JP5113317B2 - 寄生バイポーラトランジスタ作用を減少したmos構造を有する集積回路 - Google Patents
寄生バイポーラトランジスタ作用を減少したmos構造を有する集積回路 Download PDFInfo
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- 230000003071 parasitic effect Effects 0.000 title claims abstract description 26
- 230000009471 action Effects 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 153
- 239000000463 material Substances 0.000 claims abstract description 130
- 210000000746 body region Anatomy 0.000 claims abstract description 73
- 239000004065 semiconductor Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 34
- 229910044991 metal oxide Inorganic materials 0.000 claims description 33
- 150000004706 metal oxides Chemical class 0.000 claims description 33
- 238000002513 implantation Methods 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 230000010354 integration Effects 0.000 claims 2
- 230000009977 dual effect Effects 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 239000007787 solid Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000012899 standard injection Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Description
Claims (36)
- 加工表面を有する基板、
基板の加工表面に隣接して基板に形成された第1の導電型の少なくとも1つの本体領域、
各本体領域の狭いバンドギャップ材料の層、ここで狭いバンドギャップ材料の各層はチャネル領域の少なくとも一部によりドレイン領域から距離をおいて配置され、連携する本体領域の部分に、基板の加工表面に隣接して配置し、狭いバンドギャップ材料の各層は本体領域の各々が形成される基板のバンドギャップより狭いバンドギャップを有する、及び
本体領域の各々に形成された第2の導電型のソース領域を含む金属酸化物半導体(MOS)集積回路素子において、各ソース領域の少なくとも一部が、連携する狭いバンドギャップ材料の層に形成されることを特徴とする金属酸化物半導体(MOS)集積回路素子。 - 狭いバンドギャップ材料の各層はソース領域の各々から連携する本体領域中へのキャリアー注入を抑制し、それにより寄生HFEを減少することを特徴とする請求項1記載の金属酸化物半導体(MOS)集積回路素子。
- 狭いバンドギャップ材料の各層は連携する本体領域に基板の加工表面に隣接して形成することを特徴とする請求項1記載の金属酸化物半導体(MOS)集積回路素子。
- 狭いバンドギャップ材料の各層はSiGeを含むことを特徴とする請求項1記載の金属酸化物半導体(MOS)集積回路素子。
- ソース領域は、基板の加工表面から狭いバンドギャップ材料の層よりも深く形成されることを特徴とする請求項1記載の金属酸化物半導体(MOS)集積回路素子。
- 更に、ゲート、及び
基板に形成されたドレイン領域を含むことを特徴とする請求項1記載の金属酸化物半導体(MOS)集積回路素子。 - ドレイン領域は基板の表面に結合したドレインコンタクトを含むことを特徴とする請求項6記載の金属酸化物半導体(MOS)集積回路素子。
- ゲートは基板の加工表面の近傍に堆積されることを特徴とする請求項6記載の金属酸化物半導体(MOS)集積回路素子。
- ゲートは基板に形成されたトレンチゲートであることを特徴とする請求項6記載の金属酸化物半導体(MOS)集積回路素子。
- 表面を有する基板、
基板の表面に隣接して基板に形成された1つ以上の第1の導電型の周本体領域、
少なくとも1つの周本体領域に形成された高ドーピング密度の第2の導電型のソース、及び
基板の表面と周本体領域に隣接して配置された狭いバンドギャップ材料の層であって、周本体領域の最大バンドギャップより狭いバンドギャップを有する狭いバンドギャップ材料の層を含む、集積回路用の縦型二重拡散金属酸化物半導体(DMOS)トランジスタにおいて、各ソースの少なくとも一部が、狭いバンドギャップ材料の層に形成され、チャネル領域の少なくとも一部が狭いバンドギャップ材料の層に形成されており、狭いバンドギャップ材料の層がチャネル領域の少なくとも一部によりドレイン領域から距離をおいて配置されることを特徴とする集積回路用の縦型二重拡散金属酸化物半導体(DMOS)トランジスタ。 - 狭いバンドギャップ材料は寄生バイポーラトランジスタ作用を減少するのに使用することを特徴とする請求項10記載の集積回路用の縦型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- 狭いバンドギャップ材料の層はSiGe合金で作られていることを特徴とする請求項10記載の集積回路用の縦型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- 基板の表面上に堆積されたゲートを含むことを特徴とする請求項10記載の集積回路用
の縦型二重拡散金属酸化物半導体(DMOS)トランジスタ。 - 基板に形成された高ドーピング密度の第2の導電型の埋込み層、
基板に形成された低ドーピング密度の第2の導電型のエピタキシャル層、ここで埋込み層はエピタキシャル層と低ドーピング密度の第1の導電型の基板の領域との間に配置する、
埋込み層を基板の表面に接続するようにエピタキシャル層を通って埋込み層まで形成された高ドーピング濃度の第2の導電型のシンカー拡散領域、及び
基板の表面から低ドーピング密度の第1の導電型の基板の領域へ延長する高ドーピング濃度の第1の導電型の絶縁領域、ここで絶縁領域は集積回路の他の素子から縦型DMOSトランジスタを絶縁する、を含むことを特徴とする請求項10記載の集積回路用の縦型二重拡散金属酸化物半導体(DMOS)トランジスタ。 - 各周本体領域の抵抗を減少するように各周本体領域と連携した高ドーピング濃度の第1の導電型の本体コンタクトを含むことを特徴とする請求項10記載の集積回路用の縦型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- 各周本体領域に基板の表面に隣接して基板に形成された低ドーピング密度の第1の導電型の1つ以上のストップ領域、ここで各周本体領域の縁が連携したストップ領域に終端する、を含むことを特徴とする請求項10記載の集積回路用の縦型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- 基板の表面に配置した第1の誘電体層であって、各ソースとシンカー拡散領域とに隣接する開口を有する第1の誘電体層、
1つ以上のゲートを囲む第2の誘電体層、ここでゲートは連携したソースに隣接して基板の表面上に配置する、
シンカー拡散領域に結合したシンカードレインコンタクト、及び
各ソースと本体に結合したソース‐本体コンタクトを含むことを特徴とする請求項10記載の集積回路用の縦型二重拡散金属酸化物半導体(DMOS)トランジスタ。 - シンカードレインコンタクトとソース‐本体コンタクトは金属で作られることを特徴とする請求項10記載の集積回路用の縦型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- ソースは、基板の表面から狭いバンドギャップ材料の層よりも深く形成されることを特徴とする請求項10記載の集積回路用の縦型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- 表面を有する低ドーピング濃度の第1の導電型の基板、
基板の表面に隣接して基板に形成された高ドーピング濃度の第2の導電型のドレインコンタクト、
基板の表面上に配置されたゲート、
基板の表面に隣接して基板に形成された第1の導電型の本体、
本体に形成された高ドーピング密度の第2の導電型のソース、ここでゲートはソースとドレインコンタクトの中間に配置する、及び
ソースの少なくとも1部分に配置された狭いバンドギャップ材料の層であって、ドレインコンタクトに隣接するチャネル領域の一部から外され、基板のバンドギャップより狭いバンドギャップを有し、ドレイン領域から外れた狭いバンドギャップ材料の層を含むことを特徴とする集積回路用の横型二重拡散金属酸化物半導体(DMOS)トランジスタ。 - 狭いバンドギャップ材料は寄生トランジスタ作用を減少するのに使用することを特徴とする請求項20記載の集積回路用の横型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- 基板の表面に隣接して基板に形成され、ゲート近傍からドレインコンタクトまで延長する第2の導電型のドレイン延長を含むことを特徴とする請求項20記載の集積回路用の横型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- 基板の表面上に配置した第1の誘電体層であって、ソースとドレインコンタクトとに隣接する開口を有する第1の誘電体層、ここで第1の誘電体層の一部はゲートの一部と基板の表面の間に配置する、を含むことを特徴とする請求項20記載の集積回路用の横型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- 狭いバンドギャップ材料の層は選択的エピタキシャル成長によって形成されることを特徴とする請求項20記載の集積回路用の横型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- 狭いバンドギャップ材料の層は注入によって形成されることを特徴とする請求項20記載の集積回路用の横型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- ソースに隣接して基板の表面上に形成した第1のゲート誘電体層、ここで第1のゲート誘電体層の一部はゲートの一部と、
ドレインコンタクトに隣接して基板の表面上に形成した第2のゲート誘電体層との間に配置する、を含むことを特徴とする請求項20記載の集積回路用の横型二重拡散金属酸化物半導体(DMOS)トランジスタ。 - ソースは、基板の表面から狭いバンドギャップ材料の層よりも深く形成されることを特徴とする請求項20記載の集積回路用の横型二重拡散金属酸化物半導体(DMOS)トランジスタ。
- 低ドーピング密度の第1の導電型の基板の表面に隣接して基板に第1の導電型の本体領域を形成し、
本体領域に高ドーピング密度の第2の導電型のソースを形成し、及び、
基板材料のバンドギャップより狭いバンドギャップを有する狭いバンドギャップ材料の層を基板の表面に隣接して形成することを含む、集積回路にMOS素子を形成する方法において、ソースの少なくとも1部分が狭いバンドギャップ材料の層内にあり、チャネル領域の少なくとも一部が狭いバンドギャップ材料の層の上に配置され、狭いバンドギャップ材料の層がドレイン領域から外れていることを特徴とする集積回路にMOS素子を形成する方法。 - 狭いバンドギャップ材料は寄生トランジスタ作用を減少することを特徴とする請求項28記載の集積回路にMOS素子を形成する方法。
- 基板の表面上にゲート誘電体層を形成し、
ゲート誘電体層の表面上にゲート材料の層を堆積し、及び
ゲート材料の層をパターン化してゲートを形成することを含むことを特徴とする請求項28記載の集積回路にMOS素子を形成する方法。 - ソースは、基板の表面から狭いバンドギャップ材料の層よりも深く形成されることを特徴とする請求項28記載の集積回路にMOS素子を形成する方法。
- 狭いバンドギャップ材料の層はエピタキシャル成長によって形成されることを特徴とする請求項28記載の集積回路にMOS素子を形成する方法。
- 狭いバンドギャップ材料の層はSiGeで作られることを特徴とする請求項28記載の集積回路にMOS素子を形成する方法。
- 狭いバンドギャップ材料の層はイオン注入によって形成されることを特徴とする請求項28記載の集積回路にMOS素子を形成する方法。
- Geイオンを注入して狭いバンドギャップ材料の層を形成することを特徴とする請求項35記載の集積回路にMOS素子を形成する方法。
- 基板の表面上にゲートを形成し、及び
傾斜角度注入技術を使用して基板の表面中とゲートの一部の下とにイオンを注入することを含むことを特徴とする請求項35記載の集積回路にMOS素子を形成する方法。
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US09/977,188 | 2001-10-12 | ||
US09/977,188 US6765247B2 (en) | 2001-10-12 | 2001-10-12 | Integrated circuit with a MOS structure having reduced parasitic bipolar transistor action |
PCT/US2002/032121 WO2003034501A2 (en) | 2001-10-12 | 2002-10-08 | Mos devices and corresponding manufacturing methods and circuits |
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EP (1) | EP1436846B1 (ja) |
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2002
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US6765247B2 (en) | 2004-07-20 |
US6902967B2 (en) | 2005-06-07 |
AU2002340128A1 (en) | 2003-04-28 |
ATE518252T1 (de) | 2011-08-15 |
WO2003034501A3 (en) | 2004-03-25 |
WO2003034501A9 (en) | 2004-04-29 |
EP1436846A2 (en) | 2004-07-14 |
EP1436846B1 (en) | 2011-07-27 |
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