JP5355586B2 - 接合構造体の接合方法 - Google Patents
接合構造体の接合方法 Download PDFInfo
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- JP5355586B2 JP5355586B2 JP2010538241A JP2010538241A JP5355586B2 JP 5355586 B2 JP5355586 B2 JP 5355586B2 JP 2010538241 A JP2010538241 A JP 2010538241A JP 2010538241 A JP2010538241 A JP 2010538241A JP 5355586 B2 JP5355586 B2 JP 5355586B2
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Description
図1と図2は本発明の実施の形態1を示す。
( 放熱性 ) = ( 熱伝導率 ) ÷ ( 拡散防止層の厚み ) 第1式
で得ることができる。
図3と図4は本発明の実施の形態2を示す。
Claims (4)
- 半導体素子を電極にBiを主成分とする接合材料を介して接合するに際し、
前記半導体素子の前記電極に対向する表面の側に、0.3μm〜0.9μmのTa層を形成し、
前記Ta層の前記電極に対向する表面の側に、0.3μm〜2μmのCu層を形成し、
前記Cu層を前記接合材料に接触させた状態で加熱して前記電極に、前記接合材料と、前記Cu層、前記Ta層を介して前記半導体素子を接合する
接合構造体の接合方法。 - 半導体素子を電極にBiを主成分とする接合材料を介して接合するに際し、
前記半導体素子の前記電極に対向する表面の側に、0.3μm〜0.9μmのTa層を形成し、
前記Ta層の前記電極に対向する表面の側に、0.3μm〜2μmのCu層を形成し、
前記Cu層の前記電極の側の面に、前記Cu層に比べて前記接合材料との接触角が小さい金属の中間層を形成し、
前記中間層を前記接合材料に接触させた状態で加熱して前記電極に、前記接合材料と
前記中間層と、前記Cu層、および前記Ta層を介して前記半導体素子を接合する
接合構造体の接合方法。 - 前記中間層は、Ag層である請求項2記載の接合構造体の接合方法。
- 接合前の前記Ag層の厚さが、0.2μm〜4.5μmである
請求項3記載の接合構造体の接合方法。
Priority Applications (1)
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JP2010538241A JP5355586B2 (ja) | 2009-04-30 | 2010-04-27 | 接合構造体の接合方法 |
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JP2009110524 | 2009-04-30 | ||
JP2009110524 | 2009-04-30 | ||
PCT/JP2010/002999 WO2010125800A1 (ja) | 2009-04-30 | 2010-04-27 | 接合構造体と接合構造体の接合方法 |
JP2010538241A JP5355586B2 (ja) | 2009-04-30 | 2010-04-27 | 接合構造体の接合方法 |
Publications (2)
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JPWO2010125800A1 JPWO2010125800A1 (ja) | 2012-10-25 |
JP5355586B2 true JP5355586B2 (ja) | 2013-11-27 |
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US (1) | US20110042817A1 (ja) |
JP (1) | JP5355586B2 (ja) |
CN (1) | CN102047398B (ja) |
WO (1) | WO2010125800A1 (ja) |
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JP5723225B2 (ja) * | 2011-06-03 | 2015-05-27 | パナソニック株式会社 | 接合構造体 |
CN103084750B (zh) * | 2013-02-25 | 2016-07-06 | 重庆科技学院 | 一种电子封装用高熔点无铅钎料的制备方法 |
JP7068914B2 (ja) | 2018-04-26 | 2022-05-17 | 昭和電工株式会社 | 断熱性遮蔽部材及びそれを備えた単結晶製造装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61220344A (ja) * | 1985-03-26 | 1986-09-30 | Nec Corp | 半導体装置の製造方法 |
JPH01209730A (ja) * | 1988-02-18 | 1989-08-23 | Sanyo Electric Co Ltd | 半導体装置の電極構造 |
JPH07176547A (ja) * | 1993-12-17 | 1995-07-14 | Hitachi Ltd | 半導体チップとその製法 |
JP2001353590A (ja) * | 2000-06-12 | 2001-12-25 | Murata Mfg Co Ltd | はんだ組成物およびはんだ付け物品 |
JP2005026612A (ja) * | 2003-07-02 | 2005-01-27 | Denso Corp | 半導体装置 |
JP2008161882A (ja) * | 2006-12-27 | 2008-07-17 | Matsushita Electric Ind Co Ltd | 電子部品、接合構造体および電子機器 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005286274A (ja) * | 2004-03-31 | 2005-10-13 | Uchihashi Estec Co Ltd | はんだ付け方法 |
JP2006028242A (ja) * | 2004-07-13 | 2006-02-02 | Tomoegawa Paper Co Ltd | 電子部品用接着テープおよび電子部品 |
JP5224430B2 (ja) * | 2006-03-17 | 2013-07-03 | 株式会社豊田中央研究所 | パワー半導体モジュール |
US8193555B2 (en) * | 2009-02-11 | 2012-06-05 | Megica Corporation | Image and light sensor chip packages |
-
2010
- 2010-04-27 CN CN201080001751.5A patent/CN102047398B/zh not_active Expired - Fee Related
- 2010-04-27 JP JP2010538241A patent/JP5355586B2/ja not_active Expired - Fee Related
- 2010-04-27 US US12/935,381 patent/US20110042817A1/en not_active Abandoned
- 2010-04-27 WO PCT/JP2010/002999 patent/WO2010125800A1/ja active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61220344A (ja) * | 1985-03-26 | 1986-09-30 | Nec Corp | 半導体装置の製造方法 |
JPH01209730A (ja) * | 1988-02-18 | 1989-08-23 | Sanyo Electric Co Ltd | 半導体装置の電極構造 |
JPH07176547A (ja) * | 1993-12-17 | 1995-07-14 | Hitachi Ltd | 半導体チップとその製法 |
JP2001353590A (ja) * | 2000-06-12 | 2001-12-25 | Murata Mfg Co Ltd | はんだ組成物およびはんだ付け物品 |
JP2005026612A (ja) * | 2003-07-02 | 2005-01-27 | Denso Corp | 半導体装置 |
JP2008161882A (ja) * | 2006-12-27 | 2008-07-17 | Matsushita Electric Ind Co Ltd | 電子部品、接合構造体および電子機器 |
Also Published As
Publication number | Publication date |
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CN102047398B (zh) | 2014-04-02 |
JPWO2010125800A1 (ja) | 2012-10-25 |
CN102047398A (zh) | 2011-05-04 |
US20110042817A1 (en) | 2011-02-24 |
WO2010125800A1 (ja) | 2010-11-04 |
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