JP5294517B2 - アッド‐オン層形成方法 - Google Patents
アッド‐オン層形成方法 Download PDFInfo
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- JP5294517B2 JP5294517B2 JP2011218346A JP2011218346A JP5294517B2 JP 5294517 B2 JP5294517 B2 JP 5294517B2 JP 2011218346 A JP2011218346 A JP 2011218346A JP 2011218346 A JP2011218346 A JP 2011218346A JP 5294517 B2 JP5294517 B2 JP 5294517B2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Semiconductor Memories (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Bipolar Integrated Circuits (AREA)
- Hall/Mr Elements (AREA)
Description
「ASIC」は「特殊な集積回路の応用」を意味する。「SoC」は「チップ上のシステム」を意味し、「SoCs」はSoCの複数形を意味する。SoCはASICであってもよいが、必ずしもそうである必要はない。ASICはSoCであってもよいが、必ずしもそうである必要はない。
SOI層を含み、ここで半導体基板及びSOI層は堆積され、そして互いに接合されるところの三次元集積回路を意味する。
MOSFET VMFLD、MESFET VMEFLD、ダイオードVDFLD、抵抗VRFLD、キャパシタVCFLD、バイポーラVBFLD及びサイリスタVTFLDである。
103:ベース基板
104:単結晶半導体装置
111、112、113:FLD
120:中間接合層
121、122:下部電極
122、122a:上部電極
123:中間電極
124、128:SOI層
123a、123f、123h、131:接点
123a、123f、123h、131:接点(上記の相手)
123b:エッチング停止
123c:ゲート
123j:サイリスタ電極
123i:トランジスタ電極
124a:エミッター
124b:ベース
124c、124d:コレクター
124e:浮遊ソース
131:接点/バイアス
132:相互接続ライン
133、133a:誘電材料
134:境界
135:隔離
138、133c:誘電層
142:共有ウエル
143:基板
145:上パッド
146:下パッド
151、152、153:ILD層
161c:トランジスタ
171:ハードマスク
172:ゲート
173:エッチングマスク
180:ベース基板
182:スペーサー
183、183b、183c、189:誘電層
184:エッチング停止層
190:SOI基板
191:取り外し層
201、203:ベース半導体基板
202、204、241、242:誘電層
211、212:保持装置
243:ウエル
255:ビア
301a、301b:溶融/反溶融電極
310:溶融/反溶融層
323:消去ゲート
400:DRAM
412:補正領域(OECA)
413a、413b、413c、413d:ブロックFLDIC層
441:チップ
500:EEPROM
600:VMFLD
700、710:強誘電膜
730:FRAMセル
760:絶縁体珪素型FRAM(MFMIS)
770:センスアンプ
800:セル構造
810:MJT
850:MRAMセル
910:RSPCF
Claims (7)
- 第一半導体基板の取り外し層の形成、取り外し層の上の第一半導体基板に多くのドーピング領域の形成、ここで多くのドーピング層の形成は、第一電導型を有するように、ドーピングされ、取り外し層の上の第一半導体基板の第一ドーピング層の形成、第一電導型に対する第二電導型を有するようにドーピングされ、第一ドーピング層の上の第一半導体基板に最低中間ドーピング層の形成、及び中間ドーピング層上の第一半導体基板に最低第三ドーピング層の形成からなり、第三ドーピング層上に第一の電導性ブランケット層の形成、第一電導ブランケット層上に第二の電導性ブランケット層の形成、及び第二電導性ブランケット層が第二半導体基板の対応する電導性上部層と接触するように、第一半導体基板を第二半導体基板への取り付け、からなる堆積可能なアッド‐オン層形成方法。
- 第一ドーピング層が露出するように第一ドーピング層を配置した側に対向する取り外し層の側の第一基板の一部を除去することから更になる請求項1の方法。
- 第一ドーピング層の露出部分上に第三の電導性ブランケット層を形成することから更になる請求項2の方法。
- 第三の電導性ブランケット層の一部をエッチングし、これにより下にある多くのドーピング領域の表面を露出させ、第三の電導性ブランケット層の非エッチング部分によりマスクされない多くのドーピング層の露出部分をエッチングし、これにより多くの個別ドープされたスタック構造を形成し、そして個別ドープされたスタック構造によりマスクされない第一電導性ブランケット層の部分を露出することから更になる請求項3の方法。
- 誘電材料の第一層が第三のドープされたスタック層、及び各個別ドープされたスタックの中間ドーピング層の一部を取り囲むように、そして中間ドーピング層の最低一部が露出されるように個別ドープされたスタック構造の間に誘電材料の第一層を配置し、多くの個別ドープされたスタック構造の最低一つの露出中間ドーピング層へ電気的に接続される最低一つの電導ラインを形成することから更になる請求項4の方法。
- 第一層の誘電材料上に第二層の誘電材料を配置することから更になる請求項5の方法。
- 最低一つのドープされたスタック構造の最低一部の周りにゲート誘電層を形成し、そしてゲート誘電層の最低一部に隣接してゲート電極を形成することから更になる、請求項4の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20030040920 | 2003-06-24 | ||
KR10-2003-0040920 | 2003-06-24 | ||
KR10-2003-0047515 | 2003-07-12 | ||
KR1020030047515A KR100904771B1 (ko) | 2003-06-24 | 2003-07-12 | 3차원 집적회로 구조 및 제작 방법 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006517574A Division JP5202842B2 (ja) | 2003-06-24 | 2004-06-23 | 三次元集積回路構造及びこれを作る方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012064950A JP2012064950A (ja) | 2012-03-29 |
JP5294517B2 true JP5294517B2 (ja) | 2013-09-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011218346A Expired - Fee Related JP5294517B2 (ja) | 2003-06-24 | 2011-09-30 | アッド‐オン層形成方法 |
JP2012135533A Pending JP2012253358A (ja) | 2003-06-24 | 2012-06-15 | 半導体構造 |
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JP2012135533A Pending JP2012253358A (ja) | 2003-06-24 | 2012-06-15 | 半導体構造 |
Country Status (3)
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JP (2) | JP5294517B2 (ja) |
KR (1) | KR100904771B1 (ja) |
CN (1) | CN1809914B (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100989546B1 (ko) * | 2008-05-21 | 2010-10-25 | 이상윤 | 3차원 반도체 장치의 제조 방법 |
KR100975332B1 (ko) * | 2008-05-30 | 2010-08-12 | 이상윤 | 반도체 장치 및 그 제조 방법 |
KR100791071B1 (ko) | 2006-07-04 | 2008-01-02 | 삼성전자주식회사 | 일회 프로그래머블 소자, 이를 구비하는 전자시스템 및 그동작 방법 |
KR101468595B1 (ko) * | 2008-12-19 | 2014-12-04 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조 방법 |
US8395191B2 (en) * | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
KR101669244B1 (ko) | 2010-06-08 | 2016-10-25 | 삼성전자주식회사 | 에스램 소자 및 그 제조방법 |
KR101360947B1 (ko) * | 2011-10-27 | 2014-02-10 | 윤재만 | 반도체 메모리 장치 |
JP2013161878A (ja) * | 2012-02-02 | 2013-08-19 | Renesas Electronics Corp | 半導体装置、および半導体装置の製造方法 |
JP6128787B2 (ja) | 2012-09-28 | 2017-05-17 | キヤノン株式会社 | 半導体装置 |
US9112047B2 (en) * | 2013-02-28 | 2015-08-18 | Freescale Semiconductor, Inc. | Split gate non-volatile memory (NVM) cell and method therefor |
US9123546B2 (en) * | 2013-11-14 | 2015-09-01 | Taiwan Semiconductor Manufacturing Company Limited | Multi-layer semiconductor device structures with different channel materials |
CN104752393B (zh) * | 2013-12-27 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | Mos管电容器的布线结构及布线方法 |
US20150348874A1 (en) * | 2014-05-29 | 2015-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC Interconnect Devices and Methods of Forming Same |
WO2015195082A1 (en) | 2014-06-16 | 2015-12-23 | Intel Corporation | Method for direct integration of memory die to logic die without use of through silicon vias (tsv) |
SG11201608947SA (en) * | 2014-06-16 | 2016-11-29 | Intel Corp | Embedded memory in interconnect stack on silicon die |
US9893278B1 (en) * | 2016-08-08 | 2018-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Embedded memory device between noncontigous interconnect metal layers |
JP2018026518A (ja) * | 2016-08-12 | 2018-02-15 | 東芝メモリ株式会社 | 半導体記憶装置 |
KR102332456B1 (ko) * | 2017-08-31 | 2021-12-02 | 마이크론 테크놀로지, 인크 | 두 개의 트랜지스터들과 하나의 캐패시터를 갖는 메모리 셀을 가지며, 기준 전압과 결합된 트랜지스터들의 바디 영역들을 갖는 장치 |
US10930595B2 (en) | 2017-09-28 | 2021-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Standard cells having via rail and deep via structures |
KR102614728B1 (ko) * | 2018-04-04 | 2023-12-19 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 및 그 제조 방법 |
US11374003B2 (en) * | 2019-04-12 | 2022-06-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit |
US11049880B2 (en) * | 2019-08-02 | 2021-06-29 | Sandisk Technologies Llc | Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same |
CN112635461B (zh) * | 2020-12-08 | 2024-04-16 | 中国科学院微电子研究所 | 一种三维存算电路结构及其制备方法 |
CN113725301B (zh) * | 2021-08-31 | 2024-07-02 | 上海积塔半导体有限公司 | 垂直型存储器件及其制备方法 |
CN114709168A (zh) * | 2022-03-10 | 2022-07-05 | 长鑫存储技术有限公司 | 半导体结构及其制备方法 |
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DE4433845A1 (de) | 1994-09-22 | 1996-03-28 | Fraunhofer Ges Forschung | Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung |
US6194290B1 (en) * | 1998-03-09 | 2001-02-27 | Intersil Corporation | Methods for making semiconductor devices by low temperature direct bonding |
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JP2012253358A (ja) | 2012-12-20 |
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