ATE518252T1 - Mos-anordnungen und entsprechende herstellungsverfahren und schaltungen - Google Patents
Mos-anordnungen und entsprechende herstellungsverfahren und schaltungenInfo
- Publication number
- ATE518252T1 ATE518252T1 AT02778470T AT02778470T ATE518252T1 AT E518252 T1 ATE518252 T1 AT E518252T1 AT 02778470 T AT02778470 T AT 02778470T AT 02778470 T AT02778470 T AT 02778470T AT E518252 T1 ATE518252 T1 AT E518252T1
- Authority
- AT
- Austria
- Prior art keywords
- band gap
- substrate
- mos
- body region
- layer
- Prior art date
Links
- 210000000746 body region Anatomy 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 4
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/977,188 US6765247B2 (en) | 2001-10-12 | 2001-10-12 | Integrated circuit with a MOS structure having reduced parasitic bipolar transistor action |
PCT/US2002/032121 WO2003034501A2 (en) | 2001-10-12 | 2002-10-08 | Mos devices and corresponding manufacturing methods and circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE518252T1 true ATE518252T1 (de) | 2011-08-15 |
Family
ID=25524916
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02778470T ATE518252T1 (de) | 2001-10-12 | 2002-10-08 | Mos-anordnungen und entsprechende herstellungsverfahren und schaltungen |
Country Status (6)
Country | Link |
---|---|
US (2) | US6765247B2 (de) |
EP (1) | EP1436846B1 (de) |
JP (1) | JP5113317B2 (de) |
AT (1) | ATE518252T1 (de) |
AU (1) | AU2002340128A1 (de) |
WO (1) | WO2003034501A2 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10239861A1 (de) * | 2002-08-29 | 2004-03-18 | Infineon Technologies Ag | Transistoreinrichtung |
JP2004259882A (ja) * | 2003-02-25 | 2004-09-16 | Seiko Epson Corp | 半導体装置及びその製造方法 |
JP3977285B2 (ja) * | 2003-05-15 | 2007-09-19 | キヤノン株式会社 | 固体撮像素子の製造方法 |
SE0302594D0 (sv) * | 2003-09-30 | 2003-09-30 | Infineon Technologies Ag | Vertical DMOS transistor device, integrated circuit, and fabrication method thereof |
US7074659B2 (en) * | 2003-11-13 | 2006-07-11 | Volterra Semiconductor Corporation | Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor |
US7220633B2 (en) | 2003-11-13 | 2007-05-22 | Volterra Semiconductor Corporation | Method of fabricating a lateral double-diffused MOSFET |
US7163856B2 (en) | 2003-11-13 | 2007-01-16 | Volterra Semiconductor Corporation | Method of fabricating a lateral double-diffused mosfet (LDMOS) transistor and a conventional CMOS transistor |
US7038274B2 (en) | 2003-11-13 | 2006-05-02 | Volterra Semiconductor Corporation | Switching regulator with high-side p-type device |
KR100561004B1 (ko) * | 2003-12-30 | 2006-03-16 | 동부아남반도체 주식회사 | 씨모스 이미지 센서 및 그 제조 방법 |
US7421028B2 (en) * | 2004-06-03 | 2008-09-02 | Silicon Laboratories Inc. | Transformer isolator for digital power supply |
US8169108B2 (en) * | 2004-06-03 | 2012-05-01 | Silicon Laboratories Inc. | Capacitive isolator |
US8441325B2 (en) | 2004-06-03 | 2013-05-14 | Silicon Laboratories Inc. | Isolator with complementary configurable memory |
US8049573B2 (en) | 2004-06-03 | 2011-11-01 | Silicon Laboratories Inc. | Bidirectional multiplexed RF isolator |
US7821428B2 (en) | 2004-06-03 | 2010-10-26 | Silicon Laboratories Inc. | MCU with integrated voltage isolator and integrated galvanically isolated asynchronous serial data link |
US7302247B2 (en) | 2004-06-03 | 2007-11-27 | Silicon Laboratories Inc. | Spread spectrum isolator |
US7738568B2 (en) | 2004-06-03 | 2010-06-15 | Silicon Laboratories Inc. | Multiplexed RF isolator |
US7737871B2 (en) | 2004-06-03 | 2010-06-15 | Silicon Laboratories Inc. | MCU with integrated voltage isolator to provide a galvanic isolation between input and output |
US8198951B2 (en) * | 2004-06-03 | 2012-06-12 | Silicon Laboratories Inc. | Capacitive isolation circuitry |
US7447492B2 (en) | 2004-06-03 | 2008-11-04 | Silicon Laboratories Inc. | On chip transformer isolator |
US7902627B2 (en) | 2004-06-03 | 2011-03-08 | Silicon Laboratories Inc. | Capacitive isolation circuitry with improved common mode detector |
US7504691B2 (en) * | 2004-10-07 | 2009-03-17 | Fairchild Semiconductor Corporation | Power trench MOSFETs having SiGe/Si channel structure |
CN101036235B (zh) * | 2004-10-07 | 2012-07-04 | 费查尔德半导体有限公司 | 设计带隙的mos栅功率晶体管 |
US7405443B1 (en) | 2005-01-07 | 2008-07-29 | Volterra Semiconductor Corporation | Dual gate lateral double-diffused MOSFET (LDMOS) transistor |
JP2006228906A (ja) * | 2005-02-16 | 2006-08-31 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
DE102005042827A1 (de) * | 2005-09-09 | 2007-03-22 | Atmel Germany Gmbh | Hochvolt-Feldeffekttransistor und Verfahren zur Herstellung eines Hochvolt-Feldeffekttransistors |
US7564096B2 (en) * | 2007-02-09 | 2009-07-21 | Fairchild Semiconductor Corporation | Scalable power field effect transistor with improved heavy body structure and method of manufacture |
US7960222B1 (en) | 2007-11-21 | 2011-06-14 | National Semiconductor Corporation | System and method for manufacturing double EPI N-type lateral diffusion metal oxide semiconductor transistors |
US7825465B2 (en) | 2007-12-13 | 2010-11-02 | Fairchild Semiconductor Corporation | Structure and method for forming field effect transistor with low resistance channel region |
US20130093015A1 (en) * | 2010-03-01 | 2013-04-18 | X-Fab Semiconductor Foundries Ag | High voltage mos transistor |
JP5662108B2 (ja) | 2010-11-05 | 2015-01-28 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
US8451032B2 (en) | 2010-12-22 | 2013-05-28 | Silicon Laboratories Inc. | Capacitive isolator with schmitt trigger |
US9082741B2 (en) * | 2012-05-18 | 2015-07-14 | Infineon Technologies Ag | Semiconductor device including first and second semiconductor materials |
KR102177257B1 (ko) | 2014-04-15 | 2020-11-10 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR102495452B1 (ko) | 2016-06-29 | 2023-02-02 | 삼성전자주식회사 | 반도체 장치 |
EP3293889B1 (de) | 2016-09-13 | 2019-02-27 | Allegro MicroSystems, LLC | Signalisolator mit bidirektionalem diagnostischem signalaustausch |
US11115244B2 (en) | 2019-09-17 | 2021-09-07 | Allegro Microsystems, Llc | Signal isolator with three state data transmission |
US10879878B1 (en) * | 2019-12-16 | 2020-12-29 | Altec Industries, Inc. | Drop-in solid-state relay |
CN113066867B (zh) * | 2021-03-15 | 2022-09-09 | 无锡新洁能股份有限公司 | 高可靠的碳化硅mosfet器件及其工艺方法 |
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US4564770A (en) * | 1983-03-29 | 1986-01-14 | Rca Corporation | Solid state relay with fast turnoff |
JPS63281468A (ja) * | 1987-05-14 | 1988-11-17 | Oki Electric Ind Co Ltd | 縦型dmos−fet |
US4969852A (en) * | 1989-09-13 | 1990-11-13 | Public Service Company Of Colorado | Channel discriminator circuit for paging stations |
US5138177A (en) * | 1991-03-26 | 1992-08-11 | At&T Bell Laboratories | Solid-state relay |
DE59107127D1 (de) * | 1991-04-11 | 1996-02-01 | Asea Brown Boveri | Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement |
JPH05121738A (ja) * | 1991-10-24 | 1993-05-18 | Fuji Electric Co Ltd | Misfetを有する半導体装置 |
JP3211529B2 (ja) | 1993-12-27 | 2001-09-25 | 日産自動車株式会社 | 縦型misトランジスタ |
US5767546A (en) * | 1994-12-30 | 1998-06-16 | Siliconix Incorporated | Laternal power mosfet having metal strap layer to reduce distributed resistance |
US5777362A (en) | 1995-06-07 | 1998-07-07 | Harris Corporation | High efficiency quasi-vertical DMOS in CMOS or BICMOS process |
EP0747958A2 (de) | 1995-06-07 | 1996-12-11 | STMicroelectronics, Inc. | Vertikal gestapelte geschaltete Emitteranordnungen |
JP3303648B2 (ja) * | 1996-02-07 | 2002-07-22 | 横河電機株式会社 | 半導体リレー |
US5770878A (en) * | 1996-04-10 | 1998-06-23 | Harris Corporation | Trench MOS gate device |
JP3082671B2 (ja) * | 1996-06-26 | 2000-08-28 | 日本電気株式会社 | トランジスタ素子及びその製造方法 |
US5841166A (en) * | 1996-09-10 | 1998-11-24 | Spectrian, Inc. | Lateral DMOS transistor for RF/microwave applications |
US5925910A (en) * | 1997-03-28 | 1999-07-20 | Stmicroelectronics, Inc. | DMOS transistors with schottky diode body structure |
JPH1154748A (ja) * | 1997-08-04 | 1999-02-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6172398B1 (en) * | 1997-08-11 | 2001-01-09 | Magepower Semiconductor Corp. | Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltage |
JP3993927B2 (ja) * | 1997-12-22 | 2007-10-17 | 沖電気工業株式会社 | 静電破壊保護回路 |
JPH11214627A (ja) * | 1998-01-21 | 1999-08-06 | Mitsubishi Electric Corp | Esd保護素子及びその製造方法 |
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DE19835667C2 (de) * | 1998-08-06 | 2002-05-08 | St Microelectronics Gmbh | Gleichspannungswandler |
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JP2001193231A (ja) | 1999-07-22 | 2001-07-17 | Sekisui Chem Co Ltd | 太陽電池モジュールの取付構造 |
CA2385145A1 (en) * | 1999-10-01 | 2001-04-12 | Online Power Supply, Inc. | Non-saturating magnetic element(s) power converters and surge protection |
JP2001196586A (ja) * | 2000-01-12 | 2001-07-19 | Nec Kansai Ltd | パワーmosfet |
US6166520A (en) | 2000-01-25 | 2000-12-26 | Delphi Technologies, Inc. | Intercell bussing system for battery pack |
KR100392166B1 (ko) * | 2000-03-17 | 2003-07-22 | 가부시끼가이샤 도시바 | 반도체 장치의 제조 방법 및 반도체 장치 |
US6369426B2 (en) * | 2000-04-27 | 2002-04-09 | Infineon Technologies North America Corp. | Transistor with integrated photodetector for conductivity modulation |
US6406962B1 (en) * | 2001-01-17 | 2002-06-18 | International Business Machines Corporation | Vertical trench-formed dual-gate FET device structure and method for creation |
-
2001
- 2001-10-12 US US09/977,188 patent/US6765247B2/en not_active Expired - Lifetime
-
2002
- 2002-10-08 JP JP2003537124A patent/JP5113317B2/ja not_active Expired - Fee Related
- 2002-10-08 WO PCT/US2002/032121 patent/WO2003034501A2/en active Application Filing
- 2002-10-08 AT AT02778470T patent/ATE518252T1/de not_active IP Right Cessation
- 2002-10-08 EP EP02778470A patent/EP1436846B1/de not_active Expired - Lifetime
- 2002-10-08 AU AU2002340128A patent/AU2002340128A1/en not_active Abandoned
-
2004
- 2004-03-26 US US10/811,360 patent/US6902967B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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US6902967B2 (en) | 2005-06-07 |
EP1436846B1 (de) | 2011-07-27 |
JP2005507164A (ja) | 2005-03-10 |
AU2002340128A1 (en) | 2003-04-28 |
WO2003034501A3 (en) | 2004-03-25 |
US20030071291A1 (en) | 2003-04-17 |
US6765247B2 (en) | 2004-07-20 |
JP5113317B2 (ja) | 2013-01-09 |
WO2003034501A9 (en) | 2004-04-29 |
EP1436846A2 (de) | 2004-07-14 |
WO2003034501A2 (en) | 2003-04-24 |
US20040180485A1 (en) | 2004-09-16 |
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