JP5185213B2 - 耐プラズマ性フッ化物焼結体の製造方法 - Google Patents
耐プラズマ性フッ化物焼結体の製造方法 Download PDFInfo
- Publication number
- JP5185213B2 JP5185213B2 JP2009142911A JP2009142911A JP5185213B2 JP 5185213 B2 JP5185213 B2 JP 5185213B2 JP 2009142911 A JP2009142911 A JP 2009142911A JP 2009142911 A JP2009142911 A JP 2009142911A JP 5185213 B2 JP5185213 B2 JP 5185213B2
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- hours
- sintering
- caf
- mgf
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 title claims description 18
- 238000005245 sintering Methods 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 56
- 230000008569 process Effects 0.000 claims description 46
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 41
- 239000000843 powder Substances 0.000 claims description 25
- 238000002156 mixing Methods 0.000 claims description 17
- 238000000465 moulding Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 40
- 239000002245 particle Substances 0.000 description 26
- 239000007858 starting material Substances 0.000 description 22
- 239000013078 crystal Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 20
- 239000002994 raw material Substances 0.000 description 20
- 230000002776 aggregation Effects 0.000 description 17
- 238000012545 processing Methods 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000006104 solid solution Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000005054 agglomeration Methods 0.000 description 9
- 238000011109 contamination Methods 0.000 description 9
- 238000000280 densification Methods 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000004220 aggregation Methods 0.000 description 8
- 239000001768 carboxy methyl cellulose Substances 0.000 description 8
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 8
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000010587 phase diagram Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 3
- 239000008116 calcium stearate Substances 0.000 description 3
- 235000013539 calcium stearate Nutrition 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Description
しかしながらこの発明では、まず出発原料が低純度であり、したがって通常、不純物の種類、濃度が一定しない。そのためその都度分析を行い、その出発原料に合わせてフッ化水素酸を用いた純化処理の条件をその都度変える必要が有る。さらには、不純物の種類・その濃度など出発原料中の不純物の状況によっては沈殿処理法では純化が十分行えない場合も生じる。このため、純化処理後の中間生成物は、純度をはじめ物性が不安定となる。この製造方法では、純度を高められる可能性があるのはこの純化処理工程に限られ、結果的に、最終製品である焼結体の物性も不安定なものとなる。言い換えれば、良好な特性を有する焼結体を安定的に得ることは困難な方法と言わざるを得ない。
Claims (3)
- 緻密な構造のCaF2−MgF2二元系焼結体からなる耐プラズマ性フッ化物焼結体の製造方法であって、
高純度CaF2粉末に高純度MgF2粉末を1〜5wt.%混合し、さらに焼結助剤を0.1〜1wt.%添加して混合する工程、
金型及びプレス成形機を用いてプレス圧0.2MPa/ cm2以上で成形する工程、
その成形品を大気雰囲気中で600〜700℃に加熱して仮焼結を行う工程、
大気雰囲気中で1250〜1370℃の温度範囲で6〜12時間加熱して緻密な構造のCaF2−MgF2二元系焼結体を形成する工程、
を含むことを特徴とする耐プラズマ性フッ化物焼結体の製造方法。 - 請求項1記載のCaF2−MgF2二元系焼結体形成工程に代えて、加熱雰囲気を不活性ガス雰囲気とし、1220〜1350℃の温度範囲で6〜12時間加熱して緻密な構造のCaF2−MgF2二元系焼結体を形成する工程を含み、
その他の工程は、請求項1記載の各工程と同じであることを特徴とする耐プラズマ性フッ化物焼結体の製造方法。 - 請求項1記載の焼結体形成工程に代えて、加熱雰囲気を10-2Pa以下の高真空とし、1205〜1330℃の温度範囲で6〜12時間加熱して緻密な構造のCaF2−MgF2二元系焼結体を形成する工程を含み、
その他の工程は、請求項1記載の各工程と同じであることを特徴とする耐プラズマ性フッ化物焼結体の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009142911A JP5185213B2 (ja) | 2009-06-16 | 2009-06-16 | 耐プラズマ性フッ化物焼結体の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009142911A JP5185213B2 (ja) | 2009-06-16 | 2009-06-16 | 耐プラズマ性フッ化物焼結体の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011001198A JP2011001198A (ja) | 2011-01-06 |
JP5185213B2 true JP5185213B2 (ja) | 2013-04-17 |
Family
ID=43559502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009142911A Active JP5185213B2 (ja) | 2009-06-16 | 2009-06-16 | 耐プラズマ性フッ化物焼結体の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5185213B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011098856A (ja) * | 2009-11-05 | 2011-05-19 | Daiko Seisakusho:Kk | CaF2−MgF2二元系焼結体、及び耐プラズマ性フッ化物焼結体の製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9789335B2 (en) * | 2014-09-24 | 2017-10-17 | Techno Eye Corporation | MgF2—CaF2 binary system sintered body for radiation moderator and method for producing the same |
CN110981484B (zh) * | 2019-11-21 | 2021-10-15 | 天津津航技术物理研究所 | 一种热压法制备纳米级氟化镁透明陶瓷的方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000072554A (ja) * | 1998-08-20 | 2000-03-07 | Taiheiyo Cement Corp | 弗化物セラミックス焼結体およびその製造方法 |
JP3618048B2 (ja) * | 1998-09-14 | 2005-02-09 | 京セラ株式会社 | 半導体製造装置用部材 |
JP2000233969A (ja) * | 1998-12-08 | 2000-08-29 | Tosoh Corp | Itoスパッタリングターゲットおよび透明導電膜の製造方法 |
JP4283925B2 (ja) * | 1999-01-27 | 2009-06-24 | 太平洋セメント株式会社 | 耐蝕性部材 |
JP2003115478A (ja) * | 2001-10-05 | 2003-04-18 | Toshiba Ceramics Co Ltd | プラズマ処理装置用窓部材 |
JP2004083362A (ja) * | 2002-08-28 | 2004-03-18 | Toshiba Ceramics Co Ltd | フッ化物セラミックス焼結体及びその製造方法 |
JP4747587B2 (ja) * | 2005-01-27 | 2011-08-17 | 株式会社ニコン | フッ化カルシウム焼結体の製造方法 |
-
2009
- 2009-06-16 JP JP2009142911A patent/JP5185213B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011098856A (ja) * | 2009-11-05 | 2011-05-19 | Daiko Seisakusho:Kk | CaF2−MgF2二元系焼結体、及び耐プラズマ性フッ化物焼結体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2011001198A (ja) | 2011-01-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4907735B2 (ja) | シリカ容器及びその製造方法 | |
JP5462423B1 (ja) | 単結晶シリコン引き上げ用シリカ容器及びその製造方法 | |
WO2014167788A1 (ja) | 単結晶シリコン引き上げ用シリカ容器及びその製造方法 | |
JP5578507B2 (ja) | CaF2−MgF2二元系焼結体、及び耐プラズマ性フッ化物焼結体の製造方法 | |
JP5608257B1 (ja) | 単結晶シリコン引き上げ用シリカ容器及びその製造方法 | |
TWI773135B (zh) | 陶瓷部件、其製備方法以及聚焦環 | |
JP5185213B2 (ja) | 耐プラズマ性フッ化物焼結体の製造方法 | |
US9580331B2 (en) | CaF2 polycrystalline body, focus ring, plasma processing apparatus, and method for producing CaF2 polycrystalline body | |
JP5969493B2 (ja) | スパッタリングターゲットおよびその製造方法 | |
JP5711511B2 (ja) | CaF2−MgF2二元系焼結体、及び耐プラズマ性フッ化物焼結体の製造方法 | |
KR101945145B1 (ko) | 산화물 소결체 | |
JP5497247B1 (ja) | 単結晶シリコン引き上げ用シリカ容器及びその製造方法 | |
TWI612186B (zh) | 多晶CaF構件、電漿處理裝置用構件、電漿處理裝置及聚焦環之製造方法 | |
JP2003112963A (ja) | アルミナ焼結体およびその製造方法 | |
WO2013171955A1 (ja) | 単結晶シリコン引き上げ用シリカ容器及びその製造方法 | |
JP2005139018A (ja) | 不透明シリカガラス成形体及びその製造方法 | |
TW202302495A (zh) | 用於耐電漿材料之氧化釔-氧化鋯燒結陶瓷 | |
JP2007223828A (ja) | イットリアセラミックス焼結体およびその製造方法 | |
JP2003300777A (ja) | 高純度フッ化カルシウム焼結体およびその製造方法 | |
JP2001233676A (ja) | プラズマ耐食部材及びその製造方法 | |
US9908282B2 (en) | Method for producing a semiconductor using a vacuum furnace | |
WO2012104948A1 (ja) | 多結晶シリコンインゴット製造用角形シリカ容器並びに多孔質シリカ板体及びその製造方法 | |
CN115215541A (zh) | 玻璃及其制造方法、使用玻璃的构件和装置 | |
JP2023098596A (ja) | アルミナ焼結体及びその製造方法 | |
KR20230079753A (ko) | 아크 용융을 이용한 세라믹스 분말 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120426 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121225 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130117 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5185213 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160125 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |