JP5027647B2 - 単一のステップmocvdによって製造される埋め込みヘテロ構造デバイス - Google Patents
単一のステップmocvdによって製造される埋め込みヘテロ構造デバイス Download PDFInfo
- Publication number
- JP5027647B2 JP5027647B2 JP2007500962A JP2007500962A JP5027647B2 JP 5027647 B2 JP5027647 B2 JP 5027647B2 JP 2007500962 A JP2007500962 A JP 2007500962A JP 2007500962 A JP2007500962 A JP 2007500962A JP 5027647 B2 JP5027647 B2 JP 5027647B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- layer
- optical waveguide
- waveguide core
- core mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
- H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Description
Claims (4)
- 成長面(122)を有するウェハ(110)を準備し、
第1の成長温度で、前記成長面上に、サイドウォールを有する光導波コアメサ(140)をマイクロ選択領域成長により成長させ、
前記第1の成長温度より低い第2の成長温度で、前記光導波コアメサをクラッド材料(160)で覆う、デバイスの製造方法であって、
前記第2の成長温度で前記光導波コアメサをクラッド材料で覆う前に、前記光導波コアメサ(140)上に、前記第1の温度と前記第2の温度との間の中間の温度で、前記クラッド材料(160)の副層(162)をマイクロ選択領域成長によって成長させ、前記中間の温度が、吸着原子が前記サイドウォールの幅(w)よりも大きな表面拡散長を有するような温度であることを含み、
前記クラッド材料(160)が平らな主表面を有する、方法。 - 前記第1の成長温度が、吸着原子が前記サイドウォールの幅よりも大きな表面拡散長を有するような温度であり、
前記第2の成長温度が、吸着原子が前記サイドウォールの幅よりも小さな表面拡散長を有するような温度である、請求項1に記載の方法。 - 前記光導波コアメサを成長させることが、
前記成長面上に、細長い成長窓(134)を画定する成長マスク(132)を形成すること、および
前記光導波コアメサを、前記成長窓内で成長させることを含む、請求項1または2のいずれか1項に記載の方法。 - 成長チャンバを準備し、
前記成長チャンバ内に前記ウェハを配置し、
前記光導波コアメサを成長させ、前記ウェハを前記成長チャンバから取り出すことなく被覆を実施する、請求項1から3のいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/787,349 US7184640B2 (en) | 2004-02-25 | 2004-02-25 | Buried heterostructure device fabricated by single step MOCVD |
US10/787,349 | 2004-02-25 | ||
PCT/US2005/005838 WO2005083480A1 (en) | 2004-02-25 | 2005-02-24 | Buried heterostructure device fabricated by single step mocvd |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007533120A JP2007533120A (ja) | 2007-11-15 |
JP5027647B2 true JP5027647B2 (ja) | 2012-09-19 |
Family
ID=34861906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007500962A Expired - Fee Related JP5027647B2 (ja) | 2004-02-25 | 2005-02-24 | 単一のステップmocvdによって製造される埋め込みヘテロ構造デバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US7184640B2 (ja) |
EP (1) | EP1719003B1 (ja) |
JP (1) | JP5027647B2 (ja) |
CN (1) | CN100476472C (ja) |
DE (1) | DE202005021940U1 (ja) |
TW (1) | TWI317764B (ja) |
WO (1) | WO2005083480A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008515201A (ja) * | 2004-09-23 | 2008-05-08 | セミネックス・コーポレーション | 高エネルギー赤外半導体ダイオード発光デバイス |
US7565200B2 (en) * | 2004-11-12 | 2009-07-21 | Advanced Neuromodulation Systems, Inc. | Systems and methods for selecting stimulation sites and applying treatment, including treatment of symptoms of Parkinson's disease, other movement disorders, and/or drug side effects |
JP2007103581A (ja) * | 2005-10-03 | 2007-04-19 | Fujitsu Ltd | 埋込型半導体レーザ |
JP2009182249A (ja) * | 2008-01-31 | 2009-08-13 | Mitsubishi Electric Corp | 半導体光素子の製造方法 |
KR101803326B1 (ko) * | 2012-03-14 | 2017-12-04 | 한국전자통신연구원 | 광 스위치 소자 및 그 제조방법 |
WO2014042637A1 (en) * | 2012-09-13 | 2014-03-20 | Hewlett-Packard Development Company, L.P. | Controlling temperatures in optical circuits |
US10193308B2 (en) * | 2017-06-19 | 2019-01-29 | Intel Corporation | Semiconductor laser with tensile strained InAlAs electron blocker for 1310 nanometer high temperature operation |
JP7480277B2 (ja) * | 2020-03-31 | 2024-05-09 | 京セラ株式会社 | 光導波路モジュール及び光源モジュール |
WO2022073093A1 (en) * | 2020-10-05 | 2022-04-14 | National Research Council Of Canada | Corrugated buried heterostructure laser and method for fabricating the same |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5185289A (en) * | 1988-06-28 | 1993-02-09 | International Business Machines Corporation | Process for the selective growth of GaAs |
JP2831667B2 (ja) * | 1988-12-14 | 1998-12-02 | 株式会社東芝 | 半導体レーザ装置及びその製造方法 |
JPH0834336B2 (ja) * | 1990-01-31 | 1996-03-29 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
JP3078004B2 (ja) * | 1990-08-31 | 2000-08-21 | 株式会社東芝 | 半導体レーザの製造方法 |
US5323027A (en) * | 1991-05-31 | 1994-06-21 | Shin-Etsu Handotai Kabushiki Kaisha | Light emitting device with double heterostructure |
JP2746065B2 (ja) * | 1993-07-29 | 1998-04-28 | 日本電気株式会社 | 光半導体素子の製造方法 |
JP2842292B2 (ja) * | 1994-09-16 | 1998-12-24 | 日本電気株式会社 | 半導体光集積装置および製造方法 |
DE19513848A1 (de) * | 1995-04-12 | 1996-10-17 | Basf Ag | Thermoplastische Formmassen auf der Basis von teilaromatischen Polyamiden und Polyetheramiden |
JP3728332B2 (ja) * | 1995-04-24 | 2005-12-21 | シャープ株式会社 | 化合物半導体発光素子 |
US5952673A (en) * | 1996-12-11 | 1999-09-14 | Fujitsu Limited | Optical semiconductor device including a multiple quantum well structure of an AlGaInAs/InP system |
JPH10242577A (ja) * | 1997-02-26 | 1998-09-11 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
JP3104789B2 (ja) * | 1997-05-02 | 2000-10-30 | 日本電気株式会社 | 半導体光素子およびその製造方法 |
JPH11238938A (ja) * | 1998-02-20 | 1999-08-31 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置およびその製造方法ならびに光通信システム |
JP3336994B2 (ja) * | 1998-04-23 | 2002-10-21 | 日本電気株式会社 | 半導体光導波路アレイの製造方法及びアレイ構造半導体光素子 |
US6445723B1 (en) * | 1998-05-18 | 2002-09-03 | Jds Uniphase Corporation | Laser source with submicron aperture |
JP3116350B2 (ja) * | 1998-06-16 | 2000-12-11 | 日本電気株式会社 | 半導体レーザの製造方法 |
JP2000260714A (ja) * | 1999-03-08 | 2000-09-22 | Nec Corp | 有機金属気相成長による成膜方法及びこれを用いた半導体レーザの製造方法 |
JP3267582B2 (ja) * | 1999-06-17 | 2002-03-18 | 日本電気株式会社 | 半導体レーザの製造方法 |
WO2003025263A1 (fr) * | 2001-09-13 | 2003-03-27 | Japan Science And Technology Agency | Substrat semi-conducteur de nitrure, son procede d'obtention et dispositif optique a semi-conducteur utilisant ledit substrat |
-
2004
- 2004-02-25 US US10/787,349 patent/US7184640B2/en not_active Expired - Fee Related
- 2004-09-08 TW TW093127147A patent/TWI317764B/zh not_active IP Right Cessation
-
2005
- 2005-02-24 DE DE202005021940U patent/DE202005021940U1/de not_active Expired - Lifetime
- 2005-02-24 JP JP2007500962A patent/JP5027647B2/ja not_active Expired - Fee Related
- 2005-02-24 WO PCT/US2005/005838 patent/WO2005083480A1/en active Application Filing
- 2005-02-24 CN CNB2005800061023A patent/CN100476472C/zh not_active Expired - Fee Related
- 2005-02-24 EP EP05723631A patent/EP1719003B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW200528576A (en) | 2005-09-01 |
CN100476472C (zh) | 2009-04-08 |
EP1719003A4 (en) | 2008-01-09 |
US20050185909A1 (en) | 2005-08-25 |
TWI317764B (en) | 2009-12-01 |
US7184640B2 (en) | 2007-02-27 |
EP1719003B1 (en) | 2011-08-24 |
CN1922518A (zh) | 2007-02-28 |
EP1719003A1 (en) | 2006-11-08 |
WO2005083480A1 (en) | 2005-09-09 |
JP2007533120A (ja) | 2007-11-15 |
DE202005021940U1 (de) | 2011-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5280614B2 (ja) | 単一のステップmocvdによって製造される導波格子を組み込んだ埋め込みヘテロ構造デバイス | |
JP5027647B2 (ja) | 単一のステップmocvdによって製造される埋め込みヘテロ構造デバイス | |
JPH07221392A (ja) | 量子細線の作製方法、量子細線、量子細線レーザ、及び量子細線レーザの作製方法、回折格子の作製方法、及び分布帰還型半導体レーザ | |
US5260230A (en) | Method of manufacturing buried heterostructure semiconductor laser | |
JPH0864906A (ja) | 半導体装置の製法 | |
US7474683B2 (en) | Distributed feedback semiconductor laser | |
US8891159B2 (en) | Optical semiconductor element, semiconductor laser, and method of manufacturing optical semiconductor element | |
JP2005286192A (ja) | 光集積素子 | |
CN110247301B (zh) | 一种宽温度范围的dfb激光器及其制备方法 | |
US20050186798A1 (en) | Process for manufacturing semiconductor devices and related semiconductor device | |
JP4457578B2 (ja) | 半導体光素子を製造する方法、及び半導体光素子 | |
JP3047049B2 (ja) | 埋込み構造半導体レーザの製造方法 | |
JP2865160B2 (ja) | 半導体レーザの製造方法 | |
KR20000053604A (ko) | 반도체광학장치 제조방법 | |
JP3022351B2 (ja) | 光半導体装置及びその製造方法 | |
JP3266114B2 (ja) | 半導体レーザの製造方法 | |
JPH1140897A (ja) | 半導体レーザ素子及びその製造方法 | |
JPH07176830A (ja) | 半導体発光素子の製造方法 | |
JP3602814B2 (ja) | 半導体装置の製造方法 | |
JPH09186391A (ja) | 化合物半導体装置及びその製造方法 | |
JPH09148670A (ja) | 半導体レーザ及びその製造方法 | |
JPH0521891A (ja) | 埋込み構造半導体レーザの製造方法 | |
JPH0786679A (ja) | 半導体発光装置及びその製造方法 | |
JPH10190144A (ja) | 埋め込みリッジ型半導体レーザ及びその製造方法 | |
JPH1012972A (ja) | 光半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080225 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110210 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110222 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110519 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120117 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120517 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120524 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120619 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120622 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150629 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |