JP5247008B2 - 透過型の表示装置 - Google Patents
透過型の表示装置 Download PDFInfo
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- JP5247008B2 JP5247008B2 JP2006157996A JP2006157996A JP5247008B2 JP 5247008 B2 JP5247008 B2 JP 5247008B2 JP 2006157996 A JP2006157996 A JP 2006157996A JP 2006157996 A JP2006157996 A JP 2006157996A JP 5247008 B2 JP5247008 B2 JP 5247008B2
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- 230000005540 biological transmission Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 63
- 239000003990 capacitor Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 14
- 239000010410 layer Substances 0.000 description 95
- 239000010408 film Substances 0.000 description 28
- 239000010953 base metal Substances 0.000 description 24
- 239000011521 glass Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 15
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Molecular Biology (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
(1)補助容量電極12の電位を変調し、保持用の電荷量を大きくする。
(2)プロセス設計ルールを変更する。
(3)駆動電圧を高くする。
(2)CVD法(化学気相成長法:Chemical Vapor Deposition)により、Cr電極(下地金属層100)上に、基板絶縁層101としてのSiN膜を300[nm]の厚さになるように成膜する。
(4)基板絶縁層(SiN膜)101上に、スパッタにより200[nm]のAl―Nd層を成膜し、フォトマスクを用いて、ゲート配線106および画素容量形成電極(補助容量形成電極)107等のTFTの下電極を形成する。
(6)CVD法により、オーミックコンタクト層110として、a−Si(n+)膜を20[nm]の厚さになるように成膜する。
(7)スパッタにより、オーミックコンタクト層110上に、200[nm]の厚さになるようにAl層を成膜する。
(8)フォトマスクを用いウェットエッチングにより、TFT部を含むソース配線111、ドレイン電極112を形成する。引き続き、同レジストパターンを用い、ドライエッチングによりTFTチャネル部のオーミックコンタクト層(a−Si(n+)層)110を除去した後、SiN膜113を300[nm]の厚さに成膜する。
(9)ドライエッチングにより、SiN膜(保護層)113にコンタクトホール123を形成して、ドレイン電極112を一部露出させる。
(10)スパッタにより、SiN膜113上にAl層を200[nm]の厚さになるように成膜する。
(11)フォトマスクを用いウェットエッチングにより、Al層を、画素電極114として形成する。
(12)TiO2を含有したアクリル樹脂層を4[μm]塗布し、白色散乱層115を形成する。
(13)絶縁膜として、アクリル系樹脂116を1[μm]の厚さになるように成膜する。
(14)アクリル系樹脂116上に、Ti層117を300[nm]の厚さになるように成膜し、さらに、カーボンを含有したフォトレジスト118を300[nm]の厚さになるように成膜する。
(15)そして、厚膜フォトレジストを15[μm]の厚さになるように形成した後、画素間部分を残して現像し、画素間隔壁119を形成する。
(16)厚膜フォトレジストで形成した画素間隔壁119を用いて、Ti層117と、カーボン含有のフォトレジスト118とを300[nm]エッチングし、TFTバックプレーンを形成する。
(17)最後に、パラフィン系炭化水素溶媒を主成分とする絶縁性液体120に、カーボンブラックを含有したポリスチレン樹脂から成る黒色の帯電性粒子121を分散させた分散液を、画素間隔壁119で区画された空間128に充填する。そして、透明な第2基板122を画素間隔壁119と接触させるようにして固定した。つまり、電気泳動粒子である帯電性粒子121と帯電性粒子121を分散させる媒質である分散液とを挟持した状態で、第2基板122とガラス基板130とを対向配置した。なお、ここでは簡単のため図示していないが、画素間隔壁119と第2基板122とは接着剤で固定されている。
100 導電層(下地金属層)
101 基板絶縁層(SiN膜)
102 基板絶縁層コンタクトホール
106 配線(ゲート電極、ゲート配線)
107 画素容量形成電極(Cs配線)
108 ゲート絶縁膜(SiN膜)
109 アモルファス半導体層
110 オーミックコンタクト層(a−Si(n+))
111 配線(ソース電極、ソース配線)
112 ドレイン電極(ドレイン配線)
113 SiN膜
114 画素(画素電極)
115 白色散乱層
116 アクリル系樹脂(絶縁膜)
117 Ti層
118 カーボン含有のフォトレジスト
119 画素間隔壁
120 絶縁性液体
121 帯電性粒子
122 第2基板
123 コンタクトホール
124 基板電位固定配線
125 駆動手段、第1手段(ゲート線駆動回路)
126 駆動手段、第2手段(ソース線駆動回路)
127 半導体素子、3端子トランジスタ(TFT)
130 基板(ガラス基板)
Claims (4)
- 基板上に面状に形成された導電層と、
該導電層上に形成された絶縁層と、
該絶縁層上にてマトリクス状に形成された複数の配線と、
該複数の配線の各交差部分にそれぞれ配置された半導体素子及び該半導体素子を介して信号を付与される複数の画素と、を備え、
該画素に信号付与する前記半導体素子の電極と前記導電層との間に補助容量が形成されてなり、
前記導電層が透明電極であり、
前記導電層が前記複数の画素にわたって全面に形成されている、
ことを特徴とする透過型の表示装置。 - 前記マトリクス状の前記複数の配線をそれぞれ駆動する駆動手段を備え、
前記導電層の電位は、前記駆動手段内における何れかの電源電位に固定されている、
ことを特徴とする請求項1記載の透過型の表示装置。 - 前記半導体素子の前記電極であるドレイン電極、或いは該ドレイン電極と電気的に接続された電極の何れにも電気的に接続されずに独立して配された容量形成電極を更に備え、
前記導電層の電位は、前記容量形成電極の電位と同電位である、
ことを特徴とする請求項1又は2記載の透過型の表示装置。 - 前記半導体素子は、逆スタガー構成のTFT構造である、
ことを特徴とする請求項1ないし3の何れか1項記載の透過型の表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006157996A JP5247008B2 (ja) | 2006-06-07 | 2006-06-07 | 透過型の表示装置 |
US11/755,220 US7791677B2 (en) | 2006-06-07 | 2007-05-30 | Display apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006157996A JP5247008B2 (ja) | 2006-06-07 | 2006-06-07 | 透過型の表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007328066A JP2007328066A (ja) | 2007-12-20 |
JP2007328066A5 JP2007328066A5 (ja) | 2009-07-30 |
JP5247008B2 true JP5247008B2 (ja) | 2013-07-24 |
Family
ID=38820980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006157996A Expired - Fee Related JP5247008B2 (ja) | 2006-06-07 | 2006-06-07 | 透過型の表示装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7791677B2 (ja) |
JP (1) | JP5247008B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI492389B (zh) * | 2012-07-13 | 2015-07-11 | Au Optronics Corp | 畫素結構及畫素結構的製作方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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US3612758A (en) * | 1969-10-03 | 1971-10-12 | Xerox Corp | Color display device |
JPS58205181A (ja) * | 1982-05-26 | 1983-11-30 | セイコーインスツルメンツ株式会社 | マトリクス液晶表示装置 |
JP2616160B2 (ja) * | 1990-06-25 | 1997-06-04 | 日本電気株式会社 | 薄膜電界効果型トランジスタ素子アレイ |
US5576858A (en) * | 1991-10-14 | 1996-11-19 | Hosiden Corporation | Gray scale LCD control capacitors formed between a control capacitor electrode on one side of an insulating layer and two subpixel electrodes on the other side |
JP3256391B2 (ja) * | 1994-11-28 | 2002-02-12 | キヤノン株式会社 | 回路基板構造 |
JP3421494B2 (ja) | 1996-01-30 | 2003-06-30 | 株式会社東芝 | 電気泳動表示装置 |
JP3542504B2 (ja) * | 1997-08-28 | 2004-07-14 | キヤノン株式会社 | カラー表示装置 |
US6266119B1 (en) * | 1998-01-13 | 2001-07-24 | Canon Kabushiki Kaisha | Liquid crystal apparatus and production process thereof |
JP3980156B2 (ja) * | 1998-02-26 | 2007-09-26 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置 |
JP2000338527A (ja) * | 1999-06-01 | 2000-12-08 | Central Glass Co Ltd | 表示素子 |
JP3716132B2 (ja) * | 1999-06-23 | 2005-11-16 | アルプス電気株式会社 | 液晶表示装置 |
JP4279971B2 (ja) * | 1999-11-10 | 2009-06-17 | パナソニック電工株式会社 | 発光素子 |
JP3571993B2 (ja) * | 2000-04-06 | 2004-09-29 | キヤノン株式会社 | 液晶表示素子の駆動方法 |
JP2001324725A (ja) * | 2000-05-12 | 2001-11-22 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
JP3450842B2 (ja) * | 2000-11-30 | 2003-09-29 | キヤノン株式会社 | カラー液晶表示装置 |
JP2002353424A (ja) * | 2001-03-23 | 2002-12-06 | Seiko Epson Corp | 基板装置の製造方法及び基板装置、電気光学装置の製造方法及び電気光学装置、並びに電子機器 |
KR100835974B1 (ko) * | 2001-12-24 | 2008-06-09 | 엘지디스플레이 주식회사 | 횡전계방식 액정표시장치용 어레이기판과 그 제조방법 |
JP4182022B2 (ja) * | 2004-04-01 | 2008-11-19 | キヤノン株式会社 | 表示装置用パネル及び表示装置 |
JP2006078789A (ja) * | 2004-09-09 | 2006-03-23 | Sharp Corp | 半透過型液晶表示装置 |
CN100523923C (zh) * | 2004-10-06 | 2009-08-05 | 夏普株式会社 | 液晶显示器 |
JP4182100B2 (ja) * | 2004-12-15 | 2008-11-19 | キヤノン株式会社 | アクティブマトリクス液晶表示装置 |
JP4829501B2 (ja) * | 2005-01-06 | 2011-12-07 | シャープ株式会社 | 液晶表示装置 |
JP4586732B2 (ja) * | 2006-01-06 | 2010-11-24 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法並びに電子機器 |
-
2006
- 2006-06-07 JP JP2006157996A patent/JP5247008B2/ja not_active Expired - Fee Related
-
2007
- 2007-05-30 US US11/755,220 patent/US7791677B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20070284596A1 (en) | 2007-12-13 |
JP2007328066A (ja) | 2007-12-20 |
US7791677B2 (en) | 2010-09-07 |
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