JP5361467B2 - 気化器 - Google Patents
気化器 Download PDFInfo
- Publication number
- JP5361467B2 JP5361467B2 JP2009061587A JP2009061587A JP5361467B2 JP 5361467 B2 JP5361467 B2 JP 5361467B2 JP 2009061587 A JP2009061587 A JP 2009061587A JP 2009061587 A JP2009061587 A JP 2009061587A JP 5361467 B2 JP5361467 B2 JP 5361467B2
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- JP
- Japan
- Prior art keywords
- gas
- pmda
- raw material
- unit
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Description
(第1の実施の形態)
最初に、本発明の第1の実施の形態に係る気化器について説明する。
(第1の実施の形態の第1の変形例)
次に、図4及び図5を参照し、本発明の第1の実施の形態の第1の変形例について説明する。
(第1の実施の形態の第2の変形例)
次に、図6を参照し、本発明の第1の実施の形態の第2の変形例について説明する。
(第2の実施の形態)
次に、本発明の第2の実施の形態に係る成膜装置について説明する。本実施の形態に係る成膜装置は、本発明の第1の実施の形態に係る気化器から供給されるPMDAガスを用いてウェハ表面に絶縁保護膜を成膜する成膜装置である。
2、2a、2b 加熱部
3、3a、3b ガス導入部
4、4a、4b ガス導出部
5、5a 原料貯蔵部
6a、6b 断熱材
7、7a 原料導入口
8、8c メッシュ部
8a 第1のメッシュ部
8b 第2のメッシュ部
9、9a ヒータ(加熱機構)
10、10a、10b 気化器(PMDA気化器)
11 ガス導入管
12 ガス導入口
13、13a ガス導入室
14、14a ガス導出室
15 ガス導出口
16 ガス導出管
17 ガス通路
20 成膜装置
21 チャンバー
22 ウェハボート
23a、23b インジェクタ
25 排気口
27 ヒータ
30 ODA気化器
31、32 バルブ
33 導入部
C キャリアガス
R PMDAガス(原料ガス)
RM、RM1、RM2 PMDA粉末(固体原料)
W ウェハ
Claims (5)
- 固体原料を昇華して発生させた原料ガスを成膜装置へ供給する気化器において、
前記固体原料を加熱して昇華させ、原料ガスを発生させる加熱部と、
前記加熱部の上方に設けられ、前記加熱部に前記固体原料を供給する供給部と、
前記加熱部の下方に設けられ、前記加熱部で発生させた原料ガスを搬送するキャリアガスが通流するガス通路と
を有し、
前記加熱部は、メッシュ部を有し、
前記ガス通路を通流するキャリアガスは、前記メッシュ部を介して前記固体原料と接することを特徴とする気化器。 - 前記メッシュ部のメッシュのサイズは、前記固体原料の原料粉末の粒径より小さいことを特徴とする請求項1に記載の気化器。
- 前記ガス通路から通流されるキャリアガスは、常温より高い温度であることを特徴とする請求項1又は2に記載の気化器。
- 前記ガス通路から通流されるキャリアガスは、前記固体原料の昇華点よりも高い温度であることを特徴とする請求項1乃至3のいずれか一項に記載の気化器。
- 前記固体原料を貯蔵する貯蔵部を振動させる振動機構を有することを特徴とする請求項1乃至4のいずれか一項に記載の気化器。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009061587A JP5361467B2 (ja) | 2009-03-13 | 2009-03-13 | 気化器 |
KR1020107015120A KR101128348B1 (ko) | 2009-03-13 | 2010-03-11 | 기화기 |
US12/933,878 US20110023784A1 (en) | 2009-03-13 | 2010-03-11 | Evaporator |
PCT/JP2010/054118 WO2010104150A1 (ja) | 2009-03-13 | 2010-03-11 | 気化器 |
TW099107178A TWI418644B (zh) | 2009-03-13 | 2010-03-12 | Gasifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009061587A JP5361467B2 (ja) | 2009-03-13 | 2009-03-13 | 気化器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010219146A JP2010219146A (ja) | 2010-09-30 |
JP5361467B2 true JP5361467B2 (ja) | 2013-12-04 |
Family
ID=42728438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009061587A Active JP5361467B2 (ja) | 2009-03-13 | 2009-03-13 | 気化器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20110023784A1 (ja) |
JP (1) | JP5361467B2 (ja) |
KR (1) | KR101128348B1 (ja) |
TW (1) | TWI418644B (ja) |
WO (1) | WO2010104150A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5820731B2 (ja) * | 2011-03-22 | 2015-11-24 | 株式会社日立国際電気 | 基板処理装置および固体原料補充方法 |
US20130089948A1 (en) * | 2011-10-05 | 2013-04-11 | First Solar, Inc. | Vapor transport deposition method and system for material co-deposition |
JP6111171B2 (ja) * | 2013-09-02 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP2019151894A (ja) * | 2018-03-05 | 2019-09-12 | 東芝メモリ株式会社 | 気化装置および気化ガス供給ユニット |
JP2020180354A (ja) * | 2019-04-26 | 2020-11-05 | 東京エレクトロン株式会社 | 原料ガス供給システム及び原料ガス供給方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3607135A (en) * | 1967-10-12 | 1971-09-21 | Ibm | Flash evaporating gallium arsenide |
JPH05214537A (ja) * | 1992-01-30 | 1993-08-24 | Nec Corp | 固体昇華用の気化器 |
JPH07278818A (ja) * | 1994-04-14 | 1995-10-24 | Murata Mfg Co Ltd | Cvd粉体原料用気化器 |
JP3190886B2 (ja) * | 1998-06-17 | 2001-07-23 | 日本電気株式会社 | 高分子膜の成長方法 |
JP3153190B2 (ja) * | 1998-09-21 | 2001-04-03 | 日本電気株式会社 | 高分子膜の製造装置とこの装置を用いた成膜方法 |
US20030101938A1 (en) * | 1998-10-27 | 2003-06-05 | Applied Materials, Inc. | Apparatus for the deposition of high dielectric constant films |
US6267820B1 (en) * | 1999-02-12 | 2001-07-31 | Applied Materials, Inc. | Clog resistant injection valve |
JP4315403B2 (ja) * | 1999-06-29 | 2009-08-19 | 株式会社アルバック | 金属膜の形成方法 |
KR101183109B1 (ko) * | 2002-07-30 | 2012-09-24 | 에이에스엠 아메리카, 인코포레이티드 | 캐리어 가스를 이용하는 승화 시스템 |
DE102004001884A1 (de) * | 2004-01-14 | 2005-08-11 | Applied Films Gmbh & Co. Kg | Verdampfungseinrichtung für sublimierende Materialien |
JP4537101B2 (ja) * | 2004-03-29 | 2010-09-01 | 財団法人国際科学振興財団 | 液体材料供給装置、液体材料供給装置のための制御方法 |
US7968145B2 (en) * | 2005-04-26 | 2011-06-28 | First Solar, Inc. | System and method for depositing a material on a substrate |
US7955031B2 (en) * | 2005-07-06 | 2011-06-07 | First Solar, Inc. | Material supply system and method |
JP5054902B2 (ja) * | 2005-08-03 | 2012-10-24 | 国立大学法人東京農工大学 | AlN半導体の製造方法 |
WO2009034938A1 (ja) * | 2007-09-10 | 2009-03-19 | Ulvac, Inc. | 有機材料蒸気発生装置、成膜源、成膜装置 |
JP2008260838A (ja) * | 2007-04-12 | 2008-10-30 | Toyota Motor Corp | 混合ガス供給装置及びそれを用いた燃料電池システム並びに混合ガス供給方法 |
TW200942639A (en) * | 2007-12-07 | 2009-10-16 | Jusung Eng Co Ltd | Deposition material supplying module and thin film deposition system having the same |
-
2009
- 2009-03-13 JP JP2009061587A patent/JP5361467B2/ja active Active
-
2010
- 2010-03-11 US US12/933,878 patent/US20110023784A1/en not_active Abandoned
- 2010-03-11 WO PCT/JP2010/054118 patent/WO2010104150A1/ja active Application Filing
- 2010-03-11 KR KR1020107015120A patent/KR101128348B1/ko active IP Right Grant
- 2010-03-12 TW TW099107178A patent/TWI418644B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2010104150A1 (ja) | 2010-09-16 |
JP2010219146A (ja) | 2010-09-30 |
KR101128348B1 (ko) | 2012-03-23 |
US20110023784A1 (en) | 2011-02-03 |
TW201107506A (en) | 2011-03-01 |
TWI418644B (zh) | 2013-12-11 |
KR20100115347A (ko) | 2010-10-27 |
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