユニット。
- 前記金属冷却部(11)がヒートパイプであることを特徴とする、請求項1〜20のいずれか1項に記載のモジュールユニット。
- 少なくとも二重膜状の前記調整層(13)および/または、少なくとも二重膜状の前記反対側の層(13a)において、1つの金属単独層が、金属コールドスプレー法によって被着されていることを特徴とする、請求項9、10、13、または14のいずれか1項に記載のモジュールユニット。
- 前記調整層(13)または、前記反対側の層(13a)が、少なくとも1つの、プラズマ溶射された、またはスパッタされたセラミック層、および1つのコールドガスによって溶射された金属層から成ることを特徴とする、請求項22に記載のモジュールユニット。
- 少なくとも1つの前記調整層(13)および/または前記反対側の層(13a)が、CVDから分離されたダイヤモンド、炭素および/または炭素ナノ繊維から成る1つの単独層と、少なくとも1つの、コールドスプレー法および/または化学蒸着によって形成された金属単独層を含むことを特徴とする、請求項9、10、13、14、22、または23のいずれか1項に記載のモジュールユニット。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
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DE102007015771 | 2007-03-30 | ||
DE102007015771.3 | 2007-03-30 | ||
DE102007027991.6 | 2007-06-14 | ||
DE102007027991 | 2007-06-14 | ||
DE102007030389.2A DE102007030389B4 (de) | 2007-03-30 | 2007-06-29 | Moduleinheit mit einer Wärmesenke |
DE102007030389.2 | 2007-06-29 | ||
PCT/DE2007/002186 WO2008119309A2 (de) | 2007-03-30 | 2007-12-04 | Wärmesenke sowie bau- oder moduleinheit mit einer wärmesenke |
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JP2010522974A JP2010522974A (ja) | 2010-07-08 |
JP5429819B2 true JP5429819B2 (ja) | 2014-02-26 |
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JP2010500059A Expired - Fee Related JP5429819B2 (ja) | 2007-03-30 | 2007-12-04 | モジュールユニット |
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US (1) | US8559475B2 (ja) |
EP (1) | EP2132772A2 (ja) |
JP (1) | JP5429819B2 (ja) |
CN (1) | CN101641786B (ja) |
DE (1) | DE102007030389B4 (ja) |
WO (1) | WO2008119309A2 (ja) |
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-
2007
- 2007-06-29 DE DE102007030389.2A patent/DE102007030389B4/de not_active Expired - Fee Related
- 2007-12-04 JP JP2010500059A patent/JP5429819B2/ja not_active Expired - Fee Related
- 2007-12-04 EP EP07846389A patent/EP2132772A2/de not_active Withdrawn
- 2007-12-04 US US12/450,505 patent/US8559475B2/en active Active
- 2007-12-04 CN CN2007800524433A patent/CN101641786B/zh not_active Expired - Fee Related
- 2007-12-04 WO PCT/DE2007/002186 patent/WO2008119309A2/de active Application Filing
Also Published As
Publication number | Publication date |
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US20100290490A1 (en) | 2010-11-18 |
CN101641786A (zh) | 2010-02-03 |
WO2008119309A3 (de) | 2009-02-19 |
CN101641786B (zh) | 2012-12-12 |
WO2008119309A2 (de) | 2008-10-09 |
EP2132772A2 (de) | 2009-12-16 |
JP2010522974A (ja) | 2010-07-08 |
DE102007030389B4 (de) | 2015-08-13 |
DE102007030389A1 (de) | 2008-10-02 |
US8559475B2 (en) | 2013-10-15 |
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