JP4971340B2 - 炭化珪素半導体素子の製造方法 - Google Patents
炭化珪素半導体素子の製造方法 Download PDFInfo
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- JP4971340B2 JP4971340B2 JP2008535205A JP2008535205A JP4971340B2 JP 4971340 B2 JP4971340 B2 JP 4971340B2 JP 2008535205 A JP2008535205 A JP 2008535205A JP 2008535205 A JP2008535205 A JP 2008535205A JP 4971340 B2 JP4971340 B2 JP 4971340B2
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 228
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 217
- 239000004065 semiconductor Substances 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims description 137
- 238000000137 annealing Methods 0.000 claims description 65
- 230000004913 activation Effects 0.000 claims description 52
- 239000012535 impurity Substances 0.000 claims description 46
- 238000002513 implantation Methods 0.000 claims description 25
- 150000002500 ions Chemical class 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 229910052799 carbon Inorganic materials 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 5
- 230000001133 acceleration Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000013078 crystal Substances 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- -1 aluminum ions Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
Description
ある好ましい実施形態において、前記結晶性カーボン膜はダイヤモンドライクカーボン膜である。
2 炭化珪素層
2a 上面
2b 側面
3 不純物イオン
4 不純物イオン注入領域
6 キャップ層
7 不純物ドープ領域
10 注入エピ基板
11a 第1の主面
11b、12b ベベル面
12a 第2の主面
13 側面
40 SiC基板
41 炭化珪素層
42 注入マスク
43 不純物イオン注入領域
44 不純物イオン
45 キャップ層
46 p型ウェル領域
47 n型ドリフト領域
300 半導体素子
301 炭化珪素基板
302 ドリフト層
305 ウェル領域
307 蓄積チャネル層
308 ソース領域
309 コンタクト領域
311 ゲート絶縁膜
312 ソース電極
313 ゲート電極
314 ドレイン電極
315 炭素過剰層
Claims (11)
- 第1および第2の主面を有する炭化珪素基板の前記第1の主面上に形成された炭化珪素層の少なくとも一部に不純物イオンを注入し、不純物ドープ領域を形成することにより、不純物イオンの注入により形成された前記不純物ドープ領域を、前記第1の主面上に形成された前記炭化珪素層内のみに有する炭化珪素基板を得る工程(A)と、
前記工程(A)により得られた前記炭化珪素基板における前記炭化珪素層の少なくとも上面、および、前記炭化珪素基板の少なくとも第2の主面にキャップ層を形成する工程(B)と、
前記炭化珪素層を所定の温度で加熱し、活性化アニール処理を行う工程(C)と、
を包含する炭化珪素半導体素子の製造方法。 - 前記炭化珪素基板は、少なくとも50mm以上の直径を有する炭化珪素ウエハである請求項1に記載の炭化珪素半導体素子の製造方法。
- 前記キャップ層は少なくとも炭素を含む請求項1または2に記載の炭化珪素半導体素子の製造方法。
- 前記キャップ層は、結晶性カーボン膜、アモルファスカーボン膜または有機膜からなる請求項3に記載の炭化珪素半導体素子の製造方法。
- 前記結晶性カーボン膜はダイヤモンドライクカーボン膜である請求項4に記載の炭化珪素半導体素子の製造方法。
- 前記工程(B)において、前記キャップ層を前記炭化珪素層が形成された炭化珪素基板の全体に形成する請求項1から5のいずれかに記載の炭化珪素半導体素子の製造方法。
- 前記所定の温度は、1700℃より高く、前記キャップ層が残留する限界温度以下である請求項1から6のいずれかに記載の炭化珪素半導体素子の製造方法。
- 前記工程(C)において、前記所定の温度に到達するまでの最大昇温レートは、200℃/分以上1000℃/分以下である請求項1から7のいずれかに記載の炭化珪素半導体素子の製造方法。
- 前記工程(A)において、前記不純物イオンを異なる加速エネルギーで複数回注入する請求項1から8のいずれかに記載の炭化珪素半導体素子の製造方法。
- 前記工程(A)は、前記炭化珪素層の上面の所定の領域を覆う注入マスクを形成する工程を含む請求項1から8のいずれかに記載の炭化珪素半導体素子の製造方法。
- 前記工程(A)は、異なる注入マスクを用いて互いに異なる不純物イオンを注入する工程を含む請求項10に記載の炭化珪素半導体素子の製造方法。
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JP2007087346 | 2007-03-29 | ||
PCT/JP2008/000769 WO2008120469A1 (ja) | 2007-03-29 | 2008-03-27 | 炭化珪素半導体素子の製造方法 |
JP2008535205A JP4971340B2 (ja) | 2007-03-29 | 2008-03-27 | 炭化珪素半導体素子の製造方法 |
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JPWO2008120469A1 JPWO2008120469A1 (ja) | 2010-07-15 |
JP4971340B2 true JP4971340B2 (ja) | 2012-07-11 |
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US (1) | US7718519B2 (ja) |
JP (1) | JP4971340B2 (ja) |
CN (1) | CN101542688B (ja) |
WO (1) | WO2008120469A1 (ja) |
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JP5092868B2 (ja) * | 2008-04-18 | 2012-12-05 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
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US8436366B2 (en) * | 2009-04-15 | 2013-05-07 | Sumitomo Electric Industries, Ltd. | Substrate composed of silicon carbide with thin film, semiconductor device, and method of manufacturing a semiconductor device |
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JP3760688B2 (ja) | 1999-08-26 | 2006-03-29 | 富士電機ホールディングス株式会社 | 炭化けい素半導体素子の製造方法 |
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JP2003092267A (ja) * | 2001-09-17 | 2003-03-28 | Denso Corp | 炭化珪素半導体製造装置及びそれを用いた炭化珪素半導体製造方法 |
JP2005260267A (ja) * | 2005-04-27 | 2005-09-22 | Fuji Electric Holdings Co Ltd | 炭化けい素半導体素子の製造方法 |
JP2007013087A (ja) * | 2005-05-31 | 2007-01-18 | Toshiba Corp | 電界効果トランジスタおよびサイリスタ |
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CN101542688A (zh) | 2009-09-23 |
WO2008120469A1 (ja) | 2008-10-09 |
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