JP5080766B2 - 磁気抵抗メモリ素子 - Google Patents
磁気抵抗メモリ素子 Download PDFInfo
- Publication number
- JP5080766B2 JP5080766B2 JP2006232243A JP2006232243A JP5080766B2 JP 5080766 B2 JP5080766 B2 JP 5080766B2 JP 2006232243 A JP2006232243 A JP 2006232243A JP 2006232243 A JP2006232243 A JP 2006232243A JP 5080766 B2 JP5080766 B2 JP 5080766B2
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- JP
- Japan
- Prior art keywords
- magnetic field
- nanochannel
- pinning
- wall
- magnetoresistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 claims description 138
- 239000002090 nanochannel Substances 0.000 claims description 73
- 230000008859 change Effects 0.000 claims description 7
- 208000031481 Pathologic Constriction Diseases 0.000 claims description 5
- 208000037804 stenosis Diseases 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 2
- 230000005415 magnetization Effects 0.000 description 34
- 230000006870 function Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 13
- 239000010410 layer Substances 0.000 description 13
- 230000005294 ferromagnetic effect Effects 0.000 description 12
- 238000005259 measurement Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000001803 electron scattering Methods 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 230000005381 magnetic domain Effects 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 101710176296 Switch 2 Proteins 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 4
- 239000003302 ferromagnetic material Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910002546 FeCo Inorganic materials 0.000 description 1
- 229910015136 FeMn Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- IGPAMRAHTMKVDN-UHFFFAOYSA-N strontium dioxido(dioxo)manganese lanthanum(3+) Chemical compound [Sr+2].[La+3].[O-][Mn]([O-])(=O)=O IGPAMRAHTMKVDN-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/953—Detector using nanostructure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
Description
12,13,22,23 パッド
11,21 ナノチャネル
15,25 ドメイン壁
Claims (1)
- ナノ狭窄の形状を有し、ピンニング電流(i1,i2)による磁界に応答する磁気抵抗メモリ素子(40)であって、
磁気材料からなる少なくとも2つのパッド(22,23)と、パッド同士を接続するためのナノチャネル(41)とを備え、パッド(22,23)は、互いに実質的に反対方向に配向した個々の磁化を受けており、
前記ナノチャネル(41)には、ナノチャネル(41)に沿って変位可能な単一の磁壁が配置され、磁気抵抗メモリ素子(40)の電気抵抗(R)は、前記磁壁の位置に応じて変化するものであり、
前記ナノチャネル(41)に複数の狭窄(50,50’)を設けることによって、複数の異なる抵抗値を不揮発的に保存できるようにした磁気抵抗メモリ素子(40)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2005A000759 | 2005-10-26 | ||
IT000759A ITTO20050759A1 (it) | 2005-10-26 | 2005-10-26 | Rete magnetoresistiva nanostrutturata e relativo procedimento di rilevazione di campo magnetico |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007123838A JP2007123838A (ja) | 2007-05-17 |
JP5080766B2 true JP5080766B2 (ja) | 2012-11-21 |
Family
ID=35501412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006232243A Expired - Fee Related JP5080766B2 (ja) | 2005-10-26 | 2006-08-29 | 磁気抵抗メモリ素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7352178B2 (ja) |
EP (1) | EP1780554A3 (ja) |
JP (1) | JP5080766B2 (ja) |
CN (1) | CN1955755B (ja) |
IT (1) | ITTO20050759A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4945721B2 (ja) * | 2004-10-27 | 2012-06-06 | 国立大学法人東北大学 | 磁気抵抗効果素子及び磁気メモリ装置 |
ITTO20050758A1 (it) * | 2005-10-26 | 2007-04-27 | Fiat Ricerche | Dispositivo di rilevazione di grandezze fisiche in particolare un campo magnetico a film sottile e relativo procedimento di rilevazione |
KR100791651B1 (ko) * | 2006-03-21 | 2008-01-03 | 고려대학교 산학협력단 | 개선된 접합형태를 가지는 나노접합 장치 |
US7552636B2 (en) * | 2007-04-17 | 2009-06-30 | Ut-Battelle, Llc | Electron/hole transport-based NEMS gyro and devices using the same |
JP4965387B2 (ja) * | 2007-08-21 | 2012-07-04 | セイコーインスツル株式会社 | 磁気センサ回路 |
CN102451971B (zh) * | 2010-10-20 | 2014-02-19 | 北京卫星环境工程研究所 | 航天器热试验用盘管式铜热沉的制造工艺 |
US9048410B2 (en) | 2013-05-31 | 2015-06-02 | Micron Technology, Inc. | Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls |
JP2016066634A (ja) | 2014-09-22 | 2016-04-28 | 株式会社東芝 | 磁気論理素子、磁気論理回路、磁気メモリ |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3813660A (en) | 1972-12-11 | 1974-05-28 | Gte Laboratories Inc | An rf magneto-resistive magnetic domain detector |
US3838406A (en) | 1973-03-23 | 1974-09-24 | Gte Laboratories Inc | Magneto-resistive magnetic domain detector |
US4159537A (en) | 1978-05-01 | 1979-06-26 | Burroughs Corporation | Bubble detector-dynamic level signal shifting |
DE69331895T2 (de) * | 1992-12-29 | 2002-12-19 | Eastman Kodak Co., Rochester | Magnetoresistiver Magnetfeldsensor mit sehr langem Wirkbereich |
JPH07272221A (ja) | 1994-03-31 | 1995-10-20 | Yamaha Corp | 磁気抵抗効果型薄膜ヘッド |
EP0843827A2 (en) * | 1996-06-12 | 1998-05-27 | Koninklijke Philips Electronics N.V. | A magneto-resistive magnetic field sensor |
JP2002270922A (ja) * | 2001-03-13 | 2002-09-20 | Matsushita Electric Ind Co Ltd | 磁気抵抗素子 |
JP3655229B2 (ja) * | 2001-09-26 | 2005-06-02 | 株式会社東芝 | 磁気抵抗効果素子及びその製造方法、磁気検出素子並びに磁気記録再生素子 |
JP4019809B2 (ja) * | 2002-06-13 | 2007-12-12 | 富士ゼロックス株式会社 | 電子写真感光体、電子写真感光体の製造方法、プロセスカートリッジ及び電子写真装置 |
US7204013B2 (en) * | 2003-07-29 | 2007-04-17 | Seagate Technology Llc | Method of manufacturing a magnetoresistive sensor |
ATE448487T1 (de) * | 2003-12-04 | 2009-11-15 | Nxp Bv | Magnetfeldempfindliche sensoranordnung |
JP4932275B2 (ja) * | 2005-02-23 | 2012-05-16 | 株式会社日立製作所 | 磁気抵抗効果素子 |
-
2005
- 2005-10-26 IT IT000759A patent/ITTO20050759A1/it unknown
-
2006
- 2006-07-07 EP EP06116790A patent/EP1780554A3/en not_active Withdrawn
- 2006-08-14 US US11/503,265 patent/US7352178B2/en not_active Expired - Fee Related
- 2006-08-29 JP JP2006232243A patent/JP5080766B2/ja not_active Expired - Fee Related
- 2006-08-30 CN CN2006101517114A patent/CN1955755B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1955755A (zh) | 2007-05-02 |
US7352178B2 (en) | 2008-04-01 |
EP1780554A2 (en) | 2007-05-02 |
JP2007123838A (ja) | 2007-05-17 |
CN1955755B (zh) | 2010-09-01 |
US20070090835A1 (en) | 2007-04-26 |
ITTO20050759A1 (it) | 2007-04-27 |
EP1780554A3 (en) | 2010-12-08 |
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