JP5198106B2 - 成膜装置、及び成膜方法 - Google Patents
成膜装置、及び成膜方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 130
- 239000000178 monomer Substances 0.000 claims description 98
- 239000002994 raw material Substances 0.000 claims description 96
- 230000015572 biosynthetic process Effects 0.000 claims description 60
- 238000012719 thermal polymerization Methods 0.000 claims description 50
- 238000006243 chemical reaction Methods 0.000 claims description 46
- 230000008020 evaporation Effects 0.000 claims description 15
- 238000001704 evaporation Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims 4
- 239000007924 injection Substances 0.000 claims 4
- 239000010408 film Substances 0.000 description 221
- 239000007789 gas Substances 0.000 description 37
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 4
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000006557 surface reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0466—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a non-reacting gas
- B05D3/0473—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being a non-reacting gas for heating, e.g. vapour heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0493—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases using vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Description
複数の基板を互いに離隔して支持する基板支持容器と、
前記基板支持容器を収納し、前記基板上に原料モノマーを供給し、熱重合を通じて有機膜の形成を行うための成膜容器と、
前記成膜容器に設けられた前記原料モノマーの供給器と、
前記成膜容器の壁面に沿って設けられた外部ヒータと、
前記外部ヒータと離隔し、前記基板支持容器に近接して配置された内部ヒータとを具え、
前記外部ヒータは、前記成膜容器の前記壁面を前記原料モノマーの蒸発温度以上に加熱し、
前記内部ヒータは、前記基板を前記原料モノマーの熱重合反応温度に加熱することを特徴とする、成膜装置に関する。
成膜容器内に収納された基板支持容器内に、複数の基板を互いに離隔して支持する工程と、
前記成膜容器の壁面に沿って設けられた外部ヒータによって、前記成膜容器の前記壁面を有機膜の形成に供する原料モノマーの蒸発温度以上に加熱する工程と、
前記外部ヒータと離隔し、前記基板支持容器に近接して配置された内部ヒータによって、前記基板を前記原料モノマーの熱重合反応温度に加熱する工程と、
前記成膜容器に設けられた供給器から、前記成膜容器内に前記原料モノマーを供給し、前記基板上での熱重合を通じて前記有機膜を形成する工程と、
を具えることを特徴とする、成膜方法に関する。
図1は、本発明の成膜装置の構成の一例を概略的に示す構成図である。
図2は、本発明の成膜装置の構成の他の例を概略的に示す構成図である。なお、図1に示す成膜装置10と同一あるいは類似の構成要素に関しては同一の参照数字を用いている。
図3は、本発明の成膜装置の構成のその他の例を概略的に示す構成図であり、図4は、図3に示す成膜装置に使用するガス導入管の構成を概略的に示す図である。なお、図1に示す成膜装置10と同一あるいは類似の構成要素に関しては同一の参照数字を用いている。
図5は、本参考例で使用する成膜装置の構成を概略的に示す構成図であり、図6は、本参考例における成膜方法の概略工程図である。
本実施形態では、上記実施形態において説明した成膜装置及び成膜方法を用いて得た有機膜の応用に関して説明する。
11 成膜容器
12 ボート
13 内部ヒータ
14 外部ヒータ
15,17 供給管
16 排気管
18 追加の供給管
151 第1のガス導入管
152 第2のガス導入管
Claims (14)
- 複数の基板を互いに離隔して支持する基板支持容器と、
前記基板支持容器を収納し、前記基板上に原料モノマーを供給し、熱重合を通じて有機膜の形成を行うための成膜容器と、
前記成膜容器に設けられた前記原料モノマーの供給器と、
前記成膜容器の壁面に沿って設けられた外部ヒータと、
前記外部ヒータと離隔し、前記基板支持容器に近接して配置された内部ヒータとを具え、
前記外部ヒータは、前記成膜容器の前記壁面を前記原料モノマーの熱重合反応温度より高い蒸発温度以上の温度に加熱し、
前記内部ヒータは、前記基板を前記原料モノマーの熱重合反応温度に加熱することを特徴とする、成膜装置。 - 前記外部ヒータと前記内部ヒータとの間は、減圧状態に保持されていることを特徴とする、請求項1に記載の成膜装置。
- 前記外部ヒータと前記内部ヒータとの間に、加熱ガスを流すことを特徴とする、請求項1に記載の成膜装置。
- 前記加熱ガスは、前記熱重合反応温度に加熱されていることを特徴とする、請求項3に記載の成膜装置。
- 前記基板は、有機膜形成用基板と、この有機膜形成用基板の裏面に貼付された支持基板とを含むことを特徴とする、請求項1〜4のいずれか一に記載の成膜装置。
- 前記供給器は、下方から上方へ立ち上がり先端が閉塞された直管からなり、その管壁に前記原料モノマーを噴射するガス噴出孔を所定の間隔で形成されてなる第1のガス導入管と、下方から上方へ折り返されて先端が閉塞されたU字管からなり、その下方へ折り返された部分の管壁に前記原料モノマーを噴出するガス噴出孔を所定の間隔で形成した第2のガス導入管を含むことを特徴とする、請求項1〜5のいずれか一に記載の成膜装置。
- 前記有機膜は、半導体集積回路における貫通ビア絶縁膜を構成することを特徴とする、請求項1〜6のいずれか一に記載の成膜装置。
- 成膜容器内に収納された基板支持容器内に、複数の基板を互いに離隔して支持する工程と、
前記成膜容器の壁面に沿って設けられた外部ヒータによって、前記成膜容器の前記壁面を有機膜の形成に供する原料モノマーの熱重合反応温度より高いかつ蒸発温度以上に加熱する工程と、
前記外部ヒータと離隔し、前記基板支持容器に近接して配置された内部ヒータによって、前記基板を前記原料モノマーの熱重合反応温度に加熱する工程と、
前記成膜容器に設けられた供給器から、前記成膜容器内に前記原料モノマーを供給し、前記基板上での熱重合を通じて前記有機膜を形成する工程と、
を具えることを特徴とする、成膜方法。 - 前記外部ヒータと前記内部ヒータとの間は、減圧状態に保持することを特徴とする、請求項8に記載の成膜方法。
- 前記外部ヒータと前記内部ヒータとの間に、加熱ガスを流すことを特徴とする、請求項8に記載の成膜方法。
- 前記加熱ガスを、前記熱重合反応温度に加熱することを特徴とする、請求項10に記載の成膜方法。
- 前記基板を、有機膜形成用基板と、この有機膜形成用基板の裏面に貼付された支持基板とを含むように構成し、前記有機膜を前記有機膜形成用基板の表面上に形成することを特徴とする、請求項8〜11のいずれか一に記載の成膜方法。
- 前記供給器は、下方から上方へ立ち上がり先端が閉塞された直管からなり、その管壁に前記原料モノマーを噴射するガス噴出孔を所定の間隔で形成されてなる第1のガス導入管と、下方から上方へ折り返されて先端が閉塞されたU字管からなり、その下方へ折り返された部分の管壁に前記原料モノマーを噴出するガス噴出孔を所定の間隔で形成した第2のガス導入管を含み、前記基板の表面上への前記原料モノマーの供給量を均一とすることを特徴とする、請求項8〜12のいずれか一に記載の成膜方法。
- 前記有機膜は、半導体集積回路における貫通ビア絶縁膜を構成することを特徴とする、請求項8〜13のいずれか一に記載の成膜方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008078814A JP5198106B2 (ja) | 2008-03-25 | 2008-03-25 | 成膜装置、及び成膜方法 |
PCT/JP2009/055034 WO2009119365A1 (ja) | 2008-03-25 | 2009-03-16 | 成膜装置、及び成膜方法 |
KR1020107018421A KR20100102228A (ko) | 2008-03-25 | 2009-03-16 | 성막 장치 및, 성막 방법 |
US12/934,165 US8470720B2 (en) | 2008-03-25 | 2009-03-16 | Film forming apparatus and film forming method |
TW098109342A TWI413186B (zh) | 2008-03-25 | 2009-03-23 | 成膜方法 |
Applications Claiming Priority (1)
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Families Citing this family (37)
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JP5243519B2 (ja) | 2010-12-22 | 2013-07-24 | 東京エレクトロン株式会社 | 成膜装置 |
JP5604289B2 (ja) * | 2010-12-22 | 2014-10-08 | 東京エレクトロン株式会社 | 成膜装置 |
US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
JP6111171B2 (ja) * | 2013-09-02 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
TWI686499B (zh) | 2014-02-04 | 2020-03-01 | 荷蘭商Asm Ip控股公司 | 金屬、金屬氧化物與介電質的選擇性沉積 |
JP6254459B2 (ja) * | 2014-02-27 | 2017-12-27 | 東京エレクトロン株式会社 | 重合膜の耐薬品性改善方法、重合膜の成膜方法、成膜装置、および電子製品の製造方法 |
US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
US9490145B2 (en) | 2015-02-23 | 2016-11-08 | Asm Ip Holding B.V. | Removal of surface passivation |
JP6435967B2 (ja) * | 2015-03-31 | 2018-12-12 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP6560924B2 (ja) * | 2015-07-29 | 2019-08-14 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
US10121699B2 (en) | 2015-08-05 | 2018-11-06 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US10566185B2 (en) | 2015-08-05 | 2020-02-18 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US10814349B2 (en) | 2015-10-09 | 2020-10-27 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US10343186B2 (en) * | 2015-10-09 | 2019-07-09 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US10695794B2 (en) * | 2015-10-09 | 2020-06-30 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US10204782B2 (en) | 2016-04-18 | 2019-02-12 | Imec Vzw | Combined anneal and selective deposition process |
KR102182550B1 (ko) | 2016-04-18 | 2020-11-25 | 에이에스엠 아이피 홀딩 비.브이. | 유도된 자기-조립층을 기판 상에 형성하는 방법 |
US11081342B2 (en) | 2016-05-05 | 2021-08-03 | Asm Ip Holding B.V. | Selective deposition using hydrophobic precursors |
US10373820B2 (en) | 2016-06-01 | 2019-08-06 | Asm Ip Holding B.V. | Deposition of organic films |
US10453701B2 (en) | 2016-06-01 | 2019-10-22 | Asm Ip Holding B.V. | Deposition of organic films |
US9803277B1 (en) | 2016-06-08 | 2017-10-31 | Asm Ip Holding B.V. | Reaction chamber passivation and selective deposition of metallic films |
US11430656B2 (en) | 2016-11-29 | 2022-08-30 | Asm Ip Holding B.V. | Deposition of oxide thin films |
US11094535B2 (en) | 2017-02-14 | 2021-08-17 | Asm Ip Holding B.V. | Selective passivation and selective deposition |
JP6737215B2 (ja) * | 2017-03-16 | 2020-08-05 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
US11501965B2 (en) | 2017-05-05 | 2022-11-15 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
KR20200007823A (ko) | 2017-05-16 | 2020-01-22 | 에이에스엠 아이피 홀딩 비.브이. | 유전체 상에 옥사이드의 선택적 peald |
US10900120B2 (en) | 2017-07-14 | 2021-01-26 | Asm Ip Holding B.V. | Passivation against vapor deposition |
JP7093667B2 (ja) * | 2018-04-11 | 2022-06-30 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP7146690B2 (ja) | 2018-05-02 | 2022-10-04 | エーエスエム アイピー ホールディング ビー.ブイ. | 堆積および除去を使用した選択的層形成 |
JP2020056104A (ja) | 2018-10-02 | 2020-04-09 | エーエスエム アイピー ホールディング ビー.ブイ. | 選択的パッシベーションおよび選択的堆積 |
US11965238B2 (en) | 2019-04-12 | 2024-04-23 | Asm Ip Holding B.V. | Selective deposition of metal oxides on metal surfaces |
US11139163B2 (en) | 2019-10-31 | 2021-10-05 | Asm Ip Holding B.V. | Selective deposition of SiOC thin films |
TW202140833A (zh) | 2020-03-30 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 相對於金屬表面在介電表面上之氧化矽的選擇性沉積 |
TW202140832A (zh) | 2020-03-30 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽在金屬表面上之選擇性沉積 |
TW202204658A (zh) | 2020-03-30 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 在兩不同表面上同時選擇性沉積兩不同材料 |
JP2022118629A (ja) * | 2021-02-02 | 2022-08-15 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0445259A (ja) * | 1990-06-11 | 1992-02-14 | Ulvac Japan Ltd | 成膜装置 |
JPH06310454A (ja) * | 1993-04-21 | 1994-11-04 | Fuji Electric Co Ltd | ホットウォール型熱処理装置 |
JP3758696B2 (ja) | 1994-12-20 | 2006-03-22 | 独立行政法人科学技術振興機構 | 分子配向有機膜の製造法 |
JP3567613B2 (ja) * | 1996-05-28 | 2004-09-22 | 松下電工株式会社 | 蒸着重合装置 |
JPH09330884A (ja) * | 1996-06-07 | 1997-12-22 | Sony Corp | エピタキシャル成長装置 |
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
US6709715B1 (en) * | 1999-06-17 | 2004-03-23 | Applied Materials Inc. | Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds |
JP4031601B2 (ja) | 1999-10-07 | 2008-01-09 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP4061802B2 (ja) * | 2000-01-25 | 2008-03-19 | 松下電工株式会社 | 蒸着槽 |
JP2002285320A (ja) * | 2001-03-27 | 2002-10-03 | Fukushima Prefecture | 有機高分子薄膜の形成方法 |
JP4506953B2 (ja) * | 2004-05-28 | 2010-07-21 | 日本電気株式会社 | 共重合高分子膜およびその作製方法 |
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- 2009-03-16 US US12/934,165 patent/US8470720B2/en not_active Expired - Fee Related
- 2009-03-16 WO PCT/JP2009/055034 patent/WO2009119365A1/ja active Application Filing
- 2009-03-23 TW TW098109342A patent/TWI413186B/zh active
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US8470720B2 (en) | 2013-06-25 |
KR20100102228A (ko) | 2010-09-20 |
WO2009119365A1 (ja) | 2009-10-01 |
JP2009231783A (ja) | 2009-10-08 |
TW201005827A (en) | 2010-02-01 |
TWI413186B (zh) | 2013-10-21 |
US20110039420A1 (en) | 2011-02-17 |
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