JP5091128B2 - マイクロリソグラフィ用の投影レンズおよびそのための端部素子 - Google Patents
マイクロリソグラフィ用の投影レンズおよびそのための端部素子 Download PDFInfo
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- JP5091128B2 JP5091128B2 JP2008517327A JP2008517327A JP5091128B2 JP 5091128 B2 JP5091128 B2 JP 5091128B2 JP 2008517327 A JP2008517327 A JP 2008517327A JP 2008517327 A JP2008517327 A JP 2008517327A JP 5091128 B2 JP5091128 B2 JP 5091128B2
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- projection lens
- quartz glass
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- ppm
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Glass Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Glass Melting And Manufacturing (AREA)
Description
Claims (8)
- 石英ガラスから作製された少なくとも1つの光学素子(14)を備え、190nmを超える動作波長用に設計された、マイクロリソグラフィ用の投影レンズ(5)であって、
前記石英ガラスが、5ppm未満のOH含有率、1.5×1016と2×1018分子/cm3との間の水素含有量、及び50ppm未満のフッ素含有率を有し、前記石英ガラスは、前記動作波長で照射されるパルスシーケンスのエネルギー密度Hに依存する、該パルスシーケンスの照射による前記石英ガラスの吸収係数の飽和値ksatの変化dksat/dHが、1×10−4cm/mJ未満となるように、室温と500°Cとの間の温度で、水素がコールドチャージされることを特徴とする投影レンズ。 - 前記投影レンズ(5)が前記動作波長で動作中、前記光学素子(14)は、少なくとも一部の領域が、200μJ/cm2と1000μJ/cm2との間のパルスエネルギー密度に曝される用途に用いられる、請求項1に記載の投影レンズ。
- 前記光学素子(14)は、前記投影レンズ(5)の焦点平面の近傍に配置される用途に用いられる、請求項1または2に記載の投影レンズ。
- 前記光学素子は前記投影レンズ(5)の端部素子(14)である、請求項1乃至3のいずれか1に記載の投影レンズ。
- 前記投影レンズ(5)は、入射する放射の偏光度を、80%を超えて維持する、請求項1乃至4のいずれか1項に記載の投影レンズ。
- 請求項1乃至5のいずれか1項に記載の投影レンズ(5)用の、石英ガラスから作製された端部素子(14)であって、前記石英ガラスが5ppm未満のOH含有率、及び50ppm未満のフッ素含有率を有することを特徴とする端部素子。
- 前記石英ガラスは、1.5×1016と2×1018分子/cm3との間の水素含有量を有する、請求項6記載の端部素子(14)。
- 請求項1乃至5のいずれか1項に記載の投影レンズ(5)と請求項6又は7記載の端部素子(14)とを備えるマイクロリソグラフィ投影露光装置であって、前記投影露光装置では、浸液(15)が、前記端部素子(14)と感光性の基板(10)との間に配置される、マイクロリソグラフィ投影露光装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2005/006654 WO2006136184A1 (de) | 2005-06-21 | 2005-06-21 | Projektionsobjektiv für die mikrolithographie und abschlusselement dafür |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008546622A JP2008546622A (ja) | 2008-12-25 |
JP5091128B2 true JP5091128B2 (ja) | 2012-12-05 |
Family
ID=36650838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008517327A Active JP5091128B2 (ja) | 2005-06-21 | 2005-06-21 | マイクロリソグラフィ用の投影レンズおよびそのための端部素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20100149500A1 (ja) |
JP (1) | JP5091128B2 (ja) |
DE (1) | DE112005003613B4 (ja) |
WO (1) | WO2006136184A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013215292A1 (de) | 2013-08-02 | 2015-02-05 | Carl Zeiss Smt Gmbh | Verfahren zum Beladen eines Rohlings aus Quarzglas mit Wasserstoff, Linsenelement und Projektionsobjektiv |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
JP3125630B2 (ja) * | 1994-07-07 | 2001-01-22 | 株式会社ニコン | 真空紫外用石英ガラスの製造方法および石英ガラス光学部材 |
KR100298167B1 (ko) * | 1994-07-07 | 2001-10-24 | 오노 시게오 | 진공자외선파장대광선용실리카유리의제조방법,및그에의해제조된실리카유리및광학부재 |
US5616159A (en) * | 1995-04-14 | 1997-04-01 | Corning Incorporated | Method of forming high purity fused silica having high resistance to optical damage |
JPH1067526A (ja) * | 1996-08-22 | 1998-03-10 | Nikon Corp | 石英ガラス光学部材 |
EP0835848A3 (en) * | 1996-08-21 | 1998-06-10 | Nikon Corporation | Fluorine-containing silica glass, its method of manufacture and a projection exposure apparatus comprising the glass |
US6291377B1 (en) * | 1997-08-21 | 2001-09-18 | Nikon Corporation | Silica glass and its manufacturing method |
EP1043282A4 (en) * | 1998-10-28 | 2004-03-31 | Asahi Glass Co Ltd | SYNTHETIC QUARTZ GLASS AND MANUFACTURING METHOD |
WO2000039040A1 (fr) * | 1998-12-25 | 2000-07-06 | Asahi Glass Company, Limited | Verre de quartz synthetique et procede de preparation associe |
WO2000058231A1 (fr) * | 1999-03-25 | 2000-10-05 | Asahi Glass Company, Limited | Verre de silice synthetique pour element optique, son procede de fabrication et d'utilisation |
DE19921795A1 (de) * | 1999-05-11 | 2000-11-23 | Zeiss Carl Fa | Projektions-Belichtungsanlage und Belichtungsverfahren der Mikrolithographie |
JP2001176789A (ja) * | 1999-12-21 | 2001-06-29 | Nikon Corp | 投影露光装置および該投影露光装置を用いたデバイスの製造方法 |
JP4228493B2 (ja) * | 1999-12-22 | 2009-02-25 | 旭硝子株式会社 | 合成石英ガラス |
JP3865039B2 (ja) * | 2000-08-18 | 2007-01-10 | 信越化学工業株式会社 | 合成石英ガラスの製造方法および合成石英ガラス並びに合成石英ガラス基板 |
US6856713B2 (en) * | 2001-08-20 | 2005-02-15 | Polymicro Technologies, Llc | Optical component and method of making the same |
JP4104338B2 (ja) * | 2002-01-31 | 2008-06-18 | 信越石英株式会社 | ArF露光装置用合成石英ガラス素材 |
JP4213413B2 (ja) * | 2002-06-26 | 2009-01-21 | 東ソー株式会社 | 真空紫外光用高均質合成石英ガラス、その製造方法及びこれを用いた真空紫外光用マスク基板 |
JP3531870B2 (ja) * | 2002-03-27 | 2004-05-31 | 独立行政法人 科学技術振興機構 | 合成石英ガラス |
CN100389085C (zh) * | 2002-04-23 | 2008-05-21 | 旭硝子株式会社 | 光学构件用合成石英玻璃、投影曝光装置及投影曝光方法 |
DE102004017031B4 (de) * | 2004-04-02 | 2008-10-23 | Heraeus Quarzglas Gmbh & Co. Kg | Optisches Bauteil aus Quarzglas, Verfahren zur Herstellung des Bauteils und Verwendung desselben |
US7506522B2 (en) * | 2004-12-29 | 2009-03-24 | Corning Incorporated | High refractive index homogeneity fused silica glass and method of making same |
-
2005
- 2005-06-21 JP JP2008517327A patent/JP5091128B2/ja active Active
- 2005-06-21 US US11/993,422 patent/US20100149500A1/en not_active Abandoned
- 2005-06-21 WO PCT/EP2005/006654 patent/WO2006136184A1/de active Application Filing
- 2005-06-21 DE DE112005003613.8T patent/DE112005003613B4/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20100149500A1 (en) | 2010-06-17 |
DE112005003613A5 (de) | 2008-05-08 |
WO2006136184A1 (de) | 2006-12-28 |
DE112005003613B4 (de) | 2015-07-23 |
JP2008546622A (ja) | 2008-12-25 |
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