JP5244364B2 - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法 Download PDFInfo
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- JP5244364B2 JP5244364B2 JP2007269036A JP2007269036A JP5244364B2 JP 5244364 B2 JP5244364 B2 JP 5244364B2 JP 2007269036 A JP2007269036 A JP 2007269036A JP 2007269036 A JP2007269036 A JP 2007269036A JP 5244364 B2 JP5244364 B2 JP 5244364B2
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- 239000004065 semiconductor Substances 0.000 title claims description 240
- 238000004519 manufacturing process Methods 0.000 title claims description 86
- 229910052751 metal Inorganic materials 0.000 claims description 156
- 239000002184 metal Substances 0.000 claims description 156
- 229910021332 silicide Inorganic materials 0.000 claims description 141
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 141
- 230000015572 biosynthetic process Effects 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 59
- 238000005530 etching Methods 0.000 claims description 51
- 239000012535 impurity Substances 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 280
- 239000010410 layer Substances 0.000 description 186
- 239000000758 substrate Substances 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000010409 thin film Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 230000020169 heat generation Effects 0.000 description 7
- 239000010453 quartz Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
前記凹部の底部に位置する前記不純物無添加層を覆う絶縁膜と、前記凹部の底部に位置する前記不純物無添加層の上方に前記絶縁膜を介して設けられたゲート電極と、前記凹部に隣接して前記凹部の側壁をなす前記半導体膜の部分の上面に設けられた一対の金属シリサイド層と、前記一対の金属シリサイド層の下に前記金属シリサイド層に接して設けられ前記半導体装置のソース領域及びドレイン領域として機能する一対の不純物添加層とを有することを特徴とする半導体装置が提供される。
2 半導体膜
3 不純物添加層
4 不純物無添加層
5 金属膜
6 金属シリサイド層
7 レジスト
8 開口
10 ソース領域
11 ドレイン領域
12 チャネル形成領域
13 凹部
14 ゲート絶縁膜
14a ゲート絶縁膜
15 ゲート電極
16 層間絶縁膜
17 開口部(コンタクトホール)
18 導電膜
20、20a〜20f TFT
23 SiON膜
24 サイドウォール
25、26 低濃度不純物添加領域(LDD領域)
30、40 ハーフトーンマスク(グレートーンマスク)
31 石英板
32 半透光性膜
33 遮光膜
35 薄膜部分
36 厚膜部分
41 遮光材料層
42 開口
43 スリット
51 SiNO膜
52 SiON膜
53 サイドウォール
Claims (9)
- 半導体装置の作製方法であって、
絶縁体上にシリコンを含む半導体材料からなる半導体膜を形成する工程と、
前記半導体膜の上面に金属シリサイド層を形成する工程と、
前記金属シリサイド層及び前記半導体膜をエッチングによりパターニングして、前記半導体装置のチャネル形成領域に対応する位置に凹部を形成するとともに、この凹部の底部に位置する半導体膜の部分を所望の厚さに薄膜化する工程と、
前記薄膜化された半導体膜の前記部分を覆う絶縁膜を形成する工程と、
前記薄膜化された半導体膜の前記部分の上方に前記絶縁膜を介してゲート電極を形成する工程と、
前記ゲート電極をマスクとして前記金属シリサイド層を貫通し前記金属シリサイド層の下の前記半導体膜に不純物を添加する工程とを有することを特徴とする半導体装置の作製方法。 - 前記金属シリサイド層及び前記半導体膜をエッチングによりパターニングする工程が、
前記ゲート電極とチャネル長方向の寸法が概ね等しい開口を有するレジストをマスクとして前記金属シリサイド層を等方性エッチングしてその下の前記半導体膜を露出する工程と、
前記開口を有する前記レジストをマスクとして、露出された前記半導体膜を異方性エッチングする工程とを有することを特徴とする請求項1に記載の半導体装置の作製方法。 - 前記金属シリサイド層及び前記半導体膜をエッチングによりパターニングする工程が、
前記金属シリサイド層を覆うレジストを被着する工程と、
ハーフトーンマスクを用いて前記レジストを露光・現像して、前記半導体装置のチャネル形成領域に対応する位置に開口を有し、前記開口に隣接する部分に比較的膜厚の小さい部分を有し、前記比較的膜厚の小さい部分の外側に隣接して比較的膜厚の大きい部分を有するようにパターニングされたレジストを形成する工程と、
前記パターニングされたレジストを用いて前記金属シリサイド層及び前記半導体膜をエッチングする工程とを有することを特徴とする請求項1に記載の半導体装置の作製方法。 - 前記金属シリサイド層及び前記半導体膜をエッチングによりパターニングする工程の後に、
前記パターニングされた金属シリサイド層及び半導体膜の表面を被覆するサイドウォール膜を成膜する工程と、
前記サイドウォール膜をエッチングして、前記凹部の側面に沿った前記サイドウォール膜の部分がサイドウォールとして残るようにするとともに、前記薄膜化された半導体膜の前記部分を露出する工程とを有し、
前記薄膜化された半導体膜の前記部分を覆う絶縁膜を形成する前記工程は、前記サイドウォール膜のエッチング工程の後になされることを特徴とする請求項1乃至3のいずれか一項に記載の半導体装置の作製方法。 - 前記サイドウォール膜を成膜する工程は、
酸化窒化シリコンと窒化酸化シリコンの一方からなる第1のサイドウォール膜を成膜する工程と、
前記第1のサイドウォール膜上に、前記酸化窒化シリコンと窒化酸化シリコンの他方からなる第2のサイドウォール膜を成膜する工程とを有し、
前記サイドウォール膜のエッチング工程は、
前記凹部の側面に沿った前記第2のサイドウォール膜の部分が残るように前記第2のサイドウォール膜をエッチングして、前記残った第2のサイドウォール膜の部分をサイドウォールとする工程と、
前記残った第2のサイドウォール膜で覆われていない前記第1のサイドウォール膜をエッチングにより除去して前記薄膜化された半導体膜の前記部分を露出する工程とを有することを特徴とする請求項4に記載の半導体装置の作製方法。 - 前記窒化酸化シリコンの代わりに窒化シリコンを用いることを特徴とする請求項5に記載の半導体装置の作製方法。
- 半導体装置であって、
絶縁体上に形成され、前記半導体装置のチャネル形成領域に対応する部分に凹部が設けられ、前記凹部の底部に位置する部分が不純物が添加されていない不純物無添加層からなる半導体膜と、
前記凹部の底部に位置する前記不純物無添加層を覆う絶縁膜と、
前記凹部の底部に位置する前記不純物無添加層の上方に前記絶縁膜を介して設けられたゲート電極と、
前記凹部に隣接して前記凹部の側壁をなす前記半導体膜の部分の上面に設けられた一対の金属シリサイド層と、
前記一対の金属シリサイド層の下に前記金属シリサイド層に接して設けられ前記半導体装置のソース領域及びドレイン領域として機能する一対の不純物添加層とを有し、
前記ソース領域と前記ドレイン領域の間の距離より、前記ソース領域上の前記シリサイド層と前記ドレイン領域上の前記シリサイド層の間の距離の方が大きいことを特徴とする半導体装置。 - 前記凹部の底部に位置する前記不純物無添加層の厚さが前記ソース領域及びドレイン領域として機能する一対の不純物添加層の厚さより小さいことを特徴とする請求項7に記載の半導体装置。
- 前記半導体膜の前記凹部の側面に沿ったサイドウォールを更に有することを特徴とする請求項7または請求項8に記載の半導体装置。
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Application Number | Priority Date | Filing Date | Title |
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JP2007269036A JP5244364B2 (ja) | 2007-10-16 | 2007-10-16 | 半導体装置及びその作製方法 |
US12/251,596 US8053289B2 (en) | 2007-10-16 | 2008-10-15 | Manufacturing method for thin film transistor on insulator |
US13/288,999 US8664722B2 (en) | 2007-10-16 | 2011-11-04 | Thin film transistor with metal silicide layer |
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JP2007269036A JP5244364B2 (ja) | 2007-10-16 | 2007-10-16 | 半導体装置及びその作製方法 |
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JP5244364B2 true JP5244364B2 (ja) | 2013-07-24 |
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US8373439B2 (en) | 2009-04-14 | 2013-02-12 | Monolithic 3D Inc. | 3D semiconductor device |
US8378715B2 (en) | 2009-04-14 | 2013-02-19 | Monolithic 3D Inc. | Method to construct systems |
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US20090096024A1 (en) | 2009-04-16 |
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