JP4989669B2 - 有機発光ディスプレイ装置 - Google Patents
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- 238000002347 injection Methods 0.000 claims description 57
- 239000007924 injection Substances 0.000 claims description 57
- 230000005525 hole transport Effects 0.000 claims description 50
- 230000008021 deposition Effects 0.000 claims description 4
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- 238000000151 deposition Methods 0.000 description 12
- 238000007740 vapor deposition Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 229910052791 calcium Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
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- 238000000059 patterning Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- MBPCKEZNJVJYTC-UHFFFAOYSA-N 4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=C1 MBPCKEZNJVJYTC-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
本発明において、前記第1電極が前記基板側に備えられており、前記第1電極が反射型電極であり、前記第2電極が半透明電極または透明電極であり、前記発光層で生成された光が前記第2電極を通じて外部に取り出されうる。
(第1実施例)
(第2実施例)
(第3実施例)
(第4実施例)
111、211、311 発光層
131、231、331 第1電極
134、234、334 第2電極
141、241、341 正孔注入層
142、242、342 正孔輸送層
143、243、343 電子輸送層
Claims (8)
- 複数個の画素を備えた有機発光ディスプレイ装置において、
前記各画素は、各々赤色、緑色及び青色光を放出する副画素を一方向に沿って備え、
前記有機発光ディスプレイ装置の前記一方向の画素に備えられた、前記赤色、緑色及び青色光を放出する副画素は、各々異なる厚さを有する中間層を備えるように形成され、
前記緑色光を放出する副画素に備えられた中間層の厚さと前記青色光を放出する副画素に備えられた中間層の厚さとの和は、前記赤色光を放出する副画素に備えられた中間層の厚さと実質的に同一に形成され、
各副画素の前記中間層の蒸着を容易にしつつも、パターンの精度を向上させるように、
前記各画素の間には赤色光を放出する副画素が配され、前記赤色光を放出する副画素の両側に緑色及び青色光を放出する副画素が各々配され、
前記赤色光を放出する副画素に備えられた中間層は、前記緑色及び/または前記青色光を放出する副画素に備えられた中間層より厚く形成され、
前記中間層は、
前記一画素内で一定の厚さに形成される正孔注入層(HIL:Hole Injection Layer)と、
前記正孔注入層上に形成され、前記赤色、緑色及び青色光を放出する副画素ごとに互いに異なる厚さに形成される正孔輸送層(HTL:Hole Transport Layer)と、を含む
ことを特徴とする有機発光ディスプレイ装置。 - 複数個の画素を備えた有機発光ディスプレイ装置において、
前記各画素は、各々赤色、緑色及び青色光を放出する副画素を一方向に沿って備え、
前記有機発光ディスプレイ装置の前記一方向の画素に備えられた、前記赤色、緑色及び青色光を放出する副画素は、各々異なる厚さを有する中間層を備えるように形成され、
前記緑色光を放出する副画素に備えられた中間層の厚さと前記青色光を放出する副画素に備えられた中間層の厚さとの和は、前記赤色光を放出する副画素に備えられた中間層の厚さと実質的に同一に形成され、
各副画素の前記中間層の蒸着を容易にしつつも、パターンの精度を向上させるように、
前記各画素の間には赤色光を放出する副画素が配され、前記赤色光を放出する副画素の両側に緑色及び青色光を放出する副画素が各々配され、
前記赤色光を放出する副画素に備えられた中間層は、前記緑色及び/または前記青色光を放出する副画素に備えられた中間層より厚く形成され、
前記中間層は、
前記赤色、緑色及び青色光を放出する副画素ごとに互いに異なる厚さに形成される正孔注入層と、
前記正孔注入層上に形成されて前記一画素内で一定の厚さに形成される正孔輸送層とを含む
ことを特徴とする有機発光ディスプレイ装置。 - 複数個の画素を備えた有機発光ディスプレイ装置において、
前記各画素は、各々赤色、緑色及び青色光を放出する副画素を一方向に沿って備え、
前記有機発光ディスプレイ装置の前記一方向の画素に備えられた、前記赤色、緑色及び青色光を放出する副画素は、各々異なる厚さを有する中間層を備えるように形成され、
前記緑色光を放出する副画素に備えられた中間層の厚さと前記青色光を放出する副画素に備えられた中間層の厚さとの和は、前記赤色光を放出する副画素に備えられた中間層の厚さと実質的に同一に形成され、
各副画素の前記中間層の蒸着を容易にしつつも、パターンの精度を向上させるように、
前記各画素の間には赤色光を放出する副画素が配され、前記赤色光を放出する副画素の両側に緑色及び青色光を放出する副画素が各々配され、
前記赤色光を放出する副画素に備えられた中間層は、前記緑色及び/または前記青色光を放出する副画素に備えられた中間層より厚く形成され、
前記中間層は、
前記赤色、緑色及び青色光を放出する副画素ごとに互いに異なる厚さに形成される正孔注入層と、
前記正孔注入層上に形成され、前記赤色、緑色及び青色光を放出する副画素ごとに互いに異なる厚さに形成される正孔輸送層と、を含む
ことを特徴とする有機発光ディスプレイ装置。 - 前記一画素内に備えられた中間層は一体に形成される
ことを特徴とする請求項1乃至請求項3のいずれか一項に記載の有機発光ディスプレイ装置。 - 前記各副画素は、
互いに対向した第1電極と第2電極と、
前記第1電極と第2電極間の前記中間層の上部または下部に形成された赤色、緑色及び青色発光層をさらに含み、
前記赤色発光層が形成された領域の前記中間層は、前記緑色発光層及び/または前記青色発光層が形成された領域の前記中間層より厚く形成される
ことを特徴とする請求項1乃至請求項3のいずれか一項に記載の有機発光ディスプレイ装置。 - 前記有機発光ディスプレイ装置の前記一方向の画素に備えられた副画素は、各副画素が放出する光の色の配列が前記一方向に接する画素の各副画素が放出する光の色の配列と画素間を基準に互いに対称になるように備えられた
ことを特徴とする請求項1乃至請求項3のいずれか一項に記載の有機発光ディスプレイ装置。 - 前記一方向に互いに隣接した画素において、前記隣接した画素間を基準に互いに接している2つの副画素の中間層は一体に備えられる
ことを特徴とする請求項6に記載の有機発光ディスプレイ装置。 - 前記中間層は、
前記赤色、緑色及び青色光を放出する副画素ごとに互いに異なる厚さに形成される電子輸送層を含む
ことを特徴とする請求項1乃至請求項3のいずれか一項に記載の有機発光ディスプレイ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020080023413A KR100922763B1 (ko) | 2008-03-13 | 2008-03-13 | 유기 발광 디스플레이 장치 및 그 제조 방법 |
KR10-2008-0023413 | 2008-03-13 |
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JP2009224781A JP2009224781A (ja) | 2009-10-01 |
JP4989669B2 true JP4989669B2 (ja) | 2012-08-01 |
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US (1) | US8344619B2 (ja) |
EP (1) | EP2101356B1 (ja) |
JP (1) | JP4989669B2 (ja) |
KR (1) | KR100922763B1 (ja) |
CN (1) | CN101533852B (ja) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI323047B (en) * | 2006-11-28 | 2010-04-01 | Univ Nat Taiwan | The method for forming electronic devices by using protection layers |
JP5620146B2 (ja) | 2009-05-22 | 2014-11-05 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置 |
TWI475124B (zh) | 2009-05-22 | 2015-03-01 | Samsung Display Co Ltd | 薄膜沉積設備 |
KR101127859B1 (ko) * | 2009-05-27 | 2012-03-22 | 엘지디스플레이 주식회사 | 단색 발광 표시장치 및 이의 제조방법 |
US8183561B2 (en) * | 2009-06-24 | 2012-05-22 | Au Optronics Corporation | OLED panel with broadened color spectral components |
JP5328726B2 (ja) | 2009-08-25 | 2013-10-30 | 三星ディスプレイ株式會社 | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 |
JP5677785B2 (ja) | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
KR101094287B1 (ko) * | 2009-10-09 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
US8876975B2 (en) | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
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