JP5207909B2 - キャリア、キャリアを被覆する方法並びに半導体ウェハの両面を同時に材料除去する加工方法 - Google Patents
キャリア、キャリアを被覆する方法並びに半導体ウェハの両面を同時に材料除去する加工方法 Download PDFInfo
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- JP5207909B2 JP5207909B2 JP2008260480A JP2008260480A JP5207909B2 JP 5207909 B2 JP5207909 B2 JP 5207909B2 JP 2008260480 A JP2008260480 A JP 2008260480A JP 2008260480 A JP2008260480 A JP 2008260480A JP 5207909 B2 JP5207909 B2 JP 5207909B2
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
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Description
a) 機械的加工;
b) 化学的加工;
c) 化学機械的加工;
d) 場合による層構造体の製造。
ラッピング法は、例えばFeinwerktechnik & Messtechnik 90 (1982) 5, pp. 242-244に開示されている。
この多様なポリウレタン系は、熱硬化性又は常温硬化性キャスティング系(熱硬化性ポリウレタン)及び射出成形、押出成形などにおいて又は加硫(後架橋)のために加工される固体系(熱可塑性ポリウレタン)に分類することができる。
− 前記キャリアに、本発明による方法の実施の際に前記キャリアに作用する力に対して十分な安定性を付与する第1の剛性の材料、例えば(硬化された)(特殊)鋼からなる「コア」;
− 摩耗に耐性でかつ軟質の第2の材料からなる有利に両面の被覆、本発明の場合にこれは熱硬化性ポリウレタンエラストマーの場合が最良である;及び
− 有利に、半導体基板を収容するために前記キャリア中の開口部をライニングしかつ機械的損傷(破砕、破断)及び化学的損傷(金属汚染)を抑制する第3の材料。
供給可能な直径約470mmを有するこの種のキャリアは、相応する開口部を備え、例えば300mmの直径の1枚の半導体ウェハ(図4)を正確に収容するか、又は200mmの直径の3枚までの半導体ウェハ(図5)又は150mmの直径の5枚までの半導体ウェハ、又は125mmの直径の8枚までの半導体ウェハを装備する。相応して大きな作業ディスク寸法及び小さな半導体ウェハ寸法の場合に、前記キャリアは相応して複数の半導体ウェハを収容することができる。
− 作業層と接触しない、高い剛性の第1の材料からなる「コア」8、これは前記キャリアに機械的安定性を付与するため、作業ディスクの間での回転運動の間に、前記キャリアに作用する力に関して弾性変形なしに耐える;
− 第2の材料からなる前面被覆(9a)及び背面被覆(9b)、これは半導体ウェハの加工の間に作業ディスクと接触し、結合粒子(作業層)及び遊離粒子(研磨スラリー、半導体ウェハからの材料除去による摩耗)からなる影響に対して高い耐摩耗性を有する;及び
− 半導体ウェハと前記キャリアのコア8との間の直接的な材料接触を抑制する第3の材料からなる1つ又は複数のライニング10。
さらに、高い摩耗にさらされる箇所の被覆がより厚く構成されている場合が特に有利である。これは、第1に外側歯部の付近でのキャリアの外側領域であるが、冷却潤滑剤−供給開口部15及び半導体ウェハ用の収容開口部11でのエッジでもある。図5(F)の実施例では、冷却潤滑剤−供給開口部15のエッジにも、半導体ウェハ用の収容開口部のエッジにも強化(22)されていてかつ付加的に半導体ウェハの収容開口部のエッジに設けられている(9=10)被覆が示されている。
酸又はアルカリ溶液での処理により前記キャリアの前記コアを化学的活性化、
このように前処理された前記キャリアコア上に定着剤を適用、
前記定着剤上にポッティングによりポリウレタンプレポリマーを適用、
架橋及び加硫によりポリウレタン層にすること
を有する方法によっても解決される。
前記キャリアコアの両面被覆は、初めに前記キャリアコアの一方の側を、次いで他方の側を続けて加工することにより達成される。
特に、既に目標厚さでの両面の同時被覆が有利である。
Claims (26)
- ラッピング装置、研削装置又はポリシング装置中で半導体ウェハの加工のために1つ又は複数の半導体ウェハを収容するのに適した、高い剛性を有する第1の材料からなるコアを有し、前記コアは完全に又は部分的に作業層と接触する表面が第2の材料で被覆され、かつ半導体を収容するための少なくとも1つのカットアウト部を有するキャリアにおいて、前記第2の材料がショアAによる20〜90の硬度を有する熱硬化性ポリウレタン−エラストマーである、キャリア。
- 第1の材料は、70〜600GPaの弾性率を有する、請求項1記載のキャリア。
- 第1の材料は、100〜250GPaの弾性率を有する、請求項2記載のキャリア。
- 第1の材料は、HRC30〜HRC60のロックウェル硬さを有する、請求項1から3までのいずれか1項記載のキャリア。
- 第1の材料がHRC40〜HRC52のロックウェル硬さを有する、請求項4記載のキャリア。
- 第1の材料が鋼である、請求項1記載のキャリア。
- 第1の材料が特殊鋼である、請求項1記載のキャリア。
- 熱硬化性ポリウレタン−エラストマーは40゜ショアA〜80゜ショアAの硬度を有する、請求項1から7までのいずれか1項記載のキャリア。
- 前記キャリアのカットアウト部はそのエッジ領域で第3の材料でライニングされていて、前記の第3の材料は、ポリビニリデンフルオリド(PVDF)、ポリアミド(PA)、ポリプロピレン(PP)、ポリエチレン(PE)、ポリエチレンテレフタラート(PET)、ポリカーボネート(PC)、ポリスチレン(PS)、ポリメチルメタクリラート(PMMA)、ペルフルオロアルコキシ(PFA)及びこれらの材料の混合物からなるグループから選択される、請求項1から8までのいずれか1項記載のキャリア。
- 前記キャリアのカットアウト部はそのエッジ領域で、20〜90ショアAの硬度を有する熱硬化性ポリウレタンエラストマーでライニングされている、請求項1から8までのいずれか1項記載のキャリア。
- 前記キャリアの全体の厚さは0.3〜1.0mmであり、第1の材料からなる前記キャリアのコアの厚さは、前記キャリアの全体の厚さの30%〜98%である、請求項1から10までのいずれか1項記載のキャリア。
- 前記キャリアのコアの厚さが、前記キャリアの全体の厚さの50%〜90%である、請求項11記載のキャリア。
- 第2の材料からなる層の厚さは前記コアの両面で同じである、請求項11又は12記載のキャリア。
- 前記被覆は、前記キャリア中の開口部の複数のエッジ又は全てのエッジの領域内では、残りの領域よりも厚い、請求項11又は12記載のキャリア。
- 金属コアと少なくとも1つのカットアウト部を有し、ラッピング装置、研削装置又はポリシング装置中で半導体ウェハを加工するために半導体ウェハを収容するのに適したキャリアを被覆する方法であって、
化学的処理、電気化学的処理又はプラズマを用いた処理により前記キャリアのコアを化学的に活性化し、
このように前処理したキャリアコアに定着剤を適用し、
ポッティングにより前記定着剤にポリウレタン−プレポリマーを適用し、
架橋及び加硫してポリウレタン層にし、それにより前記キャリアの開口部又はカットアウト部の複数の又は全てのエッジの周囲が完全に又は部分的に被覆され、前面側の被覆と裏面側の被覆とが相互に接続され、
前記ポリウレタン層を目標の厚さに研削することを有する、キャリアを被覆する方法。 - ポリウレタンを前記キャリアのコアの両面に同時に適用する、請求項15記載の方法。
- ポリウレタンプレポリマーの適用を型中で真空を用いて又は加圧下で行う、請求項15又は16記載の方法。
- 前記定着剤がシランである、請求項15から17までのいずれか1項記載の方法。
- カットアウト部のエッジにライニングするための第3の材料を、高圧射出成形法により導入する、請求項15から18までのいずれか1項記載の方法。
- 化学処理による活性化は酸又はアルカリ溶液のエッチング液を用いる処理である、請求項15記載の方法。
- 前記エッチング液は、リン酸(H3PO4)、硝酸(HNO3)、硫酸(H2SO4)、フ
ッ化水素酸(HF)、塩酸(HCl)又は前記酸の混合物からなるグループから選択される、請求項20記載の方法。 - エッチングの間に、付加的に酸化剤が前記コアに影響を及ぼす、請求項20又は21記載の方法。
- それぞれの半導体ウェハを、回転装置を用いて回転される請求項1から14までのいずれか1項記載の複数のキャリアの1つのカットアウト部中に自由に動くことができるように置き、それによりサイクロイド状の軌道曲線で動き、その際、前記半導体ウェハを2つの回転する環状の作業ディスクの間で材料除去加工する、複数の半導体ウェハの両面を同時に材料除去する加工方法。
- 材料除去する加工が半導体ウェハの両面研削を含み、それぞれの作業ディスクは研磨材料を有する作業層を有する、請求項23記載の方法。
- 材料除去する加工が、研磨材を有する懸濁液を供給する半導体ウェハの両面ラッピングを有する、請求項23記載の方法。
- 材料除去する加工は、シリカゾルを有する分散液を供給する両面ポリシングを有し、その際、それぞれの作業ディスクは作業層として研磨布を有する、請求項23記載の方法。
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CN101541477B (zh) | 2006-11-21 | 2011-03-09 | 3M创新有限公司 | 研磨载体以及方法 |
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JP2009099980A (ja) | 2009-05-07 |
DE102007049811A1 (de) | 2009-04-23 |
CN101412201B (zh) | 2012-04-18 |
KR20090039596A (ko) | 2009-04-22 |
DE102007049811B4 (de) | 2016-07-28 |
SG152121A1 (en) | 2009-05-29 |
CN101412201A (zh) | 2009-04-22 |
US20090104852A1 (en) | 2009-04-23 |
TWI411494B (zh) | 2013-10-11 |
US9539695B2 (en) | 2017-01-10 |
KR101275441B1 (ko) | 2013-06-14 |
TW200918236A (en) | 2009-05-01 |
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