JP5136867B2 - 半導体基板、半導体装置、および半導体基板の製造方法 - Google Patents
半導体基板、半導体装置、および半導体基板の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 170
- 239000000758 substrate Substances 0.000 title claims abstract description 141
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 100
- 150000004767 nitrides Chemical class 0.000 claims abstract description 92
- 238000000034 method Methods 0.000 claims description 18
- 229910002704 AlGaN Inorganic materials 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 13
- 238000005121 nitriding Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 230000005669 field effect Effects 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 98
- 229910002601 GaN Inorganic materials 0.000 description 97
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 62
- 238000002441 X-ray diffraction Methods 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 230000001629 suppression Effects 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- -1 Nitride compound Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 235000019219 chocolate Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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Description
特許文献1 特開2007−251144号公報
非特許文献1 J. E. Northrup, "Screw dislocations in GaN: The Ga-filled core model", Appl. Phys. Lett., American Institute of Physics, 2001, Vol. 78, Issue 16, p. 2288
非特許文献2 Debdeep Jana, et. al., "Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases", Appl. Phys. Lett., American Institute of Physics, 2002, Vol. 80, Issue 1, p. 64
Claims (13)
- シリコン基板と、
前記シリコン基板の(150)面上に、エピタキシャル成長された窒化物半導体層と、を備え、
前記窒化物半導体層が、GaN、AlGaN、およびAlNのいずれか、あるいは、これらを積層した層であり、
前記窒化物半導体層の成長面が(0001)面である半導体基板。 - 前記シリコン基板と、前記窒化物半導体層の間に形成された窒化珪素層をさらに備える請求項1に記載の半導体基板。
- 前記窒化珪素層が、2原子層以下の厚さである、請求項2に記載の半導体基板。
- 前記シリコン基板が、CZ法で成長したシリコン単結晶から切り出された請求項1から3のいずれか一項に記載の半導体基板。
- 請求項1から4のいずれか一項の半導体基板に形成された半導体装置。
- 前記窒化物半導体層が、電子が走行する電子走行層であり、
前記半導体装置が電界効果トランジスタである請求項5に記載の半導体装置。 - 移動度が1400cm2/Vs以上である請求項6に記載の半導体装置。
- ショットキーバリアダイオード、および、MOSトランジスタのいずれかである、請求項5に記載の半導体装置。
- シリコン基板の(150)面上に、窒化物半導体からなる窒化物半導体層をエピタキシャル成長する窒化物半導体層形成段階を備え、
前記窒化物半導体層が、GaN、AlGaN、およびAlNのいずれか、あるいは、これらを積層した層であり、
前記窒化物半導体層の成長面が(0001)面である半導体基板の製造方法。 - 前記窒化物半導体層形成段階の前に、前記シリコン基板の(150)面を窒化して窒化珪素層を形成する工程をさらに備える請求項9に記載の半導体基板の製造方法。
- 前記窒化珪素層が2原子層以下の膜厚である、請求項10に記載の半導体基板の製造方法。
- 前記シリコン基板が、CZ法で成長したシリコン単結晶から切り出された請求項9から11のいずれか一項に記載の半導体基板の製造方法。
- 請求項9から12のいずれか一項に記載の半導体基板の製造方法によって製造された半導体基板上に形成された半導体装置。
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JP2011022086A JP5136867B2 (ja) | 2011-02-03 | 2011-02-03 | 半導体基板、半導体装置、および半導体基板の製造方法 |
KR1020137018263A KR20140045303A (ko) | 2011-02-03 | 2012-01-23 | 반도체 기판, 반도체 장치, 및 반도체 기판의 제조 방법 |
EP12741613.9A EP2672510A4 (en) | 2011-02-03 | 2012-01-23 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE |
CN2012800041566A CN103262214A (zh) | 2011-02-03 | 2012-01-23 | 半导体基板、半导体装置、以及半导体基板的制造方法 |
PCT/JP2012/000406 WO2012105179A1 (ja) | 2011-02-03 | 2012-01-23 | 半導体基板、半導体装置、および半導体基板の製造方法 |
US13/952,649 US9099383B2 (en) | 2011-02-03 | 2013-07-28 | Semiconductor substrate and semiconductor device, and manufacturing method of semiconductor substrate |
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JP2015002341A (ja) * | 2013-06-18 | 2015-01-05 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP2015060883A (ja) * | 2013-09-17 | 2015-03-30 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
CN104465373A (zh) * | 2014-10-28 | 2015-03-25 | 中国电子科技集团公司第五十五研究所 | 在硅片上制作氮化镓高电子迁移率晶体管的方法 |
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US20040224459A1 (en) * | 1999-07-07 | 2004-11-11 | Matsushita Electric Industrial Co., Ltd. | Layered structure, method for manufacturing the same, and semiconductor element |
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US7012016B2 (en) * | 2003-11-18 | 2006-03-14 | Shangjr Gwo | Method for growing group-III nitride semiconductor heterostructure on silicon substrate |
US7687827B2 (en) * | 2004-07-07 | 2010-03-30 | Nitronex Corporation | III-nitride materials including low dislocation densities and methods associated with the same |
CN100418199C (zh) * | 2004-07-28 | 2008-09-10 | 中国科学院半导体研究所 | 铝镓氮/氮化镓高电子迁移率晶体管的制作方法 |
JP2006140397A (ja) * | 2004-11-15 | 2006-06-01 | Ritsumeikan | 窒化物系化合物半導体製造装置 |
CN100397655C (zh) * | 2004-12-02 | 2008-06-25 | 中国科学院半导体研究所 | 提高氮化镓基高电子迁移率晶体管性能的结构及制作方法 |
JP2006196631A (ja) * | 2005-01-13 | 2006-07-27 | Hitachi Ltd | 半導体装置及びその製造方法 |
ITVA20050034A1 (it) * | 2005-05-13 | 2006-11-14 | St Microelectronics Srl | Celle a combustibile realizzate in un singolo strato di silicio monocristallino e processo di fabbricazione |
US7338826B2 (en) * | 2005-12-09 | 2008-03-04 | The United States Of America As Represented By The Secretary Of The Navy | Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs |
JP5064824B2 (ja) | 2006-02-20 | 2012-10-31 | 古河電気工業株式会社 | 半導体素子 |
JP2008141187A (ja) | 2006-11-09 | 2008-06-19 | Matsushita Electric Ind Co Ltd | 窒化物半導体レーザ装置 |
US20110095335A1 (en) | 2008-07-03 | 2011-04-28 | Panasonic Corporation | Nitride semiconductor device |
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2011
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- 2012-01-23 KR KR1020137018263A patent/KR20140045303A/ko not_active Application Discontinuation
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EP2672510A1 (en) | 2013-12-11 |
US20130306979A1 (en) | 2013-11-21 |
EP2672510A4 (en) | 2015-07-15 |
CN103262214A (zh) | 2013-08-21 |
JP2012164717A (ja) | 2012-08-30 |
US9099383B2 (en) | 2015-08-04 |
KR20140045303A (ko) | 2014-04-16 |
WO2012105179A1 (ja) | 2012-08-09 |
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