JP5079932B2 - 実装用基板及びその製造方法、発光モジュール並びに照明装置 - Google Patents
実装用基板及びその製造方法、発光モジュール並びに照明装置 Download PDFInfo
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- JP5079932B2 JP5079932B2 JP2012514701A JP2012514701A JP5079932B2 JP 5079932 B2 JP5079932 B2 JP 5079932B2 JP 2012514701 A JP2012514701 A JP 2012514701A JP 2012514701 A JP2012514701 A JP 2012514701A JP 5079932 B2 JP5079932 B2 JP 5079932B2
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- 238000000034 method Methods 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 239000000758 substrate Substances 0.000 claims description 670
- 239000011521 glass Substances 0.000 claims description 201
- 239000010419 fine particle Substances 0.000 claims description 152
- 239000004065 semiconductor Substances 0.000 claims description 95
- 229910044991 metal oxide Inorganic materials 0.000 claims description 74
- 150000004706 metal oxides Chemical class 0.000 claims description 74
- 238000007747 plating Methods 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 51
- 238000007789 sealing Methods 0.000 claims description 48
- 239000000919 ceramic Substances 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 43
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 40
- 229920005989 resin Polymers 0.000 claims description 34
- 239000011347 resin Substances 0.000 claims description 34
- 239000000843 powder Substances 0.000 claims description 29
- 238000002834 transmittance Methods 0.000 claims description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 16
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 14
- 238000004898 kneading Methods 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 7
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 7
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 5
- 239000002245 particle Substances 0.000 description 39
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 37
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 36
- 230000004048 modification Effects 0.000 description 35
- 238000012986 modification Methods 0.000 description 35
- 239000010931 gold Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 239000003929 acidic solution Substances 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 18
- 230000001681 protective effect Effects 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
- 230000017525 heat dissipation Effects 0.000 description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 238000005286 illumination Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000002904 solvent Substances 0.000 description 10
- 239000011230 binding agent Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000005304 joining Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 238000010304 firing Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229920002050 silicone resin Polymers 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000005543 nano-size silicon particle Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H05K1/02—Details
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- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
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-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21V7/00—Reflectors for light sources
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- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
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- H05K2201/09—Shape and layout
- H05K2201/09145—Edge details
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K3/22—Secondary treatment of printed circuits
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
まず、本発明の第1の実施形態に係るLEDランプ10の全体構成について説明する。
次に、本発明の第2の実施形態に係るLEDランプ10aの全体構成について説明する。
次に、本発明の第3の実施形態に係るLEDランプ10bの全体構成について説明する。
次に、本実施形態の変形例1に係る実装用基板101bについて、図21を用いて説明する。図21は、本変形例1に係る実装用基板101bの一部拡大断面図である。なお、図21は、図19に対応するものであり、図18A〜図19に示す構成要素と同じ構成要素については、同じ符号を付しており、その説明は省略する。また、図21に示す構成要素以外の構成要素は、図15〜図18Cに示す構成要素と同様である。
次に、本実施形態の変形例2に係る実装用基板101bについて、図22を用いて説明する。図22は、本変形例2に係る実装用基板101bの一部拡大断面図である。なお、図21において、図20に示す構成要素と同じ構成要素については、同じ符号を付しており、その説明は省略する。
次に、本発明の実施形態の変形例3に係る実装用基板101bについて、図23を用いて説明する。図23は、本変形例3に係る実装用基板101bの一部拡大断面図である。なお、図23において、図19に示す構成要素と同じ構成要素については、同じ符号を付しており、その説明は省略する。
次に、本発明の第4の実施形態に係るLEDランプ10cの全体構成について説明する。
本発明の第5の実施形態に係る照明器具3200の全体構成について説明する。
2、3211 口金
2a 中空部
2b、2c、62b 螺合部
3 ヒートシンク
3a 第1開口部
3b 第2開口部
4、4a、4b、4c LEDモジュール
4d 止め金具
5 光源取り付け部材
5a 凹部
6 樹脂ケース
7 電源回路
8 絶縁リング
10、10a、10b、10c、3210 LEDランプ
61 第1ケース部
61a、62a 開口部
62 第2ケース部
63 樹脂キャップ
63a 突出部
63b 貫通孔
71 回路素子群
71a 第1容量素子
71b 第2容量素子
71c 抵抗素子
71d 電圧変換素子
71e 半導体素子
72 回路基板
72a 切欠部
73a、73b、104 電極
101、101a、101b、101c、2210 実装用基板
102 LEDチップ
102a 第1電極
102b 第2電極
103 封止部材
105 端子
106、116、812、2120 反射膜
107 ワイヤー
108、2110 基板
108a 表面
108b、2110b 裏面
412、512、612、712 多層反射膜
413、513 第1の反射膜
413a、414a、2120a、812a 光反射微粒子
413b、414b、2120b、812b ガラスフリット
413h、414h、812h、2120h 空孔
414 第2の反射膜
514、714 保護膜
614 間接層
3200 照明器具
3220 点灯器具
3221 器具本体
3221a ソケット
3222 ランプカバー
3300 天井
Claims (23)
- 半導体発光素子が実装される実装用基板であって、
前記半導体発光素子が実装される表面を有し、前記半導体発光素子の光を透過させる基板と、
前記基板の裏面に形成された第1反射膜とを備え、
前記第1反射膜は、多層膜から構成され、
前記多層膜は、前記基板を透過した前記半導体発光素子の光を前記基板の表面に向けて反射させる第1の膜と、当該第1の膜の前記基板側とは反対側に形成された第2の膜とを有し、
前記第1の膜は、半導体発光素子の光を反射する酸化金属微粒子とガラスフリットとを含み、
前記第2の膜は、ガラスフリットを含み、
前記第2の膜における前記ガラスフリットの体積濃度が、前記第1の膜における前記ガラスフリットの体積濃度よりも大きい
実装用基板。 - 前記第1反射膜の膜厚は、10μm以上100μm以下である
請求項1に記載の実装用基板。 - 前記基板は、前記半導体発光素子の光に対して1%以上の透過率を有する
請求項1又は2に記載の実装用基板。 - 前記実装用基板は、さらに、前記基板の端面に形成され、前記基板を透過した前記半導体発光素子の光を前記基板の表面に向けて反射させる第2反射膜を備え、
前記第2反射膜は、酸化金属微粒子と、ガラスフリットから構成される
請求項1〜3のいずれか1項に記載の実装用基板。 - 前記基板は、端面に、裏面から表面に向けて広がるように傾斜している傾斜面を持つ
請求項4に記載の実装用基板。 - 前記基板の表面における前記半導体発光素子が実装される領域及び電極が形成される領域以外の領域には、凹凸が形成されている
請求項1〜5のいずれか1項に記載の実装用基板。 - 前記第1反射膜は、前記基板の裏面の全面に形成されている
請求項1〜6のいずれか1項に記載の実装用基板。 - 前記基板は、樹脂基板、ガラス基板、又はセラミック基板である
請求項1〜7のいずれか1項に記載の実装用基板。 - 前記第2の膜は、さらに、前記酸化金属微粒子を含み、
前記第2の膜における前記ガラスフリットの体積濃度が20%以上である
請求項1に記載の実装用基板。 - 前記第1の膜における前記ガラスフリットの体積濃度が20%未満である
請求項1又は9に記載の実装用基板。 - 前記第2の膜がガラスフリットのみからなる
請求項1に記載の実装用基板。 - 前記多層膜は、さらに、ガラスフリットのみからなる第3の膜を有し、
前記第3の膜は、前記基板と前記第1の膜との間に形成される
請求項1〜11のいずれか1項に記載の実装用基板。 - 前記多層膜は、さらに、ガラスフリットのみからなる第3の膜を有し、
前記第3の膜は、前記第2の膜の前記第1の膜とは反対側に形成される
請求項1〜12のいずれか1項に記載の実装用基板。 - 前記基板の表面に、メッキ処理が施された電極が形成されている
請求項1〜13のいずれか1項に記載の実装用基板。 - 前記ガラスフリットが、SiO2−B2O3−R2O(但し、R2Oは、Li2O、Na2O、又は、K2Oである)から構成されている
請求項1〜14のいずれか1項に記載の実装用基板。 - 前記基板は、セラミック基板である
請求項1〜15のいずれか1項に記載の実装用基板。 - 前記酸化金属微粒子は、酸化チタン、酸化アルミニウム、酸化亜鉛、酸化ジルコニア、又は、酸化マグネシウムから構成されている
請求項1〜16のいずれか1項に記載の実装用基板。 - 半導体発光素子が実装される実装用基板の製造方法であって、
前記半導体発光素子が実装される表面を有し、前記半導体発光素子の光を透過させる基板の裏面に反射膜を形成する工程と、
前記基板の表面に電極を形成する工程とを含み、
前記反射膜を形成する工程は、
前記基板の裏面に前記半導体発光素子の光を反射する酸化金属微粒子とガラス粉末とを含む材料を混練してなるペーストを塗布して加熱することにより、前記酸化金属微粒子とガラスフリットとを含み、前記基板を透過した前記半導体発光素子の光を前記基板の表面に向けて反射させる第1の膜を形成する工程と、
前記第1の膜の前記基板とは反対側の面にガラス粉末を含む材料を混練してなるペーストを塗布して加熱することにより、ガラスフリットを含む第2の膜を形成する工程とを有し、
前記第2の膜における前記ガラスフリットの体積濃度が、前記第1の膜における前記ガラスフリットの体積濃度よりも大きい
実装用基板の製造方法。 - 前記実装用基板の製造方法は、さらに、
前記電極に対してメッキ処理を施すメッキ処理工程を含む
請求項18に記載の実装用基板の製造方法。 - 基板と、前記基板の裏面に形成された反射膜とを有する実装用基板と、
前記基板の表面に実装された半導体発光素子とを備え、
前記基板は、前記半導体発光素子の光を透過させ、
前記反射膜は、多層膜から構成され、
前記多層膜は、前記基板を透過した前記半導体発光素子の光を前記基板の表面に向けて反射させる第1の膜と、当該第1の膜の前記基板側とは反対側に形成された第2の膜とを有し、
前記第1の膜は、前記半導体発光素子の光を反射する酸化金属微粒子とガラスフリットとを含み、
前記第2の膜は、ガラスフリットを含み、
前記第2の膜における前記ガラスフリットの体積濃度が、前記第1の膜における前記ガラスフリットの体積濃度よりも大きい
発光モジュール。 - 前記発光モジュールは、さらに、前記基板の表面に形成され、前記半導体発光素子を封止するための封止部材を備え、
前記封止部材及び前記基板は、略同一の屈折率を持つ
請求項20に記載の発光モジュール。 - 前記発光モジュールは、さらに、前記基板の表面に形成され、前記半導体発光素子と電気的に接続された電極を備え、
前記電極は、透明導電膜より構成されている
請求項20又は21に記載の発光モジュール。 - 請求項20〜22のいずれか1項に記載の発光モジュールを備える
照明装置。
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