JP5268752B2 - 半導体パッケージ及びその製造方法 - Google Patents
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Description
110 導電性パッド
115,124,155 絶縁膜
120 半導体基板
122 穴
130 絶縁層
135 開口部
140 メタルポスト
145,152 シード層
150 外層回路
160 ハンダバンプ
Claims (7)
- 上面に導電性パッドが形成された半導体基板と、
前記導電性パッドが露出するように前記半導体基板の前記上面に形成された絶縁膜と、
前記半導体基板の前記上面の側に前記導電性パッドと前記絶縁膜とを覆うように形成された絶縁層と、
前記絶縁層の上面及び前記半導体基板の下面にそれぞれ形成された外層回路と、
前記導電性パッド、前記半導体基板、及び前記絶縁層を貫通することにより、前記導電性パッド、前記絶縁層の上面に形成された前記外層回路、及び前記半導体基板の下面に形成された前記外層回路に電気的に接続されるメタルポストと、
を備える半導体パッケージ。 - 前記外層回路に形成されたハンダバンプをさらに含む請求項1に記載の半導体パッケージ。
- 前記メタルポストは、シード層を介して前記導電性パッドに電気的に接続されることを特徴とする請求項1または2に記載の半導体パッケージ。
- 半導体基板の上面に、導電性パッド及び前記導電性パッドを露出させる絶縁膜を形成する工程と、
前記導電性パッドを貫通して前記半導体基板の前記上面に穴を形成する工程と、
前記導電性パッドと前記絶縁膜とを覆うように、前記半導体基板の前記上面の側に絶縁層を形成する工程と、
前記絶縁層を貫通するように、前記導電性パッドの位置に対応する開口部を前記絶縁層に形成する工程と、
前記導電性パッドに電気的に接続されるように、前記穴及び前記開口部の内部に導電性物質を充填してメタルポストを形成する工程と、
前記メタルポストと電気的に接続されるように、前記絶縁層の上面及び前記半導体基板の下面に外層回路をそれぞれ形成する工程と、
を含む半導体パッケージの製造方法。 - 前記穴を形成する工程は、
前記穴の深さが前記半導体基板の厚さ以下になるように行われ、
前記外層回路を形成する工程の前に、
前記メタルポストが露出するように前記半導体基板の一部を除去する工程をさらに含むことを特徴とする請求項4に記載の半導体パッケージの製造方法。 - 前記外層回路を形成する工程の後に、
前記外層回路にハンダバンプを形成する工程をさらに含む請求項4または5に記載の半導体パッケージの製造方法。 - 前記穴にシード層を形成する工程をさらに含み、
前記メタルポストを形成する工程は、前記シード層を介して前記導電性パッドに電気的に接続されるように前記メタルポストを形成することを特徴とする請求項4から6のいずれか一項に記載の半導体パッケージの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020080103181A KR101002680B1 (ko) | 2008-10-21 | 2008-10-21 | 반도체 패키지 및 그 제조 방법 |
KR10-2008-0103181 | 2008-10-21 |
Publications (2)
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JP2010103467A JP2010103467A (ja) | 2010-05-06 |
JP5268752B2 true JP5268752B2 (ja) | 2013-08-21 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009089606A Expired - Fee Related JP5268752B2 (ja) | 2008-10-21 | 2009-04-01 | 半導体パッケージ及びその製造方法 |
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US (2) | US8159071B2 (ja) |
JP (1) | JP5268752B2 (ja) |
KR (1) | KR101002680B1 (ja) |
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JP5644242B2 (ja) | 2009-09-09 | 2014-12-24 | 大日本印刷株式会社 | 貫通電極基板及びその製造方法 |
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US10276402B2 (en) * | 2016-03-21 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package and manufacturing process thereof |
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-
2008
- 2008-10-21 KR KR1020080103181A patent/KR101002680B1/ko active IP Right Grant
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2009
- 2009-03-17 US US12/405,776 patent/US8159071B2/en not_active Expired - Fee Related
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KR20100043920A (ko) | 2010-04-29 |
KR101002680B1 (ko) | 2010-12-21 |
US8409981B2 (en) | 2013-04-02 |
JP2010103467A (ja) | 2010-05-06 |
US20100096749A1 (en) | 2010-04-22 |
US8159071B2 (en) | 2012-04-17 |
US20120164825A1 (en) | 2012-06-28 |
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