JP5045745B2 - 半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート - Google Patents
半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート Download PDFInfo
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- JP5045745B2 JP5045745B2 JP2009509251A JP2009509251A JP5045745B2 JP 5045745 B2 JP5045745 B2 JP 5045745B2 JP 2009509251 A JP2009509251 A JP 2009509251A JP 2009509251 A JP2009509251 A JP 2009509251A JP 5045745 B2 JP5045745 B2 JP 5045745B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Description
図1、2、3、4及び5は、第一実施形態に係る半導体チップの製造方法を示す端面図である。本実施形態に係る半導体チップの製造方法は、半導体ウェハ1、半導体用接着フィルム2及びダイシングテープ3がこの順で積層された積層体20を準備する工程(図1)と、積層体20に半導体ウェハ1側から切り込み40を形成する工程(図2、3)と、半導体用接着フィルム2を切り込み40に沿って分割する工程(図4)と、半導体チップ10を半導体用接着フィルム2とともにピックアップする工程(図5)とを備える。
引張試験機:SIMADZU製100Nオートグラフ「AGS−100NH」
チャック間距離(試験開始時):30mm
引張速度:5mm/分
最大応力(Pa)=最大荷重(N)/試料の断面積(m2)
最大荷重時の伸度(%)={(最大荷重時のチャック間長さ(mm)−30)/30}×100
引張破断伸度(%)={(破断時のチャック間長さ(mm)−30)/30}×100
図6、7、8及び9は、第二実施形態に係る半導体チップの製造方法を示す端面図である。本実施形態に係る方法は、半導体ウェハ1、半導体用接着フィルム2及びダイシングテープ3がこの順で積層された積層体20を準備する工程(図6〜8)と、ダイシングテープ3を複数の半導体チップ10が互いに離れる方向に引き伸ばすことにより、半導体ウェハ1を複数の半導体チップ10に分割するとともに半導体用接着フィルム2を分割する工程(図9)と、半導体チップ10を半導体用接着フィルム2とともにピックアップする工程とを備える。
実施例1
温度計、攪拌機及び塩化カルシウム管を備えた500mlの四つ口フラスコに、ジアミンとして1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(0.1mol)と、溶剤としてのN−メチル−2−ピロリドン150gを入れ、60℃にて攪拌した。ジアミンの溶解後、1,10−(デカメチレン)ビス(トリメリテート二無水物)(0.02mol)と4,4’−オキシジフタル酸二無水物(0.08mol)を少量ずつ添加し、60℃で3時間反応させた。その後、N2ガスを吹き込みながら170℃で加熱し、3時間かけて系中の水を溶剤の一部とともに共沸により除去した。水を除去して得たポリイミド樹脂のNMP溶液を接着フィルムの作製に用いた。
ジアミン成分として、1,3−ビス(3−アミノプロピル)テトラメチルジシロキサン(0.06mol)及び4,9−ジオキサデカン−1,12−ジアミン(0.04mol)を用いたことの他は実施例1と同様にして、ポリイミド樹脂のNMP溶液を得た。得られたポリイミド樹脂のNMP溶液を用いて、実施例1と同様にして接着フィルムを作製した。
窒化硼素フィラーの量を57重量%としたこと以外は実施例1と同様にして、接着フィルムを作製した。
比較例1の接着フィルムとしてDF−402、比較例2の接着フィルムとしてDF−470、比較例3の接着フィルムとしてDF−443を準備した(いずれも日立化成工業株式会社製のダイボンドフィルム)。
温度計、攪拌機及び塩化カルシウム管を備えた500mlの四つ口フラスコに、エーテルジアミン2000(BASF社製)(0.03モル)、1,12―ジアミノドデカン(0.07モル)及びN−メチル−2−ピロリドン150gを入れ、60℃にて撹拌した。ジアミンの溶解後、2,2−ビス[4−(3,4−ジカルボキシフェノキシ)フェニル]プロパン二無水物(0.1モル)を少量ずつ添加した。60℃で1時間反応させた後、N2ガスを吹き込みながら170℃で加熱し、水を溶剤の一部とともに共沸により除去した。水を除去して得たポリイミド樹脂のNMP溶液を接着フィルムの作製に用いた。得られた溶液を用いたこと、及び窒化硼素フィラーの量を全固形分の重量に対して25重量%としたことの他は実施例1と同様にして、接着フィルムを作製した。
窒化硼素フィラーの量を47重量%としたこと以外は比較例4と同様にして、接着フィルムを作製した。
(1)最大応力、最大荷重伸度、及び引張破断伸度
Bステージ状態の接着フィルムから切り出された短冊状の試験片(幅5mm、長さ50mm)を用いて引張試験を行った。得られた応力−ひずみ曲線から、下記計算式に基づいて最大応力、最大荷重伸度、及び引張破断伸度を求めた。引張試験は、引張試験機(SIMADZU製100Nオートグラフ、AGS−100NH)を用い、25℃の雰囲気中で、試験開始時のチャック間距離30mm、引張速度5mm/min.の条件で行った。
最大応力(Pa)=最大荷重(N)/試料の断面積(m2)
最大荷重伸度(%)=[(最大荷重におけるチャック間長さ(mm)−30)/30]×100
引張破断伸度(%)=[(破断時のチャック間長さ(mm)−30)/30]×100
所定の温度に加温されたホットロールラミネータ(0.3m/分、0.3MPa)を用いて幅10mmの接着フィルムと半導体ウェハを貼り合わせ、その後、接着フィルムを25℃の雰囲気中、引張り角度90°、引張り速度50mm/分で接着フィルムを引き剥がすピール試験を行って、ピール強度を求めた。ピール試験は、TOYOBALDWIN製UTM−4−100型テンシロンを用いて行った。ホットロールラミネータの設定温度を40℃から10℃ずつ昇温していき、20N/m以上のピール強度が得られたときのホットロールラミネータ温度のうち、最も低い温度をウェハ貼り付け温度とした。
厚さ400μmのシリコンウェハを250μmの深さまでその表側からハーフカットし、裏側方向に力を加えて割ることにより、周縁部に幅150μmの爪が形成された4mm×2mmのシリコンチップを準備した。このシリコンチップと42アロイリードフレームの間に、4mm×2mmの大きさに切り出した接着フィルムを挟んだ。全体に200gfの荷重を加えて160℃で5秒間圧着し、180℃で60分間の加熱により接着フィルムを後硬化させた。次いで、260℃、20秒加熱時のチップ引剥し強さを、プッシュプルゲージを改良した図14に示す測定装置15を用いて測定した。測定装置15は、熱盤14と、該熱盤14上に載置されたダイパット13と、プッシュプルゲージ12とを備える。測定装置15のダイパット13上に試料を載置して、シリコンチップの爪にプッシュプルゲージ12を引っ掛けてチップ引き剥がし強さの測定を行った。このピール強度の測定は、初期、及び85℃、85%RHの環境下で48時間放置する高温高湿処理を施した後のサンプルについて行った。この測定によれば、接着フィルムの面接着強度を測定することができる。この数値が高いほどリフロークラックが発生しにくくなる。
5mm角に切断されたシリコンチップ及びこれに貼り付けられた接着フィルムを有する接着フィルム付きシリコンチップを、基材としてのポリイミドフィルム(厚さ25μm)の表面に配線が形成された配線基板に接合した。次いで、そのシリコンチップ上に、5mm角の別の接着フィルム付きシリコンチップを接合した。
A:全てのサンプルでクラック発生が認められない。
C:1個以上のサンプルでクラック発生。
上述の実施例又は比較例で作製した接着フィルムを半導体ウェハに貼り合わせ、以下の「フルカット」、「ハーフカット」又は「レーザーダイシング」の方法により半導体ウェハを半導体チップに分割し、そのときの接着フィルムの破断性と、チップクラック及びバリの発生状態を確認した。いずれの方法においても、塩化ビニル系テープ(厚さ90μm)をダイシングテープとして用いた。
ホットロールラミネータ(JCM社製DM−300H、0.3m/分、0.3MPa)を用い、表1のウェハ貼り付け温度でそれぞれの接着フィルムを50μm厚の半導体ウェハに貼り付けた。次いで、熱板温度80℃の条件でダイシングテープを接着フィルム上にラミネートし、ダイシングサンプルを作製した。ダイシングテープ周縁部にステンレス製のリングを貼り付け、DISCO社製DFD−6361を用いてダイシングサンプルを切断した。切断はブレード1枚で加工を完了するシングルカット方式、ブレードがNBC−ZH104F−SE 27HDBB、ブレード回転数45,000rpm、切断速度50mm/sの条件にて行った。切断時のブレードハイト(切込み深さ)は接着フィルムを完全に切断する高さである80μmとした。続いて、リングを固定した状態で、エキスパンド装置によりダイシングテープを引き伸ばした。エキスパンド速度は10mm/s、エキスパンド量は3mmであった。
ブレードハイト(切込み深さ)を、ダイボンドフィルムのうち10μmの厚さ分が切断されずに残る高さである100μmとしたこと以外は、上記フルカットと同一の条件で試験を行った。
半導体ウェハ(厚さ50μm)にレーザー照射して、その内部に半導体チップに分画する線に沿った改質部を形成した。その後、フルカットの場合と同様の手順で接着フィルム及びダイシングテープを順次貼り付け、ダイシングテープの外周部にステンレス製のリングを貼り付けた。続いて、エキスパンド装置により、リングを固定した状態でダイシングテープを引き伸ばした。エキスパンド速度は30mm/s、エキスパンド量は15mmであった。
ダイシングテープを引き伸ばした後、接着フィルムが破断されたか否かを光学顕微鏡で観察し、切断面の全長のうち、完全に破断していた部分の長さの比率を求め、係る比率を以下の基準で分類して破断性を評価した。なお、フルカットの場合はブレードで接着フィルムをダイシングブレードで切断するため、破断性の評価は行わなかった。
AA:98%以上
A:90%以上
B:50%以上90%未満
C:50%未満
ダイシングテープを引き伸ばした後、チップクラックの発生状態を光学顕微鏡で観察した。半導体チップの接着フィルムとは反対側の面において発生したチップクラックの長さを求め、チップクラックの長さを以下の基準で分類してチップクラックの発生状態を評価した。
AA:5μm未満
A:5μm以上10μm未満
B:10以上25μm未満
C:25μm以上
ダイシングテープを引き伸ばした後、半導体チップを接着フィルムとともにピックアップした。ピックアップされた接着フィルム付き半導体チップの端面を光学顕微鏡で観察して、バリの発生状態を確認した。
AA:バリの長さが20μm未満
A:バリの長さが20μm以上40μm未満
B:バリの長さが40以上100μm未満
C:バリの長さが100μm以上
Claims (8)
- 半導体ウェハ、半導体用接着フィルム及びダイシングテープがこの順で積層され、前記半導体用接着フィルムが5%未満の引張破断伸度を有し該引張破断伸度が最大荷重時の伸度の110%未満であり、前記半導体ウェハが複数の半導体チップに分割されるとともに前記半導体用接着フィルムの厚さ方向の少なくとも一部が切断されずに残るように前記半導体ウェハ側から切り込みが形成されている積層体を準備する工程と、
前記ダイシングテープを前記複数の半導体チップが互いに離れる方向に引き伸ばすことにより、前記半導体用接着フィルムを前記切り込みに沿って分割する工程と、
を備える半導体チップの製造方法。 - 半導体ウェハ、半導体用接着フィルム及びダイシングテープがこの順で積層され、前記半導体用接着フィルムが5%未満の引張破断伸度を有し該引張破断伸度が最大荷重時の伸度の110%未満であり、前記半導体ウェハを複数の半導体チップに分画する線に沿ってレーザー加工により前記半導体ウェハに改質部が形成されている積層体を準備する工程と、
前記ダイシングテープを前記複数の半導体チップが互いに離れる方向に引き伸ばすことにより、前記半導体ウェハを前記複数の半導体チップに分割するとともに前記半導体用接着フィルムを前記改質部に沿って分割する工程と、
を備える半導体チップの製造方法。 - 前記半導体用接着フィルムが、熱可塑性樹脂、熱硬化性成分及びフィラーを含有し、前記フィラーの含有量が当該半導体用接着フィルムの質量に対して30質量%未満である、請求項1又は2記載の製造方法。
- 前記積層体を準備する工程が、前記半導体用接着フィルムを100℃以下の温度で前記半導体ウェハに貼り付ける工程を含む、請求項1又は2記載の製造方法。
- 5%未満の引張破断伸度を有し該引張破断伸度が最大荷重時の伸度の110%未満である、請求項1又は2記載の製造方法に用いるための半導体用接着フィルム。
- 100℃以下で半導体ウェハに貼り付け可能である、請求項5記載の半導体用接着フィルム。
- 熱可塑性樹脂、熱硬化性成分及びフィラーを含有し、前記フィラーの含有量が当該半導体用接着フィルムの質量に対して30質量%未満である、請求項5記載の半導体用接着フィルム。
- 請求項5記載の半導体用接着フィルムと、
該半導体用接着フィルムの一方面側に積層されたダイシングテープと、
を備える複合シート。
Priority Applications (1)
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JP2009509251A JP5045745B2 (ja) | 2007-04-05 | 2008-03-31 | 半導体チップの製造方法、並びに半導体用接着フィルム及びこれを用いた複合シート |
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US (2) | US8232185B2 (ja) |
EP (1) | EP2139028A1 (ja) |
JP (1) | JP5045745B2 (ja) |
KR (1) | KR101162819B1 (ja) |
CN (1) | CN101647096B (ja) |
TW (1) | TWI419215B (ja) |
WO (1) | WO2008126718A1 (ja) |
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KR101176431B1 (ko) * | 2007-10-09 | 2012-08-30 | 히다치 가세고교 가부시끼가이샤 | 접착 필름이 부착된 반도체칩의 제조 방법, 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법 |
KR20120002556A (ko) | 2007-10-09 | 2012-01-05 | 히다치 가세고교 가부시끼가이샤 | 접착 필름이 부착된 반도체칩의 제조 방법 및 이 제조 방법에 사용되는 반도체용 접착 필름, 및 반도체 장치의 제조 방법 |
CN102753636B (zh) * | 2010-02-12 | 2014-02-12 | 道康宁公司 | 用于半导体加工的暂时晶片粘结方法 |
JP5554118B2 (ja) * | 2010-03-31 | 2014-07-23 | 古河電気工業株式会社 | ウエハ加工用テープ |
JP2012069919A (ja) * | 2010-08-25 | 2012-04-05 | Toshiba Corp | 半導体装置の製造方法 |
JP2012195388A (ja) * | 2011-03-15 | 2012-10-11 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
US9559004B2 (en) | 2011-05-12 | 2017-01-31 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy |
JP2013008915A (ja) * | 2011-06-27 | 2013-01-10 | Toshiba Corp | 基板加工方法及び基板加工装置 |
CN103013365A (zh) * | 2011-09-23 | 2013-04-03 | 古河电气工业株式会社 | 晶片加工用带 |
CN103178007A (zh) * | 2011-12-20 | 2013-06-26 | 杭州士兰集成电路有限公司 | 划片方法、芯片制作方法及凸点玻璃封装二极管 |
US8936969B2 (en) | 2012-03-21 | 2015-01-20 | Stats Chippac, Ltd. | Semiconductor device and method of singulating semiconductor wafer along modified region within non-active region formed by irradiating energy through mounting tape |
JP6028460B2 (ja) * | 2012-08-24 | 2016-11-16 | 日立化成株式会社 | 半導体装置の製造方法及び半導体装置 |
CN104647615A (zh) * | 2013-11-15 | 2015-05-27 | 台湾暹劲股份有限公司 | 晶圆切割装置及其切割方法 |
JP6310748B2 (ja) * | 2014-03-31 | 2018-04-11 | 日東電工株式会社 | ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、半導体装置、及び、半導体装置の製造方法 |
WO2016080570A1 (ko) * | 2014-11-20 | 2016-05-26 | 주식회사 이녹스 | 유기전자장치용 봉지재 및 이를 포함하는 발광장치 |
JP7041476B2 (ja) * | 2017-07-04 | 2022-03-24 | 日東電工株式会社 | ダイシングテープおよびダイシングダイボンドフィルム |
CN107353841A (zh) * | 2017-08-14 | 2017-11-17 | 东莞市哲华电子有限公司 | 一种Mylar片的低成本生产工艺 |
JP6977588B2 (ja) * | 2018-01-30 | 2021-12-08 | 昭和電工マテリアルズ株式会社 | 半導体装置の製造方法及び接着フィルム |
JP7019254B2 (ja) * | 2018-04-10 | 2022-02-15 | 株式会社ディスコ | 被加工物の切削方法 |
JP7305268B2 (ja) * | 2019-08-07 | 2023-07-10 | 株式会社ディスコ | ウェーハの加工方法 |
JP7471879B2 (ja) | 2020-03-18 | 2024-04-22 | リンテック株式会社 | フィルム状接着剤及びダイシングダイボンディングシート |
JP7471880B2 (ja) | 2020-03-18 | 2024-04-22 | リンテック株式会社 | フィルム状接着剤及びダイシングダイボンディングシート |
CN113299594B (zh) * | 2021-05-25 | 2022-12-30 | 江西信芯半导体有限公司 | Tvs芯片贴蓝膜后加工方法 |
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- 2008-03-31 CN CN2008800107124A patent/CN101647096B/zh not_active Expired - Fee Related
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- 2008-03-31 WO PCT/JP2008/056361 patent/WO2008126718A1/ja active Application Filing
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US8232185B2 (en) | 2012-07-31 |
US20120244347A1 (en) | 2012-09-27 |
CN101647096B (zh) | 2012-01-04 |
KR101162819B1 (ko) | 2012-07-05 |
JPWO2008126718A1 (ja) | 2010-07-22 |
KR20090126249A (ko) | 2009-12-08 |
US20100120229A1 (en) | 2010-05-13 |
WO2008126718A1 (ja) | 2008-10-23 |
TWI419215B (zh) | 2013-12-11 |
TW200903609A (en) | 2009-01-16 |
EP2139028A1 (en) | 2009-12-30 |
CN101647096A (zh) | 2010-02-10 |
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