JP5112181B2 - 高解像度プラズマ・エッチング - Google Patents
高解像度プラズマ・エッチング Download PDFInfo
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- JP5112181B2 JP5112181B2 JP2008153992A JP2008153992A JP5112181B2 JP 5112181 B2 JP5112181 B2 JP 5112181B2 JP 2008153992 A JP2008153992 A JP 2008153992A JP 2008153992 A JP2008153992 A JP 2008153992A JP 5112181 B2 JP5112181 B2 JP 5112181B2
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- 239000000758 substrate Substances 0.000 claims description 67
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
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- 238000004519 manufacturing process Methods 0.000 description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- -1 gallium ions Chemical class 0.000 description 4
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- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- 229910003472 fullerene Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
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- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
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- 238000005459 micromachining Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- VJGYJQUTDBRHBS-UHFFFAOYSA-N platinum;trifluorophosphane Chemical compound [Pt].FP(F)F.FP(F)F.FP(F)F.FP(F)F VJGYJQUTDBRHBS-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
- B05C21/005—Masking devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/0143—Focussed beam, i.e. laser, ion or e-beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
- H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Description
202 表面
302 ビーム
304 マスク
308 非マスク領域
402、602 プラズマ・ビーム
410 トレンチ
412 側壁
500 デュアルビーム・システム
502 イオン・ビーム・カラム
504 電子ビーム・カラム
506 ガス入口
508、520 開口部
510 ワーク・ピース
512 位置決め可能ステージ
522 ガス出口
530 ビーム・ブランカ
532 ビーム偏向器
534 レンズ
540 ガス注入システム
542 ノズル
Claims (20)
- 基板をエッチングして微視的構造を形成する方法であって、
集束ビームが前駆ガスを分解することによりビームの衝突地点近傍にマスク材料を堆積するか、または、前記ビームの前記衝突地点近傍の前記マスク材料をエッチングすることによって前記マスク材料の既存の層をパターン化する集束ビーム法を用いて、前記基板の表面の1つまたは複数の部分上に保護マスクを形成することと、
前記基板と接触したときに非マスク部分を化学的にエッチングすることができるエネルギーを有するが、前記非マスク部分をスパッタリングすることができるエネルギーよりも低いエネルギーを有するイオン化粒子ビームを、プラズマ源からイオン光学カラムを通してサンプルの方に誘導して前記基板の非マスク部分を選択的にエッチングすることにより前記基板に前記微視的構造を形成することと、
第2のイオン化粒子ビームを誘導して、基板材料よりも前記マスク材料をより迅速に選択的にエッチングすることにより前記マスク材料を除去することとを含む、方法。 - イオン化粒子ビームをプラズマ源からイオン光学カラムを通して前記サンプルの方に誘導して前記基板の非マスク部分を選択的にエッチングすることにより前記基板に前記微視的構造を形成することが、前記マスク材料の少なくとも一部を残したままで、イオン化粒子ビームを誘導して前記微視的構造を形成することを含む、請求項1に記載の方法。
- 基板をエッチングして微視的構造を形成する方法であって、
前記基板の非マスク領域を残す保護マスクを前記基板の表面の1つまたは複数の部分上に形成することと、
プラズマ・チャンバ内でイオン化粒子を発生させることと、
前記イオン化粒子を、前記プラズマ・チャンバからビーム内に形成することと、
イオン化粒子ビームを前記プラズマ・チャンバからイオン光学カラムを通して前記基板の方に誘導して前記基板の非マスク領域を選択的にエッチングすることであり、前記イオン光学カラムは、前記ビームを形成するイオン光学素子を含み、前記イオン化粒子は化学反応を誘起して、前記非マスク領域から基板材料を選択的に除去することができるエネルギーを有し、スパッタリングによる前記基板材料の除去が前記化学反応による前記基板材料の除去よりも小さいように前記イオン化粒子のエネルギーを調整することと、
前記基板材料よりもマスク材料をより迅速に選択的に除去する第2のビームを前記基板の方に誘導することとを含む、方法。 - 前記イオン化粒子ビームを前記プラズマ・チャンバから前記基板の方に誘導することが、前記プラズマ・チャンバから前記イオン化粒子ビームとともに出てくる中性粒子が前記基板に到達する前に前記イオン光学カラムにおいて前記中性粒子を除去することを含む、請求項3に記載の方法。
- 前記イオン化粒子ビームを誘導することが、前記マスク領域よりも小さい前記イオン化粒子ビームを誘導することを含む、請求項3または4に記載の方法。
- 前記イオン化粒子ビームが、前記基板の前記非マスク領域と接触したときに前記イオン化粒子ビームの前記イオン化粒子を解離させることができるエネルギーを有する、請求項3〜5のいずれかに記載の方法。
- 前記イオン化粒子ビームが10eVから500eVの範囲のエネルギーを有する、請求項3〜6のいずれかに記載の方法。
- 前記イオン化粒子ビームがコリメートされる、請求項3〜7のいずれかに記載の方法。
- 前記イオン化粒子ビームが収束性である、請求項3〜8のいずれかに記載の方法。
- 前記イオン化粒子ビームが前記基板の前記非マスク領域にわたって一定のイオン・フラックスを有する、請求項3〜9のいずれかに記載の方法。
- 前記イオン光学カラムは、差動ポンプを用いて複数の開口部から排気が行われる、請求項3〜10のいずれかに記載の方法。
- 化学的エッチング、物理的スパッタリング、または化学的エッチングと物理的スパッタリングとの組合せを用いて、前記第2のビームによって前記マスク材料および前記基板材料の両方を除去する、請求項3〜11のいずれかに記載の方法。
- 前記基板の表面の1つまたは複数の部分上に前記保護マスクを形成することが、ガスを1つまたは複数の部分の方に誘導しながら荷電粒子ビームを前記1つまたは複数の部分の方に誘導することであって、前記荷電粒子ビームは前記ガスを分解して保護層を堆積させることを含む、請求項3〜12のいずれかに記載の方法。
- 荷電粒子ビームを前記1つまたは複数の部分の方に誘導することが、電子ビームを誘導することを含む、請求項13に記載の方法。
- 荷電粒子ビームを前記1つまたは複数の部分の方に誘導することが、イオン・ビームを誘導することを含む、請求項13に記載の方法。
- 荷電粒子ビームを前記1つまたは複数の部分の方に誘導することが、レーザ・ビームを誘導することを含む、請求項13に記載の方法。
- プラズマ・チャンバ内でイオン化粒子を発生させることが、磁気強化型誘導結合プラズマ・イオン源において複数のイオンを発生させることを含む、請求項3〜13のいずれかに記載の方法。
- 前記基板の表面の1つまたは複数の部分上に保護マスクを形成することが、前記基板の表面上に前記マスク材料を塗布することと、続いて、集束ビーム法を用いて、前記1つまたは複数の部分以外の表面領域から前記マスク材料を除去することとを含む、請求項3〜12のいずれかに記載の方法。
- 基板をエッチングして微視的構造を形成する装置であって、
ガス注入システムと、
ビームの衝突地点近傍の前記基板の方にガスを誘導してマスク材料をあるパターンで前記基板の表面上に堆積させるようにプログラムされた、微細ビームを発生させるビーム発生カラムを含む第1のシステムと、
プラズマ・チャンバと、前記プラズマ・チャンバからのイオンをビームに集束またはコリメートすることによりイオン・ビームを形成する1つまたは複数のレンズを有する、前記プラズマ・チャンバから前記イオンを受け取るイオン・カラムとを含む第2のシステムと、
前記基板の表面との化学反応を誘起して前記基板の表面を除去することができるエネルギーを前記イオンに与えるためにある電圧に維持された、1つまたは複数の加速電極と、
を備え、前記イオンの前記エネルギーは、スパッタリングによる前記基板の表面の除去が前記化学反応による前記基板の表面の除去よりも小さいように調整されている、装置。 - 前記第1のシステムが電子ビーム・システム、集束イオン・ビーム・システム、またはレーザ・システムを含む、請求項19に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/766,680 | 2007-06-21 | ||
US11/766,680 US8303833B2 (en) | 2007-06-21 | 2007-06-21 | High resolution plasma etch |
Publications (3)
Publication Number | Publication Date |
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JP2009004778A JP2009004778A (ja) | 2009-01-08 |
JP2009004778A5 JP2009004778A5 (ja) | 2011-07-21 |
JP5112181B2 true JP5112181B2 (ja) | 2013-01-09 |
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JP2008153992A Active JP5112181B2 (ja) | 2007-06-21 | 2008-06-12 | 高解像度プラズマ・エッチング |
Country Status (3)
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---|---|
US (2) | US8303833B2 (ja) |
EP (1) | EP2006249A3 (ja) |
JP (1) | JP5112181B2 (ja) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1501115B1 (en) | 2003-07-14 | 2009-07-01 | FEI Company | Dual beam system |
US20110163068A1 (en) * | 2008-01-09 | 2011-07-07 | Mark Utlaut | Multibeam System |
US8168961B2 (en) * | 2008-11-26 | 2012-05-01 | Fei Company | Charged particle beam masking for laser ablation micromachining |
US8778804B2 (en) * | 2009-01-30 | 2014-07-15 | Fei Company | High selectivity, low damage electron-beam delineation etch |
EP2226830B1 (en) * | 2009-03-06 | 2014-01-08 | FEI Company | Charged particle beam processing |
EP2233907A1 (en) * | 2009-03-27 | 2010-09-29 | FEI Company | Forming an image while milling a work piece |
JP5702552B2 (ja) | 2009-05-28 | 2015-04-15 | エフ イー アイ カンパニFei Company | デュアルビームシステムの制御方法 |
JP5645335B2 (ja) * | 2009-08-28 | 2014-12-24 | エフ・イ−・アイ・カンパニー | Fibパターニングを改良するためのパターン変更方式 |
US8617668B2 (en) * | 2009-09-23 | 2013-12-31 | Fei Company | Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition |
US8253118B2 (en) | 2009-10-14 | 2012-08-28 | Fei Company | Charged particle beam system having multiple user-selectable operating modes |
EP2341525B1 (en) | 2009-12-30 | 2013-10-23 | FEI Company | Plasma source for charged particle beam system |
US8987678B2 (en) | 2009-12-30 | 2015-03-24 | Fei Company | Encapsulation of electrodes in solid media |
US8642974B2 (en) | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
CN102812533B (zh) | 2010-04-07 | 2015-12-02 | Fei公司 | 组合激光器和带电粒子束*** |
EP2492950B1 (en) | 2011-02-25 | 2018-04-11 | FEI Company | Method for rapid switching between a high current mode and a low current mode in a charged particle beam system |
US9721754B2 (en) * | 2011-04-26 | 2017-08-01 | Carl Zeiss Smt Gmbh | Method and apparatus for processing a substrate with a focused particle beam |
US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
US9443697B2 (en) * | 2012-01-31 | 2016-09-13 | Fei Company | Low energy ion beam etch |
WO2014022429A1 (en) * | 2012-07-30 | 2014-02-06 | Fei Company | Environmental sem gas injection system |
US9655223B2 (en) * | 2012-09-14 | 2017-05-16 | Oregon Physics, Llc | RF system, magnetic filter, and high voltage isolation for an inductively coupled plasma ion source |
WO2014055876A1 (en) * | 2012-10-05 | 2014-04-10 | Fei Company | High aspect ratio structure analysis |
WO2014078800A1 (en) * | 2012-11-16 | 2014-05-22 | Dmitri Litvinov | System and method for selectively removing atoms |
US10103008B2 (en) | 2016-01-12 | 2018-10-16 | Fei Company | Charged particle beam-induced etching |
DE102016203094B4 (de) | 2016-02-26 | 2022-02-10 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum dauerhaften Reparieren von Defekten fehlenden Materials einer photolithographischen Maske |
US10549386B2 (en) * | 2016-02-29 | 2020-02-04 | Xerox Corporation | Method for ablating openings in unsupported layers |
EP3285278A1 (en) * | 2016-08-16 | 2018-02-21 | FEI Company | Magnet used with a plasma cleaner |
US10684407B2 (en) * | 2017-10-30 | 2020-06-16 | Facebook Technologies, Llc | Reactivity enhancement in ion beam etcher |
TW202239270A (zh) * | 2017-10-30 | 2022-10-01 | 美商元平台技術有限公司 | 利用化學輔助反應離子束蝕刻製造傾斜表面浮雕結構的方法 |
US10914954B2 (en) | 2018-08-03 | 2021-02-09 | Facebook Technologies, Llc | Rainbow reduction for waveguide displays |
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US10761330B2 (en) | 2018-01-23 | 2020-09-01 | Facebook Technologies, Llc | Rainbow reduction in waveguide displays |
US10649119B2 (en) | 2018-07-16 | 2020-05-12 | Facebook Technologies, Llc | Duty cycle, depth, and surface energy control in nano fabrication |
US11137536B2 (en) | 2018-07-26 | 2021-10-05 | Facebook Technologies, Llc | Bragg-like gratings on high refractive index material |
US11150394B2 (en) | 2019-01-31 | 2021-10-19 | Facebook Technologies, Llc | Duty cycle range increase for waveguide combiners |
US11391950B2 (en) | 2019-06-26 | 2022-07-19 | Meta Platforms Technologies, Llc | Techniques for controlling effective refractive index of gratings |
CN110921613B (zh) * | 2019-11-21 | 2023-06-27 | 武汉大学 | 电磁场控制等离子体的激光掩膜刻蚀方法以及*** |
US11226446B2 (en) | 2020-05-06 | 2022-01-18 | Facebook Technologies, Llc | Hydrogen/nitrogen doping and chemically assisted etching of high refractive index gratings |
CN112591707B (zh) * | 2020-12-15 | 2024-05-31 | 南方科技大学 | 一种纳米锥形阵列结构及其制备方法 |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59104287A (ja) | 1982-12-07 | 1984-06-16 | Sumitomo Electric Ind Ltd | レ−ザ加工法 |
JPS59132132A (ja) | 1983-01-17 | 1984-07-30 | Mitsubishi Electric Corp | 微細パタ−ンの形成方法 |
JPS59168652A (ja) * | 1983-03-16 | 1984-09-22 | Hitachi Ltd | 素子修正方法及びその装置 |
US4859908A (en) * | 1986-09-24 | 1989-08-22 | Matsushita Electric Industrial Co., Ltd. | Plasma processing apparatus for large area ion irradiation |
US4737637A (en) * | 1986-10-15 | 1988-04-12 | Hughes Aircraft Company | Mass separator for ionized cluster beam |
US4740267A (en) * | 1987-02-20 | 1988-04-26 | Hughes Aircraft Company | Energy intensive surface reactions using a cluster beam |
US4856457A (en) * | 1987-02-20 | 1989-08-15 | Hughes Aircraft Company | Cluster source for nonvolatile species, having independent temperature control |
US4833319A (en) * | 1987-02-27 | 1989-05-23 | Hughes Aircraft Company | Carrier gas cluster source for thermally conditioned clusters |
US5221422A (en) * | 1988-06-06 | 1993-06-22 | Digital Equipment Corporation | Lithographic technique using laser scanning for fabrication of electronic components and the like |
JPH0262039A (ja) | 1988-08-29 | 1990-03-01 | Hitachi Ltd | 多層素子の微細加工方法およびその装置 |
US4874459A (en) * | 1988-10-17 | 1989-10-17 | The Regents Of The University Of California | Low damage-producing, anisotropic, chemically enhanced etching method and apparatus |
DE4018954A1 (de) | 1989-06-15 | 1991-01-03 | Mitsubishi Electric Corp | Trockenaetzgeraet |
JPH04272640A (ja) | 1991-02-26 | 1992-09-29 | Shimadzu Corp | 集束イオンビームエッチング装置 |
US5188705A (en) | 1991-04-15 | 1993-02-23 | Fei Company | Method of semiconductor device manufacture |
JP2694625B2 (ja) | 1991-07-05 | 1997-12-24 | 光技術研究開発株式会社 | 化合物半導体基体のエッチング方法および製造方法 |
DE4200235C1 (ja) | 1992-01-08 | 1993-05-06 | Hoffmeister, Helmut, Dr., 4400 Muenster, De | |
JPH05315212A (ja) * | 1992-05-12 | 1993-11-26 | Jeol Ltd | 集束イオンビーム装置 |
US5350480A (en) | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
US5482802A (en) * | 1993-11-24 | 1996-01-09 | At&T Corp. | Material removal with focused particle beams |
AU2914095A (en) | 1994-06-28 | 1996-01-25 | Fei Company | Charged particle deposition of electrically insulating films |
JP3464320B2 (ja) | 1995-08-02 | 2003-11-10 | 株式会社荏原製作所 | 高速原子線を用いた加工方法及び加工装置 |
US5573595A (en) * | 1995-09-29 | 1996-11-12 | Lam Research Corporation | Methods and apparatus for generating plasma |
US6017221A (en) * | 1995-12-04 | 2000-01-25 | Flamm; Daniel L. | Process depending on plasma discharges sustained by inductive coupling |
US5686796A (en) * | 1995-12-20 | 1997-11-11 | International Business Machines Corporation | Ion implantation helicon plasma source with magnetic dipoles |
JP2788436B2 (ja) | 1996-01-16 | 1998-08-20 | 技術研究組合新情報処理開発機構 | イオンビームエッチング装置 |
TW403959B (en) * | 1996-11-27 | 2000-09-01 | Hitachi Ltd | Plasma treatment device |
US6042738A (en) * | 1997-04-16 | 2000-03-28 | Micrion Corporation | Pattern film repair using a focused particle beam system |
GB9714142D0 (en) * | 1997-07-05 | 1997-09-10 | Surface Tech Sys Ltd | An arrangement for the feeding of RF power to one or more antennae |
JPH11154479A (ja) * | 1997-11-20 | 1999-06-08 | Hitachi Ltd | 2次電子画像検出方法及びその装置並びに集束荷電粒子ビームによる処理方法及びその装置 |
EP0989595A3 (en) | 1998-09-18 | 2001-09-19 | Ims-Ionen Mikrofabrikations Systeme Gmbh | Device for processing a surface of a substrate |
US6268608B1 (en) * | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
US20010025826A1 (en) * | 2000-02-28 | 2001-10-04 | Pierson Thomas E. | Dense-plasma etching of InP-based materials using chlorine and nitrogen |
JP4364420B2 (ja) * | 2000-10-31 | 2009-11-18 | エスアイアイ・ナノテクノロジー株式会社 | 垂直エッジのサブミクロン貫通孔を形成する方法 |
US6977386B2 (en) * | 2001-01-19 | 2005-12-20 | Fei Company | Angular aperture shaped beam system and method |
US6838380B2 (en) * | 2001-01-26 | 2005-01-04 | Fei Company | Fabrication of high resistivity structures using focused ion beams |
KR100444189B1 (ko) * | 2001-03-19 | 2004-08-18 | 주성엔지니어링(주) | 유도결합 플라즈마 소스의 임피던스 정합 회로 |
US6730237B2 (en) * | 2001-06-22 | 2004-05-04 | International Business Machines Corporation | Focused ion beam process for removal of copper |
US6753538B2 (en) * | 2001-07-27 | 2004-06-22 | Fei Company | Electron beam processing |
US6768120B2 (en) * | 2001-08-31 | 2004-07-27 | The Regents Of The University Of California | Focused electron and ion beam systems |
JP2005174591A (ja) | 2003-12-08 | 2005-06-30 | Horon:Kk | 荷電粒子線装置および荷電粒子線像生成方法 |
US7241361B2 (en) * | 2004-02-20 | 2007-07-10 | Fei Company | Magnetically enhanced, inductively coupled plasma source for a focused ion beam system |
JP2006005110A (ja) | 2004-06-17 | 2006-01-05 | National Institute For Materials Science | 微細構造の作製方法及び作製装置 |
EP1630849B1 (en) * | 2004-08-27 | 2011-11-02 | Fei Company | Localized plasma processing |
JP5033314B2 (ja) * | 2004-09-29 | 2012-09-26 | 株式会社日立ハイテクノロジーズ | イオンビーム加工装置及び加工方法 |
US7670956B2 (en) * | 2005-04-08 | 2010-03-02 | Fei Company | Beam-induced etching |
JP5020483B2 (ja) | 2005-07-08 | 2012-09-05 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
EP2041756B1 (en) | 2006-07-14 | 2015-05-13 | FEI Company | A multi-source plasma focused ion beam system |
US8835880B2 (en) * | 2006-10-31 | 2014-09-16 | Fei Company | Charged particle-beam processing using a cluster source |
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- 2007-06-21 US US11/766,680 patent/US8303833B2/en active Active
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- 2008-06-12 JP JP2008153992A patent/JP5112181B2/ja active Active
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EP2006249A2 (en) | 2008-12-24 |
US20080314871A1 (en) | 2008-12-25 |
JP2009004778A (ja) | 2009-01-08 |
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