JP5364422B2 - 発光装置及びその作製方法 - Google Patents
発光装置及びその作製方法 Download PDFInfo
- Publication number
- JP5364422B2 JP5364422B2 JP2009096595A JP2009096595A JP5364422B2 JP 5364422 B2 JP5364422 B2 JP 5364422B2 JP 2009096595 A JP2009096595 A JP 2009096595A JP 2009096595 A JP2009096595 A JP 2009096595A JP 5364422 B2 JP5364422 B2 JP 5364422B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- electrode layer
- layer
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 58
- 238000005530 etching Methods 0.000 claims abstract description 144
- 239000004065 semiconductor Substances 0.000 claims abstract description 100
- 239000012535 impurity Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 94
- 238000001039 wet etching Methods 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 14
- 239000010408 film Substances 0.000 abstract description 247
- 239000010409 thin film Substances 0.000 abstract description 73
- 239000010410 layer Substances 0.000 description 226
- 238000005401 electroluminescence Methods 0.000 description 58
- 239000000758 substrate Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 27
- 230000008569 process Effects 0.000 description 19
- 239000003990 capacitor Substances 0.000 description 16
- 239000011159 matrix material Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 9
- 230000006870 function Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000005236 sound signal Effects 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 150000002894 organic compounds Chemical group 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910017073 AlLi Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B44/00—Circuit arrangements for operating electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Description
本実施の形態では、薄膜トランジスタの作製方法及び該薄膜トランジスタがマトリクス状に配置された発光装置の一例であるEL表示装置の作製方法について、図1乃至図19を参照して説明する。
本実施の形態は、実施の形態1にて説明した方法により作製した表示パネル又は表示装置を表示部として組み込んだ電子機器について、図20乃至図22を参照して説明する。このような電子機器としては、例えば、ビデオカメラ若しくはデジタルカメラ等のカメラ、ヘッドマウントディスプレイ(ゴーグル型ディスプレイ)、カーナビゲーション、プロジェクタ、カーステレオ、パーソナルコンピュータ、携帯情報端末(モバイルコンピュータ、携帯電話または電子書籍等)が挙げられる。それらの一例を図20に示す。
12 トランジスタ
13 トランジスタ
14 容量素子
15 発光素子
16 ゲート配線
17 電源線
18 ソース配線
19 電源線
20 共通電極
21 画素
100 基板
102 導電膜
104 絶縁膜
106 半導体膜
108 不純物半導体膜
110 導電膜
112 レジストマスク
114 薄膜積層体
116 ゲート電極層
118 レジストマスク
120 ドレイン電極層
122 ドレイン領域
124 半導体層
126 絶縁膜
128 開口部
130 開口部
132 画素電極層
134 絶縁膜
136 開口部
138 EL層
139 画素電極層
140 グレートーンマスク
141 基板
142 遮光部
143 スリット部
145 ハーフトーンマスク
146 基板
147 半透光部
148 遮光部
200 携帯電話
201 筐体
202 筐体
203 表示部
204 スピーカ
205 マイクロフォン
206 操作キー
207 ポインティングデバイス
208 表面カメラ用レンズ
209 外部接続端子ジャック
210 イヤホン端子
211 キーボード
212 外部メモリスロット
213 裏面カメラ
214 ライト
221 筐体
222 表示用パネル
223 主画面
224 モデム
225 受信機
226 リモコン操作機
227 表示部
228 サブ画面
229 スピーカ部
231 本体
232 表示部
250 表示パネル
251 画素部
252 信号線駆動回路
253 走査線駆動回路
254 チューナ
255 映像信号増幅回路
256 映像信号処理回路
257 コントロール回路
258 信号分割回路
259 音声信号増幅回路
260 音声信号処理回路
261 制御回路
262 入力部
263 スピーカ
116A ゲート電極層
116B ゲート電極層
116C ゲート電極層
118A レジストマスク
118B レジストマスク
118C レジストマスク
118D レジストマスク
118E レジストマスク
118F レジストマスク
120A ドレイン電極層
120B ドレイン電極層
120C ドレイン電極層
120D ドレイン電極層
120E ドレイン電極層
120F ドレイン電極層
128A 開口部
128B 開口部
128C 開口部
132A 画素電極層
132B 画素電極層
132C 画素電極層
Claims (7)
- 第1の導電膜、第1の絶縁膜、半導体膜、不純物半導体膜及び第2の導電膜を順に積層して形成し、
前記第2の導電膜上に第1のレジストマスクを形成し、
前記第1のレジストマスクを用いて前記第1の導電膜、前記第1の絶縁膜、前記半導体膜、前記不純物半導体膜及び前記第2の導電膜に第1のエッチングを行って少なくとも前記第1の導電膜を露出させ、
前記第1の導電膜の一部にサイドエッチングを伴う第2のエッチングを行ってゲート電極層を形成し、
前記第1のレジストマスクを除去した後、第2のレジストマスクを形成し、
前記第2のレジストマスクを用いて前記第2の導電膜、前記不純物半導体膜及び前記半導体膜の一部に第3のエッチングを行ってソース電極及びドレイン電極層、ソース領域及びドレイン領域層並びに半導体層を形成し、
前記第2のレジストマスクを除去した後、前記ソース電極及びドレイン電極層、前記ソース領域及びドレイン領域層並びに前記半導体層を覆うように第2の絶縁膜を形成し、
前記第2の絶縁膜に第1の開口部を形成した後、前記ソース電極及びドレイン電極層の一部と電気的に接続される第1の画素電極層を選択的に形成し、
前記第2の絶縁膜及び前記第1の画素電極層を覆うように第3の絶縁膜を形成し、
前記第3の絶縁膜の前記第1の画素電極層と重畳する領域の一部を除去して第2の開口部を形成し、
前記第2の開口部の前記第1の画素電極層上にEL層を選択的に形成し、
前記EL層上に第2の画素電極層を形成することを特徴とする発光装置の作製方法。 - 第1の導電膜、第1の絶縁膜、半導体膜、不純物半導体膜及び第2の導電膜を順に積層して形成し、
前記第2の導電膜上に多階調マスクを用いて凹部を有するレジストマスクを形成し、
前記レジストマスクを用いて前記第1の絶縁膜、前記半導体膜、前記不純物半導体膜及び前記第2の導電膜に第1のエッチングを行って少なくとも前記第1の導電膜を露出させ、
前記第1の導電膜の一部にサイドエッチングを伴う第2のエッチングを行ってゲート電極層を形成し、
前記レジストマスクを後退させて前記レジストマスクの凹部と重畳する領域の前記第2の導電膜を露出させ、
前記後退させたレジストマスクを用いて前記第2の導電膜、前記不純物半導体膜及び前記半導体膜の一部に第3のエッチングを行ってソース電極及びドレイン電極層、ソース領域及びドレイン領域層並びに半導体層を形成し、
前記レジストマスクを除去した後、前記ソース電極及びドレイン電極層、前記ソース領域及びドレイン領域層並びに前記半導体層を覆うように第2の絶縁膜を形成し、
前記第2の絶縁膜に第1の開口部を形成した後、前記ソース電極及びドレイン電極層の一部と電気的に接続される第1の画素電極層を選択的に形成し、
前記第2の絶縁膜及び前記第1の画素電極層を覆うように第3の絶縁膜を形成し、
前記第3の絶縁膜の前記第1の画素電極層と重畳する領域の一部を除去して第2の開口部を形成し、
前記第2の開口部の前記第1の画素電極層上にEL層を選択的に形成し、
前記EL層上に第2の画素電極層を形成することを特徴とする発光装置の作製方法。 - 請求項1または2において、
前記EL層は、印刷法又はインクジェット法を用いて選択的に形成されることを特徴とする発光装置の作製方法。 - 請求項1乃至3のいずれか一において、
前記第1のエッチングにより前記第1の絶縁膜から形成されたパターンの側面から所定の距離だけ内側に側面を有するゲート電極層を、前記サイドエッチングにより形成することを特徴とする発光装置の作製方法。 - 請求項1乃至4のいずれか一において、
前記第1のエッチングはドライエッチングであり、
前記第2のエッチングはウエットエッチングであることを特徴とする発光装置の作製方法。 - 請求項1乃至5のいずれか一に記載の作製方法を用いて製造された発光装置。
- 請求項6に記載の発光装置を用いた電子機器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009096595A JP5364422B2 (ja) | 2008-04-17 | 2009-04-13 | 発光装置及びその作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008108193 | 2008-04-17 | ||
JP2008108193 | 2008-04-17 | ||
JP2009096595A JP5364422B2 (ja) | 2008-04-17 | 2009-04-13 | 発光装置及びその作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009276758A JP2009276758A (ja) | 2009-11-26 |
JP5364422B2 true JP5364422B2 (ja) | 2013-12-11 |
Family
ID=41200376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009096595A Expired - Fee Related JP5364422B2 (ja) | 2008-04-17 | 2009-04-13 | 発光装置及びその作製方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7985605B2 (ja) |
JP (1) | JP5364422B2 (ja) |
KR (1) | KR101582101B1 (ja) |
CN (1) | CN101562155B (ja) |
TW (1) | TWI500089B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7994021B2 (en) * | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US8101442B2 (en) * | 2008-03-05 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing EL display device |
US8207026B2 (en) * | 2009-01-28 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and manufacturing method of display device |
KR101015850B1 (ko) * | 2009-02-09 | 2011-02-24 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 제조 방법 |
US7989234B2 (en) * | 2009-02-16 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor and method for manufacturing display device |
US8202769B2 (en) | 2009-03-11 | 2012-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5539765B2 (ja) * | 2009-03-26 | 2014-07-02 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
KR102304337B1 (ko) | 2013-09-13 | 2021-09-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
KR102209145B1 (ko) * | 2014-08-18 | 2021-01-29 | 삼성디스플레이 주식회사 | 표시 장치 |
CN106684037B (zh) * | 2017-03-22 | 2019-09-24 | 深圳市华星光电半导体显示技术有限公司 | 优化4m制程的tft阵列制备方法 |
JP6788545B2 (ja) * | 2017-04-26 | 2020-11-25 | 東京エレクトロン株式会社 | タングステン膜を形成する方法 |
CN112335023B (zh) * | 2018-06-27 | 2024-07-09 | 三菱电机株式会社 | 半导体装置的制造方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122123A (en) | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
JPH0311744A (ja) | 1989-06-09 | 1991-01-21 | Citizen Watch Co Ltd | 薄膜トランジスタの製造方法 |
JPH0822029A (ja) * | 1994-07-08 | 1996-01-23 | Sanyo Electric Co Ltd | 液晶表示装置及びその製造方法 |
EP0775931B1 (en) | 1995-11-21 | 2005-10-05 | Samsung Electronics Co., Ltd. | Method of manufacturing a liquid crystal display |
JP3833327B2 (ja) * | 1997-02-03 | 2006-10-11 | 三洋電機株式会社 | 薄膜トランジスタの製造方法、表示装置、密着型イメージセンサ、三次元ic |
US6493048B1 (en) | 1998-10-21 | 2002-12-10 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same |
KR100669093B1 (ko) * | 1999-11-05 | 2007-01-16 | 엘지.필립스 엘시디 주식회사 | 액정표시소자의 제조방법 |
KR100325079B1 (ko) | 1999-12-22 | 2002-03-02 | 주식회사 현대 디스플레이 테크놀로지 | 고개구율 및 고투과율 액정표시장치의 제조방법 |
US7223643B2 (en) | 2000-08-11 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
TW488080B (en) | 2001-06-08 | 2002-05-21 | Au Optronics Corp | Method for producing thin film transistor |
JP2003179069A (ja) | 2001-12-12 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、液晶表示装置、有機エレクトロルミネッセンス素子、ならびに表示装置用基板およびその製造方法 |
JP2004341465A (ja) * | 2003-05-14 | 2004-12-02 | Obayashi Seiko Kk | 高品質液晶表示装置とその製造方法 |
TWI239651B (en) * | 2004-04-30 | 2005-09-11 | Quanta Display Inc | Manufacturing method of a thin film transistor-liquid crystal display |
JP4754798B2 (ja) * | 2004-09-30 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR101112534B1 (ko) * | 2005-03-04 | 2012-03-13 | 삼성전자주식회사 | 유기 발광 표시 소자 및 그 제조 방법 |
KR20060120300A (ko) * | 2005-05-19 | 2006-11-27 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101201017B1 (ko) | 2005-06-27 | 2012-11-13 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
KR101225440B1 (ko) * | 2005-06-30 | 2013-01-25 | 엘지디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
US8149346B2 (en) | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
JP5105811B2 (ja) | 2005-10-14 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
EP1958019B1 (en) | 2005-12-05 | 2017-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
EP3229066A1 (en) | 2005-12-05 | 2017-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Transflective liquid crystal display with a horizontal electric field configuration |
JP4822437B2 (ja) * | 2006-01-07 | 2011-11-24 | 株式会社半導体エネルギー研究所 | 表示装置およびその作製方法 |
TWI322288B (en) | 2006-03-07 | 2010-03-21 | Au Optronics Corp | Manufacture method of pixel array substrate |
KR20080001181A (ko) * | 2006-06-29 | 2008-01-03 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판과 그 제조방법 |
US7994021B2 (en) * | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
WO2008099528A1 (ja) * | 2007-02-13 | 2008-08-21 | Sharp Kabushiki Kaisha | 表示装置、表示装置の製造方法 |
KR101424816B1 (ko) * | 2008-02-18 | 2014-07-31 | 삼성전자주식회사 | 나노와이어를 포함하는 박막 트랜지스터 및 그의 제조방법 |
-
2009
- 2009-04-13 US US12/422,470 patent/US7985605B2/en not_active Expired - Fee Related
- 2009-04-13 JP JP2009096595A patent/JP5364422B2/ja not_active Expired - Fee Related
- 2009-04-14 CN CN200910132821XA patent/CN101562155B/zh not_active Expired - Fee Related
- 2009-04-16 TW TW098112644A patent/TWI500089B/zh not_active IP Right Cessation
- 2009-04-17 KR KR1020090033546A patent/KR101582101B1/ko active IP Right Grant
-
2011
- 2011-07-08 US US13/178,538 patent/US8148723B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2009276758A (ja) | 2009-11-26 |
KR101582101B1 (ko) | 2016-01-04 |
KR20090110266A (ko) | 2009-10-21 |
US20090261369A1 (en) | 2009-10-22 |
US20110260208A1 (en) | 2011-10-27 |
US7985605B2 (en) | 2011-07-26 |
US8148723B2 (en) | 2012-04-03 |
TW201009957A (en) | 2010-03-01 |
CN101562155A (zh) | 2009-10-21 |
CN101562155B (zh) | 2013-12-11 |
TWI500089B (zh) | 2015-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7225441B2 (ja) | El表示装置の作製方法 | |
JP5364422B2 (ja) | 発光装置及びその作製方法 | |
JP5383256B2 (ja) | 薄膜トランジスタ及びその作製方法、並びに表示装置及びその作製方法 | |
JP5396165B2 (ja) | 薄膜トランジスタの作製方法及び表示装置の作製方法 | |
JP5371487B2 (ja) | 薄膜トランジスタ及びその作製方法、並びに表示装置及びその作製方法 | |
US7883943B2 (en) | Method for manufacturing thin film transistor and method for manufacturing display device | |
JP2010212677A (ja) | 薄膜トランジスタの作製方法及び表示装置の作製方法 | |
JP2010230950A (ja) | 表示装置の作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120119 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121220 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130122 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130128 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130326 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130903 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130909 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5364422 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |