JP5280434B2 - 半導体デバイスにおける分離層の形成 - Google Patents
半導体デバイスにおける分離層の形成 Download PDFInfo
- Publication number
- JP5280434B2 JP5280434B2 JP2010506376A JP2010506376A JP5280434B2 JP 5280434 B2 JP5280434 B2 JP 5280434B2 JP 2010506376 A JP2010506376 A JP 2010506376A JP 2010506376 A JP2010506376 A JP 2010506376A JP 5280434 B2 JP5280434 B2 JP 5280434B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mesa
- forming
- conductor layer
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 238000000926 separation method Methods 0.000 title claims description 12
- 230000015572 biosynthetic process Effects 0.000 title description 5
- 238000000034 method Methods 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000011810 insulating material Substances 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 197
- 239000000463 material Substances 0.000 description 27
- 238000004519 manufacturing process Methods 0.000 description 14
- 125000006850 spacer group Chemical group 0.000 description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 8
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910003468 tantalcarbide Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 206010010144 Completed suicide Diseases 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- AGDGPIPRLIPOPB-UHFFFAOYSA-N [La].[Ta] Chemical compound [La].[Ta] AGDGPIPRLIPOPB-UHFFFAOYSA-N 0.000 description 1
- SXSVTGQIXJXKJR-UHFFFAOYSA-N [Mg].[Ti] Chemical compound [Mg].[Ti] SXSVTGQIXJXKJR-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- RQQRTMXCTVKCEK-UHFFFAOYSA-N [Ta].[Mg] Chemical compound [Ta].[Mg] RQQRTMXCTVKCEK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- DRIUWMIAOYIBGN-UHFFFAOYSA-N lanthanum titanium Chemical compound [Ti][La] DRIUWMIAOYIBGN-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Description
図1には、ウエハ101の側断面図を示す。示した実施形態では、ウエハ101は、SOI(semiconductor on insulator)構成を有する。示した実施形態では、ウエハ101は、基板層103(例えば、シリコン、シリコンゲルマニウムからなる)、層103の上に配置された絶縁体層105(例えば、二酸化シリコン)、絶縁体層105の上に配置された半導体層107(例えば、単結晶シリコン)、および層107の上に配置されたゲート誘電体層109を備える。一実施形態では、ゲート誘電体層109は、酸化プロセスによって層107から成長させられる。他の実施形態では、誘電体層109は、誘電体(例えば、ハフニウム酸化物または他の金属酸化物などの高k誘電体)を堆積させた層である場合がある。ウエハ101は、ゲート誘電体層109の上に配置された導体ゲート電極層111を含む。一実施形態では、層111は導体金属材料である(例えば、タンタル炭化物、チタン炭化物、タンタルマグネシウム炭化物、チタンマグネシウム炭化物、チタンランタン炭化物、タンタルランタン炭化物、チタンシリコン窒化物、タンタルシリコン窒化物、タンタル窒化物、タンタルシリコン窒化物、チタン窒化物、またはモリブデン窒化物)。一実施形態では、層111は5〜10nm(50〜100オングストローム)の範囲の厚みを有するが、他の実施形態では他の厚みを有する場合がある。層113は層111の上に配置される。一実施形態では、層113は後に分離層および研磨停止層として利用される。一実施形態では、層113は、10〜15nm(100〜150オングストローム)の範囲の厚みを有し、窒化物からなるが、他の実施形態では他の厚みを有するか、他の材料からなるか、またはその両方である場合がある。
図12には、ソース/ドレイン領域(MOSFET用の電流端子領域)が形成された後の、ウエハ101の側断面図を示す。それらの領域へドーパントを注入することによって、メサ201にはソース/ドレイン領域1209,1211が形成され、メサ203にはソース/ドレイン領域1213,1215が形成される。例えば、トランジスタ1201がN−チャネルトランジスタであり、トランジスタ1203がP−チャネルトランジスタである場合、メサ201の層107におけるソース/ドレイン領域1209,1211にはn型のドーパント(例えば、リン、ヒ素)が注入され、メサ203の層107,601のソース/ドレイン領域1213,1215にはp型のドーパント(例えば、ホウ素)が注入される。
Claims (4)
- 半導体デバイスを形成する方法において、
半導体層の上方に第1のゲート誘電体層を形成する工程と、
第1のゲート誘電体層の上方に第1の導体層を形成する工程と、
第1の導体層の上方に第1の分離層を形成する工程と、
第1の分離層を形成する工程の後に、半導体層に第1のメサと第2のメサとを分離するトレンチを形成する工程であって、第1のメサおよび第2のメサは各々、第1のゲート誘電体層の一部、第1の導体層の一部、第1の分離層の一部、および半導体層の一部を含む工程と、
第1の導体層の上面を越える高さまでトレンチに絶縁材料を充填する工程と、
第2のメサに含まれる第1の導体層の前記一部を第2のメサから除去する工程と、
第2のメサに含まれる第1の導体層の前記一部を第2のメサから除去する工程の後に、第1のメサに含まれる第1の分離層の前記一部の上方および第2のメサの上方に第2の導体層を形成する工程と、
平坦化を行って、第1のメサの上方から第2の導体層を除去する工程と、
第1のメサに第1の種類の第1のトランジスタを形成し、第2のメサに第2の種類の第2のトランジスタを形成する工程と、
第2の導体層を形成する工程より前に、第2のメサに含まれる第1のゲート誘電体層の前記一部を第2のメサから除去する工程と、
第2のメサに含まれる第1のゲート誘電体層の前記一部を第2のメサから除去する工程の後、かつ、第2の導体層を形成する工程より前に、第2のメサの上に第2の半導体層をエピタキシャル成長によって成長させる工程と、からなる方法。 - 第2の導体層を形成する工程において、第2の導体層は金属を含む請求項1に記載の方法。
- 第1の導体層を形成する工程において、第1の導体層は第2の導体層の金属とは異なる種類の金属を含む請求項2に記載の方法。
- 第1のメサに含まれる半導体層の前記一部が第2のメサに含まれる半導体層の前記一部とは異なる導電型を有するように、選択的に半導体層のドーピングを行う工程を含む請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/738,683 US8039339B2 (en) | 2007-04-23 | 2007-04-23 | Separate layer formation in a semiconductor device |
US11/738,683 | 2007-04-23 | ||
PCT/US2008/059352 WO2008130818A1 (en) | 2007-04-23 | 2008-04-04 | Separate layer formation in a semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010525609A JP2010525609A (ja) | 2010-07-22 |
JP2010525609A5 JP2010525609A5 (ja) | 2011-05-26 |
JP5280434B2 true JP5280434B2 (ja) | 2013-09-04 |
Family
ID=39872628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010506376A Expired - Fee Related JP5280434B2 (ja) | 2007-04-23 | 2008-04-04 | 半導体デバイスにおける分離層の形成 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8039339B2 (ja) |
JP (1) | JP5280434B2 (ja) |
CN (1) | CN101675512A (ja) |
TW (1) | TWI442511B (ja) |
WO (1) | WO2008130818A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016101545B4 (de) | 2016-01-28 | 2020-10-08 | Infineon Technologies Dresden Gmbh | Verfahren zum herstellen einer halbleitervorrichtung mit silicidschichten und eine halbleitervorrichtung |
CN113078067B (zh) * | 2021-03-30 | 2023-04-28 | 电子科技大学 | 一种沟槽分离栅器件的制造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5447874A (en) * | 1994-07-29 | 1995-09-05 | Grivna; Gordon | Method for making a semiconductor device comprising a dual metal gate using a chemical mechanical polish |
US6013551A (en) * | 1997-09-26 | 2000-01-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacture of self-aligned floating gate, flash memory cell and device manufactured thereby |
US6027961A (en) * | 1998-06-30 | 2000-02-22 | Motorola, Inc. | CMOS semiconductor devices and method of formation |
US6204103B1 (en) * | 1998-09-18 | 2001-03-20 | Intel Corporation | Process to make complementary silicide metal gates for CMOS technology |
US6262456B1 (en) * | 1998-11-06 | 2001-07-17 | Advanced Micro Devices, Inc. | Integrated circuit having transistors with different threshold voltages |
JP3613113B2 (ja) * | 2000-01-21 | 2005-01-26 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US6444512B1 (en) * | 2000-06-12 | 2002-09-03 | Motorola, Inc. | Dual metal gate transistors for CMOS process |
JP2002009171A (ja) * | 2000-06-22 | 2002-01-11 | Fujitsu Ltd | 半導体装置の製造方法 |
US6627510B1 (en) * | 2002-03-29 | 2003-09-30 | Sharp Laboratories Of America, Inc. | Method of making self-aligned shallow trench isolation |
TW544840B (en) * | 2002-06-27 | 2003-08-01 | Intelligent Sources Dev Corp | A stack-type DRAM memory structure and its manufacturing method |
US6846734B2 (en) * | 2002-11-20 | 2005-01-25 | International Business Machines Corporation | Method and process to make multiple-threshold metal gates CMOS technology |
US6919647B2 (en) * | 2003-07-03 | 2005-07-19 | American Semiconductor, Inc. | SRAM cell |
US7018887B1 (en) * | 2004-03-01 | 2006-03-28 | Advanced Micro Devices, Inc. | Dual metal CMOS transistors with silicon-metal-silicon stacked gate electrode |
US7157378B2 (en) * | 2004-07-06 | 2007-01-02 | Intel Corporation | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode |
US7422936B2 (en) * | 2004-08-25 | 2008-09-09 | Intel Corporation | Facilitating removal of sacrificial layers via implantation to form replacement metal gates |
US7074664B1 (en) * | 2005-03-29 | 2006-07-11 | Freescale Semiconductor, Inc. | Dual metal gate electrode semiconductor fabrication process and structure thereof |
-
2007
- 2007-04-23 US US11/738,683 patent/US8039339B2/en not_active Expired - Fee Related
-
2008
- 2008-04-04 CN CN200880013173A patent/CN101675512A/zh active Pending
- 2008-04-04 WO PCT/US2008/059352 patent/WO2008130818A1/en active Application Filing
- 2008-04-04 JP JP2010506376A patent/JP5280434B2/ja not_active Expired - Fee Related
- 2008-04-18 TW TW097114353A patent/TWI442511B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200908211A (en) | 2009-02-16 |
US8039339B2 (en) | 2011-10-18 |
TWI442511B (zh) | 2014-06-21 |
WO2008130818A1 (en) | 2008-10-30 |
US20080261374A1 (en) | 2008-10-23 |
CN101675512A (zh) | 2010-03-17 |
JP2010525609A (ja) | 2010-07-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI570915B (zh) | 半導體裝置以及製造鰭式場效電晶體裝置的方法 | |
TWI383490B (zh) | 半導體裝置之製造方法 | |
US9673277B2 (en) | Methods and apparatus for forming horizontal gate all around device structures | |
JP5173582B2 (ja) | 半導体装置 | |
US7701010B2 (en) | Method of fabricating transistor including buried insulating layer and transistor fabricated using the same | |
US8790991B2 (en) | Method and structure for shallow trench isolation to mitigate active shorts | |
TW202013519A (zh) | 半導體裝置與其形成方法 | |
TWI594332B (zh) | 半導體裝置的製作方法 | |
US20100258869A1 (en) | Semiconductor device and manufacturing method thereof | |
TWI827712B (zh) | 半導體裝置與其形成方法 | |
US9865709B2 (en) | Selectively deposited spacer film for metal gate sidewall protection | |
JPWO2006068027A1 (ja) | 半導体装置およびその製造方法 | |
TWI724285B (zh) | 半導體裝置及其製造方法 | |
TW202410163A (zh) | 奈米結構場效電晶體及其製造方法 | |
TWI822111B (zh) | 半導體裝置與其形成方法 | |
JP5280434B2 (ja) | 半導体デバイスにおける分離層の形成 | |
TWI807706B (zh) | 半導體裝置及其製造方法 | |
JP2013045953A (ja) | 半導体装置およびその製造方法 | |
US9337293B2 (en) | Semiconductor device having electrode and manufacturing method thereof | |
JP2008288329A (ja) | 半導体装置 | |
TWI802217B (zh) | 半導體裝置和製造方法 | |
US20230008994A1 (en) | Semiconductor device with dielectric layer and method of forming the same | |
US20230064457A1 (en) | Nanostructure Device and Method of Forming Thereof | |
JP3966102B2 (ja) | 半導体装置の製造方法 | |
TWI521709B (zh) | 半導體結構及積體電路之製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110331 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110331 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120227 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121130 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130328 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130423 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130522 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5280434 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |