JP5052597B2 - 積層型パッケージ要素の端子形成方法、及び、積層型パッケージの形成方法 - Google Patents
積層型パッケージ要素の端子形成方法、及び、積層型パッケージの形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 87
- 239000011810 insulating material Substances 0.000 claims description 48
- 239000004020 conductor Substances 0.000 claims description 44
- 230000008569 process Effects 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 28
- 239000003595 mist Substances 0.000 claims description 21
- 238000005507 spraying Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 description 114
- 239000007789 gas Substances 0.000 description 37
- 238000002347 injection Methods 0.000 description 21
- 239000007924 injection Substances 0.000 description 21
- 238000001723 curing Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 17
- 239000010410 layer Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 239000011230 binding agent Substances 0.000 description 12
- 239000002923 metal particle Substances 0.000 description 10
- 230000001590 oxidative effect Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000003796 beauty Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- OGIIWTRTOXDWEH-UHFFFAOYSA-N [O].[O-][O+]=O Chemical compound [O].[O-][O+]=O OGIIWTRTOXDWEH-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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Description
以下、本発明による積層型パッケージ要素の端子形成方法、及び、積層型パッケージの形成方法の一実施形態を、図面を参照しながら説明する。
まず、後述する半導体チップの端子形成や、半導体チップモジュールの半導体チップ間(層間)の配線形成に用いる配線形成装置について説明する。
次に、この実施形態における3次元半導体チップモジュールの製造プロセスを、図1を参照しながら説明する。以下の説明で、半導体チップの端子形成プロセスや、半導体チップモジュールの半導体チップ間(層間)の配線形成プロセスの、3次元半導体チップモジュールの製造プロセスにおける位置(順番)を明らかにする。
次に、半導体チップに接続用端子を形成するプロセスの詳細を、図6のフローチャートを用いて説明する。
次に、半導体チップモジュールの半導体チップ間(層間)の配線を形成するプロセスの詳細を、図9のフローチャートを用いて説明する。
上記実施形態によれば、半導体チップの表面及び側面の接続用端子をミストジェット処理を適用した1回の形成動作で連続的に形成するようにしたので、表面の端子部分と側面の端子部分とが確実に接続される。その結果、端子における電気的特性(例えば、抵抗値)として所望する範囲内のものが得られる。
上記実施形態においては、半導体チップの表面及び側面に渡るように接続用端子を形成するものを示したが、半導体チップの表面、側面及び裏面に渡るように接続用端子を形成するようにしても良い。例えば、半導体チップを回動させながら回動中心を移動させることにより、1回の形成動作で、表面、側面及び裏面に渡るように接続用端子を形成することができる。
Claims (10)
- 表面に設けられている回路パターンと連結する接続用端子の一部が側面に設けられている、複数の積層型パッケージ要素を重ね合わせて結合した積層型パッケージの形成方法において、
上記各積層型パッケージ要素に対し、表面に設けられている回路パターンと連結する、少なくとも表面から側面へ至る接続用端子を形成する第1の工程と、
接続用端子が形成された複数の上記積層型パッケージ要素を重ね合わせて結合する第2の工程と、
結合された上記各積層型パッケージ要素における側面の接続用端子部分を、導電材をミスト状にして吹きかけると共に、吹きかける位置を移動させることを適用して形成される配線パターンによって相互に接続する第3の工程とを含み、
上記第1の工程は、
上記接続用端子を設ける領域を含む領域に絶縁材を付着させる第1のサブ工程と、
付着された上記絶縁材を硬化させる第2のサブ工程と、
上記接続用端子となる導電材を上記接続用端子を設ける領域に付着させる第3のサブ工程と、
付着された上記導電材を硬化させる第4のサブ工程とを含み、
上記第3のサブ工程は、ノズルからミスト状の導電材を絞り込んで噴射させることで上記接続用端子となる導電材を付着させると共に、上記ノズルを、所定角度で支持された上記積層型パッケージ要素の、少なくとも表面から側面へ相対的に移動させることで、少なくとも表面から側面へ至る上記接続用端子を1回の相対移動で形成する
ことを特徴とする積層型パッケージの形成方法。 - 上記第2のサブ工程では紫外線を使用して付着された上記絶縁材を硬化させることを特徴とする請求項1に記載の積層型パッケージの形成方法。
- 上記第4のサブ工程では大気プラズマを使用して付着された上記導電材を硬化させることを特徴とする請求項1に記載の積層型パッケージの形成方法。
- 上記配線パターンが、パターン同士で交差する部分を有するとき、交差部分の下側の配線パターン部分、及び、交差部分の上側の配線パターン部分をそれぞれ、異なるタイミングで実行される上記第3の工程で形成することを特徴とする請求項1に記載の積層型パッケージの形成方法。
- 上記第3の工程は、
上記配線パターンを設ける領域を含む領域に絶縁材を付着させる第5のサブ工程と、
付着された上記絶縁材を硬化させる第6のサブ工程と、
上記配線パターンとなる導電材を付着させる第7のサブ工程と、
付着された上記導電材を硬化させる第8のサブ工程と
を含むことを特徴とする請求項1に記載の積層型パッケージの形成方法。 - 上記第6のサブ工程では紫外線を使用して付着された上記絶縁材を硬化させることを特徴とする請求項5に記載の積層型パッケージの形成方法。
- 上記第8のサブ工程では大気プラズマを使用して付着された上記導電材を硬化させることを特徴とする請求項5に記載の積層型パッケージの形成方法。
- 重ね合わされて結合されて積層型パッケージを構成するものとなる積層型パッケージ要素の、その表面に設けられている回路パターンと連結する少なくとも表面から側面へ至る接続用端子を形成する積層型パッケージ要素の端子形成方法であって、
上記接続用端子部分を、導電材をミスト状にして吹きかけると共に、吹きかける位置を移動させることを適用して形成する第5の工程を有し、
上記第5の工程は、上記接続用端子となる導電材を上記接続用端子を設ける領域に付着させる第9のサブ工程と、付着された上記導電材を硬化させる第10のサブ工程とを含み、
上記第5の工程に先立ち、上記接続用端子を設ける領域を含む領域に絶縁材を付着させる第11のサブ工程と、付着された上記絶縁材を硬化させる第12のサブ工程とを実行させておき、
上記第10のサブ工程は、ノズルからミスト状の導電材を絞り込んで噴射させることで上記接続用端子となる導電材を付着させると共に、上記ノズルを、所定角度で支持された上記積層型パッケージ要素の、少なくとも表面から側面へ相対的に移動させることで、少なくとも表面から側面へ至る上記接続用端子を1回の相対移動で形成する
ことを特徴とする積層型パッケージ要素の端子形成方法。 - 上記第12のサブ工程では紫外線を使用して付着された上記絶縁材を硬化させることを特徴とする請求項8に記載の積層型パッケージ要素の端子形成方法。
- 上記第10のサブ工程では大気プラズマを使用して付着された上記導電材を硬化させることを特徴とする請求項8に記載の積層型パッケージ要素の端子形成方法。
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