JP5428479B2 - 固体撮像装置の製造方法、固体撮像装置、および電子機器 - Google Patents
固体撮像装置の製造方法、固体撮像装置、および電子機器 Download PDFInfo
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- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
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- 238000005468 ion implantation Methods 0.000 description 31
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- 238000002513 implantation Methods 0.000 description 25
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- -1 boron ions Chemical class 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
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- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910015900 BF3 Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
- H01L27/14656—Overflow drain structures
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Description
1.第1実施形態(赤色の受光領域のみに凹部を設ける例)
2.第2実施形態(各色の受光領域に異なる深さの凹部を設ける例)
3.第3実施形態(固体撮像装置を用いた電子機器の構成例)
尚、第1実施形態および第2実施形態においては、CMOSイメージセンサー等の固体撮像装置の製造方法を説明し、次いで得られた固体撮像装置の構成を説明する。また、n型を第1導電型としp型を第2導電型として説明を行うが、導電型は逆であっても良い。
図1〜図6は、本発明の第1実施形態を説明する工程図であり、以下これらの図に基づいて第1実施形態の固体撮像装置の製造方法を説明する。尚、図面においては赤色の受光画素Rと、緑色または青色の受光画素G,Bとの2画素分の断面図を示している。
図7〜図11は、本発明の第2実施形態を説明する工程図であり、以下これらの図に基づいて第2実施形態の固体撮像装置の製造方法を説明する。ここで説明する製造方法は、第1実施形態の方法を適用して各色の画素に凹部の深さが異なる複数の光電変換部が設けられた構成の固体撮像装置を形成する方法である。尚、図面においては赤色の受光画素R、緑色の受光画素G、および青色の受光画素Bとの3画素分の断面図を示している。
図12には、本発明の第3実施形態として、上述した固体撮像装置を設けた電子機器の構成図を示す。
Claims (15)
- 半導体基板における表面に凹部を形成する第1工程と、
前記凹部の底面からの不純物導入により当該凹部の下方に選択的に第1導電型の不純物領域を形成する第2工程と、
前記凹部内に少なくとも前記不純物領域に接する部分が第1導電型の半導体層を形成する第3工程とを行い、
前記不純物領域と前記半導体層とからなる光電変換部を形成する
固体撮像装置の製造方法。 - 前記第3工程では、少なくとも前記不純物領域に接する部分に第1導電型の不純物を含有させる状態で前記半導体層を形成する
請求項1記載の固体撮像装置の製造方法。 - 前記第3工程では、前記凹部内に不純物を含有しない半導体層を形成した後に、当該半導体層における少なくとも前記不純物領域に接する部分に第1導電型の不純物を導入する
請求項1記載の固体撮像装置の製造方法。 - 前記第3工程では、前記半導体基板の表面高さにまで前記半導体層を形成する
請求項1〜3の何れかに記載の固体撮像装置の製造方法。 - 前記半導体層の表面層を第2導電型として形成する
請求項1〜4の何れかに記載の固体撮像装置の製造方法。 - 前記第3工程では、単結晶シリコンからなる前記半導体基板の凹部内に、前記半導体層として結晶性シリコンまたは結晶性シリコン−ゲルマニウムを形成する
請求項1〜5の何れかに記載の固体撮像装置の製造方法。 - 表面に凹部を有する半導体基板と、
前記凹部の底面から下方における前記半導体基板に設けられ、前記凹部の底面からの不純物導入により形成された第1導電型の不純物領域と、
前記凹部内に少なくとも前記不純物領域に接する部分が第1導電型である半導体層とを備え、
前記不純物領域と前記半導体層とで光電変換部が構成された
固体撮像装置。 - 前記半導体層の表面と前記半導体基板との表面とが同一高さである
請求項7に記載の固体撮像装置。 - 前記半導体層は、表面層が第2導電型である
請求項7または8に記載の固体撮像装置。 - 前記半導体基板は単結晶シリコンからなり、
前記半導体層は、結晶性シリコンまたは結晶性シリコン−ゲルマニウムからなる
請求項7〜9の何れかに記載の固体撮像装置。 - 前記光電変換部と共に、前記半導体基板の表面側に第1導電型の不純物領域のみからなる光電変換部が設けられた
請求項7〜10の何れかに記載の固体撮像装置。 - 前記不純物領域と前記半導体層とで構成された光電変換部は、前記不純物領域のみからなる光電変換部よりも長波長光の受光用として設けられた
請求項11に記載の固体撮像装置。 - 前記凹部の深さが異なる複数の光電変換部が設けられた、
請求項7〜10の何れかに記載の固体撮像装置。 - 前記光電変換部のうち長波長光の受光用ほど前記凹部の深さが大きい
請求項13に記載の固体撮像装置。 - 表面に凹部を有する半導体基板と、
前記凹部の底面から下方における前記半導体基板に設けられ、前記凹部の底面からの不純物導入により形成された第1導電型の不純物領域と、
前記凹部内に少なくとも前記不純物領域に接する部分が第1導電型である半導体層とを備え、
前記不純物領域と前記半導体層とで光電変換部が構成された固体撮像装置を有する
電子機器。
Priority Applications (4)
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JP2009096610A JP5428479B2 (ja) | 2009-04-13 | 2009-04-13 | 固体撮像装置の製造方法、固体撮像装置、および電子機器 |
US12/754,910 US20100258893A1 (en) | 2009-04-13 | 2010-04-06 | Solid-state imaging device manufacturing method, solid-state imaging device, and electronic apparatus |
CN 201010139654 CN101859785A (zh) | 2009-04-13 | 2010-04-06 | 固体摄像器件制造方法、固体摄像器件以及电子装置 |
US13/231,544 US20120001290A1 (en) | 2009-04-13 | 2011-09-13 | Solid-state imaging device manufacturing method, solid-state imaging device, and electronic apparatus |
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JP2009096610A JP5428479B2 (ja) | 2009-04-13 | 2009-04-13 | 固体撮像装置の製造方法、固体撮像装置、および電子機器 |
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JP2010251388A JP2010251388A (ja) | 2010-11-04 |
JP5428479B2 true JP5428479B2 (ja) | 2014-02-26 |
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US (2) | US20100258893A1 (ja) |
JP (1) | JP5428479B2 (ja) |
CN (1) | CN101859785A (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5478217B2 (ja) * | 2009-11-25 | 2014-04-23 | パナソニック株式会社 | 固体撮像装置 |
JP5950320B2 (ja) | 2010-11-10 | 2016-07-13 | 日本電気株式会社 | 電子機器 |
KR101400389B1 (ko) * | 2011-11-01 | 2014-05-28 | 엘지디스플레이 주식회사 | 유기발광소자 |
JP2013115100A (ja) * | 2011-11-25 | 2013-06-10 | Toshiba Corp | 固体撮像装置 |
US9231015B2 (en) * | 2012-09-24 | 2016-01-05 | Omnivision Technologies, Inc. | Backside-illuminated photosensor array with white, yellow and red-sensitive elements |
US20160116409A1 (en) * | 2014-10-28 | 2016-04-28 | Omnivision Technologies, Inc. | Color-Sensitive Image Sensor With Embedded Microfluidics And Associated Methods |
JP6877872B2 (ja) | 2015-12-08 | 2021-05-26 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
CN107316878B (zh) * | 2016-04-26 | 2020-03-13 | 中芯国际集成电路制造(天津)有限公司 | 背照式cmos图像传感器的制备方法 |
TWI685983B (zh) * | 2018-12-04 | 2020-02-21 | 力晶積成電子製造股份有限公司 | 光二極體結構其製造方法 |
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JP2959460B2 (ja) * | 1996-01-30 | 1999-10-06 | 日本電気株式会社 | 固体撮像装置 |
KR100298178B1 (ko) * | 1998-06-29 | 2001-08-07 | 박종섭 | 이미지센서의포토다이오드 |
US6465846B1 (en) * | 2000-03-22 | 2002-10-15 | Seiko Instruments Inc. | Semiconductor integrated circuit device having trench-type photodiode |
US8039882B2 (en) * | 2003-08-22 | 2011-10-18 | Micron Technology, Inc. | High gain, low noise photodiode for image sensors and method of formation |
US7420233B2 (en) * | 2003-10-22 | 2008-09-02 | Micron Technology, Inc. | Photodiode for improved transfer gate leakage |
US7279764B2 (en) * | 2004-06-01 | 2007-10-09 | Micron Technology, Inc. | Silicon-based resonant cavity photodiode for image sensors |
US7145190B2 (en) * | 2004-08-16 | 2006-12-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pinned photodiode integrated with trench isolation and fabrication method |
KR100672695B1 (ko) * | 2004-12-21 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100670538B1 (ko) * | 2004-12-30 | 2007-01-16 | 매그나칩 반도체 유한회사 | 광 특성을 향상시킬 수 있는 이미지센서 및 그 제조 방법 |
KR100718876B1 (ko) * | 2005-06-23 | 2007-05-17 | (주)실리콘화일 | 이미지 센서의 픽셀 및 그 제조방법 |
US7659564B2 (en) * | 2006-02-14 | 2010-02-09 | International Business Machines Corporation | CMOS imager photodiode with enhanced capacitance |
KR100812079B1 (ko) * | 2006-08-22 | 2008-03-07 | 동부일렉트로닉스 주식회사 | 수직형 바이폴라 접합 트랜지스터 및 그 제조 방법, 이를갖는 씨모스 이미지 센서 및 그 제조 방법 |
US7569804B2 (en) * | 2006-08-30 | 2009-08-04 | Dongbu Hitek Co., Ltd. | Image sensor having exposed dielectric layer in a region corresponding to a first color filter by a passivation layer |
JP4950703B2 (ja) * | 2007-03-02 | 2012-06-13 | 株式会社東芝 | 固体撮像素子 |
-
2009
- 2009-04-13 JP JP2009096610A patent/JP5428479B2/ja not_active Expired - Fee Related
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2010
- 2010-04-06 CN CN 201010139654 patent/CN101859785A/zh active Pending
- 2010-04-06 US US12/754,910 patent/US20100258893A1/en not_active Abandoned
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2011
- 2011-09-13 US US13/231,544 patent/US20120001290A1/en not_active Abandoned
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US20120001290A1 (en) | 2012-01-05 |
US20100258893A1 (en) | 2010-10-14 |
JP2010251388A (ja) | 2010-11-04 |
CN101859785A (zh) | 2010-10-13 |
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