JP5194359B2 - イグナイタ用逆耐圧フィールドストップ型半導体装置 - Google Patents
イグナイタ用逆耐圧フィールドストップ型半導体装置 Download PDFInfo
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- JP5194359B2 JP5194359B2 JP2005357160A JP2005357160A JP5194359B2 JP 5194359 B2 JP5194359 B2 JP 5194359B2 JP 2005357160 A JP2005357160 A JP 2005357160A JP 2005357160 A JP2005357160 A JP 2005357160A JP 5194359 B2 JP5194359 B2 JP 5194359B2
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- 230000015556 catabolic process Effects 0.000 title claims description 41
- 239000004065 semiconductor Substances 0.000 title claims description 41
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- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
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- 229910052710 silicon Inorganic materials 0.000 description 4
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- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000001994 activation Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
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- 238000005468 ion implantation Methods 0.000 description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- -1 Boron ions Chemical class 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
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Images
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
2、 分離拡散層
3、 MOSゲート構造
4、 耐圧構造部
5、 pベース層
6、 n+エミッタ層
7、 ゲート酸化膜
8、 ゲート電極
9、 エミッタ電極
10、 フィールドストップ層
11、 pコレクタ層
12、 切断部
13、 コレクタ電極
14、 コンタクト部
15、 補助電極
16、 フィールド酸化膜
17、 ツェナーダイオード群
18、 逆阻止型のFS−IGBT
19、 イグナイタ回路IC。
Claims (5)
- 一導電型の半導体基板に、該半導体基板の一方の主面と他方の主面とを繋ぐ他導電型の分離拡散領域と、該分離拡散領域に取り囲まれた前記一方の主面にMOSゲート構造と該MOSゲート構造を取り囲む耐圧構造部とを備え、前記分離拡散領域に取り囲まれた前記他方の主面の全面には、露出する前記分離拡散領域に接する他導電型コレクタ領域と、該コレクタ領域の前記半導体基板側に接する一導電型フィールドストップ層を備えるイグナイタ用逆耐圧フィールドストップ型半導体装置であって、前記一導電型フィールドストップ層の厚みを前記他導電型コレクタ領域の厚みの10乃至100倍とし、前記他導電型コレクタ領域と前記一導電型フィールドストップ層とにより形成されるpn接合の逆耐圧値が前記イグナイタ用逆耐圧フィールドストップ型半導体装置の順耐圧値の少なくとも1/10以上1/3以下有していることを特徴とするイグナイタ用逆耐圧フィールドストップ型半導体装置。
- 前記コレクタ領域と、前記MOSゲート構造を構成するゲート領域との間に接続されるダイオードを備えることを特徴とする請求項1に記載のイグナイタ用逆耐圧フィールドストップ型半導体装置。
- 前記ダイオードが前記耐圧構造部上に絶縁膜を挟んで層状に堆積形成されるダイオードであることを特徴とする請求項2に記載のイグナイタ用逆耐圧フィールドストップ型半導体装置。
- 前記ダイオードが双方向ダイオードであることを特徴とする請求項2または3に記載のイグナイタ用逆耐圧フィールドストップ型半導体装置。
- 前記イグナイタ用逆耐圧フィールドストップ型半導体装置が、該半導体装置を制御するIC回路を同一半導体基板に備えることを特徴とする請求項1乃至4のいずれか一項に記載のイグナイタ用逆耐圧フィールドストップ型半導体装置。
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JP2005357160A JP5194359B2 (ja) | 2005-12-12 | 2005-12-12 | イグナイタ用逆耐圧フィールドストップ型半導体装置 |
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JP2005357160A JP5194359B2 (ja) | 2005-12-12 | 2005-12-12 | イグナイタ用逆耐圧フィールドストップ型半導体装置 |
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JP2007165424A JP2007165424A (ja) | 2007-06-28 |
JP5194359B2 true JP5194359B2 (ja) | 2013-05-08 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5596278B2 (ja) * | 2007-07-10 | 2014-09-24 | 富士電機株式会社 | トレンチ型絶縁ゲートmos半導体装置 |
JP5332175B2 (ja) | 2007-10-24 | 2013-11-06 | 富士電機株式会社 | 制御回路を備える半導体装置 |
JP5609087B2 (ja) * | 2009-12-04 | 2014-10-22 | 富士電機株式会社 | 内燃機関点火装置用半導体装置 |
JP5672856B2 (ja) * | 2010-08-25 | 2015-02-18 | 株式会社デンソー | 半導体装置 |
US8794151B2 (en) * | 2010-11-19 | 2014-08-05 | Wafertech, Llc | Silicided MOS capacitor explosive device initiator |
US10923562B2 (en) | 2016-08-19 | 2021-02-16 | Rohm Co., Ltd. | Semiconductor device, and method for manufacturing semicondcutor device |
US10424578B2 (en) | 2016-09-13 | 2019-09-24 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor device and method of manufacturing the same |
WO2018061177A1 (ja) | 2016-09-30 | 2018-04-05 | 新電元工業株式会社 | 半導体装置 |
CN108122741B (zh) * | 2016-11-29 | 2021-07-02 | 上海微电子装备(集团)股份有限公司 | 一种扩散片退火工艺 |
US10366976B2 (en) | 2016-12-22 | 2019-07-30 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04192366A (ja) * | 1990-11-26 | 1992-07-10 | Hitachi Ltd | 半導体装置及び点火プラグの放電回路 |
JP3911566B2 (ja) * | 1998-01-27 | 2007-05-09 | 富士電機デバイステクノロジー株式会社 | Mos型半導体装置 |
JP3443791B2 (ja) * | 2000-02-25 | 2003-09-08 | 株式会社日立製作所 | 半導体装置 |
JP3918625B2 (ja) * | 2002-04-25 | 2007-05-23 | 富士電機デバイステクノロジー株式会社 | 半導体装置およびその製造方法 |
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