JP5106817B2 - 信頼性を向上させることができるフラッシュメモリ装置 - Google Patents
信頼性を向上させることができるフラッシュメモリ装置 Download PDFInfo
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- JP5106817B2 JP5106817B2 JP2006284077A JP2006284077A JP5106817B2 JP 5106817 B2 JP5106817 B2 JP 5106817B2 JP 2006284077 A JP2006284077 A JP 2006284077A JP 2006284077 A JP2006284077 A JP 2006284077A JP 5106817 B2 JP5106817 B2 JP 5106817B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Description
110 行デコーダ回路
120 読み出し/書き込み回路
130 レジスタ
140 検出回路
150 制御ロジック部
151 プログラム制御ユニット
151a データプログラム制御器
151b コードプログラム制御器
152 読み出し制御ユニット
152a データ読み出し制御器
152b コード読み出し制御器
160 電圧発生回路
Claims (9)
- 各々が行列状に配列されたメモリセルを含む第1領域及び第2領域を有するメモリセルアレイと、
前記第2領域を定義するためのアドレス情報を貯蔵するアドレス貯蔵回路と、
外部アドレスに応答して前記第1領域と前記第2領域とのうちのいずれか一つを選択する行デコーダ回路と、
読み出し動作の時に、前記行デコーダ回路によって選択された領域の行に供給される読み出し電圧を発生する電圧発生回路と、
前記アドレス貯蔵回路に貯蔵されたアドレス情報及び外部アドレス情報に基づいて、前記行デコーダ回路により選択された領域が前記第2領域に属するか否かを検出する検出回路と、
前記読み出し動作の時に、前記検出回路の出力に応答して前記電圧発生回路を制御する制御ロジック部とを含み、
前記制御ロジック部は、前記第2領域の行に供給される読み出し電圧が前記第1領域の行に供給される読み出し電圧より高く生成されるように前記電圧発生回路を制御し、
前記読み出し電圧が供給される行は、前記読み出し動作の時に選択された行であり、
前記第1領域は、データ貯蔵領域であり、
前記第2領域は、コード貯蔵領域であり、
前記第1及び第2領域の各々は、少なくとも一つのメモリブロックを含み、
前記メモリブロックは、前記列に対応するセルストリングを有し、
前記第2領域の読み出しパス電圧は、前記第1領域の読み出しパス電圧より低く、かつ、前記第2領域の読み出し電圧は、前記第1領域の読み出し電圧より高い
ことを特徴とするフラッシュメモリ装置。 - 前記制御ロジック部は、プログラム動作の時に、前記第2領域の行に供給されるプログラム電圧の増加分が前記第1領域の行に供給されるプログラム電圧の増加分より低く設定されるように前記電圧発生回路を制御する
ことを特徴とする請求項1に記載のフラッシュメモリ装置。 - 前記制御ロジック部は、前記プログラム動作の時に、前記第2領域の行に供給されるプログラム電圧の開始プログラム電圧が前記第1領域の行に供給されるプログラム電圧の開始プログラム電圧より高く設定されるように前記電圧発生回路を制御する
ことを特徴とする請求項2に記載のフラッシュメモリ装置。 - 前記制御ロジック部は、プログラム動作の時に、前記第2領域の行に供給される検証電圧が前記第1領域の行に供給される検証電圧より高く設定されるように前記電圧発生回路を制御する
ことを特徴とする請求項1に記載のフラッシュメモリ装置。 - 前記制御ロジック部は、
プログラム動作の時に前記検出回路の出力に応答して前記電圧発生回路を制御するプログラム制御ユニットと、
前記読み出し動作の時に前記検出回路の出力に応答して前記電圧発生回路を制御する読み出し制御ユニットとを含む
ことを特徴とする請求項1に記載のフラッシュメモリ装置。 - 前記プログラム制御ユニットは、
前記第1領域が選択される時に前記電圧発生回路を制御するデータプログラム制御器と、
前記第2領域が選択される時に前記電圧発生回路を制御するコードプログラム制御器とを含む
ことを特徴とする請求項5に記載のフラッシュメモリ装置。 - 前記読み出し制御ユニットは、
前記第1領域が選択される時に前記電圧発生回路を制御するデータ読み出し制御器と、
前記第2領域が選択される時に前記電圧発生回路を制御するコード読み出し制御器とを含む
ことを特徴とする請求項5に記載のフラッシュメモリ装置。 - 前記第2領域を定義するためのアドレス情報は、パワーアップ時に、外部によって前記アドレス貯蔵回路に貯蔵される
ことを特徴とする請求項1に記載のフラッシュメモリ装置。 - 前記第2領域を定義するためのアドレス情報は、ウェーハレベルで前記アドレス貯蔵回路にプログラムされる
ことを特徴とする請求項1に記載のフラッシュメモリ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0100815 | 2005-10-25 | ||
KR1020050100815A KR100660544B1 (ko) | 2005-10-25 | 2005-10-25 | 신뢰성을 향상시킬 수 있는 플래시 메모리 장치 |
Publications (2)
Publication Number | Publication Date |
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JP2007122855A JP2007122855A (ja) | 2007-05-17 |
JP5106817B2 true JP5106817B2 (ja) | 2012-12-26 |
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JP2006284077A Active JP5106817B2 (ja) | 2005-10-25 | 2006-10-18 | 信頼性を向上させることができるフラッシュメモリ装置 |
Country Status (3)
Country | Link |
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US (1) | US7558114B2 (ja) |
JP (1) | JP5106817B2 (ja) |
KR (1) | KR100660544B1 (ja) |
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2005
- 2005-10-25 KR KR1020050100815A patent/KR100660544B1/ko active IP Right Grant
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2006
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US7558114B2 (en) | 2009-07-07 |
US20070091694A1 (en) | 2007-04-26 |
KR100660544B1 (ko) | 2006-12-22 |
JP2007122855A (ja) | 2007-05-17 |
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