IT1303204B1 - Metodo di programmazione di celle di memoria non volatile ad elevataprecisione, con velocita' di programmazione ottimizzata. - Google Patents
Metodo di programmazione di celle di memoria non volatile ad elevataprecisione, con velocita' di programmazione ottimizzata.Info
- Publication number
- IT1303204B1 IT1303204B1 IT1998TO001003A ITTO981003A IT1303204B1 IT 1303204 B1 IT1303204 B1 IT 1303204B1 IT 1998TO001003 A IT1998TO001003 A IT 1998TO001003A IT TO981003 A ITTO981003 A IT TO981003A IT 1303204 B1 IT1303204 B1 IT 1303204B1
- Authority
- IT
- Italy
- Prior art keywords
- memory cells
- volatile memory
- programming
- optimized
- precision non
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1998TO001003A IT1303204B1 (it) | 1998-11-27 | 1998-11-27 | Metodo di programmazione di celle di memoria non volatile ad elevataprecisione, con velocita' di programmazione ottimizzata. |
US09/449,168 US6392931B1 (en) | 1998-11-27 | 1999-11-24 | Method for high precision programming nonvolatile memory cells, with optimized programming speed |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1998TO001003A IT1303204B1 (it) | 1998-11-27 | 1998-11-27 | Metodo di programmazione di celle di memoria non volatile ad elevataprecisione, con velocita' di programmazione ottimizzata. |
Publications (3)
Publication Number | Publication Date |
---|---|
ITTO981003A0 ITTO981003A0 (it) | 1998-11-27 |
ITTO981003A1 ITTO981003A1 (it) | 2000-05-27 |
IT1303204B1 true IT1303204B1 (it) | 2000-10-30 |
Family
ID=11417213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT1998TO001003A IT1303204B1 (it) | 1998-11-27 | 1998-11-27 | Metodo di programmazione di celle di memoria non volatile ad elevataprecisione, con velocita' di programmazione ottimizzata. |
Country Status (2)
Country | Link |
---|---|
US (1) | US6392931B1 (it) |
IT (1) | IT1303204B1 (it) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6738289B2 (en) * | 2001-02-26 | 2004-05-18 | Sandisk Corporation | Non-volatile memory with improved programming and method therefor |
DE60139670D1 (de) * | 2001-04-10 | 2009-10-08 | St Microelectronics Srl | Verfahren zur Programmierung nichtflüchtiger Speicherzellen mit Programmier- und Prüfalgorithmus unter Verwendung treppenförmiger Spannungsimpulse mit variablem Stufenabstand |
JP3987715B2 (ja) * | 2001-12-06 | 2007-10-10 | 富士通株式会社 | 不揮発性半導体メモリおよび不揮発性半導体メモリのプログラム電圧制御方法 |
US7211843B2 (en) * | 2002-04-04 | 2007-05-01 | Broadcom Corporation | System and method for programming a memory cell |
FR2842344A1 (fr) * | 2002-07-11 | 2004-01-16 | St Microelectronics Sa | Procede de commande d'une memoire electronique non volatile et dispositif associe |
US7139198B2 (en) * | 2004-01-27 | 2006-11-21 | Sandisk Corporation | Efficient verification for coarse/fine programming of non-volatile memory |
KR100632944B1 (ko) * | 2004-05-31 | 2006-10-12 | 삼성전자주식회사 | 동작 모드에 따라 프로그램 전압의 증가분을 가변할 수있는 불 휘발성 메모리 장치 |
ITTO20040470A1 (it) * | 2004-07-08 | 2004-10-08 | St Microelectronics Srl | Circuito di lettura/verifica di celle di memoria multilivello con tensione di lettura a rampa e relativo metodo di lettura/verifica. |
US8823969B1 (en) * | 2004-10-18 | 2014-09-02 | Kla-Tencor Corporation | Image processing architecture |
KR100748553B1 (ko) * | 2004-12-20 | 2007-08-10 | 삼성전자주식회사 | 리플-프리 고전압 발생회로 및 방법, 그리고 이를 구비한반도체 메모리 장치 |
US7339834B2 (en) * | 2005-06-03 | 2008-03-04 | Sandisk Corporation | Starting program voltage shift with cycling of non-volatile memory |
US7656710B1 (en) | 2005-07-14 | 2010-02-02 | Sau Ching Wong | Adaptive operations for nonvolatile memories |
KR100705220B1 (ko) * | 2005-09-15 | 2007-04-06 | 주식회사 하이닉스반도체 | 프로그램 속도를 증가시키기 위한 플래시 메모리 장치의소거 및 프로그램 방법 |
KR100660544B1 (ko) * | 2005-10-25 | 2006-12-22 | 삼성전자주식회사 | 신뢰성을 향상시킬 수 있는 플래시 메모리 장치 |
US7512008B2 (en) | 2005-11-30 | 2009-03-31 | Atmel Corporation | Circuit to control voltage ramp rate |
US7327608B2 (en) * | 2006-03-28 | 2008-02-05 | Sandisk Corporation | Program time adjustment as function of program voltage for improved programming speed in programming method |
US7330373B2 (en) * | 2006-03-28 | 2008-02-12 | Sandisk Corporation | Program time adjustment as function of program voltage for improved programming speed in memory system |
US7961511B2 (en) * | 2006-09-26 | 2011-06-14 | Sandisk Corporation | Hybrid programming methods and systems for non-volatile memory storage elements |
KR100830575B1 (ko) * | 2006-09-26 | 2008-05-21 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 멀티-블록 소거 방법 |
KR100780773B1 (ko) * | 2006-11-03 | 2007-11-30 | 주식회사 하이닉스반도체 | 플래시 메모리소자의 프로그램 시작 바이어스 설정방법 및이를 이용한 프로그램 방법 |
KR100868105B1 (ko) * | 2006-12-13 | 2008-11-11 | 삼성전자주식회사 | 저항 메모리 장치 |
US7599224B2 (en) * | 2007-07-03 | 2009-10-06 | Sandisk Corporation | Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
US7508715B2 (en) * | 2007-07-03 | 2009-03-24 | Sandisk Corporation | Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
US7800951B2 (en) * | 2007-08-20 | 2010-09-21 | Marvell World Trade Ltd. | Threshold voltage digitizer for array of programmable threshold transistors |
US7948802B2 (en) | 2007-12-04 | 2011-05-24 | Micron Technology, Inc. | Sensing memory cells |
US7715235B2 (en) * | 2008-08-25 | 2010-05-11 | Sandisk Corporation | Non-volatile memory and method for ramp-down programming |
US8223551B2 (en) * | 2009-02-19 | 2012-07-17 | Micron Technology, Inc. | Soft landing for desired program threshold voltage |
US8917553B2 (en) | 2011-03-25 | 2014-12-23 | Micron Technology, Inc. | Non-volatile memory programming |
KR20130091909A (ko) * | 2012-02-09 | 2013-08-20 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 프로그램 방법과 이를 이용하는 데이터 처리 시스템 |
US9082510B2 (en) * | 2012-09-14 | 2015-07-14 | Freescale Semiconductor, Inc. | Non-volatile memory (NVM) with adaptive write operations |
US9911492B2 (en) | 2014-01-17 | 2018-03-06 | International Business Machines Corporation | Writing multiple levels in a phase change memory using a write reference voltage that incrementally ramps over a write period |
US9378822B2 (en) * | 2014-05-17 | 2016-06-28 | Elite Semiconductor Memory Technology Inc. | Method for programming selected memory cells in nonvolatile memory device and nonvolatile memory device thereof |
US9384842B1 (en) | 2015-05-20 | 2016-07-05 | Freescale Semiconductor, Inc. | Method and system to improve soft-programming time in non-volatile memory |
KR102671402B1 (ko) | 2019-04-16 | 2024-05-31 | 삼성전자주식회사 | 문턱전압 산포 특성을 향상한 메모리 컨트롤러, 메모리 시스템 및 그 동작방법 |
US11315649B2 (en) | 2019-04-16 | 2022-04-26 | Samsung Electronics Co., Ltd. | Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methods |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3591824A (en) * | 1969-03-05 | 1971-07-06 | Madatron Inc | Driving means for crt{3 s |
FR2768274B1 (fr) * | 1997-09-10 | 1999-11-05 | Sgs Thomson Microelectronics | Circuit de generation d'une haute tension de programmation ou d'effacement d'une memoire |
FR2768846B1 (fr) * | 1997-09-19 | 1999-12-24 | Sgs Thomson Microelectronics | Procede et circuit de generation de la tension de programmation et d'effacement dans une memoire non volatile |
EP0908895A1 (en) * | 1997-10-09 | 1999-04-14 | STMicroelectronics S.r.l. | Controlled hot-electron writing method for non-volatile memory cells |
DE69723700D1 (de) * | 1997-11-03 | 2003-08-28 | St Microelectronics Srl | Verfahren zur Programmierung eines nichtflüchtigen Mehrpegelspeichers und nichtflüchtiger Mehrpegelspeicher |
-
1998
- 1998-11-27 IT IT1998TO001003A patent/IT1303204B1/it active IP Right Grant
-
1999
- 1999-11-24 US US09/449,168 patent/US6392931B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6392931B1 (en) | 2002-05-21 |
ITTO981003A1 (it) | 2000-05-27 |
ITTO981003A0 (it) | 1998-11-27 |
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Legal Events
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0001 | Granted |