JP5409626B2 - Ge基盤の金属・絶縁体転移薄膜、その金属・絶縁体転移薄膜を含むMIT素子、及びそのMIT素子の製造方法 - Google Patents
Ge基盤の金属・絶縁体転移薄膜、その金属・絶縁体転移薄膜を含むMIT素子、及びそのMIT素子の製造方法 Download PDFInfo
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- JP5409626B2 JP5409626B2 JP2010519140A JP2010519140A JP5409626B2 JP 5409626 B2 JP5409626 B2 JP 5409626B2 JP 2010519140 A JP2010519140 A JP 2010519140A JP 2010519140 A JP2010519140 A JP 2010519140A JP 5409626 B2 JP5409626 B2 JP 5409626B2
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- 239000010409 thin film Substances 0.000 title claims description 226
- 230000007704 transition Effects 0.000 title claims description 40
- 239000012212 insulator Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims description 112
- 239000000463 material Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 39
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 23
- 229910052732 germanium Inorganic materials 0.000 claims description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 15
- 239000010936 titanium Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000011135 tin Substances 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000003877 atomic layer epitaxy Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 238000004549 pulsed laser deposition Methods 0.000 description 7
- 229910005542 GaSb Inorganic materials 0.000 description 6
- 229910000673 Indium arsenide Inorganic materials 0.000 description 6
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000011133 lead Substances 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 238000003980 solgel method Methods 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000007847 structural defect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910000618 GeSbTe Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910002826 PrBa Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
- H10N99/03—Devices using Mott metal-insulator transition, e.g. field-effect transistor-like devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
Claims (4)
- 基板上にゲルマニウム(Ge)単元素物質から形成され、所定転移電圧で不連続金属・絶縁体転移(MIT)が発生するGe基盤のMIT薄膜であって、
前記基板は、前記Ge基盤のMIT薄膜と同一の格子構造を有する非ドープ型GaAs基板であるか、または前記Ge基盤のMIT薄膜の格子定数と7%異なる格子定数を有する非ドープ型Si基板であり、
前記Ge基盤のMIT薄膜は、MBE法を用いることにより前記基板上に、150〜200nmの厚さを有するように形成されることを特徴とするGe基盤のMIT薄膜。 - 基板と、
前記基板上にゲルマニウム(Ge)単元素物質から形成され、所定転移電圧で不連続金属・絶縁体転移(MIT)が生じるGe基盤のMIT薄膜と、
前記Ge基盤のMIT薄膜に接触する少なくとも2つの薄膜電極と
を備えるMIT素子であって、
前記薄膜電極を介して印加される電圧または電流によって、前記Ge基盤のMIT薄膜において前記不連続MITが発生し、
前記基板は、前記Ge基盤のMIT薄膜と同一の格子構造を有する非ドープ型GaAs基板であるか、または前記Ge基盤のMIT薄膜の格子定数と7%異なる格子定数を有する非ドープ型Si基板であり、
前記Ge基盤のMIT薄膜は、前記基板上に、MBE法を用いて形成されることを特徴とするMIT素子。 - 基板上に、前記基板上にゲルマニウム(Ge)単元素物質から形成され、所定転移電圧で不連続金属・絶縁体転移(MIT)が生じるGe基盤のMIT薄膜を形成するステップと、
前記基板上に、前記Ge基盤のMIT薄膜の両側面及び上面の一部に、第1の薄膜電極と第2の薄膜電極との間で所定間隔を有するように、前記第1の薄膜電極と前記第2の薄膜電極とを形成するステップと
を含むMIT素子を製造する方法であって、
前記基板は、非ドープ型GaAs基板であるか、または非ドープ型シリコン(Si)基板であり、
前記Ge基盤のMIT薄膜は、前記基板上に、MBE法を用いることにより形成され、
前記基板が前記非ドープ型GaAs基板である場合、前記非ドープ型GaAs基板は、前記Ge基盤のMIT薄膜と同じ格子構造を有し、
前記基板が非ドープ型Si基板である場合、前記非ドープ型Si基板は、前記Ge基盤のMIT薄膜の格子定数と7%異なる格子定数を有することを特徴とするMIT素子を製造する方法。 - 前記Ge基盤のMIT薄膜は、400〜500℃の温度、10-10〜10-9torrの圧力で10分間、前記Ge基盤のMIT薄膜を成長させることにより形成されることを特徴とする請求項3に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20070077817 | 2007-08-02 | ||
KR10-2007-0077817 | 2007-08-02 | ||
KR1020070123639A KR20090013657A (ko) | 2007-08-02 | 2007-11-30 | Ge기반 금속-절연체 전이(MIT) 박막, 그 MIT박막을 포함하는 MIT 소자 및 그 MIT 소자 제조방법 |
KR10-2007-0123639 | 2007-11-30 | ||
PCT/KR2008/003516 WO2009017305A1 (en) | 2007-08-02 | 2008-06-20 | Germanium based metal-insulator transition thin film, metal-insulator transition device including the metal-insulator transition thin film, and method of fabricating the metal-insulator transition device |
Publications (2)
Publication Number | Publication Date |
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JP2010535413A JP2010535413A (ja) | 2010-11-18 |
JP5409626B2 true JP5409626B2 (ja) | 2014-02-05 |
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JP2010519140A Expired - Fee Related JP5409626B2 (ja) | 2007-08-02 | 2008-06-20 | Ge基盤の金属・絶縁体転移薄膜、その金属・絶縁体転移薄膜を含むMIT素子、及びそのMIT素子の製造方法 |
Country Status (4)
Country | Link |
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US (1) | US8330135B2 (ja) |
JP (1) | JP5409626B2 (ja) |
KR (1) | KR20090013657A (ja) |
WO (1) | WO2009017305A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130207069A1 (en) * | 2010-10-21 | 2013-08-15 | Matthew D. Pickett | Metal-insulator transition switching devices |
FR2971364B1 (fr) * | 2011-02-07 | 2013-02-15 | Centre Nat Rech Scient | Agencement optimise de particules de triazole |
KR101834904B1 (ko) | 2011-10-31 | 2018-03-08 | 한국전자통신연구원 | 금속-절연체 전이 3 단자 소자와 그를 구비한 전기 전자 시스템 및 그에 따른 정전기 잡음 신호 제거 방법 |
WO2013066006A1 (ko) * | 2011-10-31 | 2013-05-10 | 한국전자통신연구원 | 금속-절연체 전이 3 단자 소자와 그를 구비한 전기 전자 시스템 및 그에 따른 정전기 잡음 신호 제거 방법 |
EP2597647A1 (en) * | 2011-11-28 | 2013-05-29 | Imec | Selector device for memory applications |
JP6061058B2 (ja) * | 2014-10-17 | 2017-01-18 | 株式会社豊田中央研究所 | 電子装置 |
CN107787526B (zh) | 2015-07-31 | 2021-04-06 | 英特尔公司 | 基于功能金属氧化物的微电子器件 |
Family Cites Families (5)
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KR100433623B1 (ko) * | 2001-09-17 | 2004-05-31 | 한국전자통신연구원 | 급격한 금속-절연체 상전이를 이용한 전계 효과 트랜지스터 |
KR100576703B1 (ko) * | 2003-10-23 | 2006-05-03 | 한국전자통신연구원 | 금속-절연체 상전이 고속 스위칭 소자 및 그 제조 방법 |
KR100609699B1 (ko) | 2004-07-15 | 2006-08-08 | 한국전자통신연구원 | 급격한 금속-절연체 전이 반도체 물질을 이용한 2단자반도체 소자 및 그 제조 방법 |
KR100714125B1 (ko) | 2005-03-18 | 2007-05-02 | 한국전자통신연구원 | 급격한 mit 소자를 이용한 저전압 잡음 방지회로 및 그회로를 포함한 전기전자시스템 |
KR100668347B1 (ko) | 2005-10-13 | 2007-01-12 | 삼성전자주식회사 | 금속-절연체 천이막 저항체를 포함하는 반도체 메모리 소자 |
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2007
- 2007-11-30 KR KR1020070123639A patent/KR20090013657A/ko not_active Application Discontinuation
-
2008
- 2008-06-20 US US12/671,890 patent/US8330135B2/en not_active Expired - Fee Related
- 2008-06-20 WO PCT/KR2008/003516 patent/WO2009017305A1/en active Application Filing
- 2008-06-20 JP JP2010519140A patent/JP5409626B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2010535413A (ja) | 2010-11-18 |
US8330135B2 (en) | 2012-12-11 |
KR20090013657A (ko) | 2009-02-05 |
US20110233616A1 (en) | 2011-09-29 |
WO2009017305A1 (en) | 2009-02-05 |
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