JP5222397B2 - 電子デバイス - Google Patents
電子デバイス Download PDFInfo
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- JP5222397B2 JP5222397B2 JP2011510821A JP2011510821A JP5222397B2 JP 5222397 B2 JP5222397 B2 JP 5222397B2 JP 2011510821 A JP2011510821 A JP 2011510821A JP 2011510821 A JP2011510821 A JP 2011510821A JP 5222397 B2 JP5222397 B2 JP 5222397B2
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- 239000011159 matrix material Substances 0.000 claims description 182
- 238000004770 highest occupied molecular orbital Methods 0.000 claims description 108
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims description 105
- 239000010410 layer Substances 0.000 claims description 103
- 239000000463 material Substances 0.000 claims description 72
- 239000002800 charge carrier Substances 0.000 claims description 47
- 239000002346 layers by function Substances 0.000 claims description 26
- 230000005525 hole transport Effects 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 6
- 238000004776 molecular orbital Methods 0.000 description 6
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 5
- -1 N-phenylbenzylimidazol-2-yl Chemical group 0.000 description 5
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 5
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 5
- 239000007983 Tris buffer Substances 0.000 description 4
- NKVDKFWRVDHWGC-UHFFFAOYSA-N iridium(3+);1-phenylisoquinoline Chemical compound [Ir+3].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 NKVDKFWRVDHWGC-UHFFFAOYSA-N 0.000 description 4
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 4
- 238000004611 spectroscopical analysis Methods 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- XSVXWCZFSFKRDO-UHFFFAOYSA-N triphenyl-(3-triphenylsilylphenyl)silane Chemical compound C1=CC=CC=C1[Si](C=1C=C(C=CC=1)[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 XSVXWCZFSFKRDO-UHFFFAOYSA-N 0.000 description 3
- DETFWTCLAIIJRZ-UHFFFAOYSA-N triphenyl-(4-triphenylsilylphenyl)silane Chemical compound C1=CC=CC=C1[Si](C=1C=CC(=CC=1)[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 DETFWTCLAIIJRZ-UHFFFAOYSA-N 0.000 description 3
- MQRCTQVBZYBPQE-UHFFFAOYSA-N 189363-47-1 Chemical compound C1=CC=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC=CC=1)C=1C=CC=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 MQRCTQVBZYBPQE-UHFFFAOYSA-N 0.000 description 2
- OBAJPWYDYFEBTF-UHFFFAOYSA-N 2-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C3=C4C=CC=CC4=C(C=4C=C5C=CC=CC5=CC=4)C4=CC=C(C=C43)C(C)(C)C)=CC=C21 OBAJPWYDYFEBTF-UHFFFAOYSA-N 0.000 description 2
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 2
- AOQKGYRILLEVJV-UHFFFAOYSA-N 4-naphthalen-1-yl-3,5-diphenyl-1,2,4-triazole Chemical compound C1=CC=CC=C1C(N1C=2C3=CC=CC=C3C=CC=2)=NN=C1C1=CC=CC=C1 AOQKGYRILLEVJV-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- IEVQFYKGWUDNTF-UHFFFAOYSA-M [O-]C(C1=NC=CC=C1[Ir+]C1=CC(F)=CC(F)=C1C1=CC=CC=N1)=O Chemical compound [O-]C(C1=NC=CC=C1[Ir+]C1=CC(F)=CC(F)=C1C1=CC=CC=N1)=O IEVQFYKGWUDNTF-UHFFFAOYSA-M 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000003869 coulometry Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001420 photoelectron spectroscopy Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- HQSLHDHQIQJZHQ-UHFFFAOYSA-N 1,2,3,4-tetraphenyltetracene Chemical compound C1=CC=CC=C1C(C(=C1C=C2C=C3C=CC=CC3=CC2=CC1=C1C=2C=CC=CC=2)C=2C=CC=CC=2)=C1C1=CC=CC=C1 HQSLHDHQIQJZHQ-UHFFFAOYSA-N 0.000 description 1
- XNCMQRWVMWLODV-UHFFFAOYSA-N 1-phenylbenzimidazole Chemical compound C1=NC2=CC=CC=C2N1C1=CC=CC=C1 XNCMQRWVMWLODV-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- OSQXTXTYKAEHQV-WXUKJITCSA-N 4-methyl-n-[4-[(e)-2-[4-[4-[(e)-2-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]ethenyl]phenyl]phenyl]ethenyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(\C=C\C=2C=CC(=CC=2)C=2C=CC(\C=C\C=3C=CC(=CC=3)N(C=3C=CC(C)=CC=3)C=3C=CC(C)=CC=3)=CC=2)=CC=1)C1=CC=C(C)C=C1 OSQXTXTYKAEHQV-WXUKJITCSA-N 0.000 description 1
- RINNIXRPLZSNJJ-UHFFFAOYSA-N 5-[3-tert-butyl-4-phenyl-5-(4-phenylphenyl)phenyl]-1h-1,2,4-triazole Chemical compound C=1C=CC=CC=1C=1C(C(C)(C)C)=CC(C2=NNC=N2)=CC=1C(C=C1)=CC=C1C1=CC=CC=C1 RINNIXRPLZSNJJ-UHFFFAOYSA-N 0.000 description 1
- MZYDBGLUVPLRKR-UHFFFAOYSA-N 9-(3-carbazol-9-ylphenyl)carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC(N2C3=CC=CC=C3C3=CC=CC=C32)=CC=C1 MZYDBGLUVPLRKR-UHFFFAOYSA-N 0.000 description 1
- SWUBEMMFTUPINB-UHFFFAOYSA-N 9-[3-carbazol-9-yl-5-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]carbazole Chemical compound C1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=NC(C=2C=C(C=C(C=2)N2C3=CC=CC=C3C3=CC=CC=C32)N2C3=CC=CC=C3C3=CC=CC=C32)=N1 SWUBEMMFTUPINB-UHFFFAOYSA-N 0.000 description 1
- RAPHUPWIHDYTKU-WXUKJITCSA-N 9-ethyl-3-[(e)-2-[4-[4-[(e)-2-(9-ethylcarbazol-3-yl)ethenyl]phenyl]phenyl]ethenyl]carbazole Chemical group C1=CC=C2C3=CC(/C=C/C4=CC=C(C=C4)C4=CC=C(C=C4)/C=C/C=4C=C5C6=CC=CC=C6N(C5=CC=4)CC)=CC=C3N(CC)C2=C1 RAPHUPWIHDYTKU-WXUKJITCSA-N 0.000 description 1
- VIJYEGDOKCKUOL-UHFFFAOYSA-N 9-phenylcarbazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 VIJYEGDOKCKUOL-UHFFFAOYSA-N 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- 101710182846 Polyhedrin Proteins 0.000 description 1
- VYVIOMJSKUGJLV-UHFFFAOYSA-N [Ir+2] Chemical compound [Ir+2] VYVIOMJSKUGJLV-UHFFFAOYSA-N 0.000 description 1
- NFNALQOLQWJCNE-UHFFFAOYSA-N [Ir+3].C1=CC=C2C3=NC(C)=CN=C3C3=CC=CC=C3C2=C1.C1=CC=C2C3=NC(C)=CN=C3C3=CC=CC=C3C2=C1 Chemical compound [Ir+3].C1=CC=C2C3=NC(C)=CN=C3C3=CC=CC=C3C2=C1.C1=CC=C2C3=NC(C)=CN=C3C3=CC=CC=C3C2=C1 NFNALQOLQWJCNE-UHFFFAOYSA-N 0.000 description 1
- 238000005263 ab initio calculation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- VVOPUZNLRVJDJQ-UHFFFAOYSA-N phthalocyanine copper Chemical compound [Cu].C12=CC=CC=C2C(N=C2NC(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2N1 VVOPUZNLRVJDJQ-UHFFFAOYSA-N 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/90—Multiple hosts in the emissive layer
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
Description
νij=ν0exp[−2γa(ΔRij/a)]
によって求められる。このモデルでは、固体は電荷担体の局所的状態としての位置i,jから見たものとされる。位置iから位置jへの電荷担体の輸送は抵抗Rijによって表される。温度依存性の抵抗の大きさは2つの位置のあいだの空間的距離と移動に必要な活性エネルギとを反映している。パラメータγは電荷担体の電子波動関数の傾きであり、パラメータaは平均格子距離である。フォノン周波数ν0は、電荷担体を第1の局所的状態から第2の局所的状態へ移動させる試行の回数を表しており、約1013s−1の範囲にあって、電子フォノン結合の強さが考慮されている。
NPB N,N’−ビス(ナフタレン−1−イル)−N,N’−ビス(フェニル)ベンジジン
TCTA 4,4’,4''−トリス(カルバゾール−9−イル)トリフェニルアミン
CPB 4,4’−ビス(カルバゾール−9−イル)ビフェニル
1T−NATA 4,4’,4''−(トリス(N−(1−ナフチル)−N−フェニル−アミノ)トリフェニルアミン
Spiro−TAD 2,2’,7,7’−テトラキス(N,N−ジフェニルアミノ)−9,9’−スピロビフルオレン
などを利用できる。
TPBi 2,2’,2''−(1,3,5−ベンジントリイル)−トリス(1−フェニル−1−H−ベンゾイミダゾール)
TAZ 3−(4−ビフェニリル)−4−フェニル−5−t−ブチルフェニル−1,2,4−トリアゾール
Alq3 トリス(8−ヒドロキシ−キノリナト)アルミニウム
BCP 2,9−ジメチル−4,7−ジフェニル−1,10−フェナントロリン
NTAZ 4−(ナフタレン−1−イル)−3,5−ジフェニル−4H−1,2,4−トリアゾール
Balq ビス−(2−メチル−8−キノリノラト)−4−(フェニルフェノラト)アルミニウム
などを利用できる。
UGH−2 1,4−ビス(トリフェニルシリル)ベンゾール
UGH−3 1,3−ビス(トリフェニルシリル)ベンゾール
mCP 1,3−ビス(カルバゾール−9−イル)ベンゾール
などを利用できる。
Ir(ppy)3 トリス(2−フェニルピリジン)イリジウム(III)
Ir(ppy)2 ビス(2−フェニルピリドリン)(アセチルアセトナト)イリジウム(II)(アカク)
BczVBi 4,4’−ビス(9−エチル−3−カルバゾビニレン)−1,1’−ビフェニル
FIrPic ビス(3,5−ジフルオロ−2−(2−ピリジル)フェニル−(2−カルボキシピリジル)イリジウム(III)
ルブレン テトラフェニルナフタセン
Ir(piq)3 トリス(1−フェニルイソキノリン)イリジウム(III)
などを利用できる。
Bphen 4,7−ジフェニル−1,10−フェナントロリン
DPAVBi 4,4’−ビス(2−(4−(N,N’−ジフェニルアミノ)フェニル)ビニル)ビフェニル
CuPC フタロシアニン銅錯体
S−DPVBi 2,2’,7,7’−テトラキス(2,2−ジフェニルビニル)スピロ−9,9’−ビフルオレンクプ
TAPC 1,1−ビス(4−ビス(4−メチルフェニル)−アミノフェニル)−シクロヘキサン
TBADN 9,10−ビス(2−ナフチル)−2−t−ブチルアントラセン
TPD N,N,N’,N’−テトラフェニルベンジジン
などを利用できる。
Claims (14)
- 基板、第1の電極、少なくとも1つの有機機能層、および、第2の電極を含む
電子デバイスにおいて、
前記有機機能層は、前記第1の電極と前記第2の電極とのあいだに配置されており、かつ、少なくとも、第1のマトリクス材料、第2のマトリクス材料および第3のマトリクス材料を含み、ここで、
前記第3のマトリクス材料は、前記第1のマトリクス材料の最低非占有分子軌道LUMOおよび前記第2のマトリクス材料の最低非占有分子軌道LUMOよりもエネルギの低い最低非占有分子軌道LUMOを有しており、
前記第2のマトリクス材料は、前記第1のマトリクス材料の最高占有分子軌道HOMOおよび前記第3のマトリクス材料の最高占有分子軌道HOMOよりもエネルギの高い最高占有分子軌道HOMOを有しており、
前記有機機能層は少なくとも1つの発光材料をドープされた発光層である
ことを特徴とする電子デバイス。 - 前記第1のマトリクス材料は、前記第2のマトリクス材料の最低非占有分子軌道LUMOおよび前記第3のマトリクス材料の最低非占有分子軌道LUMOよりもエネルギの高い最低非占有分子軌道LUMOと、前記第2のマトリクス材料の最高占有分子軌道HOMOおよび前記第3のマトリクス材料の最高占有分子軌道HOMOよりもエネルギの低い最高占有分子軌道HOMOを有している、請求項1記載の電子デバイス。
- 前記第2のマトリクス材料は、前記第3のマトリクス材料の最低非占有分子軌道LUMOよりもエネルギの高い最低非占有分子軌道LUMOと、前記第3のマトリクス材料の最高占有分子軌道HOMOよりもエネルギの高い最高占有分子軌道HOMOとを有している、請求項2記載の電子デバイス。
- 前記第1のマトリクス材料は前記第2のマトリクス材料および前記第3のマトリクス材料の電荷担体移動度よりも小さい電荷担体移動度を有する、請求項1から3までのいずれか1項記載の電子デバイス。
- 前記第2のマトリクス材料は正孔輸送材料を含む、請求項1から4までのいずれか1項記載の電子デバイス。
- 前記第3のマトリクス材料は電子輸送材料を含む、請求項1から5までのいずれか1項記載の電子デバイス。
- 前記有機機能層は、発光層、電子輸送層、正孔輸送層、電子阻止層、正孔阻止層、正孔注入層、電子注入層および中間層を含むグループから選択される、請求項1から6までのいずれか1項記載の電子デバイス。
- 前記発光層の前記発光材料は10重量%以下の濃度を有する、請求項1から7までのいずれか1項記載の電子デバイス。
- 前記発光材料の前記濃度は前記発光層内で所定の勾配を有する、請求項8記載の電子デバイス。
- 前記発光材料は、前記第1のマトリクス材料の最低非占有分子軌道LUMOおよび前記第2のマトリクス材料の最低非占有分子軌道LUMOおよび前記第3のマトリクス材料の最低非占有分子軌道LUMOよりもエネルギの低い最低非占有分子軌道LUMOと、前記第1のマトリクス材料の最高占有分子軌道HOMOおよび前記第2のマトリクス材料の最高占有分子軌道HOMOおよび前記第3のマトリクス材料の最高占有分子軌道HOMOよりもエネルギの高い最高占有分子軌道HOMOとを有する、請求項1から9までのいずれか1項記載の電子デバイス。
- 当該の電子デバイスが光形成装置として構成されている、請求項1から10までのいずれか1項記載の電子デバイス。
- 当該の電子デバイスが、有機光形成装置として構成されている、請求項1から10までのいずれか1項記載の電子デバイス。
- 請求項1から12までのいずれか1項記載の電子デバイスを製造するための
電子デバイスの製造方法であって、
A)基板を設けるステップ、
B)第1の電極および第2の電極を設けるステップ、および
C)前記第1の電極と前記第2の電極とのあいだに少なくとも1つの有機機能層を配置するステップ
を有しており、
前記ステップC)で、少なくとも、第1のマトリクス材料、第2のマトリクス材料および第3のマトリクス材料を同時に被着する
ことを特徴とする電子デバイスの製造方法。 - 前記ステップC)で、前記第1のマトリクス材料、前記第2のマトリクス材料および前記第3のマトリクス材料を蒸着法により被着する、請求項13記載の電子デバイスの製造方法。
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DE102008039361A DE102008039361A1 (de) | 2008-05-30 | 2008-08-22 | Elektronische Vorrichtung |
DE102008039361.4 | 2008-08-22 | ||
PCT/DE2009/000701 WO2009143807A1 (de) | 2008-05-30 | 2009-05-18 | Elektronische vorrichtung |
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DE102008039361A1 (de) * | 2008-05-30 | 2009-12-03 | Osram Opto Semiconductors Gmbh | Elektronische Vorrichtung |
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WO2013137089A1 (en) * | 2012-03-14 | 2013-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, display device, electronic device, and lighting device |
US10978654B2 (en) * | 2013-10-25 | 2021-04-13 | The Regents Of The University Of Michigan | Exciton management in organic photovoltaic multi-donor energy cascades |
WO2016087486A1 (en) * | 2014-12-02 | 2016-06-09 | Universiteit Gent | Light emission device with anisotropic properties |
GB2538325A (en) * | 2015-05-15 | 2016-11-16 | Cambridge Display Tech Ltd | Organic light-emitting device |
KR102500272B1 (ko) | 2015-09-16 | 2023-02-16 | 삼성디스플레이 주식회사 | 화합물 및 이를 포함하는 유기 발광 소자 |
CN105280829B (zh) * | 2015-09-17 | 2018-01-12 | Tcl集团股份有限公司 | Qled及其制备方法 |
KR102523619B1 (ko) | 2016-11-25 | 2023-04-20 | 엘티소재주식회사 | 헤테로고리 화합물 및 이를 이용한 유기 발광 소자 |
JP7299020B2 (ja) * | 2018-12-28 | 2023-06-27 | 三星電子株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
KR20210143379A (ko) * | 2020-05-19 | 2021-11-29 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함한 전자 장치 |
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EP2281318A1 (de) | 2011-02-09 |
CN103268920A (zh) | 2013-08-28 |
JP2011522406A (ja) | 2011-07-28 |
CN102047463A (zh) | 2011-05-04 |
KR101559607B1 (ko) | 2015-10-12 |
WO2009143807A1 (de) | 2009-12-03 |
EP2281318B1 (de) | 2013-07-10 |
US8723164B2 (en) | 2014-05-13 |
DE102008039361A1 (de) | 2009-12-03 |
US20110291080A1 (en) | 2011-12-01 |
KR20150083141A (ko) | 2015-07-16 |
CN102047463B (zh) | 2013-05-08 |
KR101661437B1 (ko) | 2016-09-29 |
KR20110021765A (ko) | 2011-03-04 |
CN103268920B (zh) | 2016-06-01 |
TW201004468A (en) | 2010-01-16 |
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