JP6606547B2 - 複数の液体または固体の原材料からcvdまたはpvd装置のために蒸気を生成する蒸気発生装置および蒸気発生方法 - Google Patents
複数の液体または固体の原材料からcvdまたはpvd装置のために蒸気を生成する蒸気発生装置および蒸気発生方法 Download PDFInfo
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Description
2…熱移動ボディ
3…熱移動ボディ
4…予熱ボディ
5…供給ライン
5’…開口
6…供給ライン
6’…開口
7…供給ライン
7’…開口
8…ハウジング
9…隙間空間
10…中間空間
11…中間空間
12…中間空間
13…ガス排気開口
14…ガス注入ユニット
15…エアロゾル発生器
16…エアロゾル発生器
17…キャリアガス源
18…プロセスチャンバー
19…サセプタ
20…基板
21…真空ポンプ
22…電気コンタクト
23…コンタクト
24…コンタクト
25…コンタクト
26…反応炉ハウジング
27…熱移動ボディ
28…供給ライン
Claims (18)
- CVDまたはPVD装置における蒸気発生方法であって、
第1の原材料の液体または固体の粒子を第1の熱移動ボディ(1)の熱移動面と接触させることによって気化の熱が当該粒子に伝えられ、当該第1の熱移動ボディ(1)が第1の温度になり、そのため、第1の蒸気が生じ、当該第1の蒸気がキャリアガスによって前記第1の熱移動ボディ(1)の外に運ばれ、
第2の熱移動ボディ(2)がキャリアガスの流れの方向において前記第1の熱移動ボディ(1)の後に配置されており、前記第1の蒸気がキャリアガスによって前記第2の熱移動ボディ(2)の中に運ばれ、前記第2の熱移動ボディ(2)が第2の温度になり、
第2の原材料の固体または液体の粒子が前記第2の熱移動ボディ(2)の中に供給され、前記第2の熱移動ボディ(2)の熱移動面と当該粒子を接触させることによって気化熱が当該粒子に伝わり、従って第2の蒸気を生じ、前記第1の蒸気と共に当該第2の蒸気が前記第2の熱移動ボディ(2)の外にキャリアガスによって運ばれ、
前記第2の熱移動ボディ(2)の前記第2の温度は、前記第1の熱移動ボディ(1)の前記第1の温度に相当するかまたは前記第1の温度よりも高いことを特徴とする蒸気発生方法。 - キャリアガスの流れの方向において前記第2の熱移動ボディ(2)の後ろにある距離を持って配置された第3の熱移動ボディ(3)の中に前記第1と第2の蒸気がキャリアガスによって運ばれることを特徴とする請求項1に記載の蒸気発生方法。
- キャリアガスの流れの方向において前記第1の熱移動ボディ(1)の前に配置された予熱ボディ(4)の中でキャリアガスが加熱されることを特徴とする請求項1または2に記載の蒸気発生方法。
- 前記熱移動面が、熱移動ボディ(1,2,27)を構成する各固体発泡体のオープンセルの表面であることを特徴とする請求項1ないし3のいずれか1項に記載の蒸気発生方法。
- CVDまたはPVD装置用の蒸気発生装置であって、
第1の熱移動ボディ(1)を備えており、当該第1の熱移動ボディ(1)が第1の供給ライン(5)を経て前記第1の熱移動ボディ(1)に供給される第1の原材料の液体または固体の粒子に気化の熱を伝えるための熱移動面を有し、
第2の熱移動ボディ(2)がキャリアガスの流れの方向において前記第1の熱移動ボディ(1)の後に配置されており、前記粒子を気化させることによって生成される蒸気がキャリアガスの流れの方向においてキャリアガスによって前記第1の熱移動ボディ(1)から当該第2の熱移動ボディ(2)の中に運ばれることができ、
前記第1の熱移動ボディ(1)が第1の温度に加熱されることができ、前記第2の熱移動ボディ(2)が第2の温度に加熱されることができ、
第2の供給ライン(6)が前記第2の熱移動ボディ(2)の中に直接、または前記第2の熱移動ボディ(2)の前で開き、当該第2の供給ライン(6)を通って第2の原材料の液体または固体の粒子が前記第2の熱移動ボディ(2)の中に供給されることができ、そのため、気化熱が当該粒子に伝わることができ、前記第1の蒸気と共に当該粒子を気化させることによって生成された第2の蒸気が前記第2の熱移動ボディ(2)の外にキャリアガスによって運ばれることができ、
前記第1および第2の熱移動ボディ(1、2)が、電流を流すことによって加熱されることができる発泡体ボディであることを特徴とする蒸気発生装置。 - 前記熱移動面がオープンセルの前記発泡体ボディの壁の表面から成っており、
前記発泡体ボディが、導電性材料でできており、インチ当たり500個から200個、望ましくは100個の細孔の多孔率を有するか、および/または前記発泡体ボディの表面における全てのオープンエリアの割り当てが90%より大きいことが提供される、
ことを特徴とする請求項5に記載の蒸気発生装置。 - 第3の熱移動ボディ(3)がキャリアガスの流れの方向において前記第2の熱移動ボディ(2)の下流に配置されており、
特に前記第2の熱移動ボディ(2)と前記第3の熱移動ボディ(3)の間に隙間空間(9)が置かれる、
ことを特徴とする請求項5または6に記載の蒸気発生装置。 - キャリアガスを加熱することができる予熱ボディ(4)が、流れの方向において前記第1の熱移動ボディ(1)の前に配置されていることを特徴とする請求項5ないし7のいずれか1項に記載の蒸気発生装置。
- 予熱ボディ(4)はもちろん全ての気化ボディ(1,2,3)がオープンセルの発泡体ボディから成っており、電気的に加熱されることができることを特徴とする請求項5ないし8のいずれか1項に記載の蒸気発生装置。
- 前記第1と第2の原材料がそれぞれ供給ライン(5,6)を通って個別のエアロゾルとして供給されることができ、当該供給ライン(5,6)が2つの発泡体ボディの間の中間空間(10,11)の中に開くことを特徴とする請求項9に記載の蒸気発生装置。
- 当該蒸気発生装置がガス注入ユニット(14)とサセプタ(19)を有するCVDまたはPVD反応炉(26)の一部であり、キャリアガスによって運ばれる前記第1および第2の蒸気が前記サセプタ(19)の上に置かれた基板(20)の方向に前記ガス注入ユニット(14)を通って運ばれ、当該蒸気が化学反応または温度低下に反応して凝結し、特に真空ポンプ(21)がCVDまたはPVD反応炉の内部を空にするために提供されることを特徴とする請求項5ないし10のいずれか1項に記載の蒸気発生装置。
- 複数の熱移動ボディ(1,2,27)がキャリアガスの流れの方向に順々に配置されており、当該各熱移動ボディ(1,2,27)の前または中に個別のエアロゾル供給ライン(5,6,28)が開き、個別のエアロゾルとして前記熱移動ボディ(1,2,27)の中に前記エアロゾル供給ライン(5,6,28)を通って異なる原材料が供給されることができることを特徴とする請求項5ないし11のいずれか1項に記載の蒸気発生装置。
- 流れの方向において最後に配置された熱移動ボディ(3)のガス排気面が、基板を運ぶサセプタ(19)に直接対向して置かれており、特にプロセスチャンバーの天井を構成することを特徴とする請求項5ないし12のいずれか1項に記載の蒸気発生装置。
- 予熱ボディ(4)はもちろん全ての気化ボディ(1,2,3)がオープンセルの発泡体ボディから成っており、電気的に加熱されることができることを特徴とする請求項1ないし4のいずれか1項に記載の蒸気発生方法。
- 前記第1と第2の原材料がそれぞれ供給ライン(5,6)を通って個別のエアロゾルとして供給されることができ、当該供給ライン(5,6)が2つの発泡体ボディの間の中間空間(10,11)の中に開くことを特徴とする請求項14に記載の蒸気発生方法。
- 当該蒸気発生装置がガス注入ユニット(14)とサセプタ(19)を有するCVDまたはPVD反応炉(26)の一部であり、キャリアガスによって運ばれる前記第1および第2の蒸気が前記サセプタ(19)の上に置かれた基板(20)の方向に前記ガス注入ユニット(14)を通って運ばれ、当該蒸気が化学反応または温度低下に反応して凝結し、特に真空ポンプ(21)がCVDまたはPVD反応炉の内部を空にするために提供されることを特徴とする請求項1ないし4のいずれか1項または請求項14または15に記載の蒸気発生方法。
- 複数の熱移動ボディ(1,2,27)がキャリアガスの流れの方向に順々に配置されており、当該各熱移動ボディ(1,2,27)の前または中に個別のエアロゾル供給ライン(5,6,28)が開き、個別のエアロゾルとして前記熱移動ボディ(1,2,27)の中に前記エアロゾル供給ライン(5,6,28)を通って異なる原材料が供給されることができることを特徴とする請求項1ないし4のいずれか1項または請求項14ないし16のいずれか1項に記載の蒸気発生方法。
- 流れの方向において最後に配置された熱移動ボディ(3)のガス排気面が、基板を運ぶサセプタ(19)に直接対向して置かれており、特にプロセスチャンバーの天井を構成することを特徴とする請求項1ないし4のいずれか1項または請求項14ないし17のいずれか1項に記載の蒸気発生方法。
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PCT/EP2015/063382 WO2016000944A1 (de) | 2014-07-01 | 2015-06-16 | Vorrichtung und verfahren zum erzeugen eines dampfes aus mehreren flüssigen oder festen ausgangsstoffen für eine cvd- oder pvd-einrichtung |
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DE102017106431A1 (de) | 2017-03-24 | 2018-09-27 | Aixtron Se | Vorrichtung und Verfahren zum Herabsetzen des Wasserpartialdrucks in einer OVPD-Beschichtungseinrichtung |
WO2020244733A1 (en) * | 2019-06-03 | 2020-12-10 | Applied Materials, Inc. | Evaporator arrangement, deposition system, and evaporation method |
CN110777360B (zh) * | 2019-11-01 | 2020-09-22 | 西北工业大学 | 一种化学气相沉积负压状态下粉末前驱体的进料装置 |
CN110983300B (zh) * | 2019-12-04 | 2023-06-20 | 江苏菲沃泰纳米科技股份有限公司 | 镀膜设备及其应用 |
US20230037208A1 (en) * | 2019-12-11 | 2023-02-02 | Lam Research Corporation | Liquid precursor vaporizer |
CN111996501B (zh) * | 2020-07-27 | 2022-03-04 | 江苏菲沃泰纳米科技股份有限公司 | 原料气化装置和镀膜设备及其气化方法 |
CN112626620B (zh) * | 2020-12-13 | 2022-05-03 | 湖南德智新材料有限公司 | 一种用于氢化物气相外延生长氮化镓的蒸发器 |
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US2447789A (en) | 1945-03-23 | 1948-08-24 | Polaroid Corp | Evaporating crucible for coating apparatus |
US4885211A (en) | 1987-02-11 | 1989-12-05 | Eastman Kodak Company | Electroluminescent device with improved cathode |
US4769292A (en) | 1987-03-02 | 1988-09-06 | Eastman Kodak Company | Electroluminescent device with modified thin film luminescent zone |
GB2230792A (en) * | 1989-04-21 | 1990-10-31 | Secr Defence | Multiple source physical vapour deposition. |
JPH07310185A (ja) * | 1994-05-12 | 1995-11-28 | Hitachi Ltd | Cvdガス供給装置 |
US5835677A (en) * | 1996-10-03 | 1998-11-10 | Emcore Corporation | Liquid vaporizer system and method |
JP2000068055A (ja) | 1998-08-26 | 2000-03-03 | Tdk Corp | 有機el素子用蒸発源、この有機el素子用蒸発源を用いた有機el素子の製造装置および製造方法 |
US6123993A (en) * | 1998-09-21 | 2000-09-26 | Advanced Technology Materials, Inc. | Method and apparatus for forming low dielectric constant polymeric films |
US6787181B2 (en) * | 2001-10-26 | 2004-09-07 | Symetrix Corporation | Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth |
US20050109281A1 (en) * | 2002-03-22 | 2005-05-26 | Holger Jurgensen | Process for coating a substrate, and apparatus for carrying out the process |
KR100474970B1 (ko) * | 2002-07-18 | 2005-03-10 | 주식회사 아이피에스 | 박막증착장치용 기화기 |
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JP4255742B2 (ja) * | 2003-04-25 | 2009-04-15 | 富士通株式会社 | 成膜装置 |
JP2005057193A (ja) * | 2003-08-07 | 2005-03-03 | Shimadzu Corp | 気化器 |
US7238389B2 (en) * | 2004-03-22 | 2007-07-03 | Eastman Kodak Company | Vaporizing fluidized organic materials |
JP4911555B2 (ja) * | 2005-04-07 | 2012-04-04 | 国立大学法人東北大学 | 成膜装置および成膜方法 |
US20070194470A1 (en) * | 2006-02-17 | 2007-08-23 | Aviza Technology, Inc. | Direct liquid injector device |
KR100851439B1 (ko) * | 2007-02-01 | 2008-08-11 | 주식회사 테라세미콘 | 소스가스 공급장치 |
WO2012175126A1 (en) | 2011-06-22 | 2012-12-27 | Aixtron Se | Method and apparatus for vapor deposition |
WO2012175128A1 (en) | 2011-06-22 | 2012-12-27 | Aixtron Se | Vapor deposition system and supply head |
DE102011051261A1 (de) | 2011-06-22 | 2012-12-27 | Aixtron Se | Verfahren und Vorrichtung zum Abscheiden von OLEDs insbesondere Verdampfungsvorrichtung dazu |
EP2723912B1 (en) | 2011-06-22 | 2018-05-30 | Aixtron SE | Vapor deposition material source and method for making same |
DE102011051260A1 (de) | 2011-06-22 | 2012-12-27 | Aixtron Se | Verfahren und Vorrichtung zum Abscheiden von OLEDs |
WO2013181521A2 (en) * | 2012-05-31 | 2013-12-05 | Advanced Technology Materials, Inc. | Source reagent-based delivery of fluid with high material flux for batch deposition |
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TW201610194A (zh) | 2016-03-16 |
TWI683019B (zh) | 2020-01-21 |
KR20170026531A (ko) | 2017-03-08 |
US20170114445A1 (en) | 2017-04-27 |
CN106661718B (zh) | 2019-04-16 |
JP2017521563A (ja) | 2017-08-03 |
DE102014109195A1 (de) | 2016-01-07 |
CN106661718A (zh) | 2017-05-10 |
WO2016000944A1 (de) | 2016-01-07 |
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